JP3868675B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Manufacturing method of semiconductor light emitting device Download PDF

Info

Publication number
JP3868675B2
JP3868675B2 JP23212099A JP23212099A JP3868675B2 JP 3868675 B2 JP3868675 B2 JP 3868675B2 JP 23212099 A JP23212099 A JP 23212099A JP 23212099 A JP23212099 A JP 23212099A JP 3868675 B2 JP3868675 B2 JP 3868675B2
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
reflector
emitting device
emitting chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23212099A
Other languages
Japanese (ja)
Other versions
JP2001057444A (en
Inventor
宏基 石長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP23212099A priority Critical patent/JP3868675B2/en
Publication of JP2001057444A publication Critical patent/JP2001057444A/en
Application granted granted Critical
Publication of JP3868675B2 publication Critical patent/JP3868675B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、側面を発光させるように構成した半導体発光装置の製造方法に関する。
【０００２】
【従来の技術】
半導体発光装置は、一般的には発光面を実装基板に対して垂直方向に設定して実装されている。しかしながら、サイドビュ−形の表示装置等においては、半導体発光装置の発光面を実装基板に対して水平方向に設定することが必要になる場合がある。このような場合には、側面発光型の半導体発光装置が使用される。
【０００３】
図４は、上記のような側面発光型の半導体発光装置の一例を一部透視して示す斜視図である。図４において、半導体発光装置１は、基板２の表面に一対のリ−ド電極パタ−ン３、４を形成し、一方のリ−ド電極パタ−ン４の上面に半導体発光チップ５を搭載する。半導体発光チップ５は、他方のリ−ド電極パタ−ン３と金属線６にてワイヤ−ボンデングされる。
【０００４】
一対のリ−ド電極パタ−ン３、４、半導体発光チップ５、金属線６を不透光性の合成樹脂で形成されるリフレクタケ−ス８により覆う。このリフレクタケ−ス８には、一方の側面に開口部が設けられており、開口部内に透光性の合成樹脂７を充填する。半導体発光チップ５、金属線６は透光性の合成樹脂７により封止される。
【０００５】
図示しない接続端子から一対のリ−ド電極パタ−ン３、４に通電すると、半導体発光チップ５から出力光を発光する。この際の出力光は、背面および上部でリフレクタケ−ス８により反射され、透光性の合成樹脂７の端面、すなわち、半導体発光装置１の側面から実装基板と平行な矢視Ａ方向に発射される。
【０００６】
図５は、図４のような側面発光型の半導体発光装置１を多数連結した状態を示す断面図である。図５において、発光面が同一方向となるように基板２に一対のリ−ド電極パタ−ン３、４を形成し、一方のリ−ド電極パタ−ン４上に半導体発光チップ５を搭載し、他方のリ−ド電極パタ−ン３と金属線６にてワイヤ−ボンデングする。
【０００７】
次に、前記したようなリフレクタケ−ス８を同じ向きにして配置し、透光性の合成樹脂７を充填して、複数個連結した側面発光型の半導体発光装置１を形成する。続いて、透光性の合成樹脂７がリフレクタケ−ス８と接する矢視Ｘ１〜Ｘ４・・・の位置でレ−ザ等の適宜の手段により切断する。
【０００８】
従来においては、多数連結された半導体発光装置を透光性の合成樹脂がリフレクタケ−スと接する位置でそれぞれ切断して、個別の側面発光型の半導体発光装置が形成されていた。このため、切断位置がずれてリフレクタケ−ス８側に切断面が形成されてしまうと、図６の斜視図に示すように、半導体発光装置１の側面にリフレクタケ−スの残部８ａが付着する。
【０００９】
【発明が解決しようとする課題】
このように、半導体発光装置１の側面にリフレクタケ−スの残部８ａが付着する場合には、半導体発光装置１の出力光が側面から有効に発射されないという問題があった。
【００１０】
本発明はこのような問題に鑑みてなされたものであり、出力光が側面から有効に発射されるような半導体発光装置の製造方法の提供を目的とする。
【００１１】
【課題を解決するための手段】
本発明の上記目的は、半導体発光装置の製造方法を、側面に形成される発光面を互いに逆向きにする配置と、該発光面を互いに対向させる配置を交互に繰り返して半導体発光チップを基板に搭載する工程と、
断面形状が上部は平坦で下方両側にくびれを有する橋脚形状のリフレクタケースの複数を、上部間で間隔を隔てて枠体に配列固定する工程と
リフレクタケースを配列固定した枠体を、前記半導体発光チップを搭載した基板に、リフレクタケースの橋脚の下端を、発光面を互いに逆向きに配置した半導体発光チップ間に位置させ、リフレクタケースの各くびれ内に半導体発光チップを収納して載置する工程と、
リフレクタケースを配列固定した枠体を、半導体発光チップを搭載した基板に載置した後、前記間隔から透光性の樹脂を充填して前記各くびれに収納された半導体発光チップを封止する工程と、
透光性の樹脂を充填した後、リフレクタケースの橋脚部およびリフレクタケース間の間隔部を切断して個別の半導体発光装置を形成する工程で構成することにより達成される。
【００１２】
このように、本発明においては、半導体発光チップを搭載した基板に載置したリフレクタケースで囲まれる空間に半導体発光チップの発光面を対向配置し、リフレクタケース間の上部間隙から透光性の樹脂を充填し、リフレクタケースの部分と透光性の樹脂の部分で切断して個別の半導体発光装置を形成している。このため、半導体発光装置の光を発射する側面にリフレクタケースの残部が付着することなく、出力光を側面から効果的に発射することができる。
【００１３】
【発明の実施の形態】
以下、本発明の実施の形態について図を参照して説明する。図２は本発明の実施の形態に係る半導体発光装置の製造に用いるリフレクタケ−スの配置を示す平面図、図１は図２の矢視Ｂ−Ｂ方向でみた概略の断面図である。図２において、平面視矩形状の枠体２０には複数のリフレクタケ−ス１８ａ〜１８ｆが配置されている。
【００１４】
このリフレクタケース１８ａ〜１８ｆは、図１に示すように断面形状が上部は平坦面で下方両側にくびれを有する橋脚形状としており、枠体および各リフレクタケース間には、図示のようなリフレクタケースのくびれ部による空間部Ｄ１、Ｄ２、Ｄ３、Ｄ４・・・が形成されている。また、上部平坦面には、リフレクタケースと枠体間および隣接するリフレクタケース間に形成した間隙（以下、開口部という。）２１ａ、２１ｂ、・・・２１ｇが形成されている。
【００１５】
基板１２に一対のリ−ド電極パタ−ン１３、１４を形成し、一方のリ−ド電極パタ−ン１４の上面に半導体発光チップ１５を搭載する。また、半導体発光チップ１５は、他方のリ−ド電極パタ−ン１３と金属線１６にてワイヤ−ボンデングされる。
【００１６】
このような半導体発光チップを、図１のＣ１のエリアとＣ２のエリアでは発光面を互いに逆向きに、また、Ｃ２のエリアとＣ３のエリアでは発光面を互いに対向させて配置する。以下同様に、発光面を互いに逆向きにする配置と発光面を互いに対向させる配置を交互に繰り返して各半導体発光チップを配置する。
【００１７】
縦方向および横方向にマトリックス状に所定数の半導体発光チップを前記のようにして基板上に搭載した後に、図２の枠体およびリフレクタケ−スを当該基板に載置する。次に、前記開口部２１ａ〜２１ｇから透光性の合成樹脂１７を充填する。このようにして、各半導体発光チップ１５と金属線１６は透光性の合成樹脂１７により封止される。続いて、複数連結されている半導体発光装置を図１のＹ１〜Ｙ４の位置で切断して個別の半導体発光装置１１を形成する。
【００１８】
図３は、図２の枠体２０およびリフレクタケ−ス１８ａ〜１８ｆ間の開口部２１ａ〜２１ｇから透光性の合成樹脂１７を充填した後に、個別の半導体発光装置１１を形成するために、レ−ザ等により切断する際の切断位置を具体的に示す平面図である。
【００１９】
図３において、Ｙａ〜Ｙｊは図示縦方向の切断線で、Ｚａ〜Ｚｇは図示横方向の切断線である。また、Ｙａ、Ｙｊ、Ｚａ、Ｚｇの切断線は枠体２０を除去する切断線である。縦方向の切断線は、透光性の合成樹脂１７が充填された開口部２１ａ〜２１ｇと、リフレクタケ−ス１８ａ〜１８ｆの位置で交互に形成されてる。このように、縦方向および横方向にマトリックス状に切断線を形成することにより、多数の半導体発光装置を迅速に得ることができる。
【００２０】
図１、図３に示すように、本発明においては半導体発光装置の発光面を互いに対向配置して、リフレクタケ−スに充填された透光性の合成樹脂の部分、すなわち発光面となる部分と、リフレクタケ−スの部分で切断して個別の半導体発光装置を形成している。このため、発光面にリフレクタケ−スの残部が付着することがなく、出力光を側面から効果的に発射することができる。
【００２１】
【発明の効果】
以上説明したように本発明の半導体発光装置の製造方法は、半導体発光チップが発する光を出力する出力面側では、リフレクタケースを切断することなく透光性の樹脂の部分を切断するので、半導体発光チップが発する光を出力する出力面に、リフレクタケースの残部や切断粉が付着せず、その残部や切断粉を取り除く作業を省略することができ、その出力面から効果的に光を発射する半導体発光装置の生産性を高めることができる。
【図面の簡単な説明】
【図１】本発明の実施の形態に係る半導体発光装置の製造において、個別の半導体発光装置を得る際の切断位置を示す断面図である。
【図２】本発明の実施の形態に係る半導体発光装置の製造に用いる枠体とリフレクタケ−スの配置を示す平面図である。
【図３】図２の配置に対する切断線を示す平面図である。
【図４】側面発光型の半導体発光装置の一例を示す斜視図である。
【図５】従来例の個別の半導体発光装置を得る際に形成される切断位置を示す断面図である。
【図６】従来例の半導体発光装置の斜視図である。
【符号の説明】
１１ 半導体発光装置
１２ 基板
１３、１４ 一対の電極パタ−ン
１５ 半導体発光チップ
１６ 金属線
１７ 透光性の合成樹脂
１８ａ〜１８ｆ リフレクタケ−ス
２０ 枠体
２１ａ〜２１ｇ 開口部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor light emitting device configured to emit light from a side surface.
[0002]
[Prior art]
In general, a semiconductor light emitting device is mounted with a light emitting surface set in a direction perpendicular to a mounting substrate. However, in a side view type display device or the like, it may be necessary to set the light emitting surface of the semiconductor light emitting device in a horizontal direction with respect to the mounting substrate. In such a case, a side-emitting semiconductor light emitting device is used.
[0003]
FIG. 4 is a perspective view showing a part of an example of the side-emitting semiconductor light-emitting device as described above. In FIG. 4, the semiconductor light emitting device 1 has a pair of lead electrode patterns 3 and 4 formed on the surface of a substrate 2, and a semiconductor light emitting chip 5 is mounted on the upper surface of one of the lead electrode patterns 4. To do. The semiconductor light emitting chip 5 is wire-bonded by the other lead electrode pattern 3 and the metal wire 6.
[0004]
The pair of lead electrode patterns 3 and 4, the semiconductor light emitting chip 5, and the metal wire 6 are covered with a reflector case 8 formed of a non-transparent synthetic resin. The reflector case 8 has an opening on one side surface, and a transparent synthetic resin 7 is filled in the opening. The semiconductor light emitting chip 5 and the metal wire 6 are sealed with a translucent synthetic resin 7.
[0005]
When a pair of lead electrode patterns 3 and 4 are energized from a connection terminal (not shown), output light is emitted from the semiconductor light emitting chip 5. The output light at this time is reflected by the reflector case 8 at the back and top, and is emitted in the direction of arrow A parallel to the mounting substrate from the end face of the translucent synthetic resin 7, that is, the side face of the semiconductor light emitting device 1. The
[0006]
FIG. 5 is a cross-sectional view showing a state in which a large number of side-emitting semiconductor light emitting devices 1 as shown in FIG. 4 are connected. In FIG. 5, a pair of lead electrode patterns 3 and 4 are formed on the substrate 2 so that the light emitting surfaces are in the same direction, and the semiconductor light emitting chip 5 is mounted on one of the lead electrode patterns 4. Then, wire bonding is performed with the other lead electrode pattern 3 and the metal wire 6.
[0007]
Next, the reflector case 8 as described above is arranged in the same direction and filled with a translucent synthetic resin 7 to form a side-emitting semiconductor light-emitting device 1 connected in plural. Subsequently, the translucent synthetic resin 7 is cut by an appropriate means such as a laser at positions X1 to X4... In contact with the reflector case 8.
[0008]
Conventionally, a plurality of connected semiconductor light-emitting devices are cut at positions where a light-transmitting synthetic resin is in contact with the reflector case to form individual side-emitting semiconductor light-emitting devices. Therefore, if the cutting position is shifted and a cut surface is formed on the reflector case 8 side, the remaining portion 8a of the reflector case adheres to the side surface of the semiconductor light emitting device 1 as shown in the perspective view of FIG.
[0009]
[Problems to be solved by the invention]
As described above, when the remaining portion 8a of the reflector case adheres to the side surface of the semiconductor light emitting device 1, the output light of the semiconductor light emitting device 1 is not effectively emitted from the side surface.
[0010]
The present invention has been made in view of such problems, and an object of the present invention is to provide a method for manufacturing a semiconductor light emitting device in which output light is effectively emitted from the side.
[0011]
[Means for Solving the Problems]
An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, in which a semiconductor light emitting chip is mounted on a substrate by alternately repeating an arrangement in which light emitting surfaces formed on side surfaces are opposite to each other and an arrangement in which the light emitting surfaces are opposed to each other. Mounting process,
A step of arranging and fixing a plurality of pier-shaped reflector cases having a flat cross-sectional shape and constrictions on both lower sides to a frame with an interval between the upper portions;
The frame with the reflector case arranged and fixed is positioned on the substrate on which the semiconductor light emitting chip is mounted, and the lower end of the pier of the reflector case is positioned between the semiconductor light emitting chips with the light emitting surfaces arranged in opposite directions. Storing and mounting the semiconductor light emitting chip in the interior ;
The step of sealing the semiconductor light emitting chip housed in each of the constrictions by filling the frame with the reflector case arranged and fixed on the substrate on which the semiconductor light emitting chip is mounted, and then filling the transparent resin from the interval. And
This is achieved by filling the translucent resin and then cutting the gap between the reflector pier and the reflector case to form individual semiconductor light emitting devices.
[0012]
As described above, in the present invention, the light emitting surface of the semiconductor light emitting chip is disposed opposite to the space surrounded by the reflector case mounted on the substrate on which the semiconductor light emitting chip is mounted, and the translucent resin is transmitted from the upper gap between the reflector cases. And is cut at the reflector case portion and the translucent resin portion to form individual semiconductor light emitting devices . For this reason, output light can be effectively emitted from the side surface without the remaining portion of the reflector case adhering to the side surface of the semiconductor light emitting device that emits light .
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 2 is a plan view showing the arrangement of reflector cases used in the manufacture of the semiconductor light emitting device according to the embodiment of the present invention, and FIG. 1 is a schematic sectional view as seen in the direction of arrows BB in FIG. In FIG. 2, a plurality of reflector cases 18 a to 18 f are arranged on a frame 20 having a rectangular shape in plan view.
[0014]
As shown in FIG. 1, each of the reflector cases 18a to 18f is a bridge pier having a flat upper portion and constricted on both lower sides, and a reflector case as shown in the figure is interposed between the frame and each reflector case. Spaces D1 , D2, D3, D4... Are formed by the constricted part . Further, gaps (hereinafter referred to as openings) 21a, 21b,... 21g formed between the reflector case and the frame and between adjacent reflector cases are formed on the upper flat surface.
[0015]
A pair of lead electrode patterns 13 and 14 is formed on the substrate 12, and a semiconductor light emitting chip 15 is mounted on the upper surface of one of the lead electrode patterns 14. The semiconductor light emitting chip 15 is wire-bonded with the other lead electrode pattern 13 and the metal wire 16.
[0016]
Such semiconductor light emitting chips are arranged with the light emitting surfaces opposite to each other in the area C1 and the area C2 in FIG. 1, and with the light emitting surfaces facing each other in the areas C2 and C3. Similarly, the semiconductor light emitting chips are arranged by alternately repeating the arrangement in which the light emitting surfaces are opposite to each other and the arrangement in which the light emitting surfaces are opposed to each other.
[0017]
After a predetermined number of semiconductor light emitting chips are mounted on the substrate in a matrix form in the vertical direction and the horizontal direction, the frame body and reflector case of FIG. 2 are mounted on the substrate. Next, the translucent synthetic resin 17 is filled from the openings 21a to 21g. In this way, each semiconductor light emitting chip 15 and the metal wire 16 are sealed with the translucent synthetic resin 17. Subsequently, a plurality of connected semiconductor light emitting devices are cut at positions Y1 to Y4 in FIG. 1 to form individual semiconductor light emitting devices 11.
[0018]
FIG. 3 shows a structure for forming individual semiconductor light emitting devices 11 after filling translucent synthetic resin 17 through openings 21a-21g between frame body 20 and reflector cases 18a-18f in FIG. -It is a top view which shows concretely the cutting position at the time of cut | disconnecting with the zipper.
[0019]
In FIG. 3, Ya to Yj are cutting lines in the illustrated vertical direction, and Za to Zg are cutting lines in the illustrated horizontal direction. The cutting lines for Ya, Yj, Za, and Zg are cutting lines for removing the frame body 20. The longitudinal cutting lines are alternately formed at the positions of the openings 21a to 21g filled with the translucent synthetic resin 17 and the reflector cases 18a to 18f. In this way, by forming the cutting lines in a matrix in the vertical direction and the horizontal direction, a large number of semiconductor light emitting devices can be obtained quickly.
[0020]
As shown in FIGS. 1 and 3, in the present invention, the light emitting surfaces of the semiconductor light emitting device are arranged to face each other, and the portion of the translucent synthetic resin filled in the reflector case, that is, the portion that becomes the light emitting surface, Each of the reflector cases is cut to form individual semiconductor light emitting devices. For this reason, the remainder of the reflector case does not adhere to the light emitting surface, and the output light can be effectively emitted from the side surface.
[0021]
【The invention's effect】
Above manufacturing method of the semiconductor light-emitting device of the present invention, as described, in the output side for outputting a light semiconductor light emitting chip is emitted, since the cut part of the translucent resin without cutting the reflector casing, the semiconductor The remainder of the reflector case and cutting powder do not adhere to the output surface that outputs the light emitted by the light emitting chip, and the work of removing the remaining portion and cutting powder can be omitted , and light is effectively emitted from the output surface. The productivity of the semiconductor light emitting device can be increased.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a cutting position when an individual semiconductor light emitting device is obtained in manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a plan view showing an arrangement of a frame and a reflector case used for manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 3 is a plan view showing a cutting line for the arrangement of FIG. 2;
FIG. 4 is a perspective view showing an example of a side-emitting type semiconductor light emitting device.
FIG. 5 is a cross-sectional view showing a cutting position formed when an individual semiconductor light emitting device of a conventional example is obtained.
FIG. 6 is a perspective view of a conventional semiconductor light emitting device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 Semiconductor light-emitting device 12 Board | substrates 13 and 14 A pair of electrode pattern 15 Semiconductor light-emitting chip 16 Metal wire 17 Translucent synthetic resin 18a-18f Reflector case 20 Frame 21a-21g Opening

Claims (1)

側面に形成される発光面を互いに逆向きにする配置と、該発光面を互いに対向させる配置を交互に繰り返して半導体発光チップを基板に搭載する工程と、
断面形状が上部は平坦で下方両側にくびれを有する橋脚形状のリフレクタケースの複数を、上部間で間隔を隔てて枠体に配列固定する工程と
リフレクタケースを配列固定した枠体を、前記半導体発光チップを搭載した基板に、リフレクタケースの橋脚の下端を、発光面を互いに逆向きに配置した半導体発光チップ間に位置させ、リフレクタケースの各くびれ内に半導体発光チップを収納して載置する工程と、
リフレクタケースを配列固定した枠体を、半導体発光チップを搭載した基板に載置した後、前記間隔から透光性の樹脂を充填して前記各くびれ内に収納された半導体発光チップを封止する工程と、
透光性の樹脂を充填した後、リフレクタケースの橋脚部およびリフレクタケース間の間隔部を切断して個別の半導体発光装置を形成する工程と、
からなることを特徴とする半導体発光装置の製造方法。Mounting the semiconductor light emitting chip on the substrate by alternately repeating the arrangement in which the light emitting surfaces formed on the side surfaces are opposite to each other and the arrangement in which the light emitting surfaces are opposed to each other;
A step of arranging and fixing a plurality of pier-shaped reflector cases having a flat cross-sectional shape and constrictions on both lower sides to a frame with an interval between the upper portions;
The frame with the reflector case arranged and fixed is placed on the substrate on which the semiconductor light emitting chip is mounted, and the lower end of the pier of the reflector case is positioned between the semiconductor light emitting chips with the light emitting surfaces arranged in opposite directions. Storing and mounting the semiconductor light emitting chip in the interior ;
After placing the frame on which the reflector case is arranged and fixed on the substrate on which the semiconductor light emitting chip is mounted, the semiconductor light emitting chip housed in each of the constrictions is sealed by filling translucent resin from the interval. Process ,
After filling the translucent resin, the step of cutting the gap between the reflector pier and the reflector case to form an individual semiconductor light emitting device;
A method for manufacturing a semiconductor light emitting device, comprising:
JP23212099A 1999-08-19 1999-08-19 Manufacturing method of semiconductor light emitting device Expired - Fee Related JP3868675B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23212099A JP3868675B2 (en) 1999-08-19 1999-08-19 Manufacturing method of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23212099A JP3868675B2 (en) 1999-08-19 1999-08-19 Manufacturing method of semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JP2001057444A JP2001057444A (en) 2001-02-27
JP3868675B2 true JP3868675B2 (en) 2007-01-17

Family

ID=16934331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23212099A Expired - Fee Related JP3868675B2 (en) 1999-08-19 1999-08-19 Manufacturing method of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP3868675B2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323857A1 (en) 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Housing for a laser diode device, laser diode device and method of manufacturing a laser diode device
JP4034241B2 (en) * 2003-06-27 2008-01-16 日本ライツ株式会社 LIGHT SOURCE DEVICE AND LIGHT SOURCE DEVICE MANUFACTURING METHOD
KR100691179B1 (en) * 2005-06-01 2007-03-09 삼성전기주식회사 Side Emitting LED Package and Method of Manufacturing The Same
JP4739842B2 (en) * 2005-07-25 2011-08-03 スタンレー電気株式会社 Surface mount type LED
DE102007006583A1 (en) * 2007-02-09 2008-08-28 Wen-Kung Sung Method for manufacturing luminescent diode, involves superimposing housing on substrate, which is provided with two metal electrodes, where substrate is provided in center with isolation area which separates two metal electrodes
KR101122432B1 (en) * 2010-04-08 2012-03-09 희성전자 주식회사 LED array of side view type and manufacturing process of the same
JP2015133369A (en) * 2014-01-10 2015-07-23 アピックヤマダ株式会社 Optical device and method of manufacturing the same
JP6592902B2 (en) * 2014-03-28 2019-10-23 日亜化学工業株式会社 Light emitting device
JP6349904B2 (en) * 2014-04-18 2018-07-04 日亜化学工業株式会社 Semiconductor light emitting device and manufacturing method thereof
DE102016101942B4 (en) 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic lighting device

Also Published As

Publication number Publication date
JP2001057444A (en) 2001-02-27

Similar Documents

Publication Publication Date Title
TWI621288B (en) Light-emitting diode mounting lead frame, resin-attached lead frame, method for manufacturing semiconductor device, and semiconductor element mounting lead frame
JP2981385B2 (en) Structure of chip component type LED and method of manufacturing the same
KR100638876B1 (en) Side view led with improved arrangement of protection device
JP3219881U (en) Light emitting device package
US8546160B2 (en) Method for packaging light emitting diodes
JP3868675B2 (en) Manufacturing method of semiconductor light emitting device
JP3642823B2 (en) Side light emitting device
JPH11186590A (en) Chip-type led
KR100868158B1 (en) Structure for sealing light-emitting diode chip and method thereof
JP2013115116A (en) Led module
EP2613369A1 (en) Light emitting device and method for manufacturing same
JP4127426B2 (en) Chip-type semiconductor package structure and manufacturing method
JPH10223817A (en) Electrode structure of side surface type electronic component and manufacture thereof
JPH02260450A (en) Semiconductor device and its mounting
JP5804550B2 (en) Light emitting device
JPH09321345A (en) Manufacture of surface mount light emitting semiconductor device
JP5436353B2 (en) Light emitting device
TWI476885B (en) Leadframe, assembly of leadframe and substrate and led module
JPH0661522A (en) Reflection type photocoupler
KR20080089041A (en) Led package comprising lead frame being without outer lead and method for fabricating the same
KR100754884B1 (en) Light-emitting device and method of manufacturing the same
JP2012243788A (en) Lead frame for led light emitting element and method of manufacturing the same
JP2003078172A (en) Led lead frame
JP2001177151A (en) Chip led
TWI679779B (en) Led package structure, chip carrier, and method for manufacturing thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040316

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060529

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060606

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061011

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees