US20080186593A1 - Metal trace fabrication for optical element - Google Patents

Metal trace fabrication for optical element Download PDF

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Publication number
US20080186593A1
US20080186593A1 US11/782,609 US78260907A US2008186593A1 US 20080186593 A1 US20080186593 A1 US 20080186593A1 US 78260907 A US78260907 A US 78260907A US 2008186593 A1 US2008186593 A1 US 2008186593A1
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US
United States
Prior art keywords
conductive material
optical element
depositing
recess
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/782,609
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English (en)
Inventor
Hing Wah Chan
Harold Ackler
Scott E. Solberg
John S. Fitch
David K. Fork
David G. Duff
Michael C. Weisberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palo Alto Research Center Inc
Solfocus Inc
Sol Focus Inc
Original Assignee
Palo Alto Research Center Inc
Sol Focus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to US11/782,609 priority Critical patent/US20080186593A1/en
Application filed by Palo Alto Research Center Inc, Sol Focus Inc filed Critical Palo Alto Research Center Inc
Assigned to SOLFOCUS, INC. reassignment SOLFOCUS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ACKLER, HAROLD, CHAN, HING WAH
Assigned to PALO ALTO RESEARCH CENTER INCORPORATED reassignment PALO ALTO RESEARCH CENTER INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DUFF, DAVID G., FITCH, JOHN S., WEISBERG, MICHAEL C., FORK, DAVID K., SOLBERG, SCOTT E.
Priority to EP08727545.9A priority patent/EP2115781B1/en
Priority to AU2008214228A priority patent/AU2008214228B2/en
Priority to PCT/US2008/050790 priority patent/WO2008097687A2/en
Priority to JP2009548351A priority patent/JP5869204B2/ja
Publication of US20080186593A1 publication Critical patent/US20080186593A1/en
Assigned to NEW ENTERPRISE ASSOCIATES 12 LIMITED PARTNERSHIP, AS COLLATERAL AGENT reassignment NEW ENTERPRISE ASSOCIATES 12 LIMITED PARTNERSHIP, AS COLLATERAL AGENT SECURITY AGREEMENT Assignors: SOLFOCUS, INC.
Priority to US12/909,488 priority patent/US8389851B2/en
Assigned to SOLFOCUS, INC. reassignment SOLFOCUS, INC. RELEASE OF SECURITY INTEREST AT REEL/FRAME 023973/0826 Assignors: NEW ENTERPRISE ASSOCIATES 12 LIMITED PARTNERSHIP
Priority to US13/586,794 priority patent/US8624102B2/en
Assigned to CPV SOLAR LLC C/O HARPER CONSTRUCTION COMPANY, INC. reassignment CPV SOLAR LLC C/O HARPER CONSTRUCTION COMPANY, INC. SECURITY AGREEMENT Assignors: SOLFOCUS, INC.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Definitions

  • Some embodiments generally relate to electrical systems incorporating one or more optical elements. More specifically, embodiments may relate to an optical element efficiently adapted for interconnection to electrical devices.
  • an optical element e.g., a lens
  • the metal traces may be fabricated on and/or within the optical element using any of several known techniques.
  • the metal traces may be deposited using thin or thick film lithography. Lithography, however, requires expensive equipment and time-consuming processes.
  • lithographic techniques also require fiducial marks for proper alignment of the metal traces on the optical element.
  • the placement of the fiducial marks on the optical element is also difficult due to the lack of surface features and the material of which the optical element is composed (e.g., glass).
  • some aspects provide a method, means and/or process steps to create an optical element including a surface defining a recess, deposit conductive material on the surface such that a portion of the deposited conductive material is disposed within the recess, and substantially planarize the surface to expose the portion of the conductive material disposed within the recess.
  • Creation of the optical element may include molding the optical element with a mold defining the optical element and the recess. Also or alternatively, deposition of the conductive material may include placing a stencil on the optical element prior to metal spraying the conductive material onto the optical element.
  • a reflective material is deposited on the optical element and not on the surface, an electrical isolator is deposited on the reflective material but not on the surface, and the conductive material is deposited on the electrical isolator.
  • aspects may include deposition of a solder mask over the exposed portion of the conductive material, wherein the solder mask defines an aperture through which light from the optical element may pass.
  • a terminal of a solar cell may be coupled to the exposed portion of the conductive material such that a portion of the solar cell is disposed over the aperture.
  • an optical element including a surface defining a recess, conductive material disposed within the recess, and a solder mask disposed over a portion of the conductive material.
  • the solder mask may define an aperture through which light from the optical element may pass.
  • the optical element may comprise a transparent portion including the surface, and light may pass from the transparent portion through the aperture.
  • a reflective material may be disposed on the optical element and not on the surface
  • an electrical isolator may be disposed on the reflective material and not on the surface
  • second conductive material may be disposed on the electrical isolator.
  • FIG. 1 is a flow diagram of a method according to some embodiments.
  • FIG. 2 is a perspective view of a portion of an optical element according to some embodiments.
  • FIG. 3 is a cross-sectional view of a portion of an optical element according to some embodiments.
  • FIG. 4 is a perspective view of a portion of an optical element with conductive material disposed thereon according to some embodiments.
  • FIG. 5 is a cross-sectional view of a portion of an optical element with conductive material disposed thereon according to some embodiments.
  • FIG. 6 is a perspective view of a substantially planarized portion of an optical element according to some embodiments.
  • FIG. 7 is a cross-sectional view of a substantially planarized portion of an optical element according to some embodiments.
  • FIG. 8 is a flow diagram of a method according to some embodiments.
  • FIG. 9A is a perspective view of a transparent optical element according to some embodiments.
  • FIG. 9B is a cross-sectional view of a transparent optical element according to some embodiments.
  • FIG. 10A is a perspective view of a transparent optical element with reflective material disposed thereon according to some embodiments.
  • FIG. 10B is a cross-sectional view of a transparent optical element with reflective material disposed thereon according to some embodiments.
  • FIG. 11A is a perspective view of an optical element with an electrical isolator disposed thereon according to some embodiments.
  • FIG. 11B is a cross-sectional view of an optical element with an electrical isolator disposed thereon according to some embodiments.
  • FIG. 12A is a perspective view of an optical element with conductive material disposed thereon according to some embodiments.
  • FIG. 12B is a cross-sectional view of an optical element with conductive material disposed thereon according to some embodiments.
  • FIG. 13A is a perspective view of an optical element after planarization of a portion thereof according to some embodiments.
  • FIG. 13B is a cross-sectional view of an optical element after planarization of a portion thereof according to some embodiments.
  • FIG. 14A is a perspective view of a solder mask deposited on an optical element according to some embodiments.
  • FIG. 14B is a cross-sectional view of a solder mask deposited on an optical element according to some embodiments.
  • FIG. 15 is a close-up cross-sectional view of an optical element including a solar cell according to some embodiments.
  • FIG. 1 is a flow diagram of process 10 according to some embodiments. Process 10 may be performed by any combination of machine, hardware, software and manual means.
  • an optical element is created at S 12 .
  • the optical element includes a surface defining a recess, and may be composed of any suitable material or combination of materials. According to some embodiments, the optical element may be configured to manipulate and/or pass desired wavelengths of light.
  • the optical element may comprise any number of disparate materials and/or elements (e.g., lenses, mirrors, etc.) according to some embodiments.
  • the optical element may be created using any combination of devices and systems that is or becomes known. Some embodiments of S 12 include depositing a liquid or powder into a mold and cooling, heating and/or pressuring the mold.
  • the mold may define the optical element as well as the aforementioned recesses. Alternatively, the recesses may be formed (e.g., by etching, milling, etc.) after the optical element is molded.
  • FIG. 2 is a perspective view of a portion of optical element 100 according to some embodiments
  • FIG. 3 is a cross-sectional view of optical element 100 .
  • FIGS. 2 and 3 show only a portion of optical element 100 in order to illustrate that optical element 100 may exhibit any suitable shape or size.
  • Element 100 may be fabricated according to S 12 of FIG. 1 , but S 12 is not limited thereto.
  • optical element 100 comprises surface 110 , recess 120 and recess 130 .
  • surface 110 includes portions of element 100 which define recess 120 and recess 130 .
  • recess 120 and recess 130 may have been defined by a mold used to create optical element 100 or formed after creation of optical element 100 .
  • conductive material is deposited on the surface of the optical element at S 14 .
  • the material is deposited such that a portion of the deposited material is disposed within the defined recess.
  • the conductive material may be composed of any combination of one or more materials.
  • the conductive material comprises nickel.
  • the conductive material may be deposited using any suitable process that is or becomes known, including but not limited to sputtering, chemical vapor deposition, sol gel techniques and thermal spraying (e.g., twin wire arcing, plasma spraying).
  • FIG. 4 is a perspective view of optical element 100 after S 14 according to some embodiments.
  • FIG. 5 is a cross-sectional view of optical element 100 as shown in FIG. 4 .
  • Conductive material 140 is depicted covering surface 110 of element 100 .
  • Conductive material 140 is disposed within the recesses defined by surface 110 .
  • a thickness of material 140 within recesses 120 and 130 is greater than a thickness of material 140 on other portions of surface 110 , but embodiments are not limited thereto.
  • a thickness of material 140 on the other portions of surface 110 need not be as uniform as shown in FIG. 5 .
  • a height of conductive material 140 on various portions of surface 110 may depend on the technique used to deposit material 140 at S 14 .
  • the surface of the optical element is substantially planarized at S 16 .
  • the planarization exposes the portion of the conductive material disposed within the recess.
  • Chemical-mechanical polishing may be employed at S 16 to substantially planarize the surface, but embodiments are not limited thereto.
  • Planarization may comprise removing an uppermost portion of the surface of the optical element as well as an upper layer of the conductive material.
  • FIGS. 6 and 7 depict element 100 after some embodiments of S 16 .
  • conductive material 140 is disposed within recess 120 and recess 130 and is substantially flush with adjacent portions of surface 110 .
  • conductive material 140 may be electrically coupled to an electrical device and/or to other conductive traces.
  • FIG. 8 is a flow diagram of process 200 according to some embodiments. Process 200 may be performed by any combination of machine, hardware, software and manual means.
  • Process 200 begins at S 210 , at which an optical element is created.
  • the optical element includes a surface defining a recess, and may be composed of any suitable material or combination of materials.
  • the optical element may be created using any combination of devices and systems that is or becomes known.
  • FIG. 9A is a perspective view of optical element 300 created at S 210 according to some embodiments
  • FIG. 9B is a cross-sectional view of element 300
  • Optical element 300 may be molded from low-iron glass at S 210 using known methods. Alternatively, separate pieces may be glued or otherwise coupled together to form element 300 .
  • Optical element 300 may comprise an element of a solar concentrator according to some embodiments.
  • Element 300 includes convex surface 310 , pedestal 320 defining recesses 322 , 324 , 326 and 328 , and concave surface 330 .
  • Recesses 322 , 324 , 326 and 328 may have been defined by a mold used to create optical element 300 or formed after creation of optical element 300 . The purposes of each portion of element 300 during operation according to some embodiments will become evident from the description below.
  • a reflective material is deposited on the optical element at S 220 .
  • the reflective material may be intended to create one or more mirrored surfaces. Any suitable reflective material may be used, taking into account factors such as but not limited to the wavelengths of light to be reflected, bonding of the reflective material to the optical element, and cost.
  • the reflective material may be deposited by sputtering or liquid deposition.
  • FIGS. 10A and 10B show perspective and cross-sectional views, respectively, of optical element 300 after some embodiments of S 220 .
  • Reflective material 340 is deposited on convex surface 310 and concave surface 330 .
  • Reflective material 340 may comprise sputtered silver or aluminum.
  • the vertical and horizontal surfaces of pedestal 320 may be masked at S 220 such that reflective material 340 is not deposited thereon, or otherwise treated to remove any reflective material 340 that is deposited thereon.
  • an electrical insulator is deposited on the optical element.
  • the insulator may comprise any suitable insulator or insulators. Non-exhaustive examples include polymers, dielectrics, polyester, epoxy and polyurethane.
  • the insulator may be deposited using any process that is or becomes known. In some embodiments, the insulator is powder-coated onto the optical element.
  • S 230 Some embodiments of S 230 are depicted in FIGS. 11A and 11B .
  • Insulator 350 is deposited on convex surface 310 or, more particularly, on reflective material 340 .
  • S 230 is executed such that insulator 350 is not deposited on the vertical and horizontal surfaces of pedestal 320 .
  • insulator 340 is not deposited on concave surface 330 (i.e., on reflective material 340 deposited on concave surface 330 ).
  • a pattern of conductive material is deposited on the surface and the electrical isolator at S 240 such that a portion of the deposited conductive material is disposed within the defined recess.
  • the conductive material may be composed of any combination of one or more materials (e.g., nickel, copper). Sputtering, chemical vapor deposition, thermal spraying, lithography, and or other techniques may be used at S 240 to deposit the conductive material on the surface and on the electrical isolator.
  • FIG. 12A is a perspective view and FIG. 12B is a cross-sectional view of optical element 300 after S 240 according to some embodiments.
  • Conductive material 360 covers pedestal 320 and portions of insulator 350 .
  • FIG. 12B shows conductive material 360 disposed within recesses 322 and 326 .
  • Conductive material 360 disposed in recesses 322 and 326 is contiguous with, and therefore electrically connected to, conductive material 360 disposed on insulator 350 .
  • conductive material 360 appears to extend to a uniform height above element 300 , this height need not be uniform.
  • Conductive material 370 which may be different from or identical to material 360 , also covers portions of insulator 350 . Conductive material 360 and conductive material 370 define a gap to facilitate electrical isolation from one another. Embodiments such as that depicted in FIGS. 12A and 12B may include placing a stencil in the shape of the illustrated gap on electrical isolator 350 and depositing conductive material 360 and 370 where shown and on the stencil. Removal of the stencil may then result in the apparatus of FIGS. 12A and 12B .
  • Conductive materials 360 and 370 may create a conductive path for electrical current generated by a photovoltaic (solar) cell coupled to element 300 .
  • Conductive material 360 and conductive material 370 may also, as described in U.S. Patent Application Publication No. 2006/0231133, electrically link solar cells of adjacent solar concentrators in a solar concentrator array.
  • planarization may comprise chemical-mechanical polishing or any other suitable system. As described above, planarization may also comprise removing an uppermost portion of the surface of the optical element as well as an upper layer of the conductive material.
  • FIGS. 13A and 13B show optical element 300 after some embodiments of S 250 .
  • Conductive material 360 remains disposed within recesses 322 through 328 and electrically coupled to conductive material 360 deposited on electrical isolator 350 .
  • Conductive material 360 disposed within recesses 322 through 328 is also substantially flush with adjacent portions of pedestal 320 .
  • S 240 and S 250 may comprise placing a material (e.g., wax, polymer) on areas of surface 320 other than recesses 322 , 324 , 326 and 328 .
  • the material may comprise a material which resists adhesion to the conductive material.
  • the material may be dip-coated, contact-printed, stamped, rolled, painted, etc. onto surface 320 .
  • Conductive material 360 may be thereafter deposited onto the material and recesses 322 , 324 , 326 and 328 . The material is then removed using a chemical stripping method, for example, thereby removing any conductive material that has adhered to the material.
  • a solder mask defining an aperture is deposited over the exposed portion of the conductive material at S 260 .
  • the solder mask may protect the surface surrounding the conductive material during subsequent soldering of electrical contacts to the exposed conductive portions.
  • the solder mask may be deposited using a stencil and a ceramic spray and/or may be deposited using photolithographic techniques.
  • FIGS. 14A and 14B show a perspective view and a cross-sectional view, respectively, of optical element 300 including solder mask 380 .
  • Solder mask 380 defines aperture 385 through which portions of conductive material 360 are visible. Solder mask 380 may therefore allow soldering of electrical elements to the visible portions while protecting other portions of conductive material 360 .
  • a terminal of a solar cell is coupled to the exposed portion of the conductive material at S 270 .
  • the terminal may be coupled such that a portion of the solar cell is disposed over the aperture.
  • the portion of the solar cell may comprise an area for receiving photons from which the solar cell generates electrical current.
  • FIG. 15 is a close-up cross-sectional view of element 300 after S 270 according to some embodiments.
  • Solar cell 390 may comprise a solar cell (e.g., a III-V cell, II-VI cell, etc.) for receiving photons from optical element 300 and generating electrical charge carriers in response thereto.
  • Solar cell 390 may comprise any number of active, dielectric and metallization layers, and may be fabricated using any suitable methods that are or become known.
  • Solder bumps 392 and 394 are coupled to conductive material 360 disposed in recesses 322 and 326 , respectively. Solder bumps 392 and 394 are also respectively coupled to terminals 393 and 395 of solar cell 390 .
  • Various flip-chip bonding techniques may be employed in some embodiments to electrically and physically couple terminals 393 and 395 to the conductive material disposed in recesses 322 and 326 .
  • unshown terminals of solar cell 390 are coupled to conductive material 360 disposed in recesses 324 and 328 of element 300 .
  • a protection layer is applied to the exposed portions of conductive material 360 disposed in recesses 322 through 328 prior to S 270 .
  • the protection layer may comprise a lower layer of nickel and an upper layer of gold. A portion of the gold layer may dissipate during coupling of the terminal at S 270 .
  • Some embodiments may avoid deposition of solder mask 380 at S 260 by replacing solder bumps 392 and 394 by other interconnects that do not require melting to couple terminals 393 and 395 to conductive material 360 disposed in recesses 322 and 326 .
  • Examples of such materials include gold stud bumps and conductive die attaches including silver-filled epoxy.
  • the coupling may be established by known methods such as ultrasonic welding and other direct chip attachment methods.
  • a thin layer of conductive material is deposited on entire surfaces 310 and 320 of optical element 300 .
  • Photoresist is then applied to entire surfaces 310 and 320 .
  • the photoresist is patterned and developed such that the photoresist covers all portions of the conductive material except for exposed portions where metal traces are desired.
  • Metal plating is applied which adheres to the exposed portions but not to the photoresist.
  • the photoresist is then removed, and the thin layer of conductive material is removed.
  • the thin layer may be removed by selectively etching in a case that the thin material differs from the metal plating material. In some embodiments, etch time may be controlled to remove the thin layer while leaving a suitable thickness of the metal traces.
  • Apparatus 300 may generally operate in accordance with the description of aforementioned U.S. Patent Application Publication No. 2006/0231133.
  • solar rays enter surface 398 and are reflected by reflective material 340 disposed on convex surface 310 .
  • the rays are reflected toward reflective material 340 on concave surface 330 , and are thereafter reflected toward aperture 385 .
  • the reflected rays pass through aperture 385 and are received by window 396 of solar cell 390 .
  • Those skilled in the art of optics will recognize that combinations of one or more other surface shapes may be utilized to concentrate solar rays onto a solar cell.
  • Solar cell 390 receives a substantial portion of the photon energy received at surface 398 and generates electrical current in response to the received photon energy.
  • the electrical current may be passed to external circuitry (and/or to similar serially-connected apparatuses) through conductive material 360 and conductive material 370 .
  • solar cell 390 may also comprise a terminal electrically coupled to conductive material 370 . Such a terminal would exhibit a polarity opposite to the polarity of terminals 393 and 395 .

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  • Photovoltaic Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Coating By Spraying Or Casting (AREA)
US11/782,609 2007-02-02 2007-07-24 Metal trace fabrication for optical element Abandoned US20080186593A1 (en)

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US11/782,609 US20080186593A1 (en) 2007-02-02 2007-07-24 Metal trace fabrication for optical element
EP08727545.9A EP2115781B1 (en) 2007-02-02 2008-01-10 Metal trace fabrication for optical element
AU2008214228A AU2008214228B2 (en) 2007-02-02 2008-01-10 Metal trace fabrication for optical element
PCT/US2008/050790 WO2008097687A2 (en) 2007-02-02 2008-01-10 Metal trace fabrication for optical element
JP2009548351A JP5869204B2 (ja) 2007-02-02 2008-01-10 光学素子用の金属トレース形成
US12/909,488 US8389851B2 (en) 2007-02-02 2010-10-21 Metal trace fabrication for optical element
US13/586,794 US8624102B2 (en) 2007-02-02 2012-08-15 Metal trace fabrication for optical element

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US11/782,359 Abandoned US20090025789A1 (en) 2007-02-02 2007-07-24 Alignment of optical element and solar cell
US11/782,605 Abandoned US20090025784A1 (en) 2007-02-02 2007-07-24 Thermal spray for solar concentrator fabrication
US11/782,376 Abandoned US20080185039A1 (en) 2007-02-02 2007-07-24 Conductor fabrication for optical element
US12/841,823 Abandoned US20100294364A1 (en) 2007-02-02 2010-07-22 Thermal Spray For Solar Concentrator Fabrication
US12/909,488 Expired - Fee Related US8389851B2 (en) 2007-02-02 2010-10-21 Metal trace fabrication for optical element
US13/586,794 Active US8624102B2 (en) 2007-02-02 2012-08-15 Metal trace fabrication for optical element

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US11/782,605 Abandoned US20090025784A1 (en) 2007-02-02 2007-07-24 Thermal spray for solar concentrator fabrication
US11/782,376 Abandoned US20080185039A1 (en) 2007-02-02 2007-07-24 Conductor fabrication for optical element
US12/841,823 Abandoned US20100294364A1 (en) 2007-02-02 2010-07-22 Thermal Spray For Solar Concentrator Fabrication
US12/909,488 Expired - Fee Related US8389851B2 (en) 2007-02-02 2010-10-21 Metal trace fabrication for optical element
US13/586,794 Active US8624102B2 (en) 2007-02-02 2012-08-15 Metal trace fabrication for optical element

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