US20060180839A1 - Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same - Google Patents

Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same Download PDF

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Publication number
US20060180839A1
US20060180839A1 US11/354,144 US35414406A US2006180839A1 US 20060180839 A1 US20060180839 A1 US 20060180839A1 US 35414406 A US35414406 A US 35414406A US 2006180839 A1 US2006180839 A1 US 2006180839A1
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United States
Prior art keywords
ferromagnetic
film
layer
magnetic layer
layered
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Abandoned
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US11/354,144
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English (en)
Inventor
Yoshiyuki Fukumoto
Chuuji Igarashi
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NEC Corp
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NEC Corp
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Assigned to NEC CORPORATION reassignment NEC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUKUMOTO, YOSHIYUKI, IGARASHI, CHUUJI
Publication of US20060180839A1 publication Critical patent/US20060180839A1/en
Priority to US12/834,646 priority Critical patent/US8865326B2/en
Priority to US14/454,102 priority patent/US20140346625A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
US11/354,144 2005-02-16 2006-02-15 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same Abandoned US20060180839A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/834,646 US8865326B2 (en) 2005-02-16 2010-07-12 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
US14/454,102 US20140346625A1 (en) 2005-02-16 2014-08-07 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005039852 2005-02-16
JP2005-039852 2005-02-16
JP2005-361431 2005-12-15
JP2005361431A JP5077802B2 (ja) 2005-02-16 2005-12-15 積層強磁性構造体、及び、ｍｔｊ素子

Related Child Applications (1)

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US12/834,646 Continuation US8865326B2 (en) 2005-02-16 2010-07-12 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Publications (1)

Publication Number Publication Date
US20060180839A1 true US20060180839A1 (en) 2006-08-17

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Family Applications (3)

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US11/354,144 Abandoned US20060180839A1 (en) 2005-02-16 2006-02-15 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
US12/834,646 Active 2026-05-29 US8865326B2 (en) 2005-02-16 2010-07-12 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
US14/454,102 Abandoned US20140346625A1 (en) 2005-02-16 2014-08-07 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/834,646 Active 2026-05-29 US8865326B2 (en) 2005-02-16 2010-07-12 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same
US14/454,102 Abandoned US20140346625A1 (en) 2005-02-16 2014-08-07 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same

Country Status (5)

Country Link
US (3) US20060180839A1 (de)
EP (1) EP1693854B1 (de)
JP (1) JP5077802B2 (de)
CN (1) CN1822219B (de)
DE (1) DE602006018377D1 (de)

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US20070278602A1 (en) * 2006-06-06 2007-12-06 Wolfgang Raberg MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
US20080186638A1 (en) * 2007-02-05 2008-08-07 Kazumasa Nishimura Tunneling magnetic sensing element having free magnetic layer inserted with nonmagnetic metal layers
US20090219754A1 (en) * 2005-05-19 2009-09-03 Nec Corporation Magnetoresistive device and magnetic memory using the same
US7695761B1 (en) 2006-12-21 2010-04-13 Western Digital (Fremont), Llc Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer
US20100258889A1 (en) * 2007-07-23 2010-10-14 Magic Technologies, Inc. High performance MTJ elements for STT-RAM and method for making the same
WO2010126723A1 (en) * 2009-04-30 2010-11-04 Everspin Technologies, Inc. A method for reducing current density in a magnetoelectronic device
US20110109397A1 (en) * 2009-11-06 2011-05-12 Commissariat A I'energie Atomique Et Aux Energies Alternatives Radiofrequency oscillator
US20110222335A1 (en) * 2007-09-25 2011-09-15 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
US20120069471A1 (en) * 2010-09-16 2012-03-22 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane (cpp) read sensor with ferromagnetic buffer, shielding and seed layers
US8194365B1 (en) 2009-09-03 2012-06-05 Western Digital (Fremont), Llc Method and system for providing a read sensor having a low magnetostriction free layer
US8243401B2 (en) 2009-10-02 2012-08-14 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistance read sensor with dual sense layers
US8383427B2 (en) 2008-06-04 2013-02-26 Renesas Electronics Corporation Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor
US20130077390A1 (en) * 2011-09-28 2013-03-28 Crocus Technology Sa Magnetic random access memory (mram) cell, method for writing and reading the mram cell using a self-referenced read operation
US20130099339A1 (en) * 2011-10-20 2013-04-25 The United States Of America As Represented By The Secretary Of The Army Spintronic Electronic Device and Circuits
US8451566B2 (en) 2010-09-16 2013-05-28 HGST Netherlands B.V. Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer and seed layers
US8498084B1 (en) 2009-07-21 2013-07-30 Western Digital (Fremont), Llc Magnetoresistive sensors having an improved free layer
US8545999B1 (en) 2008-02-21 2013-10-01 Western Digital (Fremont), Llc Method and system for providing a magnetoresistive structure
US8559141B1 (en) 2007-05-07 2013-10-15 Western Digital (Fremont), Llc Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
US20130313665A1 (en) * 2010-05-26 2013-11-28 Samsung Electronics Co., Ltd. Magnetic Tunnel Junction Device Having Amorphous Buffer Layers That Are Magnetically Connected Together And That Have Perpendicular Magnetic Anisotropy
US20140139214A1 (en) * 2012-11-16 2014-05-22 Korea Basic Science Institute Magnetic sensor using spin transfer torque devices
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US20150084624A1 (en) * 2013-09-25 2015-03-26 Seagate Technology Llc Magnetoresistive sensor
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