TWI371808B - Au alloy bonding wire - Google Patents

Au alloy bonding wire

Info

Publication number
TWI371808B
TWI371808B TW094134343A TW94134343A TWI371808B TW I371808 B TWI371808 B TW I371808B TW 094134343 A TW094134343 A TW 094134343A TW 94134343 A TW94134343 A TW 94134343A TW I371808 B TWI371808 B TW I371808B
Authority
TW
Taiwan
Prior art keywords
bonding wire
alloy bonding
alloy
wire
bonding
Prior art date
Application number
TW094134343A
Other languages
English (en)
Other versions
TW200620510A (en
Inventor
Hiroshi Murai
Jun Chiba
Satoshi Teshima
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of TW200620510A publication Critical patent/TW200620510A/zh
Application granted granted Critical
Publication of TWI371808B publication Critical patent/TWI371808B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013Au as the principal constituent
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    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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TW094134343A 2004-09-30 2005-09-30 Au alloy bonding wire TWI371808B (en)

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440137B2 (en) * 2004-11-26 2013-05-14 Tanaka Denshi Kogyo K.K. Au bonding wire for semiconductor device
JP4726205B2 (ja) * 2005-06-14 2011-07-20 田中電子工業株式会社 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4596467B2 (ja) * 2005-06-14 2010-12-08 田中電子工業株式会社 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4134261B1 (ja) * 2007-10-24 2008-08-20 田中電子工業株式会社 ボールボンディング用金合金線
JP4150752B1 (ja) * 2007-11-06 2008-09-17 田中電子工業株式会社 ボンディングワイヤ
JP5024907B2 (ja) * 2010-01-06 2012-09-12 田中電子工業株式会社 金(Au)合金ボンディングワイヤ
JP5403436B2 (ja) * 2010-10-08 2014-01-29 タツタ電線株式会社 ボールボンディング用ワイヤ
CN102589753B (zh) 2011-01-05 2016-05-04 飞思卡尔半导体公司 压力传感器及其封装方法
JP4771562B1 (ja) * 2011-02-10 2011-09-14 田中電子工業株式会社 Ag−Au−Pd三元合金系ボンディングワイヤ
CN103842529B (zh) * 2011-03-01 2016-08-24 田中电子工业株式会社 金(Au)合金键合线
US8643169B2 (en) 2011-11-09 2014-02-04 Freescale Semiconductor, Inc. Semiconductor sensor device with over-molded lid
US9029999B2 (en) 2011-11-23 2015-05-12 Freescale Semiconductor, Inc. Semiconductor sensor device with footed lid
JP5080682B1 (ja) * 2011-12-02 2012-11-21 田中電子工業株式会社 金−白金−パラジウム合金ボンディングワイヤ
US9297713B2 (en) 2014-03-19 2016-03-29 Freescale Semiconductor,Inc. Pressure sensor device with through silicon via
US9362479B2 (en) 2014-07-22 2016-06-07 Freescale Semiconductor, Inc. Package-in-package semiconductor sensor device
CN105355615B (zh) * 2015-11-02 2019-03-08 苏州感芯微系统技术有限公司 一种芯片的片上导线直接引出结构及制作方法
TWI657154B (zh) * 2016-04-28 2019-04-21 日商日鐵住金新材料股份有限公司 半導體裝置用接合線
CN107527874B (zh) 2016-06-20 2023-08-01 恩智浦美国有限公司 腔式压力传感器器件
CN115029579A (zh) * 2022-05-13 2022-09-09 丰睿成科技(深圳)股份有限公司 一种蒸发工艺的混合高金丝
CN115261663B (zh) * 2022-08-01 2023-05-02 江西蓝微电子科技有限公司 一种金合金键合丝及其制备方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3130917A (en) * 1961-08-14 1964-04-28 Elie P Aghnides Water aerator having improved pre-aerating disc
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
DE69126604T2 (de) * 1991-03-13 1998-01-08 Ibm Anpassungseinrichtung und Verfahren zur wirksamen Verbindung von Datenverarbeitungseinrichtungen und Netzwerken
JP2780611B2 (ja) * 1993-09-06 1998-07-30 三菱マテリアル株式会社 少量成分の合金化で硬質化した金装飾品材
JP3337049B2 (ja) * 1995-05-17 2002-10-21 田中電子工業株式会社 ボンディング用金線
KR100273702B1 (ko) * 1995-08-23 2000-11-15 사토 케이지 본딩용 금합금 세선의 제조방법
JPH09107400A (ja) * 1995-10-12 1997-04-22 Fujitsu Ltd 通信属性変換装置の自動捕捉方法及びその装置とそれを有する通信システム
JP3328135B2 (ja) * 1996-05-28 2002-09-24 田中電子工業株式会社 バンプ形成用金合金線及びバンプ形成方法
JPH09321075A (ja) * 1996-05-28 1997-12-12 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
ATE224961T1 (de) * 1996-06-12 2002-10-15 Kazuo Ogasa Verfahren zur herstellung von einer hochreinen hartgoldlegierung
JP3690902B2 (ja) * 1996-07-31 2005-08-31 田中電子工業株式会社 ウエッジボンディング用金合金線
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP3729302B2 (ja) * 1997-04-17 2005-12-21 住友金属鉱山株式会社 ボンディング用金合金細線
EP0890987B1 (de) * 1997-07-07 2003-03-05 W.C. Heraeus GmbH & Co. KG Feinstdraht aus einer Goldlegierung, Verfahren zu seiner Herstellung und seine Verwendung
US6167449A (en) * 1997-11-19 2000-12-26 Apple Computer, Inc. System and method for identifying and locating services on multiple heterogeneous networks using a query by type
US6426947B1 (en) * 1998-10-21 2002-07-30 Kim K. Banker Apparatus and method for unilateral topology discovery in network management
CN1236691A (zh) * 1998-05-15 1999-12-01 田中电子工业株式会社 金合金焊丝及其应用
US6594700B1 (en) * 1999-06-14 2003-07-15 International Business Machines Corporation System and method for implementing a universal service broker interchange mechanism
JP3382918B2 (ja) * 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
JP3323185B2 (ja) * 2000-06-19 2002-09-09 田中電子工業株式会社 半導体素子接続用金線
US7158515B1 (en) * 2000-07-06 2007-01-02 Nortel Networks Limited Method of optical network bandwidth representation for optical label switching networks
WO2002023618A1 (fr) * 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
US20020099814A1 (en) * 2001-01-24 2002-07-25 International Business Machines Corporation Method and apparatus for providing automatic discovery of network protocols, configurations and resources
US6785542B1 (en) * 2001-02-28 2004-08-31 Palm Source, Inc. Resource proxy for mobile wireless electronic devices
EP1292084A3 (de) * 2001-09-07 2005-10-26 Siemens Aktiengesellschaft Verfahren zur Übertragung von Daten in einem paketorientierten Datennetz
KR100427749B1 (ko) * 2002-05-07 2004-04-28 엠케이전자 주식회사 반도체 소자 본딩용 금-은 합금 와이어
US7685288B2 (en) * 2003-06-30 2010-03-23 Microsoft Corporation Ad-hoc service discovery protocol
US20050060411A1 (en) * 2003-09-16 2005-03-17 Stephane Coulombe System and method for adaptation of peer-to-peer multimedia sessions
US7403512B2 (en) * 2003-10-14 2008-07-22 Intel Corporation Service discovery architecture and method for wireless networks
US7933290B2 (en) * 2004-03-30 2011-04-26 Nokia Corporation System and method for comprehensive service translation

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WO2006035803A1 (ja) 2006-04-06
US20080050267A1 (en) 2008-02-28
KR100899322B1 (ko) 2009-05-27
TW200620510A (en) 2006-06-16
KR20070058681A (ko) 2007-06-08
CN100487883C (zh) 2009-05-13
EP1811555A1 (en) 2007-07-25
CN101040372A (zh) 2007-09-19
JP3969671B2 (ja) 2007-09-05
JPWO2006035803A1 (ja) 2008-05-15
EP1811555A4 (en) 2012-06-20

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