US20070098590A1 - Ni-pt alloy and target comprising the alloy - Google Patents
Ni-pt alloy and target comprising the alloy Download PDFInfo
- Publication number
- US20070098590A1 US20070098590A1 US10/596,671 US59667105A US2007098590A1 US 20070098590 A1 US20070098590 A1 US 20070098590A1 US 59667105 A US59667105 A US 59667105A US 2007098590 A1 US2007098590 A1 US 2007098590A1
- Authority
- US
- United States
- Prior art keywords
- alloy
- high purity
- purity
- target
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910001260 Pt alloy Inorganic materials 0.000 title claims abstract description 59
- 239000000956 alloy Substances 0.000 title description 10
- 229910045601 alloy Inorganic materials 0.000 title description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 5
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 5
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims abstract description 5
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims abstract description 4
- 238000004090 dissolution Methods 0.000 claims abstract description 4
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 4
- 238000002386 leaching Methods 0.000 claims abstract description 4
- 238000007664 blowing Methods 0.000 claims abstract description 3
- 238000001914 filtration Methods 0.000 claims abstract description 3
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 3
- 238000005477 sputtering target Methods 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 238000005097 cold rolling Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Definitions
- the present invention relates to a Ni—Pt alloy superior in workability, a sputtering target manufacturing by rolling a Ni—Pt alloy ingot, and a manufacturing method of such Ni—Pt alloy and Ni—Pt alloy target.
- Ni—Pt is used as a sputtering target for semiconductor devices, and this Ni—Pt target was conventionally manufactured with the powder metallurgy process. In other words, the target was manufactured by sintering Ni powder and Pt powder, or by sintering Ni—Pt alloy powder.
- gas components easily get mixed into the target, and not only does this reduce purity, it causes abnormal electrical discharge during sputtering, induces the generation of particles, and deteriorates the deposition characteristics.
- a Ni—Pt product formed via melting and casting has a problem in that it is extremely hard and brittle.
- a Ni—Pt ingot is rolled, there is a problem in that grain boundary fractures occur, and it is not possible to manufacture a flat and even planar target. This is the reason targets were manufactured with the powder metallurgy process as described above.
- Patent Document 1 considered the cause of fractures to be the coarsened crystal grains in the target and, in order to obtain fine crystal grains, attempted to inhibit the coarsening of crystals by preparing a mold with large heat capacity or a water-cooled mold, and performing rapid quenching by inhibiting the temperature rise of the mold.
- Patent Document 1 there is a drawback in that large equipment is necessary for preparing a mold with large heat capacity or a water-cooled mold, and there is a problem in that it is difficult to inhibit the coarsening of crystals unless the cooling speed is considerably fast.
- An object of the present invention is to provide technology capable of rolling a Ni—Pt alloy ingot upon reducing the hardness thereof, and manufacturing a rolled target stably and efficiently.
- the present inventors discovered that by increasing the purity of the Ni—Pt alloy, it is possible to significantly reduce the hardness of the Ni—Pt alloy ingot.
- the present invention provides 1) a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy, and 2) the Ni—Pt alloy and Ni—Pt alloy target according to 1) above having a purity of 99.99% or higher.
- the present invention also provides 3) a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities by filtering the neutralized solution with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt, 4) the manufacturing method of Ni—Pt alloy according to 3) above wherein the Ni—Pt alloy has a purity of 99.99% or higher, and 5) the manufacturing method of Ni—Pt alloy superior in workability according to 3) or 4)
- the present invention also provides 6) the manufacturing method of a Ni—Pt alloy target, wherein the dissolved Ni—Pt alloy ingot manufactured based on any one of the methods according to 3) to 5) above.
- the present invention is able to easily perform cool rolling to a dissolved Ni—Pt alloy ingot without requiring any equipment, such as preparing a mold with large heat capacity or a water-cooled mold, for accelerating the cooling speed in order to inhibit the coarsening of crystals, and yields a superior effect in that it is possible to improve the quality of the Ni—Pt alloy deposition by reducing impurities contained in the Ni—Pt alloy target and realizing high purification.
- the present invention can be applied to a Ni—Pt alloy containing Pt in a content of 0.1 to 20 wt %.
- This component composition is required in the deposition of a Ni—Pt alloy material of semiconductor devices, and is also a composition range of the Ni—Pt alloy or target of the present invention capable of reducing the hardness.
- the Vickers hardness obtained by the Ni—Pt alloy of the present invention is 40 to 90.
- the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed. This is a significant feature of the present invention.
- the Pt content is set to be 0.1 to 20 wt %.
- the Ni—Pt alloy and Ni—Pt alloy target of the present invention have a purity of 99.99% or higher.
- the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed.
- Ni—Pt alloy superior in workability is explained; as for a Ni raw material, foremost, a raw material Ni having a purity of 3N level is subject to electrochemical dissolution, the electrolytically leached solution is thereafter neutralized with ammonia, and the neutralized solution is filtered with activated carbon to remove impurities.
- Pt raw material a raw material Pt having a purity of 3N level is leached with acid, and this leached solution is subject to electrolysis to manufacture high purity electrodeposited Pt.
- the obtained Ni—Pt alloy has a purity of 99.99% (4N) or higher.
- Ni—Pt alloy ingot obtained via melting and casting as described above has a Pt content of 0.1 to 20 wt % and a Vickers hardness of 40 to 90. Also as described above, this ingot is superior in workability.
- the high purity Ni powder and high purity electrodeposited Pt obtained as described above were dissolved under a vacuum where the degree of vacuum was 10 ⁇ 4 Torr to obtain high purity Ni-20% Pt alloy.
- the hardness of this alloy was Hv 80. This alloy was rolled at room temperature to obtain a target.
- Example 2 As with Example 1, high purity Ni-10% Pt alloy was prepared. The hardness of this alloy was Hv 65. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2. TABLE 2 (wtppm) Example 2 Example 3 Example 4 Fe 2.0 1.9 1.8 Cr 0.6 0.6 Co 0.5 0.5 0.5 Cu 0.1 0.1 0.1 Al 0.1 0.1 0.1 O 20 20 20 C 10 10 10 N ⁇ 10 ⁇ 10 ⁇ 10 Hardness 45 55 65 Plastic Workability at Excellent Excellent Excellent Room Temperature
- the present invention yields a superior effect in that it is easy to perform cold rolling to a dissolved Ni—Pt alloy ingot, and is capable of simultaneously reducing the impurities contained in the Ni—Pt alloy target to realize high purification. As a result, it is possible to improve the quality of Ni—Pt alloy deposition.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Manufacture And Refinement Of Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/957,013 US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056097 | 2004-03-01 | ||
| JP2004-056097 | 2004-03-01 | ||
| PCT/JP2005/001813 WO2005083138A1 (ja) | 2004-03-01 | 2005-02-08 | Ni-Pt合金及び同合金ターゲット |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2005/001813 A-371-Of-International WO2005083138A1 (ja) | 2004-03-01 | 2005-02-08 | Ni-Pt合金及び同合金ターゲット |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/957,013 Division US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20070098590A1 true US20070098590A1 (en) | 2007-05-03 |
Family
ID=34908895
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/596,671 Abandoned US20070098590A1 (en) | 2004-03-01 | 2005-02-08 | Ni-pt alloy and target comprising the alloy |
| US12/957,013 Active US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/957,013 Active US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20070098590A1 (ja) |
| EP (2) | EP1721997B1 (ja) |
| JP (2) | JP4409572B2 (ja) |
| KR (2) | KR100925691B1 (ja) |
| CN (1) | CN100567535C (ja) |
| TW (1) | TWI264480B (ja) |
| WO (1) | WO2005083138A1 (ja) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040256035A1 (en) * | 2002-01-18 | 2004-12-23 | Yasuhiro Yamakoshi | Target of high-purity nickel or nickel alloy and its producing method |
| US20060037680A1 (en) * | 2003-01-10 | 2006-02-23 | Nikko Materials Co., Ltd | Nickel alloy sputtering target |
| US20060292028A1 (en) * | 2003-10-07 | 2006-12-28 | Nikko Materials Co., Ltd. | High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy |
| US20070074790A1 (en) * | 2003-10-24 | 2007-04-05 | Nikko Materials Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
| US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
| WO2010080469A2 (en) | 2008-12-19 | 2010-07-15 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
| US20110068014A1 (en) * | 2004-03-01 | 2011-03-24 | Jx Nippon Mining & Metals Corporation | Ni-Pt Alloy and Target Comprising the Same |
| US20110135942A1 (en) * | 2009-02-10 | 2011-06-09 | Jx Nippon Mining & Metals Corporation | Nickel Alloy Sputtering Target and Nickel Silicide Film |
| US9249497B2 (en) | 2010-03-19 | 2016-02-02 | Jx Nippon Mining & Metals Corporation | Ni alloy sputtering target, Ni alloy thin film and Ni silicide film |
| US9328412B2 (en) | 2010-08-31 | 2016-05-03 | Jx Nippon Mining & Metals Corporation | Fe—Pt-based ferromagnetic material sputtering target |
| US10337100B2 (en) | 2014-03-27 | 2019-07-02 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor |
| CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5301530B2 (ja) * | 2008-03-28 | 2013-09-25 | Ｊｘ日鉱日石金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
| KR101032011B1 (ko) | 2009-02-10 | 2011-05-02 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막 |
| US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
| JP6340621B2 (ja) * | 2013-07-26 | 2018-06-13 | 三菱マテリアル株式会社 | Ｎｉスパッタリングターゲット及びその製造方法 |
| CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
| CN104018128B (zh) * | 2014-05-29 | 2016-08-24 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
| US20170198582A1 (en) | 2014-05-30 | 2017-07-13 | National Oilwell Varco, L.P. | Well site pump with integrated driver and hydraulic motor and method of using same |
| US10246770B2 (en) | 2015-06-26 | 2019-04-02 | Tanaka Kikinzoku Kogyo K.K. | Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film |
| CN106282639B (zh) * | 2016-09-19 | 2018-02-16 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
| CN111304608B (zh) * | 2020-03-17 | 2021-10-15 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
| CN112853131B (zh) * | 2020-12-30 | 2022-07-19 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
| IT202100003281A1 (it) | 2021-02-15 | 2022-08-15 | Bluclad S P A | Lega pt-ni elettrodepositata anallergica e relativi bagno e ciclo galvanico |
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| US20060037680A1 (en) * | 2003-01-10 | 2006-02-23 | Nikko Materials Co., Ltd | Nickel alloy sputtering target |
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| JPS6333563A (ja) * | 1986-07-25 | 1988-02-13 | Tanaka Kikinzoku Kogyo Kk | スパツタリング用Ｐｔ−Ｎｉ合金タ−ゲツトの製造方法 |
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| JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
| JPH11335821A (ja) | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲットの製造方法 |
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| JP2003213407A (ja) | 2002-01-24 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法 |
| US6845542B2 (en) * | 2002-08-27 | 2005-01-25 | The Research Foundation Of State University Of New York | Portable, fully contained and disposable suction device |
| EP1672086B1 (en) | 2003-10-07 | 2019-03-13 | JX Nippon Mining & Metals Corporation | HIGH-PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY |
| WO2005041290A1 (ja) | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
| EP1721997B1 (en) | 2004-03-01 | 2012-03-28 | JX Nippon Mining & Metals Corporation | Method of manufacturing a Ni-Pt ALLOY. |
-
2005
- 2005-02-08 EP EP05709865A patent/EP1721997B1/en active Active
- 2005-02-08 KR KR1020067019867A patent/KR100925691B1/ko active IP Right Grant
- 2005-02-08 WO PCT/JP2005/001813 patent/WO2005083138A1/ja active Application Filing
- 2005-02-08 EP EP11188413.6A patent/EP2468906B1/en active Active
- 2005-02-08 JP JP2006510388A patent/JP4409572B2/ja active Active
- 2005-02-08 CN CNB2005800065132A patent/CN100567535C/zh active Active
- 2005-02-08 US US10/596,671 patent/US20070098590A1/en not_active Abandoned
- 2005-02-08 KR KR1020097019099A patent/KR101021488B1/ko active IP Right Grant
- 2005-02-21 TW TW094105007A patent/TWI264480B/zh active
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2009
- 2009-10-09 JP JP2009235184A patent/JP5113134B2/ja active Active
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2010
- 2010-11-30 US US12/957,013 patent/US7959782B2/en active Active
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040256035A1 (en) * | 2002-01-18 | 2004-12-23 | Yasuhiro Yamakoshi | Target of high-purity nickel or nickel alloy and its producing method |
| US20060137782A1 (en) * | 2002-01-18 | 2006-06-29 | Nikko Materials Co., Ltd. | Target of high-purity nickel or nickel alloy and its producing method |
| US7740718B2 (en) | 2002-01-18 | 2010-06-22 | Nippon Mining & Metals Co., Ltd. | Target of high-purity nickel or nickel alloy and its producing method |
| US7618505B2 (en) | 2002-01-18 | 2009-11-17 | Nippon Mining & Metals Co., Ltd. | Target of high-purity nickel or nickel alloy and its producing method |
| US20060037680A1 (en) * | 2003-01-10 | 2006-02-23 | Nikko Materials Co., Ltd | Nickel alloy sputtering target |
| US8871144B2 (en) | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
| US20060292028A1 (en) * | 2003-10-07 | 2006-12-28 | Nikko Materials Co., Ltd. | High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy |
| US20100242674A1 (en) * | 2003-10-07 | 2010-09-30 | Nippon Mining And Metals Co., Ltd. | High-Purity Ni-V Alloy, Target therefrom, High-Purity Ni-V Alloy Thin Film and Process for Producing High-Purity Ni-V Alloy |
| US7938918B2 (en) | 2003-10-07 | 2011-05-10 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy, target therefrom, high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
| US7605481B2 (en) | 2003-10-24 | 2009-10-20 | Nippon Mining & Metals Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
| US20070074790A1 (en) * | 2003-10-24 | 2007-04-05 | Nikko Materials Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
| US7959782B2 (en) | 2004-03-01 | 2011-06-14 | Jx Nippon Mining & Metals Corporation | Method of manufacturing a Ni-Pt alloy |
| US20110068014A1 (en) * | 2004-03-01 | 2011-03-24 | Jx Nippon Mining & Metals Corporation | Ni-Pt Alloy and Target Comprising the Same |
| US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
| WO2010080469A2 (en) | 2008-12-19 | 2010-07-15 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
| US20110135942A1 (en) * | 2009-02-10 | 2011-06-09 | Jx Nippon Mining & Metals Corporation | Nickel Alloy Sputtering Target and Nickel Silicide Film |
| CN102165094A (zh) * | 2009-02-10 | 2011-08-24 | Jx日矿日石金属株式会社 | 镍合金溅射靶及镍硅化物膜 |
| US8114341B2 (en) | 2009-02-10 | 2012-02-14 | Jx Nippon Mining & Metals Corporation | Nickel alloy sputtering target and nickel silicide film |
| US9249497B2 (en) | 2010-03-19 | 2016-02-02 | Jx Nippon Mining & Metals Corporation | Ni alloy sputtering target, Ni alloy thin film and Ni silicide film |
| US9328412B2 (en) | 2010-08-31 | 2016-05-03 | Jx Nippon Mining & Metals Corporation | Fe—Pt-based ferromagnetic material sputtering target |
| US10337100B2 (en) | 2014-03-27 | 2019-07-02 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor |
| CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1721997B1 (en) | 2012-03-28 |
| US7959782B2 (en) | 2011-06-14 |
| CN1926254A (zh) | 2007-03-07 |
| JP2010047843A (ja) | 2010-03-04 |
| US20110068014A1 (en) | 2011-03-24 |
| WO2005083138A1 (ja) | 2005-09-09 |
| KR20060114384A (ko) | 2006-11-06 |
| CN100567535C (zh) | 2009-12-09 |
| KR100925691B1 (ko) | 2009-11-10 |
| EP1721997A1 (en) | 2006-11-15 |
| KR101021488B1 (ko) | 2011-03-16 |
| EP2468906B1 (en) | 2014-07-23 |
| JP5113134B2 (ja) | 2013-01-09 |
| EP1721997A4 (en) | 2009-11-11 |
| EP2468906A1 (en) | 2012-06-27 |
| TWI264480B (en) | 2006-10-21 |
| JP4409572B2 (ja) | 2010-02-03 |
| KR20090101393A (ko) | 2009-09-25 |
| JPWO2005083138A1 (ja) | 2007-11-22 |
| TW200530429A (en) | 2005-09-16 |
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