Classifications

• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C5/00—Alloys based on noble metals
  • C22C5/02—Alloys based on gold
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
  • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
  • B23K35/24—Selection of soldering or welding materials proper
  • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
  • B23K35/3013—Au as the principal constituent
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Definitions

• the present invention relates to Au alloy bonding wires for wire bonding of semiconductor devices used for connecting external leads of circuit boards to electrodes on semiconductor integrated circuit devices, and more specifically relates to an Au alloy bonding wire according to which the bondability for a first bond and a second bond is improved, and an Au alloy bonding wire according to which the sphericity of a melted ball and the circularity of a squashed ball are improved.
• Au alloy bonding wires containing high-purity gold of purity not lower than 99.99 mass % are widely used.
• a combined ultrasonic-thermo compression bonding method is mainly used. With this method, a tip of the wire is heated and thus melted through arc heat input, thus forming a ball by the surface tension, and then the ball portion is squashed onto an electrode of a semiconductor device that has been heated to a range of 150 to 300° C. Then, for a subsequent second bond, the bonding wire is directly wedge-joined onto the external lead side through ultrasonic compression bonding.
• sealing with an epoxy resin is carried out with an object of protecting the semiconductor chip, the bonding wires, and the lead frame or the like at a portion where the semiconductor chip is attached.
• the size of the semiconductor devices is decreased.
• the number of input/output terminals per unit area is increased, and the Al pad pitch (the spacing between pad centers) is also decreased from 100 ⁇ m to 80 ⁇ m and further to 60 ⁇ m.
• the diameter of bonding wires has thus also started to decrease from 25 ⁇ m to 23 ⁇ m or smaller, and in some cases trials have even been carried out into a wire diameter in the order of 10 ⁇ m.
• Au alloy wires have been introduced from pure Au wires by adding a noble metal element such as Pd to the Au so as to increase the rigidity, and attempts have been made to improve various properties by adding one or a plurality of trace elements.
• growth of an intermetallic compound has been suppressed by retarding Au—Al interdiffusion at the interface between the bonding wire (ball) and the Al alloy to which the bonding wire is joined.
• these elements may function in a complicated manner in the Au alloy and may be deposited out on the surface of the melted ball, whereby good initial bonding cannot be obtained, and there is an increased tendency for it is no longer possible to obtain a reliable first bond and good bondability for the second bond.
• the present status of the matter is that a balance can be obtained by selecting the kinds and amounts of the alloying elements so as to accomplish the wire properties required of the fine wire; as the wire properties required of the fine wire become upgraded, there is no foreseeable end to the search for combinations.
• Japanese Patent No. 3064692 describes a “semiconductor device bonding wire in which 1 wt % of high-purity Pd is added to high-purity Au, and, in addition, 0.0001 to 0.005 wt %, as a total, of at least one selected from Fe, Si, Be, Ca, Ge, Y, Sc and other rare earth elements is added”.
• a “bonding wire of diameter 25 ⁇ m” is given as a working example.
• Japanese Patent Application Laid-open No. 9-321075 describes a “bonding wire characterized by containing 0.0003-0.003 wt % of Ca, containing 0.0005 to 0.01 wt % of Mg, and containing 0.01 to 2.0 wt %, as a total, of at least one selected from Pt, Pd and Cu, the balance comprising Au and unavoidable impurities”.
• an “alloy wire of diameter 0.025 mm” is given as a working example.
• Japanese Patent Application Laid-open No. 11-222639 describes an “fine wire comprising a gold alloy for bringing semiconductor components into contact with one another, characterized in that the gold alloy comprises 0.5 to 0.9 wt % of copper, 0.05 to 0.95 wt % of platinum, and the balance of gold”, and further describes such a gold alloy to which is added “0.0001 to 0.1 wt % of at least one selected from the group consisting of alkaline earth metals and rare earth metals”.
• the “alkaline earth metal(s) is/are beryllium, magnesium and/or calcium”, and the “rare earth metal is cerium”.
• a diameter of 30 ⁇ m is given as a working example.
• Japanese Patent Application Laid-open No. 11-87396 describes an “fine wire for bringing semiconductor structural members into contact with one another comprising a gold alloy containing cerium misch metal, characterized in that the gold alloy comprises 0.05 to 0.95 wt % of platinum, 0.001 to 0.1 wt % of cerium misch metal, 0 to 0.1 wt % of an alkaline earth metal, and the balance of gold, wherein at least 50 wt % of the rare earth metal is cerium”, and moreover states that “the alkaline earth metal comprises a mixture of beryllium and calcium”, and “the platinum is partially or wholly replaced with palladium”.
• the diameter of the wire can be approximately 10 to 200 ⁇ m, and is usually approximately 20 to 60 ⁇ m. This is selected in accordance with the purpose of use”, and “a wire having a diameter of 30 ⁇ m” and “a wire having a diameter of 25 ⁇ m and a wire having a diameter of 30 ⁇ m” are given as working examples.
• Japanese Patent Application Laid-open No. 11-214425 describes a “gold alloy wire for wire bonding of a semiconductor device characterized by adding 0.1 to 3.0 wt % of at least one selected from Zn, Co, Mo and Cr, and 1 to 100 ppm by weight of at least one selected from La, Eu, Be, Y and Ca to high-purity gold”, and further states that it is possible to “add 1 to 500 ppm by weight of at least one selected from Bi, Yb, Sb, Mg, In, Ru and Ir”, and moreover “further add 0.01 to 2.0 wt % of at least one selected from Pd, Pt, Cu and Ag”.
• a diameter of 30 ⁇ m is given as a working example.
• a wire diameter of smaller than 18 ⁇ m is
• Au alloy bonding wires as follows are provided.
• the Au alloy of the present invention even for a fine bonding wire of a diameter not exceeding 23 ⁇ m, as in the case that that the diameter is greater than 23 ⁇ m, an effect of retarding Au—Al interdiffusion, an effect of improving wedge bondability, an effect of suppressing leaning, an effect of improving the sphericity of the melted ball, and an effect of improving the circularity of a squashed ball can all be attained.
• Au alloy bonding wires of the present invention contain, as a matrix alloy, (i) Au and (ii) Pd and/or Pt; desired properties are obtained through selection and adjustment of trace elements contained in this matrix alloy.
• the Au alloy bonding wires can be classified broadly into two groups in terms of the properties to be obtained.
• first group bondability and stability over time (long term reliability) for the first bond and the second bond are predominantly aimed for, and a first invention and a second invention are stipulated.
• the matrix alloy is the same as in the inventions belonging to the first group, and as the additive trace elements contained in the matrix alloy, (vii) Mg, Si and Be are taken as the essential additive trace elements, and these are combined with (viii) either of Ca and Sn.
• the fourth invention (claim 4 ) belonging to the second group as the additive trace elements contained in the matrix alloy, (vii) Mg, Si and Be are taken as the essential additive trace elements, and these are combined with (viii) two elements selected from Ca, Ce and Sn.
• the fifth invention (claim 5 ) belonging to the second group as the additive trace elements contained in the matrix alloy, (vii) Mg, Si and Be are taken as the essential additive trace elements, and these are combined with (ix) the three elements Ca, Ce and Sn.
• Au is high-purity Au, the purity thereof being at least 99.99 mass %, preferably at least 99.999 mass %.
• Pd and/or Pt is of high purity, the purity thereof being at least 99.9 mass %, preferably at least 99.99 mass %.
• the total content of the Pd and Pt in the matrix alloy is thus not exceeding 2 mass %, preferably not exceeding 1.5 mass %, of the matrix alloy. Moreover, to produce stable effects, the lower limit of this content is 0.08 mass %, preferably 0.2 mass %.
• a high temperature storage at 175° C. has indicated the durations of:
• the purity of Mg should be at least 99.9 mass %, preferably at least 99.99 mass %.
• the content of Mg in the matrix alloy is 10 to 100 ppm by mass, preferably 40 to 80 ppm by mass.
• Mg is an element capable of improving the circularity for the first bond and the wedge bondability for the second bond formed by ultrasonic compression bonding. If 10 to 100 ppm by mass of Mg is contained, then the above effects of improving the circularity and the wedge bondability are exhibited. With less than 10 ppm by mass, the circularity and the wedge bondability cannot be improved, and at above 100 ppm by mass, Mg is deposited out on the ball surface and oxidized, and hence the bondability for the first bond worsens. Mg further improves the wedge bondability for the second bond with 40 ppm by mass or higher, and moreover with 80 ppm by mass or lower the sphericity of the melted ball is more stable.
• the sphericity for the melted ball in the present invention is defined as the ratio “across diameter to downward diameter” obtained by measuring the respective diameters of the melted ball as viewed from the wire-free end of the melted ball.
• the value of this sphericity is in a range of 0.99 to 1.01, preferably 0.995 to 1.005.
• the circularity of the squashed ball is defined as the ratio “compression-bonded diameter in perpendicular direction to squashed diameter in parallel direction” upon measuring the respective squashed diameters parallel to and perpendicular to the direction of ultrasonic wave application.
• the value of this circularity is in the range of 0.98 to 1.02, preferably 0.99 to 1.01.
• the purity of Ce should be at least 99.9 mass %, preferably at least 99.99 mass %.
• the content of Ce in the matrix alloy is 5 to 100 ppm by mass for the first group, and 5 to 30 ppm by mass for the second group.
• the purity of Be should be at least 98.5 mass %, preferably at least 99.9 mass %.
• the content of Be in the matrix alloy is 5 to 100 ppm by mass for the first group, and 5 to 30 ppm by mass for the second group.
• Be in the Au alloy matrix improves the circularity for the first bond. If the Be content is less than 5 ppm by mass, then the above effect of improving the circularity cannot be obtained, whereas if the Be content is greater than 30 ppm by mass, the result is that an increased amount of the oxide is formed on the surface of the melted ball and hence the bondability for the first bond worsens.
• the purity of Si should be at least 99.99 mass %, preferably at least 99.999 mass %.
• the content of Si in the matrix alloy is 5 to 100 ppm by mass for the first group, and 5 to 30 ppm by mass for the second group.
• Si in the Au alloy matrix is an element that maintains the loop formability, and the circularity of the squashed ball. If the Si content is less than 5 ppm by mass, then the loop formability cannot be maintained, whereas if the Si content is greater than 30 ppm by mass, then it would be difficult to obtain good circularity.
• the purity of Gd should be at least 99 mass %, preferably at least 99.5 mass %.
• the content of Gd in the matrix alloy is 5 to 100 ppm by mass for the first group.
• Gd in the Au alloy matrix is an element that maintains the loop formability, and the circularity of the squashed ball. If the Gd content is lower than 5 ppm by mass, then the loop formability cannot be maintained, whereas if the Gd content is greater than 30 ppm by mass, then it would be difficult to obtain good circularity.
• the purity of Ca should be at least 99 mass %, preferably at least 99.5 mass %.
• the content of Ca in the matrix alloy is 5 to 30 ppm by mass.
• Ca in the Au alloy matrix improves the strength of the wire. It has been found that, even for an fine wire having a diameter of not exceeding 23 ⁇ m, Ca increases the rigidity of the fine wire itself, whereby the loop formability can be maintained, and moreover the circularity of the squashed ball in the first bonding can be maintained. If the Ca content is lower than 5 ppm by mass, then the above effect of improving the circularity cannot be obtained.
• the Ca content in the matrix alloy is preferably in the range of 5 to 30 ppm by mass.
• the total content of all the trace elements in the Au alloy matrix is greater than 100 ppm by mass, then oxides are prone to be produced on the surface of the melted ball, and hence the bondability for the first bond will worsen.
• the purity of each of the elements Ce, Y, Eu, La and Sn should be at least 99.9 mass %, preferably at least 99.99 mass %.
• the content of each trace elements in the matrix alloy is 5 to 100 ppm by mass, preferably 5 to 80 ppm by mass for La, and 5 to 30 ppm by mass for the other elements.
• the amount of each element among Ce, and Y, Gd, Be, La, Si and Eu is smaller than 5 ppm by mass, then it will not be possible to maintain the loop formability of the alloy wire of Au—Pd or the like, and moreover it will be difficult to maintain the circularity of the squashed ball in the first bonding. Moreover, if the amount of each of the above elements is larger than 100 ppm by mass, or the total amount of these elements is larger than 100 ppm by mass, then the melted ball will become misshapen, or the rigidity of the fine wire itself will become too high, and hence the semiconductor chip will become prone to breaking. If the content of each of the above elements is not more than 30 ppm by mass, then the circularity of the squashed ball will be yet more stable.
• the trace elements may be deposited out on the surface of the melted ball of the Au alloy matrix of Au—Pd or the like and oxidized, resulting in the bondability for the first bond worsening, or the circularity of the squashed ball worsening.
• the order of the effect of improving the circularity has been found to be, from the best to the worst, Si, Be, La, Ce, Ca, Eu, Y and Gd. That is, in combinations with Ce, the order is Ce—Si, Ce—Be, Ce—La, Ce—Y, and Ce—Gd. Moreover, in combinations with Be, the order is Be—Si, Be—Ca, Be—Eu, and Be—Y.
• the trace elements Mg, Ce, Y, Gd, Be, Ca, Eu, La and Si used in the present invention are added in trace amounts in a suitable combination to the alloy of high-purity Au—Pd or the like, and hence can be contained uniformly in the Au alloy without segregation; there is thus no unintentional deposition out to form an oxide film on the surface of the Au alloy as with Zn or a large amount of Ca being added alone.
• Mg and so on are elements having good dispersibility in an Au alloy matrix of high-purity Au—Pd or the like, and are trace elements for which there is no formation of an oxide film on the surface of the fine wire or the melted ball even if ball bonding is carried out in the air. It was not predictable that by combining suitable ones selected from Mg, Ce, Y, Gd, Be, La, Si, Ca and Eu in amounts in suitable ranges as in the present invention, these trace elements would all have good dispersibility in the Au alloy matrix, with deposition out onto the surface not occurring, and hence stability in the quality as a bonding wire could be obtained.
• each sample is shown in Table 1 for the working examples of the first group (Working Examples 1 to 57) and in Table 2 for the working examples of the second group (Working Examples 58 to 81).
• Trace elements were added such that the amounts (ppm by mass) thereof would be as in Table 1 or Table 2 to an alloy of high-purity Au of purity 99.999 mass % or more and high-purity Pd and/or Pt of purity 99.99 mass %, or more and melt-casting was carried out in a vacuum melting furnace. Drawing into a wire was then carried out, and then final heat treatment was carried out at a wire diameter of 25 ⁇ m, 20 ⁇ m or 15 ⁇ m, and the elongation was adjusted to 4%. The ultimate elongation and tensile strength of each bonding wire were evaluated by carrying out tensile testing on 10 of each of the wires cut in a length of 10 cm, and then calculating the average values.
• connection was carried out in which each type of fine wire was subjected to first bonding to a 50 ⁇ m-square Al pad (Al film thickness approximately 1 ⁇ m) on an Si chip by way of ball bonding with a joint ultrasonic-thermocompression bonding method in the air, and was then subjected to second bonding to an Ag-plated 42 alloy lead using wedge bonding with a joint ultrasonic-thermocompression bonding method.
• the loop span was made to be 5 mm
• the loop height was made to be 200 ⁇ m
• a X200-pin QFP (package)” having 200 Al pads was used.
• all of the balls were formed within the 50 ⁇ m-square Al pad.
• compositions of the samples in these comparative examples having a formulation of the trace elements differing from those of the working examples are each shown in Table 3. Note that Comparative Examples 1 to 17 are comparative examples corresponding to the first group, and Comparative Examples 18 to 23 are comparative examples corresponding to the second group.
• the fine wires of Au alloys were subjected, in the same manner as in the working examples, to a final heat treatment to adjust the elongation to 4% at a wire diameter of 25, 20 or 15 ⁇ m and subjected to evaluation in the same manner as in Example 1.
• the results of evaluation are shown in Table 6.
• the Al pad was dissolved in a 10% aqueous NaOH solution, the bonding surface was observed with a scanning electron microscope, and the proportion of the area where an Au—Al alloy had been formed on the bonding surface was determined.
• the case where Au—Al had formed on at least 70% of the bonding surface was taken as very good and indicated by “ ”, the case where Au-Al had formed on at least 50% but less than 70% of the bonding surface was taken as good and indicated by “ ⁇ ”, and the case where Au-Al had formed on less than 50% of the bonding surface was taken as normal and indicated by “ ⁇ ”.
• the across and down diameters of the underside of the melted ball were measured, and the case where the ratio therebetween was in the range of 0.995 to 1.005 was indicated by “ ”, and the case where the ratio therebetween was in the range of 0.99 to 1.01 excluding the above range was indicated by “ ⁇ ”. The case where the ratio was outside these ranges was indicated by “ ⁇ ”.
• the measurement was carried out by selecting ten samples in each case; the average value is shown. However, for Working Examples 58, 62 and 72, the number of samples was increased to 50, whereby the extent of variation for the second group could be determined more accurately.
• the squashed diameter was measured parallel to and perpendicular to the direction in which the ultrasonic waves were applied, and the case where the ratio therebetween was in a range of 0.99 to 1.01 was indicated by “ ”, and the case where the ratio therebetween was in a range of 0.98 to 1.02 excluding the above range was indicated by “ ⁇ ”. The case where the ratio was outside these ranges was indicated by “ ⁇ ”.
• the measurement was carried out by selecting 200 samples for the first group and 5000 samples for the second group; the average value is shown.
• the approximate center of the loop span was hooked upward, and the load at breakage was measured.
• the wire diameter was 25 ⁇ m
• the case where the load was 6 ⁇ 10 mN or larger was indicated by “ ”
• the case where the load was in the range of 4 ⁇ 10 to 6 ⁇ 10 mN was indicated by “ ⁇ ”
• the case where the load was smaller than 4 ⁇ 10 mN was indicated by “ ⁇ ”.
• the alloy of the present invention is suitable for bonding wires used in automotive semiconductor devices, in particular, and in semiconductors for service under ambience sometimes becoming hot.

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• 2005
  • 2005-09-28 WO PCT/JP2005/017819 patent/WO2006035803A1/ja active Application Filing
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