US20060273337A1 - Side-emitting LED package and method of manufacturing the same - Google Patents

Side-emitting LED package and method of manufacturing the same Download PDF

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Publication number
US20060273337A1
US20060273337A1 US11/444,402 US44440206A US2006273337A1 US 20060273337 A1 US20060273337 A1 US 20060273337A1 US 44440206 A US44440206 A US 44440206A US 2006273337 A1 US2006273337 A1 US 2006273337A1
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United States
Prior art keywords
molded part
substrate
light
reflection layer
light source
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Abandoned
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US11/444,402
Inventor
Kyung Han
Myoung Choi
Seon Lee
Hun Hahm
Seong Han
Chang Song
Young Park
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Filing date
Publication date
Priority to KR10-2005-0046618 priority Critical
Priority to KR1020050046618A priority patent/KR100691179B1/en
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD. reassignment SAMSUNG ELECTRO-MECHANICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAN, KYUNG TAEG, CHOI, MYOUNG SOO, HAHM, HUN JOO, HAN, SEONG YEON, LEE, SEON GOO, PARK, YOUNG SAM, SONG, CHANG HO
Publication of US20060273337A1 publication Critical patent/US20060273337A1/en
Application status is Abandoned legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12035Zener diode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

The invention relates to a side-emitting LED package and a manufacturing method thereof. The side-emitting LED package includes a substrate with an electrode formed thereon, and a light source disposed on the substrate and electrically connected to the electrode. The side-emitting LED package also includes a molded part having an upper surface with a center thereof depressed concavely, covering and protecting the substrate and the light source, and a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface. The package is not restricted in the shape of the molded part and is not affected by the LED chip size, enabling a compact structure. The invention can also process a substrate by a PCB process, enabling mass-production.

Description

    CLAIM OF PRIORITY
  • This application claims the benefit of Korean Patent Application No. 2005-46618 filed on Jun. 1, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a side-emitting LED package for emitting light sideward, and a method of manufacturing the same. More particularly, the invention relates to a side-emitting LED package, which has a reflective layer easily manufactured into desired shapes for emitting light sideward, can be mass-produced in a compact size regardless of an LED chip size, and can have an LED array inside thereof, thereby significantly improving productivity, and a method of manufacturing the same.
  • 2. Description of the Related Art
  • Recently, an LED package has been increasingly adopted in an LCD backlight unit (LCD BLU). The high power package used for an LCD backlight unit adopts vertical side emission method in which a package with a heat slug mounted thereon is covered by a lens, which results in a problem of a quite large thickness. However, the current trend is that slimmer LCD backlight units require slimmer LED packages therefor.
  • FIG. 1(a) illustrates a side emitting LED package 200 according to the prior art. In such a conventional structure, a substrate 210 with an LED chip 205 mounted thereon is covered by a lens 212. This entails an additional process of bonding the lens 212 onto the substrate 210 in which a separate lens 212 is manufactured and bonded.
  • FIG. 1(b) illustrates another conventional LED structure 230. In this conventional technology, a planar reflective film 237 is formed on a molded part 235 on a substrate 232. However, this method is not effective in allowing light from the LED chip 240 to be reflected on the reflective film and reflected sideward from the package.
  • FIG. 2(a) illustrates further another structure of an LED package 260. This conventional structure is taught in Japanese Patent Publication 10-82916, in which a molded part 262 has a concave depression on an upper surface thereof, and a reflection layer 265 formed on the concave depression to form a light transmitting surface around the sides of the molded part 262. However, in such a conventional structure, the light reflection layer 265 is formed only on some portion of the center of the molded part 262, and an LED chip 270 is mounted on a trapezoid-shaped lead terminal 272.
  • Therefore, such a conventional structure is limited in emitting light sideward from a conventional upward direction, and the lead terminal results in low productivity per hour.
  • FIG. 2(b) illustrates yet another LED package 300, which is taught in U.S. Pat. No. 6,674,096 granted to Mathew L. Sommers. In this structure, a transparent molded part 304 wraps around an LED chip 302 and has a reflective surface 306 with a concavely depressed center on an upper surface thereof. And the molded part 304 has a reflective layer 308 formed on the reflecting surface 306, forming a light transmitting surface 310 around the sides of the molded part 304.
  • In this conventional structure, however, light is scattered upward, and thus is limited in effectively inducing light to be emitted sideward, and also has low productivity per hour owing to the lead terminal.
  • SUMMARY OF THE INVENTION
  • The present invention has been made to solve the foregoing problems of the prior art and it is therefore an object of the present invention to provide a side-emitting LED package which prevents light from being scattered upward beyond a reflective layer and effectively reflects light sideward, and a method of manufacturing the same.
  • It is another object of the invention to provide a side-emitting LED package having a molded part easily manufactured in a desired shape, which can be mass-produced by a manufacturing process of a PCB, and a method of manufacturing thereof.
  • It is yet another object of the invention to provide a method of manufacturing a side-emitting LED package adopting EMC (Epoxy Molding Compound) transfer molding to minimize color dispersion.
  • According to an aspect of the invention for realizing the object, there is provided a light emitting diode (LED) package for emitting light sideward from a light source including: a substrate with an electrode formed thereon; a light source disposed on the substrate and electrically connected to the electrode; a molded part having an upper surface with a center thereof depressed concavely, the molded part covering and protecting the substrate and the light source; and a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface.
  • According to another aspect of the invention for realizing the object, there is provided a method of manufacturing a light emitting diode (LED) package for emitting light sideward from a light source, the method including steps of: providing a substrate with an electrode formed thereon; disposing a light source on the substrate; forming a molded part on the substrate with the, light source disposed thereon, the molded part having an upper surface with a center thereof depressed concavely; forming a reflection layer for covering an entire upper surface of the molded part; and cutting the substrate, the molded part, and the reflection layer stacked in their order so that a light transmitting surface is formed on a cut section in the side of the molded part with the reflection layer thereon.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 illustrates a side-emitting LED package according to the prior art, in which (a) is a structural view including a lens, and (b) is a block diagram including a planar reflective film;
  • FIG. 2 illustrates another side-emitting LED package according to the prior art, in which (a) is a sectional view illustrating the package with a concave reflecting surface and a reflective layer on an upper surface thereof, and (b) is a sectional view illustrating the package with a funnel-shaped reflecting surface and a reflective layer on a central portion of the reflecting surface;
  • FIG. 3 is a perspective view illustrating a side-emitting LED package according to the present invention, in which (a) is a structure with a circumferential light-transmitting surface and a funnel-shaped reflective layer, (b) is a structure with an angled light-transmitting surface and a funnel-shaped reflective layer, and (c) is a structure with an angled light-transmitting surface and a centrally depressed reflective layer with centrally depressed edges;
  • FIG. 4 is a sectional view illustrating the side-emitting LED package according to the present invention, in which (a) is a structure with a circumferential light-transmitting surface and a funnel-shaped reflective layer, (b) is a structure with an angled light-transmitting surface and a funnel-shaped reflective layer, and (c) is a structure with an angled light-transmitting surface and a centrally depressed reflective layer with centrally depressed edges;
  • FIG. 5 is a side view illustrating a side-emitting LED package according to the present invention, in which (a) is a structure having one LED chip as a light source, and (b) is a structure having a plurality of LEDs as a light source;
  • FIG. 6 is a view illustrating a manufacturing method of the side-emitting LED package having one LED chip as a light source; and
  • FIG. 7 is a view illustrating a manufacturing method of the side-emitting LED package having a plurality of LED chips as a light source.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
  • As shown in FIGS. 3 to 5, a side-emitting LED package 1 according to the present invention is for emitting light sideward from an LED chip as a light source 5 from the side of a molded part 10. The direction of light emission is preferably in parallel with a plane where the LED chip is mounted on.
  • The side-emitting LED package 1 according to the present invention has a substrate 15 with an electrode 15 a formed thereon. The substrate 15 can preferably be a Printed Circuit Board (PCB) or a ceramic substrate with a pattern electrode or a vertical electrode 15 a such as a via.
  • The LED chip 5(see FIG. 4) is mounted on the substrate 15 and electrically connected to the electrode 15 a. The LED chip can be a horizontal type with electric terminals formed on an upper surface thereof and can also be a vertical type with electric terminals formed on upper and lower surfaces thereof.
  • In addition, a molded part 10 is formed on the substrate 15 having the light source 5 disposed thereon. The molded part 10 is made by curing resin, etc., and preferably made of a transparent Epoxy Molding Compound (EMC) layer containing phosphor to minimize color dispersion.
  • In the present invention, a mold (not shown) for forming the molded part 10 can have various shapes to obtain various forms of the molded part. 10. For example, as shown in FIGS. 3(a) and (b), the molded part 10 can have an upper surface with a funnel-shaped center, or as shown in FIG. 3(c), can have an upper surface with a depressed center, and centrally depressed peripheral edges, and protruded edge corners. These shapes of the mold (not shown) for the molded part 10 can be formed by machining the mold in advance according to the desired structure of the molded part 10, as will be described later in a manufacturing method of the package.
  • After forming the molded part 10 in one of the above structures, a reflective layer 20 is formed on the molded part 10, covering the outer surface of the molded part 10. The reflective layer 20 is formed by depositing metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt. Alternatively, the reflective layer 20 can be a thin film directly attached on an upper surface of the molded part 10 or a thin film encapsulating an upper surface of the molded part 10. The reflective layer 20 completely wraps an upper surface of the molded part 10 to prevent light from leaking upward therethrough, so that the side of the molded part 10 forms a light-transmitting surface 17.
  • The light-transmitting surface 17 is preferably formed substantially perpendicular to a plane of the substrate 15 on which the LED chip mounted the light source 5. In addition, as shown in FIGS. 3 and 4, the light-transmitting surface 17 may be a circumferential surface or an angled surface having a polygonal edge shape.
  • Preferably, the reflective layer 20, the molded part 10 and the substrate 15 have the same edge shape so that the reflective layer 20 completely covers the upper surface of the molded part 10 to prevent light from leaking upward therethrough.
  • In addition, the side-emitting LED package 1 according to the present invention may have a light source composed of one LED chip disposed inside the molded part 10 as shown in FIG. 5(a), or a plurality of LED chips disposed inside the molded part 10 as shown in FIG. 5(b).
  • Now, a manufacturing method of the side-emitting LED package according to the present invention will be explained in detail hereinafter.
  • As shown in FIG. 6, in the manufacturing method 100 of the side-emitting LED package of the present invention, one LED chip needs to be prepared to be disposed 5 inside one molded part 10 having a reflective layer 20 thereon, forming a light source.
  • The manufacturing method 100 of the side-emitting LED package according to the present invention starts with a step 102 of providing a substrate 15 with electrodes 15 a formed thereon. The substrate 15 may be a PCB or a ceramic substrate with vertical electrodes such as a via and pattern electrodes 15 a formed thereon, and in either case, vias are formed as a vertical electrode in areas where the LED chips are mounted as a light source 5.
  • The next step 104 is disposing a light source 5 on the substrate 15.
  • More specifically, in this step 104, a plurality of LED chips are mounted on one substrate 15 to form a plurality of light sources 5 for a plurality of unit packages, and each of the light sources 5 are electrically connected to each of the electrodes 15 a of the substrate 15.
  • In the next step 106, a molded part 10 is formed on the substrate 15 having the above described light source 5 disposed thereon. In this step 106, the molded part 10 preferably contains phosphor and is formed by transparent Epoxy Molding Compound (EMC) transfer molding to minimize color dispersion after it is cured.
  • In addition, as described with reference to FIG. 3, the molded part 10 can be formed with a mold (not shown) which may be in various forms such as having an upper surface with a funnel-shaped center, or having an upper surface with a depressed center and centrally depressed peripheral edges.
  • In the next step 108, metal having high reflectivity, for example, selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt is deposited on an outer surface of the molded part 10, or a separate thin film having a high reflectivity is attached on or encapsulates the molded part 10. With the molded part 10 formed as just described, in the next step 110, the substrate 15, the molded part 10, and the reflective layer 20 stacked in their order are cut.
  • The above cutting step 110 may adopt dicing, breaking, or laser cutting depending on the desired structure of the side-emitting LED package.
  • That is, for a side-emitting LED package 1 having a rectangular edge-shaped light transmitting surface 17, the substrate 15, the molded part 10, and the reflective layer 20 are diced or broken to be separated into individual side-emitting LED package 1 in the step 110.
  • Alternatively, the substrate 15, the molded part 10 and the reflective layer 20 may be laser-machined to obtain a side-emitting LED package 1 having circumferential-edge light-transmitting surfaces 17.
  • The substrate 15, the molded part 10 and the reflective layer 20 are cut as just described to obtain the side-emitting LED package 1 having one LED chip mounted therein for the light source 5 in step 112.
  • The side-emitting LED package manufactured as described has the reflective layer 20 completely covering an upper surface of the molded part 20, thereby preventing light, emitted from the LED chip which is the light source 5, from being scattered through the upper part thereof and effectively reflecting light sideward from the side of the package.
  • In addition, the substrate 15, the molded part 10 and the reflective layer 20 can be easily mass-produced by a process of manufacturing a PCB with increased productivity. Moreover, with the molded part 10 minimizing color dispersion the side-emitting LED package 1 has superior emission capabilities.
  • FIG. 7 illustrates step-by-step another manufacturing method 150 of a side-emitting LED package according to the present invention, in which a plurality of LED chips are disposed as a light source inside one molded part 10 having a reflective layer 20 thereon.
  • The manufacturing method of the side-emitting LED package starts with a step 152 of providing a substrate 15 with electrodes 15 a formed thereon as explained herein with reference to FIG. 6.
  • In an area on the substrate 15 where the LED chips for the light source 5 are mounted on, the electrodes 15 a are formed and a plurality of vias are formed to function as vertical electrodes.
  • The next step 154 is disposing a plurality of LED chips on the substrate 15 for the light source, and electrically connecting each of the LED chips to each of the electrodes 15 a using wires.
  • In the next step 156, a molded part 10 is formed on the substrate 15 with the light sources disposed thereon, in which the molded part 10 is formed by transparent Epoxy Molding Compound (EMC) transfer molding.
  • In the next step 158, as explained herein with reference to FIG. 6, metal having a high reflectivity, for example, selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt is deposited on an outer surface of the molded part 10, or a thin film having a high reflectivity is attached on or encapsulates the molded part 10.
  • In the last step 160, the substrate 15, the molded art 10 and the reflective layer 20 are cut to form light-transmitting surfaces 17 on cut sections.
  • The substrate 15, the molded part 10 and the reflective layer 20 are cut as just described to obtain a plurality of side-emitting LED packages 1 having a plurality of LED chips for the light source 5 therein in the step 162.
  • The side-emitting LED package 1 manufactured as just described has the reflective layer 20 completely covering an upper part of the molded part 10, preventing light emitted from the light source 5 from being scattered upward of the reflective layer 20, thereby effectively reflecting light sideward through the light-transmitting surface 17.
  • In addition, the substrate 15, the molded part 10 and the reflective layer 20 can be mass-produced by a PCB manufacturing process, with increased productivity. Moreover, with the molded part 10 minimizing color dispersion and a plurality of LED chips used for the light source, the side-emitting LED package 1 has superior emission capabilities.
  • In addition, the present invention can obtain white light by mounting a red LED chip, a green LED chip and a blue LED chip for the light source 5.
  • Furthermore, a Zener diode can also be mounted in the package.
  • In the present invention as set forth above, a molded part can be formed without being restricted in shapes, thereby enabling a compact thin package. Further, a light-transmitting surface is formed substantially perpendicular to a plane where a LED chip is mounted on, and thus the package can be manufactured in a small thickness regardless of the size of the LED chip.
  • In addition, the substrate is processed in the same fashion as a PCB, that is, the manufacturing process from mounting an LED chip to forming a molded part and cutting the stacked structure afterwards is proceeded in the same fashion as a manufacturing process of a PCB, enabling mass production and an LED array inside the package.
  • Moreover, in the present invention, a mold (not shown) for forming a molded part can have various forms to realize various structures of the molded part, which thus allows obtaining a reflective layer on the molded part in a desired form.
  • Furthermore, according to the present invention, the molded part contains phosphor and is formed by transparent Epoxy Molding Compound (EMC) transfer molding, thereby minimizing color dispersion after it is cured, and thus significantly enhancing the optical properties of the package.
  • The present invention has been described with reference to a preferred embodiments but the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, While the present invention has been shown and described in connection with the preferred embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (12)

1. A light emitting diode (LED) package for emitting light sideward from a light source comprising:
a substrate with an electrode formed thereon;
a light source disposed on the substrate and electrically connected to the electrode;
a molded part having an upper surface with a center thereof depressed concavely, the molded part covering and protecting the substrate and the light source; and
a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface.
2. The LED package according to claim 1, wherein the reflection layer is formed by depositing metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti, and Pt.
3. The LED package according to claim 1, wherein the reflection layer is formed by attaching a thin film having a high reflectivity on the molded part.
4. The LED package according to claim 1, wherein the light source comprises at least one LED chip disposed the molded part.
5. The LED package according to claim 1, wherein the substrate is made of a printed circuit board or ceramic substrate with the electrode formed thereon.
6. The LED package according to claim 1, wherein the reflection layer prevents light from leaking upward therethrough.
7. A method of manufacturing a light emitting diode (LED) package for emitting light sideward from a light source, the method comprising steps of:
providing a substrate with an electrode formed thereon;
disposing a light source on the substrate;
forming a molded part on the substrate with the light source disposed thereon, the molded part having an upper surface with a center thereof depressed concavely;
forming a reflection layer for- covering an entire upper surface of the molded part; and
cutting the substrate, the molded part, and the reflection layer stacked in their order so that a light transmitting surface is formed on a cut section in the side of the molded part with the reflection layer thereon.
8. The method according to claim 7, wherein the molded part contains phosphor and is formed by transparent Epoxy Molding Compound (EMC) transfer molding.
9. The method according to claim 7, wherein the step of forming a reflection layer comprises depositing metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti, and Pt.
10. The method according to claim 7, wherein the step of forming a reflection layer comprises attaching a thin film having a high reflectivity on the molded part.
11. The method according to claim 7, wherein the step of cutting comprises cutting the reflection layer and the substrate such that they have the same edge shape as the molded part.
12. The method according to claim 7, wherein the step of forming a light transmitting surface comprises cutting the substrate, the molded part and the reflection layer in a direction that intersects a plane where the LED chip is disposed on.
US11/444,402 2005-06-01 2006-06-01 Side-emitting LED package and method of manufacturing the same Abandoned US20060273337A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060274547A1 (en) * 2005-01-06 2006-12-07 Au Optronics Corp. Backlight module and illumination device thereof
US20070222361A1 (en) * 2006-02-20 2007-09-27 Nichia Corporation Light emitting device
US20090242919A1 (en) * 2008-03-27 2009-10-01 Industrial Technology Research Institute Light emitting device
US20100014281A1 (en) * 2008-07-17 2010-01-21 Yong Suk Kim Light emitting device package and backlight unit and liquid crystal display device using the same
US20100091498A1 (en) * 2008-10-10 2010-04-15 Koninklijke Philips Electronics N.V. Low profile side emission tir lens for led
US20100220484A1 (en) * 2008-07-10 2010-09-02 Oree Inc. Slim waveguide coupling apparatus and method
US20100246626A1 (en) * 2007-10-16 2010-09-30 Koninklijke Philips Electronics N.V. Side-emitting led light source for backlighting applications
US20100309407A1 (en) * 2009-06-05 2010-12-09 Takashi Shimura Planar light-emitting device and liquid crystal display apparatus
US20110089453A1 (en) * 2009-10-15 2011-04-21 Min Bong Kul Light emitting apparatus
US20110100707A1 (en) * 2008-02-29 2011-05-05 Osram Opto Semiconductors Gmbh Miniature Housing and Support Arrangement Having at Least One Miniature Housing
US8064743B2 (en) 2007-12-19 2011-11-22 Oree, Inc. Discrete light guide-based planar illumination area
US8128272B2 (en) 2005-06-07 2012-03-06 Oree, Inc. Illumination apparatus
US8182128B2 (en) 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
US8231237B2 (en) 2008-03-05 2012-07-31 Oree, Inc. Sub-assembly and methods for forming the same
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8283686B2 (en) 2007-12-11 2012-10-09 Koninklijke Philips Electronics N.V. Side emitting device with hybrid top reflector
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8328406B2 (en) 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
US8471281B2 (en) 2007-12-11 2013-06-25 Koninklijke Philips Electronics N.V. Side emitting device with hybrid top reflector
CN103311399A (en) * 2012-03-15 2013-09-18 展晶科技(深圳)有限公司 LED (Light-Emitting Diode) luminescent device
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
WO2015017091A1 (en) * 2013-08-01 2015-02-05 Cree, Inc. Light emitting diode package with encapsulant having curved and planar surfaces
US9048396B2 (en) 2012-06-11 2015-06-02 Cree, Inc. LED package with encapsulant having planar surfaces
US20150176807A1 (en) * 2010-04-30 2015-06-25 Samsung Electronics Co., Ltd. Light emitting device package, light source module, backlight unit, display apparatus, television set, and illumination apparatus
US20160109096A1 (en) * 2014-10-17 2016-04-21 Samsung Electronics Co., Ltd. Light emitting device package and lighting device having the same
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US9461024B2 (en) 2013-08-01 2016-10-04 Cree, Inc. Light emitter devices and methods for light emitting diode (LED) chips
EP2733415A3 (en) * 2012-11-15 2017-10-18 Boe Technology Group Co. Ltd. Liquid guide plate, backlight module and display device
US9857519B2 (en) 2012-07-03 2018-01-02 Oree Advanced Illumination Solutions Ltd. Planar remote phosphor illumination apparatus
US9887327B2 (en) 2012-06-11 2018-02-06 Cree, Inc. LED package with encapsulant having curved and planar surfaces
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5108297B2 (en) * 2005-12-27 2012-12-26 昭和電工株式会社 Emitting element mounting package, a surface light source device and a display device
EP2126986A4 (en) * 2006-12-22 2012-10-10 Qunano Ab Led with upstanding nanowire structure and method of producing such
KR101309762B1 (en) * 2007-03-29 2013-09-23 서울반도체 주식회사 Led package with downwardly relfective surface
KR101322454B1 (en) * 2007-03-30 2013-10-25 서울반도체 주식회사 Light emitting diode package
EP2212928B1 (en) * 2007-11-20 2016-06-29 Koninklijke Philips N.V. Side emitting device with wavelength conversion
WO2009093497A1 (en) * 2008-01-22 2009-07-30 Alps Electric Co., Ltd. Led package using light reflector
TW200945633A (en) * 2008-02-27 2009-11-01 Alps Electric Co Ltd Light emitter and semiconductor light-emitting device using same
JP5187749B2 (en) * 2008-07-02 2013-04-24 Necライティング株式会社 The light-emitting device
JP2010045248A (en) * 2008-08-14 2010-02-25 Citizen Electronics Co Ltd Light-emitting diode
KR20100112978A (en) * 2009-04-10 2010-10-20 김덕용 Led lighting apparatus and method for surface emitting of the led lighting apparatus
US8922106B2 (en) * 2009-06-02 2014-12-30 Bridgelux, Inc. Light source with optics to produce a spherical emission pattern
EP2270882A1 (en) * 2009-06-30 2011-01-05 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
KR101615497B1 (en) * 2009-11-27 2016-04-27 삼성전자주식회사 Light Emitting Diode Package and Method of Manufacturing The Same
DE102010032041A1 (en) 2010-07-23 2012-01-26 Osram Opto Semiconductors Gmbh The radiation-emitting device and method for the preparation of radiation-emitting Bauelemnenten
US9004724B2 (en) * 2011-03-21 2015-04-14 GE Lighting Solutions, LLC Reflector (optics) used in LED deco lamp
JP2013110179A (en) * 2011-11-18 2013-06-06 Citizen Holdings Co Ltd Semiconductor light-emitting device
JP2013115088A (en) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd Semiconductor light-emitting device
US8796052B2 (en) 2012-02-24 2014-08-05 Intersil Americas LLC Optoelectronic apparatuses with post-molded reflector cups and methods for manufacturing the same
JP2012227537A (en) * 2012-06-19 2012-11-15 Mitsubishi Electric Corp Led light source and luminous body using the same
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
TW201500776A (en) * 2013-06-28 2015-01-01 Hon Hai Prec Ind Co Ltd Lens and light source module with the same
JP6273124B2 (en) 2013-11-08 2018-01-31 シチズン電子株式会社 Led lighting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173575A1 (en) * 2000-02-15 2003-09-18 Dominik Eisert Radiation emitting semiconductor device
US6674096B2 (en) * 2001-06-08 2004-01-06 Gelcore Llc Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution
US20040223315A1 (en) * 2003-03-03 2004-11-11 Toyoda Gosei Co., Ltd. Light emitting apparatus and method of making same
US20060119250A1 (en) * 2001-11-16 2006-06-08 Yoshinobu Suehiro Light-emitting diode, led light, and light apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1082916A (en) 1996-09-06 1998-03-31 Omron Corp Surface light source device and liquid crystal display device
JP3868675B2 (en) * 1999-08-19 2007-01-17 ローム株式会社 The method of manufacturing a semiconductor light emitting device
JP4082544B2 (en) * 1999-12-24 2008-04-30 ローム株式会社 Back surface mounting chip type light emitting device
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light-emitting diode, manufacturing method therefor and illumination device
WO2001082386A1 (en) * 2000-04-24 2001-11-01 Rohm Co., Ltd. Edge-emitting light-emitting semiconductor device and method of manufacture thereof
TW459403B (en) * 2000-07-28 2001-10-11 Lee Jeong Hoon White light-emitting diode
US6598998B2 (en) * 2001-05-04 2003-07-29 Lumileds Lighting, U.S., Llc Side emitting light emitting device
US6989412B2 (en) * 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
JP4239563B2 (en) * 2001-11-16 2009-03-18 豊田合成株式会社 Light emitting diode and led lights
JP2003158302A (en) * 2001-11-21 2003-05-30 Toyoda Gosei Co Ltd Light emitting diode
JP3715635B2 (en) * 2002-08-21 2005-11-09 日本ライツ株式会社 Light source and the light guide member and a plane light emitting device
JP2004266124A (en) * 2003-03-03 2004-09-24 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
TWI324829B (en) * 2004-02-06 2010-05-11 Advanced Semiconductor Eng Optical semiconductor package and method for manufacturing the same
KR20050082487A (en) * 2004-02-19 2005-08-24 삼성전자주식회사 Surface light source device and display device having the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173575A1 (en) * 2000-02-15 2003-09-18 Dominik Eisert Radiation emitting semiconductor device
US6674096B2 (en) * 2001-06-08 2004-01-06 Gelcore Llc Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution
US20060119250A1 (en) * 2001-11-16 2006-06-08 Yoshinobu Suehiro Light-emitting diode, led light, and light apparatus
US20040223315A1 (en) * 2003-03-03 2004-11-11 Toyoda Gosei Co., Ltd. Light emitting apparatus and method of making same

Cited By (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060274547A1 (en) * 2005-01-06 2006-12-07 Au Optronics Corp. Backlight module and illumination device thereof
US7470046B2 (en) * 2005-01-06 2008-12-30 Au Optronics Corp. Backlight module and illumination device thereof
US8414174B2 (en) 2005-06-07 2013-04-09 Oree, Inc. Illumination apparatus
US8641254B2 (en) 2005-06-07 2014-02-04 Oree, Inc. Illumination apparatus
US8579466B2 (en) 2005-06-07 2013-11-12 Oree, Inc. Illumination apparatus and methods of forming the same
US8128272B2 (en) 2005-06-07 2012-03-06 Oree, Inc. Illumination apparatus
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8523384B2 (en) * 2006-02-20 2013-09-03 Nichia Corporation Light emitting device
US7775687B2 (en) * 2006-02-20 2010-08-17 Nichia Corporation Light emitting device
US20070222361A1 (en) * 2006-02-20 2007-09-27 Nichia Corporation Light emitting device
US20100270906A1 (en) * 2006-02-20 2010-10-28 Masami Nishi Light emitting device
US8121166B2 (en) 2007-10-16 2012-02-21 Koninklijke Philips Electronics N.V. Side-emitting LED light source for backlighting applications
US20100246626A1 (en) * 2007-10-16 2010-09-30 Koninklijke Philips Electronics N.V. Side-emitting led light source for backlighting applications
US8471281B2 (en) 2007-12-11 2013-06-25 Koninklijke Philips Electronics N.V. Side emitting device with hybrid top reflector
US8283686B2 (en) 2007-12-11 2012-10-09 Koninklijke Philips Electronics N.V. Side emitting device with hybrid top reflector
US8459856B2 (en) 2007-12-19 2013-06-11 Oree, Inc. Planar white illumination apparatus
US8238703B2 (en) 2007-12-19 2012-08-07 Oree Inc. Waveguide sheet containing in-coupling, propagation, and out-coupling regions
US8182128B2 (en) 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
US8064743B2 (en) 2007-12-19 2011-11-22 Oree, Inc. Discrete light guide-based planar illumination area
US8550684B2 (en) 2007-12-19 2013-10-08 Oree, Inc. Waveguide-based packaging structures and methods for discrete lighting elements
US8172447B2 (en) 2007-12-19 2012-05-08 Oree, Inc. Discrete lighting elements and planar assembly thereof
US8542964B2 (en) * 2007-12-19 2013-09-24 Oree, Inc. Waveguide sheet containing in-coupling, propagation, and out-coupling regions
US20110100707A1 (en) * 2008-02-29 2011-05-05 Osram Opto Semiconductors Gmbh Miniature Housing and Support Arrangement Having at Least One Miniature Housing
US8633408B2 (en) 2008-02-29 2014-01-21 Osram Opto Semiconductors Gmbh Miniature housing and support arrangement having at least one miniature housing
US8231237B2 (en) 2008-03-05 2012-07-31 Oree, Inc. Sub-assembly and methods for forming the same
US20090242919A1 (en) * 2008-03-27 2009-10-01 Industrial Technology Research Institute Light emitting device
TWI387135B (en) * 2008-03-28 2013-02-21 Ind Tech Res Inst Light emitting device and manufacturing method thereof
US8227827B2 (en) 2008-03-28 2012-07-24 Industrial Technology Research Institute Light emitting device
US20110057225A1 (en) * 2008-03-28 2011-03-10 Industrial Technology Research Institute Light Emitting Device
US7872273B2 (en) 2008-03-28 2011-01-18 Industrial Technology Research Institute Light emitting device
US20100220484A1 (en) * 2008-07-10 2010-09-02 Oree Inc. Slim waveguide coupling apparatus and method
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8297786B2 (en) * 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US9164218B2 (en) 2008-07-10 2015-10-20 Oree, Inc. Slim waveguide coupling apparatus and method
US20100014281A1 (en) * 2008-07-17 2010-01-21 Yong Suk Kim Light emitting device package and backlight unit and liquid crystal display device using the same
US7909486B2 (en) * 2008-07-17 2011-03-22 Lg Electronics Inc. Light emitting device package and backlight unit and liquid crystal display device using the same
US20100091498A1 (en) * 2008-10-10 2010-04-15 Koninklijke Philips Electronics N.V. Low profile side emission tir lens for led
US7837370B2 (en) * 2008-10-10 2010-11-23 Koninklijke Philips Electronics N.V. Low profile side emission TIR lens for LED
US8328406B2 (en) 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
US8379166B2 (en) 2009-06-05 2013-02-19 Citizen Electronics Co., Ltd. Planar light-emitting device and liquid crystal display apparatus
US20100309407A1 (en) * 2009-06-05 2010-12-09 Takashi Shimura Planar light-emitting device and liquid crystal display apparatus
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
US9683715B2 (en) 2009-10-15 2017-06-20 Lg Innotek Co., Ltd. Light emitting apparatus
US8946743B2 (en) 2009-10-15 2015-02-03 Lg Innotek Co., Ltd. Light emitting apparatus
US20110089453A1 (en) * 2009-10-15 2011-04-21 Min Bong Kul Light emitting apparatus
CN102088054A (en) * 2009-10-15 2011-06-08 Lg伊诺特有限公司 Light emitting apparatus
EP2312659A3 (en) * 2009-10-15 2011-06-29 LG Innotek Co., Ltd. Light emitting apparatus
US20150176807A1 (en) * 2010-04-30 2015-06-25 Samsung Electronics Co., Ltd. Light emitting device package, light source module, backlight unit, display apparatus, television set, and illumination apparatus
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
US9385287B2 (en) * 2011-05-24 2016-07-05 Epistar Corporation Batwing LED with remote phosphor configuration
US8840276B2 (en) 2011-11-16 2014-09-23 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US9039244B2 (en) 2011-11-16 2015-05-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
CN103311399A (en) * 2012-03-15 2013-09-18 展晶科技(深圳)有限公司 LED (Light-Emitting Diode) luminescent device
US9865780B2 (en) 2012-06-11 2018-01-09 Cree, Inc. LED package with encapsulant having planar surfaces
US9048396B2 (en) 2012-06-11 2015-06-02 Cree, Inc. LED package with encapsulant having planar surfaces
US9818919B2 (en) 2012-06-11 2017-11-14 Cree, Inc. LED package with multiple element light source and encapsulant having planar surfaces
US9887327B2 (en) 2012-06-11 2018-02-06 Cree, Inc. LED package with encapsulant having curved and planar surfaces
US9857519B2 (en) 2012-07-03 2018-01-02 Oree Advanced Illumination Solutions Ltd. Planar remote phosphor illumination apparatus
EP2733415A3 (en) * 2012-11-15 2017-10-18 Boe Technology Group Co. Ltd. Liquid guide plate, backlight module and display device
WO2015017091A1 (en) * 2013-08-01 2015-02-05 Cree, Inc. Light emitting diode package with encapsulant having curved and planar surfaces
US9461024B2 (en) 2013-08-01 2016-10-04 Cree, Inc. Light emitter devices and methods for light emitting diode (LED) chips
US20160109096A1 (en) * 2014-10-17 2016-04-21 Samsung Electronics Co., Ltd. Light emitting device package and lighting device having the same
US9897789B2 (en) * 2014-10-17 2018-02-20 Samsung Electronics Co., Ltd. Light emitting device package and lighting device having the same

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KR20060124925A (en) 2006-12-06
US20080254558A1 (en) 2008-10-16

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