JP2001057444A - Manufacture of semiconductor light-emitting device - Google Patents
Manufacture of semiconductor light-emitting deviceInfo
- Publication number
- JP2001057444A JP2001057444A JP23212099A JP23212099A JP2001057444A JP 2001057444 A JP2001057444 A JP 2001057444A JP 23212099 A JP23212099 A JP 23212099A JP 23212099 A JP23212099 A JP 23212099A JP 2001057444 A JP2001057444 A JP 2001057444A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- emitting device
- emitting
- synthetic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、側面を発光させる
ように構成した半導体発光装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device configured to emit light on its side.
【０００２】[0002]
【従来の技術】半導体発光装置は、一般的には発光面を
実装基板に対して垂直方向に設定して実装されている。
しかしながら、サイドビュ−形の表示装置等において
は、半導体発光装置の発光面を実装基板に対して水平方
向に設定することが必要になる場合がある。このような
場合には、側面発光型の半導体発光装置が使用される。2. Description of the Related Art A semiconductor light emitting device is generally mounted with a light emitting surface set in a direction perpendicular to a mounting substrate.
However, in a side view type display device or the like, it may be necessary to set the light emitting surface of the semiconductor light emitting device in a horizontal direction with respect to the mounting substrate. In such a case, a side emission type semiconductor light emitting device is used.
【０００３】図４は、上記のような側面発光型の半導体
発光装置の一例を一部透視して示す斜視図である。図４
において、半導体発光装置１は、基板２の表面に一対の
リ−ド電極パタ−ン３、４を形成し、一方のリ−ド電極
パタ−ン４の上面に半導体発光チップ５を搭載する。半
導体発光チップ５は、他方のリ−ド電極パタ−ン３と金
属線６にてワイヤ−ボンデングされる。FIG. 4 is a perspective view showing an example of the above-described side emission type semiconductor light emitting device with a partial see-through. FIG.
In the semiconductor light emitting device 1, a pair of lead electrode patterns 3 and 4 are formed on the surface of a substrate 2, and a semiconductor light emitting chip 5 is mounted on the upper surface of one of the lead electrode patterns 4. The semiconductor light emitting chip 5 is wire-bonded with the other lead electrode pattern 3 and the metal wire 6.
【０００４】一対のリ−ド電極パタ−ン３、４、半導体
発光チップ５、金属線６を不透光性の合成樹脂で形成さ
れるリフレクタケ−ス８により覆う。このリフレクタケ
−ス８には、一方の側面に開口部が設けられており、開
口部内に透光性の合成樹脂７を充填する。半導体発光チ
ップ５、金属線６は透光性の合成樹脂７により封止され
る。A pair of lead electrode patterns 3, 4, a semiconductor light emitting chip 5, and a metal wire 6 are covered by a reflector case 8 formed of a light-impermeable synthetic resin. The reflector case 8 has an opening on one side surface, and the opening is filled with the translucent synthetic resin 7. The semiconductor light emitting chip 5 and the metal wire 6 are sealed with a transparent synthetic resin 7.
【０００５】図示しない接続端子から一対のリ−ド電極
パタ−ン３、４に通電すると、半導体発光チップ５から
出力光を発光する。この際の出力光は、背面および上部
でリフレクタケ−ス８により反射され、透光性の合成樹
脂７の端面、すなわち、半導体発光装置１の側面から実
装基板と平行な矢視Ａ方向に発射される。When a current is applied to a pair of lead electrode patterns 3 and 4 from a connection terminal (not shown), the semiconductor light emitting chip 5 emits output light. The output light at this time is reflected by the reflector case 8 on the rear surface and the upper portion, and is emitted from the end surface of the translucent synthetic resin 7, that is, the side surface of the semiconductor light emitting device 1, in the direction of arrow A parallel to the mounting substrate. You.
【０００６】図５は、図４のような側面発光型の半導体
発光装置１を多数連結した状態を示す断面図である。図
５において、発光面が同一方向となるように基板２に一
対のリ−ド電極パタ−ン３、４を形成し、一方のリ−ド
電極パタ−ン４上に半導体発光チップ５を搭載し、他方
のリ−ド電極パタ−ン３と金属線６にてワイヤ−ボンデ
ングする。FIG. 5 is a cross-sectional view showing a state in which a number of side-emitting semiconductor light emitting devices 1 as shown in FIG. 4 are connected. In FIG. 5, a pair of lead electrode patterns 3 and 4 are formed on a substrate 2 so that light emitting surfaces are in the same direction, and a semiconductor light emitting chip 5 is mounted on one of the lead electrode patterns 4. Then, wire bonding is performed with the other lead electrode pattern 3 and the metal wire 6.
【０００７】次に、前記したようなリフレクタケ−ス８
を同じ向きにして配置し、透光性の合成樹脂７を充填し
て、複数個連結した側面発光型の半導体発光装置１を形
成する。続いて、透光性の合成樹脂７がリフレクタケ−
ス８と接する矢視Ｘ１〜Ｘ４・・・の位置でレ−ザ等の
適宜の手段により切断する。Next, the reflector case 8 as described above.
Are arranged in the same direction, filled with a translucent synthetic resin 7 to form a plurality of connected side-emitting semiconductor light emitting devices 1. Subsequently, the light-transmitting synthetic resin 7 is used as a reflector casing.
Are cut by a suitable means such as a laser at the positions of arrows X1 to X4.
【０００８】従来においては、多数連結された半導体発
光装置を透光性の合成樹脂がリフレクタケ−スと接する
位置でそれぞれ切断して、個別の側面発光型の半導体発
光装置が形成されていた。このため、切断位置がずれて
リフレクタケ−ス８側に切断面が形成されてしまうと、
図６の斜視図に示すように、半導体発光装置１の側面に
リフレクタケ−スの残部８ａが付着する。Conventionally, a plurality of semiconductor light emitting devices connected to each other are cut at positions where a light-transmitting synthetic resin is in contact with the reflector case, thereby forming individual side emission type semiconductor light emitting devices. Therefore, if the cutting position is shifted and a cut surface is formed on the reflector case 8 side,
As shown in the perspective view of FIG. 6, the remaining portion 8a of the reflector case adheres to the side surface of the semiconductor light emitting device 1.
【０００９】[0009]
【発明が解決しようとする課題】このように、半導体発
光装置１の側面にリフレクタケ−スの残部８ａが付着す
る場合には、半導体発光装置１の出力光が側面から有効
に発射されないという問題があった。As described above, when the remaining portion 8a of the reflector case adheres to the side surface of the semiconductor light emitting device 1, there is a problem that the output light of the semiconductor light emitting device 1 is not effectively emitted from the side surface. there were.
【００１０】本発明はこのような問題に鑑みてなされた
ものであり、出力光が側面から有効に発射されるような
半導体発光装置の製造方法の提供を目的とする。The present invention has been made in view of such a problem, and an object of the present invention is to provide a method of manufacturing a semiconductor light emitting device in which output light is effectively emitted from a side surface.
【００１１】[0011]
【課題を解決するための手段】本発明の上記目的は、半
導体発光装置の製造方法を、側面に形成される発光面を
互いに逆向きにする配置と、当該発光面を互いに対向さ
せる配置を交互に繰り返して半導体発光チップを基板に
搭載する工程と、前記発光面を互いに逆向きにして配置
された各半導体発光チップ間を遮蔽すると共に、発光面
を互いに対向させて配置された各半導体発光チップを収
納する空間部を有し、前記空間部と連通する開口部を形
成したリフレクタケ−スを前記基板に載置する工程と、
当該開口部から透光性の合成樹脂を充填して前記空間部
に収納された半導体発光チップを封止する工程と、リフ
レクタケ−スの前記遮蔽側および透光性の合成樹脂が充
填された空間部を切断して個別の半導体発光装置を形成
する工程で構成とすることにより達成される。SUMMARY OF THE INVENTION The object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, wherein an arrangement in which light emitting surfaces formed on side surfaces are opposite to each other and an arrangement in which the light emitting surfaces are opposed to each other are alternated. Mounting the semiconductor light-emitting chip on the substrate repeatedly, and shielding between the semiconductor light-emitting chips arranged with the light-emitting surfaces opposite to each other, and each semiconductor light-emitting chip arranged with the light-emitting surfaces facing each other Mounting a reflector case having a space portion for accommodating therein and having an opening communicating with the space portion on the substrate;
A step of filling the light-transmitting synthetic resin from the opening to seal the semiconductor light-emitting chip housed in the space, and a step of filling the shield side of the reflector case and the space filled with the light-transmitting synthetic resin. This is achieved by forming the semiconductor light emitting device in a step of cutting individual portions to form individual semiconductor light emitting devices.
【００１２】このように、本発明においては、リフレク
タケ−スの空間部に半導体発光チップの発光面を対向配
置して透光性の合成樹脂を充填し、リフレクタケ−スの
部分と透光性の合成樹脂の部分で切断して個別の半導体
発光素子を形成している。このため、発光面にリフレク
タケ−スの残部が付着することがなく、出力光を側面か
ら効果的に発射することができる。As described above, according to the present invention, the light-emitting surface of the semiconductor light-emitting chip is opposed to the space of the reflector case and filled with a light-transmitting synthetic resin. The individual semiconductor light emitting elements are formed by cutting at the portion of the synthetic resin. Therefore, the output light can be effectively emitted from the side surface without the remaining of the reflector case adhering to the light emitting surface.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て図を参照して説明する。図２は本発明の実施の形態に
係る半導体発光装置の製造に用いるリフレクタケ−スの
配置を示す平面図、図１は図２の矢視Ｂ−Ｂ方向でみた
概略の断面図である。図２において、平面視矩形状の枠
体２０には複数のリフレクタケ−ス１８ａ〜１８ｆが配
置されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a plan view showing an arrangement of a reflector case used for manufacturing the semiconductor light emitting device according to the embodiment of the present invention, and FIG. 1 is a schematic sectional view taken along the line BB in FIG. In FIG. 2, a plurality of reflector cases 18a to 18f are arranged in a rectangular frame 20 in plan view.
【００１４】このリフレクタケ−ス１８ａ〜１８ｆは、
図１に示すように断面形状が上部は平坦で下方にくびれ
た橋脚形状としており、枠体および各リフレクタケ−ス
間には、図示のような空間部Ｄ１〜Ｄ４・・・が形成さ
れている。また、上部平坦面には、リフレクタケ−スと
枠体間および隣接するリフレクタケ−ス間に、開口部２
１ａ〜２１ｇが形成されている。The reflector cases 18a to 18f are
As shown in FIG. 1, the cross-sectional shape is a flat pier shape with a flat upper part and a constricted downward part, and spaces D1 to D4... Are formed between the frame body and the respective reflector cases. . An opening 2 is provided in the upper flat surface between the reflector case and the frame body and between the adjacent reflector cases.
1a to 21g are formed.
【００１５】基板１２に一対のリ−ド電極パタ−ン１
３、１４を形成し、一方のリ−ド電極パタ−ン１４の上
面に半導体発光チップ１５を搭載する。また、半導体発
光チップ１５は、他方のリ−ド電極パタ−ン１３と金属
線１６にてワイヤ−ボンデングされる。A pair of lead electrode patterns 1 is provided on the substrate 12.
3 and 14 are formed, and a semiconductor light emitting chip 15 is mounted on the upper surface of one of the lead electrode patterns 14. The semiconductor light emitting chip 15 is wire-bonded to the other lead electrode pattern 13 and the metal wire 16.
【００１６】このような半導体発光チップを、図１のＣ
１のエリアとＣ２のエリアでは発光面を互いに逆向き
に、また、Ｃ２のエリアとＣ３のエリアでは発光面を互
いに対向させて配置する。以下同様に、発光面を互いに
逆向きにする配置と発光面を互いに対向させる配置を交
互に繰り返して各半導体発光チップを配置する。Such a semiconductor light emitting chip is shown in FIG.
In the area 1 and the area C2, the light emitting surfaces are arranged in opposite directions, and in the area C2 and the area C3, the light emitting surfaces are arranged to face each other. Similarly, the semiconductor light emitting chips are arranged by alternately repeating the arrangement in which the light emitting surfaces are opposite to each other and the arrangement in which the light emitting surfaces are opposed to each other.
【００１７】縦方向および横方向にマトリックス状に所
定数の半導体発光チップを前記のようにして基板上に搭
載した後に、図２の枠体およびリフレクタケ−スを当該
基板に載置する。次に、前記開口部２１ａ〜２１ｇから
透光性の合成樹脂１７を充填する。このようにして、各
半導体発光チップ１５と金属線１６は透光性の合成樹脂
１７により封止される。続いて、複数連結されている半
導体発光装置を図１のＹ１〜Ｙ４の位置で切断して個別
の半導体発光装置１１を形成する。After mounting a predetermined number of semiconductor light-emitting chips in a matrix in the vertical and horizontal directions on the substrate as described above, the frame body and the reflector case shown in FIG. 2 are mounted on the substrate. Next, the transparent synthetic resin 17 is filled through the openings 21a to 21g. Thus, each semiconductor light emitting chip 15 and the metal wire 16 are sealed with the translucent synthetic resin 17. Subsequently, the plurality of connected semiconductor light emitting devices are cut at positions Y1 to Y4 in FIG. 1 to form individual semiconductor light emitting devices 11.
【００１８】図３は、図２の枠体２０およびリフレクタ
ケ−ス１８ａ〜１８ｆ間の開口部２１ａ〜２１ｇから透
光性の合成樹脂１７を充填した後に、個別の半導体発光
装置１１を形成するために、レ−ザ等により切断する際
の切断位置を具体的に示す平面図である。FIG. 3 shows a process for forming an individual semiconductor light emitting device 11 after filling the transparent synthetic resin 17 from the openings 21a to 21g between the frame 20 and the reflector cases 18a to 18f of FIG. FIG. 4 is a plan view specifically showing a cutting position when cutting with a laser or the like.
【００１９】図３において、Ｙａ〜Ｙｊは図示縦方向の
切断線で、Ｚａ〜Ｚｇは図示横方向の切断線である。ま
た、Ｙａ、Ｙｊ、Ｚａ、Ｚｇの切断線は枠体２０を除去
する切断線である。縦方向の切断線は、透光性の合成樹
脂１７が充填された開口部２１ａ〜２１ｇと、リフレク
タケ−ス１８ａ〜１８ｆの位置で交互に形成されてる。
このように、縦方向および横方向にマトリックス状に切
断線を形成することにより、多数の半導体発光装置を迅
速に得ることができる。In FIG. 3, Ya to Yj are vertical cutting lines in the drawing, and Za to Zg are horizontal cutting lines in the drawing. The cutting lines of Ya, Yj, Za, and Zg are cutting lines for removing the frame 20. The vertical cutting lines are formed alternately at the positions of the openings 21a to 21g filled with the translucent synthetic resin 17 and the reflector cases 18a to 18f.
As described above, by forming the cutting lines in a matrix in the vertical direction and the horizontal direction, a large number of semiconductor light emitting devices can be quickly obtained.
【００２０】図１、図３に示すように、本発明において
は半導体発光装置の発光面を互いに対向配置して、リフ
レクタケ−スに充填された透光性の合成樹脂の部分、す
なわち発光面となる部分と、リフレクタケ−スの部分で
切断して個別の半導体発光装置を形成している。このた
め、発光面にリフレクタケ−スの残部が付着することが
なく、出力光を側面から効果的に発射することができ
る。As shown in FIGS. 1 and 3, in the present invention, the light-emitting surfaces of the semiconductor light-emitting device are arranged to face each other, and the light-transmitting synthetic resin portion filled in the reflector case, ie, the light-emitting surface. And the reflector case is cut to form individual semiconductor light emitting devices. Therefore, the output light can be effectively emitted from the side surface without the remaining of the reflector case adhering to the light emitting surface.
【００２１】[0021]
【発明の効果】以上説明したように本発明の半導体発光
装置は、リフレクタケ−スの空間部に半導体発光チップ
の発光面を互いに対向配置して透光性の合成樹脂を充填
し、リフレクタケ−スの部分と透光性の合成樹脂の部分
で切断して個別の半導体発光装置を形成している。この
ため、発光面にリフレクタケ−スの残部が付着すること
がなく、出力光を側面から効果的に発射することができ
る。As described above, according to the semiconductor light emitting device of the present invention, the light emitting surfaces of the semiconductor light emitting chips are arranged opposite to each other in the space of the reflector case and filled with a transparent synthetic resin. And the transparent synthetic resin are cut to form individual semiconductor light emitting devices. Therefore, the output light can be effectively emitted from the side surface without the remaining of the reflector case adhering to the light emitting surface.
【図１】本発明の実施の形態に係る半導体発光装置の製
造において、個別の半導体発光装置を得る際の切断位置
を示す断面図である。FIG. 1 is a cross-sectional view showing a cutting position when an individual semiconductor light emitting device is obtained in manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
【図２】本発明の実施の形態に係る半導体発光装置の製
造に用いる枠体とリフレクタケ−スの配置を示す平面図
である。FIG. 2 is a plan view showing an arrangement of a frame and a reflector case used for manufacturing the semiconductor light emitting device according to the embodiment of the present invention.
【図３】図２の配置に対する切断線を示す平面図であ
る。FIG. 3 is a plan view showing a cutting line for the arrangement of FIG. 2;
【図４】側面発光型の半導体発光装置の一例を示す斜視
図である。FIG. 4 is a perspective view showing an example of a side emission type semiconductor light emitting device.
【図５】従来例の個別の半導体発光装置を得る際に形成
される切断位置を示す断面図である。FIG. 5 is a cross-sectional view showing a cutting position formed when an individual semiconductor light emitting device of a conventional example is obtained.
【図６】従来例の半導体発光装置の斜視図である。FIG. 6 is a perspective view of a conventional semiconductor light emitting device.
１１ 半導体発光装置 １２ 基板 １３、１４ 一対の電極パタ−ン １５ 半導体発光チップ １６ 金属線 １７ 透光性の合成樹脂 １８ａ〜１８ｆ リフレクタケ−ス ２０ 枠体 ２１ａ〜２１ｇ 開口部 DESCRIPTION OF SYMBOLS 11 Semiconductor light emitting device 12 Substrate 13, 14 A pair of electrode pattern 15 Semiconductor light emitting chip 16 Metal wire 17 Translucent synthetic resin 18a-18f Reflector case 20 Frame 21a-21g Opening
Claims (1)
にする配置と、当該発光面を互いに対向させる配置を交
互に繰り返して半導体発光チップを基板に搭載する工程
と、前記発光面を互いに逆向きにして配置された各半導
体発光チップ間を遮蔽すると共に、発光面を互いに対向
させて配置された各半導体発光チップを収納する空間部
を有し、前記空間部と連通する開口部を形成したリフレ
クタケ−スを前記基板に載置する工程と、当該開口部か
ら透光性の合成樹脂を充填して前記空間部に収納された
半導体発光チップを封止する工程と、リフレクタケ−ス
の前記遮蔽側および透光性の合成樹脂が充填された空間
部を切断して個別の半導体発光装置を形成する工程とか
らなることを特徴とする半導体発光装置の製造方法。A step of mounting a semiconductor light emitting chip on a substrate by alternately repeating an arrangement in which light emitting surfaces formed on side surfaces are opposite to each other and an arrangement in which the light emitting surfaces are opposed to each other; It has a space for accommodating each of the semiconductor light emitting chips arranged opposite to each other and for accommodating each of the semiconductor light emitting chips arranged with their light emitting surfaces facing each other, and forming an opening communicating with the space. Placing the reflector case on the substrate, filling the opening with a translucent synthetic resin to seal the semiconductor light-emitting chip housed in the space, and mounting the reflector case on the substrate. Forming a separate semiconductor light emitting device by cutting a shielding side and a space portion filled with a light-transmitting synthetic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23212099A JP3868675B2 (en) | 1999-08-19 | 1999-08-19 | Manufacturing method of semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23212099A JP3868675B2 (en) | 1999-08-19 | 1999-08-19 | Manufacturing method of semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001057444A true JP2001057444A (en) | 2001-02-27 |
| JP3868675B2 JP3868675B2 (en) | 2007-01-17 |
Family
ID=16934331
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23212099A Expired - Fee Related JP3868675B2 (en) | 1999-08-19 | 1999-08-19 | Manufacturing method of semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3868675B2 (en) |
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