US20060175383A1 - Wire bonding method - Google Patents

Wire bonding method Download PDF

Info

Publication number
US20060175383A1
US20060175383A1 US11/347,479 US34747906A US2006175383A1 US 20060175383 A1 US20060175383 A1 US 20060175383A1 US 34747906 A US34747906 A US 34747906A US 2006175383 A1 US2006175383 A1 US 2006175383A1
Authority
US
United States
Prior art keywords
wire
bonding
bump
capillary
interconnect wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/347,479
Other languages
English (en)
Inventor
Tatsunari Mii
Toshihiko Toyama
Shinsuke Tei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Assigned to KABUSHIKI KAISHA SHINKAWA reassignment KABUSHIKI KAISHA SHINKAWA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MII, TATSUNARI, TEI, SHINSUKE, TOYAMA, TOSHIHIKO
Publication of US20060175383A1 publication Critical patent/US20060175383A1/en
Priority to US12/384,643 priority Critical patent/US7934634B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates to a wire bonding method and more particularly to a wire bonding method well suited to low-loop implementation.
  • Japanese Patent Application Laid-Open (Kokai) Nos. H9-51011 and 2004-172477 solve the above-described problems.
  • the methods disclosed in these publications takes the following steps: a ball formed at the tip end of a wire is first bonded to a die pad to form a compression-bond ball; next, after raising the capillary, it is moved in a direction opposite from an interconnect wiring (or an outer lead of a lead frame); then, after raising the capillary, it is moved to directly above the pad; the capillary is next lowered, and the wire is pressure-bonded onto the pressure-bond ball; and then, the capillary is moved onto the interconnect wiring, bonding the wire to the interconnect wiring.
  • the object of the present invention is to provide a wire bonding method that provides a further or improved low-loop implementation.
  • die pad or merely “pad”
  • interconnect wiring that is a second bond point
  • this bump forming process including a step of cutting and bending a wire protruding from a tip end of a capillary in a lateral direction thus forming a bent part in the wire;
  • the above object is accomplished by another series of unique processes of the present invention for a wire bonding method that performs first bonding to an interconnect wiring that is a first bond point and second bonding to a die pad that is a second bond point, thus connecting the interconnect wiring and die pad; and in the present invention, the method includes sequentially:
  • this bump forming process including a step of cutting and bending a wire protruding from a tip end of a capillary in a lateral direction thus forming a bent part in the wire;
  • first bonding process for bonding the bent part of the wire to the interconnect wiring thus forming a lower first bonding part on the interconnect wiring, the first bonding process further raising and moving the capillary above the lower first bonding part then lowering the capillary and superimposing and connecting the wire onto the lower first bonding part thus forming an upper first bonding part on the lower first bonding;
  • the bent part is formed by holding the wire with a clamper, and moving the damper and capillary in the lateral direction, thus cutting the wire.
  • the bent part can be formed by holding the wire with a clamper, and then moving the capillary and damper parallel to the direction for joining the interconnect wiring and die pad and toward the interconnect wiring, thus cutting the wire.
  • the bump forming process comprises the ordered steps of:
  • the bump forming process may include the ordered steps of:
  • a bump is formed on a pad of a die (“die pad” or “pad”) that is the first bond point; and, when a wire is cut from the bump, a bent part is formed in the wire protruding from the tip end of the capillary; as a result, when bonding is performed to the first bond point, the bent part is formed at the tip end of the wire without using a special apparatus and thus the bent part is formed by an existing wire bonding apparatus.
  • the loop height at the first bond point can be made lower, and low wire loop implementation is effected.
  • the wire is bonded to the bump directly as a second bond point, the loop height at the second bond point can be made lower, and low wire loop implementation is effected. Furthermore, the bent part is bonded to the interconnect wiring that is the first bond point to first form a lower first bonding part, and then the wire is bent and superimposed onto that lower first bonding part to form an upper first bonding part. Accordingly, the reliability of the bonding strength to the interconnect wiring is significantly enhanced.
  • the bent part is formed, when cutting the wire from the bump, by moving the capillary parallel to the interconnect wiring and the bump to be connected next and then toward the interconnect wiring that is the second bond point; as a result, the direction of the bent part of the wire tip end can be bent in a direction suitable for the next bonding, and, in conjunction therewith, the shape of the wire loop for bonding that bent part to the interconnect wiring that is the second bond point, after bonding it to the bump, can be made lower. For this reason also, low wire loop implementation can be effected.
  • the ball is mashed when forming the bump until the thickness is such that tearing-off occurs from the lower part of the ball neck portion when the wire is pulled; accordingly, the bump height is extremely low, the loop height on the pad can be made even lower, and further low wire loop implementation is effected.
  • FIG. 2 shows further steps that continue on from step (h) of FIG. 1 ;
  • FIG. 3 shows steps according to a second embodiment of the wire bonding method of the present invention, step (a) of FIG. 3 continuing on from step (f) of FIG. 1 ;
  • FIG. 5 shows steps according to a third embodiment of the wire bonding method of the present invention
  • FIG. 6 shows further steps that continue on from step (f) of FIG. 5 ;
  • FIG. 7 shows steps according to a fourth embodiment of the wire bonding method of the present invention, step (a) of FIG. 7 continuing on from step (d) of FIG. 5 ;
  • FIG. 8 shows further steps that continue on from step (f) of FIG. 7 .
  • a first embodiment of the wire bonding method of the present invention is described with reference to FIG. 1 and FIG. 2 .
  • a die 3 on which a pad 2 of a die (or “die pad”) is formed is mounted on a circuit board 1 comprising a ceramic substrate or print board or lead frame or the like.
  • An interconnect wiring (or an outer lead or conductive pathways) 4 is formed on the circuit board 1 .
  • a ball 11 is formed by an electric torch (not shown in the drawing) at the tip end of a wire 10 passed through a damper 5 and inserted through a capillary 6 , after which the damper 5 is in an open condition.
  • step (b) the capillary 6 descends (or lowered) and bonds the ball 11 to the pad 2 that is the first bond point. Thereby, a portion of the ball 11 bulges up into the through-hole 6 a in the capillary 6 , and a pillar portion 13 is formed on a bump 12 .
  • step (c) the capillary 6 is raised so that the edge 6 b at the lower end of the capillary 6 is positioned within the height of the pillar portion 13 .
  • step (d) the damper 5 and capillary 6 are moved together in a direction toward the interconnect wiring 4 side that is the second bond point, and a small thickness portion 14 is formed at the connection between the bump 12 and the wire 10 .
  • the damper 5 closes, and the damper 5 and capillary 6 ascend (or raised) together by a fixed amount.
  • step (f) the damper 5 and capillary 6 move together to the side of the interconnect wiring 4 that is the second bond point.
  • the wire 10 is cut from the small thickness portion 14 , and the bump 12 is formed on the pad 2 .
  • a bent part 15 is formed which is bent in a direction toward the bump 12 side. The bump forming process is thus completed.
  • step (g) the bent part 15 is moved so as to be positioned above the bump 12 .
  • step (h) after the damper opens, the capillary 6 descends, bonds the bent part 15 to the bump 12 , and forms the first bonding part 16 . Also, the damper 5 is brought in an open condition, completing the first bonding process.
  • the wire 10 is connected to the interconnect wiring 4 that is the second bond point (as seen conventionally).
  • step (a) the capillary 6 ascends in step (a), and, in step (b), the capillary 6 moves toward the interconnect wiring 4 and pays out the wire 10 , and then descends, bonds the wire 10 to the interconnect wiring 4 , and makes that the second bonding part 17 .
  • step (c) the damper 5 and capillary 6 ascend together, during which ascension the damper 5 closes, and the wire 10 is cut from the base of the second bonding part 17 , completing the second bonding process.
  • the bump 12 is formed on the pad 2 that is the first bond point, and the bent part 15 is formed in the wire protruding at the tip end of the capillary 6 when the wire 10 is cut from that bump 12 , the bent part 15 at the tip end of the wire can be formed by an existing wire bonding apparatus when bonding is made for the first bond point without providing a special apparatus. Moreover, because the bent part 15 is bonded directly to the bump 12 , the first bond point loop height can be lowered. More specifically, low wire loop implementation is effected.
  • the above-described bent part 15 is formed by moving the capillary 6 both in parallel with the bump 12 and interconnect wiring 4 that are connected next when cutting the wire 10 from the bump 12 , and to the side of the interconnect wiring 4 that is the second bond point.
  • the direction of the bent part 15 at the tip end of the wire can be bent in a direction suitable for the next bonding while, at the same time, after bonding that bent part 15 to the bump 12 , the shape of the wire loop for bonding to the interconnect wiring 4 that is the second bond point can be made lower. For this reason also, low wire loop implementation can be effected.
  • the capillary 6 is raised so that the edge 6 b at the lower end of the capillary 6 is positioned within the height of the pillar portion 13 formed on the bump 12 , next the capillary 6 is moved in a lateral direction and the small thickness portion 14 is formed at the connection between the bump 12 and the wire 10 , and then, after raising the capillary 6 by a fixed amount, the wire 10 is pulled and cut from the small thickness portion 14 , whereupon the upper surface of the bump 12 becomes flat; as a result, the interconnect wiring direction for the wire 10 connected to that bump 12 becomes substantially horizontal, and low wire loop implementation is effected.
  • FIG. 1 A second embodiment of the wire bonding method of the present invention is described in FIG. 1 , FIG. 3 , and FIG. 4 .
  • This embodiment in addition to being such that the bump 12 is formed on the pad 2 in steps (a) to (f) in FIG. 1 , is the same as the above-described embodiment up to the formation of the bent part 15 that is bent in the direction on the side of the bump 12 at the lower surface of the capillary 6 .
  • the bent part 15 is bonded onto the interconnect wiring 4 (though in the previous embodiment the bent part 15 is bonded onto the bump 12 ). More specifically, though in the first embodiment, the pad 2 is the first bond point and the interconnect wiring 4 is the second bond point, in the second embodiment, conversely, the interconnect wiring 4 is the first bond point and the pad 2 is the second bond point.
  • the capillary 6 is moved upward from the interconnect wiring 4 in step (a) of FIG. 3 .
  • step (b) the damper 5 closes, the capillary 6 descends, bonds the bent part 15 to the interconnect wiring 4 that is the first bond point, and forms a lower first bonding part 20 . Also, the damper 5 is brought in an open condition.
  • step (c) the capillary 6 is raised, and then is moved above the lower first bonding part 20 in step (d).
  • step (e) the damper closes, the capillary 6 is lowered, the wire portion 21 shown in the illustration for step (d) is bent, and the wire portion 21 is bonded onto the lower part first bond point, forming an upper first bonding part 22 , thus making it a first bonding part 3 and completing the first bonding process.
  • step (e) the wire 10 is connected onto the bump 12 formed on the pad 2 that is the second bond point.
  • step (f) the capillary 6 ascends, and it moves toward the pad 2 in step (a) of FIG. 4 , paying out the wire 10 , and then descends, bonds the wire 10 to the bump 12 , and makes it a second bonding part 24 .
  • step (b) of FIG. 4 the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is cut from the base of the second bonding part 24 , thus completing the second bonding process.
  • the first bond point has become the interconnect wiring 4 .
  • the bonding strength will be weak if the bent part 15 is bonded only to the interconnect wiring 4 .
  • the bent part 15 is bonded to the first bond point to first form the lower first bonding part 20 , and then the wire portion 21 is bent and superimposed on that lower first bonding part 20 to form the upper first bonding part 22 .
  • the reliability of the bonding strength to the first bond point is significantly enhanced.
  • the bump 12 is formed on the pad 2 , and the wire 10 is bonded directly to that bump 12 as the second bond point, the loop height on the pad 2 side becomes lower. In other words, low wire loop implementation is effected.
  • the bump 12 is formed on the pad 2 that is the second bond point, and the protruding wire bent part 15 is formed at the tip end of the capillary 6 when the wire 10 is cut from that bump 12 , the bent part 15 at the wire tip end can be formed by an existing wire bonding apparatus, without providing a special apparatus, when bonding is made for the first bond point.
  • FIG. 5 and FIG. 6 A third embodiment of the wire bonding method of the present invention is described in FIG. 5 and FIG. 6 . Members that are the same as or correspond to those in the above-described embodiments are described in designating them with the same symbol. This third embodiment differs from the above-described first embodiment only in the method of forming the bump 12 .
  • step (b) the capillary 6 descends and bonds the ball 11 to the pad 2 that is the first bond point.
  • the ball 11 is mashed to the limit.
  • the ball 11 is mashed until the height H of the lower part of the ball neck portion becomes 0 to 5 ⁇ m or so (thickness at which the wire 10 will tear off from the lower part of the ball neck portion when it is pulled diagonally upward).
  • the height H of the lower part of the ball neck portion will be the thickness of the small thickness portion 30 .
  • step (d) of FIG. 5 the damper closes, the bent part 15 of the wire is moved so as to be positioned above the bump 12 .
  • step (f) the damper opens, the capillary 6 descends, bonding the bent part 15 to the bump 12 , thus forming the first bonding part 16 .
  • the clamper 5 is brought in an open condition.
  • step (a) shown in FIG. 6 the capillary 6 ascends, moves in step (b) toward the interconnect wiring 4 and pays out the wire 10 , then descends and bonds the wire 10 to the interconnect wiring 4 , making it the second bonding part 17 .
  • step (c) the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is curt from the base of the second bonding part 17 .
  • this third embodiment in particular, the ball 11 is mashed during the formation of the bump 12 until the thickness thereof becomes such that it will tear away from the lower part of the ball neck portion when the wire 10 is pulled; as a result, the height of the bump 12 is made extremely low. For that reason, in the method of the third embodiment, the loop height on the pad 2 can be made lower, and greater low wire loop implementation is effected, than with the above-described first embodiment.
  • a fourth embodiment of the wire bonding method of the present invention is performed with steps (a) to (d) in FIG. 5 and steps of FIGS. 7 and 8 .
  • the fourth embodiment in addition to being such that the bump 12 is formed on the pad 2 in the steps (a) to (d) shown in FIG. 5 , is the same as the above-described embodiment up to the formation of the ball neck portion 31 and the bent part 15 that is bent in the direction on the side of the bump 12 at the lower surface of the capillary 6 . After that, the same processes as those for the second embodiment (see FIGS. 3 and 4 ) are performed.
  • the damper 5 opens, and the capillary 6 is moved in step (a) shown in FIG. 7 to above the interconnect wiring 4 .
  • step (b) the capillary 6 descends, bonds the bent part 15 to the interconnect wiring 4 that is the first bond point, and forms the lower first bonding part 20 .
  • step (c) the capillary 6 is raised, and in step (d), the capillary 6 is moved above the lower first bonding part 20 .
  • step (e) the capillary 6 is lowered, the wire portion 21 show in the illustration for step (d) is bent, the wire portion 21 is bonded onto the lower first bonding part 20 , whereupon the upper first bonding part 22 is formed, and that is made the first bonding part 23 .
  • step (d) the wire 10 is connected onto the bump 12 formed on the pad 2 that is the second bond point. More specifically, in step (f) shown in FIG. 7 , the capillary 6 ascends and moves in step (a) shown in FIG. 8 toward the pad 2 and pays out the wire 10 , then it descends and bonds the wire 10 to the bump 12 , making it the second bonding part 24 . Next, in step (b), the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is cut from the base of the second bonding part 24 .
  • the ball 11 is, as in the third embodiment, crushed during the formation of the bump 12 until the thickness thereof becomes such that it will tear away from the lower part of the ball neck portion when the wire 10 is pulled.
  • the height of the bump 12 can be made extremely low.
  • the loop height on the pad 2 can further be lowered, and greater low wire loop implementation is effected than the second embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
US11/347,479 2005-02-08 2006-02-03 Wire bonding method Abandoned US20060175383A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/384,643 US7934634B2 (en) 2005-02-08 2009-04-07 Wire bonding method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005031701A JP4298665B2 (ja) 2005-02-08 2005-02-08 ワイヤボンディング方法
JP2005-31701 2005-02-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/384,643 Division US7934634B2 (en) 2005-02-08 2009-04-07 Wire bonding method

Publications (1)

Publication Number Publication Date
US20060175383A1 true US20060175383A1 (en) 2006-08-10

Family

ID=36778943

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/347,479 Abandoned US20060175383A1 (en) 2005-02-08 2006-02-03 Wire bonding method
US12/384,643 Expired - Fee Related US7934634B2 (en) 2005-02-08 2009-04-07 Wire bonding method

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/384,643 Expired - Fee Related US7934634B2 (en) 2005-02-08 2009-04-07 Wire bonding method

Country Status (4)

Country Link
US (2) US20060175383A1 (enExample)
JP (1) JP4298665B2 (enExample)
KR (1) KR100765376B1 (enExample)
TW (1) TW200629447A (enExample)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050092815A1 (en) * 2003-10-30 2005-05-05 Kabushiki Kaisha Shinkawa Semiconductor device and wire bonding method
US20050109819A1 (en) * 2003-11-26 2005-05-26 Kulicke & Soffa Industries, Inc. Low loop height ball bonding method and apparatus
US20070187467A1 (en) * 2006-02-14 2007-08-16 Kabushiki Kaisha Shinkawa Method for forming a stud bump
US20070246513A1 (en) * 2006-04-24 2007-10-25 Kabushiki Kaisha Shinkawa Tail wire cutting method and bonding apparatus
WO2009096950A1 (en) * 2008-01-30 2009-08-06 Kulicke And Soffa Industries, Inc. Wire loop and method of forming the wire loop
US20100059574A1 (en) * 2008-09-10 2010-03-11 Kaijo Corporation Wire bonding method, wire bonding apparatus, and wire bonding control program
US20100237480A1 (en) * 2007-09-21 2010-09-23 Shinkawa Ltd. Semiconductor device and wire bonding method
US20120055976A1 (en) * 2010-01-27 2012-03-08 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
US20120139129A1 (en) * 2008-10-27 2012-06-07 Shinkawa Ltd. Wire bonding method and semiconductor device
US20130220673A1 (en) * 2010-10-12 2013-08-29 Technische Universitaet Berlin Heavy-wire bond arrangement and method for producing same
US20130307148A1 (en) * 2011-09-09 2013-11-21 Carsem (M) Sdn. Bhd. Low loop wire bonding
WO2014014643A1 (en) * 2012-07-17 2014-01-23 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures
US20150021376A1 (en) * 2013-07-17 2015-01-22 Freescale Semiconductor, Inc. Wire bonding capillary with working tip protrusion
US20150129647A1 (en) * 2013-11-12 2015-05-14 Invensas Corporation Severing bond wire by kinking and twisting
US20150129646A1 (en) * 2013-11-12 2015-05-14 Invensas Corporation Off substrate kinking of bond wire
US20160351535A1 (en) * 2014-02-10 2016-12-01 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
WO2019232718A1 (en) * 2018-06-06 2019-12-12 Texas Instruments Incorporated Ball bond attachment for semiconductor die
CN111668124A (zh) * 2019-03-05 2020-09-15 先进科技新加坡有限公司 键合引线垂直互连部的形成
CN114207790A (zh) * 2020-07-15 2022-03-18 株式会社新川 打线接合装置及半导体装置的制造方法
US20220199570A1 (en) * 2020-12-18 2022-06-23 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
US20220208721A1 (en) * 2019-05-27 2022-06-30 Shinkawa Ltd. Wire bonding apparatus, method for manufacture of semiconductor device, and semiconductor device
US20230282613A1 (en) * 2021-06-07 2023-09-07 Shinkawa Ltd. Manufacturing method of semiconductor device and wire bonding apparatus
US20240290746A1 (en) * 2023-02-24 2024-08-29 Texas Instruments Incorporated Ball bonding for semiconductor devices

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100833187B1 (ko) * 2006-11-02 2008-05-28 삼성전자주식회사 반도체 패키지의 와이어 본딩방법
WO2011043417A1 (ja) * 2009-10-09 2011-04-14 日亜化学工業株式会社 半導体装置及びその製造方法
JP5359977B2 (ja) * 2010-04-12 2013-12-04 株式会社デンソー ワイヤボンディング方法
JP2012004464A (ja) * 2010-06-18 2012-01-05 Toshiba Corp 半導体装置、半導体装置の製造方法及び半導体装置の製造装置
JP5700482B2 (ja) * 2012-11-16 2015-04-15 株式会社新川 ワイヤボンディング装置及び半導体装置の製造方法
JP2014140074A (ja) * 2014-04-17 2014-07-31 Toshiba Corp 半導体装置
DE102014116956A1 (de) 2014-11-19 2016-05-19 Infineon Technologies Ag Verfahren zum Bilden eines Bondpads und Bondpad
US10600756B1 (en) 2017-02-15 2020-03-24 United States Of America, As Represented By The Secretary Of The Navy Wire bonding technique for integrated circuit board connections

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040026480A1 (en) * 2002-08-08 2004-02-12 Kaijo Corporation Wire bonding method, method of forming bump and bump
US20040104477A1 (en) * 2002-11-21 2004-06-03 Hiromi Fujisawa Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus
US20040146128A1 (en) * 2001-06-11 2004-07-29 Michael Cuje Method to compensate for a step DC disturbance in a digital baseband signal in a homodyne radio receiver
US20040164127A1 (en) * 2003-02-17 2004-08-26 Kabushiki Kaisha Shinkawa Wire bonding method
US20050054186A1 (en) * 2003-09-04 2005-03-10 Jin-Ho Kim Wire bonding method, semiconductor chip, and semiconductor package
US20050167473A1 (en) * 2004-01-09 2005-08-04 Unaxis International Trading Ltd. Method for producing wedge-wedge wire connection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951011A (ja) 1995-08-10 1997-02-18 Tanaka Denshi Kogyo Kk 半導体チップのワイヤボンディング方法
JP3573133B2 (ja) * 2002-02-19 2004-10-06 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
JP3923379B2 (ja) 2002-06-21 2007-05-30 株式会社ルネサステクノロジ 半導体装置
JP3854232B2 (ja) * 2003-02-17 2006-12-06 株式会社新川 バンプ形成方法及びワイヤボンディング方法
US7494042B2 (en) * 2003-10-02 2009-02-24 Asm Technology Singapore Pte. Ltd. Method of forming low wire loops and wire loops formed using the method
JP2006261448A (ja) 2005-03-17 2006-09-28 Toshiba Corp 半導体装置および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040146128A1 (en) * 2001-06-11 2004-07-29 Michael Cuje Method to compensate for a step DC disturbance in a digital baseband signal in a homodyne radio receiver
US20040026480A1 (en) * 2002-08-08 2004-02-12 Kaijo Corporation Wire bonding method, method of forming bump and bump
US20040104477A1 (en) * 2002-11-21 2004-06-03 Hiromi Fujisawa Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus
US20040164127A1 (en) * 2003-02-17 2004-08-26 Kabushiki Kaisha Shinkawa Wire bonding method
US20050054186A1 (en) * 2003-09-04 2005-03-10 Jin-Ho Kim Wire bonding method, semiconductor chip, and semiconductor package
US20050167473A1 (en) * 2004-01-09 2005-08-04 Unaxis International Trading Ltd. Method for producing wedge-wedge wire connection

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050092815A1 (en) * 2003-10-30 2005-05-05 Kabushiki Kaisha Shinkawa Semiconductor device and wire bonding method
US20050109819A1 (en) * 2003-11-26 2005-05-26 Kulicke & Soffa Industries, Inc. Low loop height ball bonding method and apparatus
US7347352B2 (en) * 2003-11-26 2008-03-25 Kulicke And Soffa Industries, Inc. Low loop height ball bonding method and apparatus
US20080111252A1 (en) * 2003-11-26 2008-05-15 Kulicke And Soffa Industries, Inc. Low loop height ball bonding method and apparatus
US7584881B2 (en) 2003-11-26 2009-09-08 Kulicke And Soffa Industries, Inc. Low loop height ball bonding method and apparatus
US20070187467A1 (en) * 2006-02-14 2007-08-16 Kabushiki Kaisha Shinkawa Method for forming a stud bump
US20070246513A1 (en) * 2006-04-24 2007-10-25 Kabushiki Kaisha Shinkawa Tail wire cutting method and bonding apparatus
US7658314B2 (en) * 2006-04-24 2010-02-09 Kabushiki Kaisha Shinkawa Tail wire cutting method and bonding apparatus
US20100237480A1 (en) * 2007-09-21 2010-09-23 Shinkawa Ltd. Semiconductor device and wire bonding method
US7821140B2 (en) * 2007-09-21 2010-10-26 Shinkawa Ltd. Semiconductor device and wire bonding method
WO2009096950A1 (en) * 2008-01-30 2009-08-06 Kulicke And Soffa Industries, Inc. Wire loop and method of forming the wire loop
US20100230809A1 (en) * 2008-01-30 2010-09-16 Kulicke And Soffa Industries, Inc. Wire loop and method of forming the wire loop
US8048720B2 (en) * 2008-01-30 2011-11-01 Kulicke And Soffa Industries, Inc. Wire loop and method of forming the wire loop
US20100206940A1 (en) * 2008-09-10 2010-08-19 Kaijo Corporation Wire bonding method, wire bonding apparatus, and wire bonding control program
US8042725B2 (en) 2008-09-10 2011-10-25 Kaijo Corporation Wire bonding method, wire bonding apparatus, and wire bonding control program
US7748599B2 (en) * 2008-09-10 2010-07-06 Kaijo Corporation Wire bonding method, wire bonding apparatus, and wire bonding control program
US20100059574A1 (en) * 2008-09-10 2010-03-11 Kaijo Corporation Wire bonding method, wire bonding apparatus, and wire bonding control program
US20120139129A1 (en) * 2008-10-27 2012-06-07 Shinkawa Ltd. Wire bonding method and semiconductor device
US8815732B2 (en) * 2008-10-27 2014-08-26 Shinkawa Ltd. Wire bonding method and semiconductor device
US20120055976A1 (en) * 2010-01-27 2012-03-08 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
US8196803B2 (en) * 2010-01-27 2012-06-12 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
US20130220673A1 (en) * 2010-10-12 2013-08-29 Technische Universitaet Berlin Heavy-wire bond arrangement and method for producing same
US9992861B2 (en) * 2010-10-12 2018-06-05 Technische Universität Berlin Heavy-wire bond arrangement and method for producing same
US8941249B2 (en) * 2011-09-09 2015-01-27 Carsem (M) Sdn, Bhd. Low loop wire bonding
US20130307148A1 (en) * 2011-09-09 2013-11-21 Carsem (M) Sdn. Bhd. Low loop wire bonding
WO2014014643A1 (en) * 2012-07-17 2014-01-23 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures
US10153247B2 (en) 2012-07-17 2018-12-11 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures
US9502371B2 (en) 2012-07-17 2016-11-22 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures
US9865560B2 (en) 2012-07-17 2018-01-09 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures
US20150021376A1 (en) * 2013-07-17 2015-01-22 Freescale Semiconductor, Inc. Wire bonding capillary with working tip protrusion
US9093515B2 (en) * 2013-07-17 2015-07-28 Freescale Semiconductor, Inc. Wire bonding capillary with working tip protrusion
US9082753B2 (en) * 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US20150129646A1 (en) * 2013-11-12 2015-05-14 Invensas Corporation Off substrate kinking of bond wire
US20160225739A1 (en) * 2013-11-12 2016-08-04 Invensas Corporation Off substrate kinking of bond wire
US9087815B2 (en) * 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9893033B2 (en) * 2013-11-12 2018-02-13 Invensas Corporation Off substrate kinking of bond wire
US20150129647A1 (en) * 2013-11-12 2015-05-14 Invensas Corporation Severing bond wire by kinking and twisting
US9978713B2 (en) * 2014-02-10 2018-05-22 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
US20160351535A1 (en) * 2014-02-10 2016-12-01 Shinkawa Ltd. Method of manufacturing semiconductor device and wire bonding apparatus
WO2019232718A1 (en) * 2018-06-06 2019-12-12 Texas Instruments Incorporated Ball bond attachment for semiconductor die
US10692835B2 (en) 2018-06-06 2020-06-23 Texas Instruments Incorporated Ball bond attachment for a semiconductor die
CN111668124A (zh) * 2019-03-05 2020-09-15 先进科技新加坡有限公司 键合引线垂直互连部的形成
US11145620B2 (en) * 2019-03-05 2021-10-12 Asm Technology Singapore Pte Ltd Formation of bonding wire vertical interconnects
US20220208721A1 (en) * 2019-05-27 2022-06-30 Shinkawa Ltd. Wire bonding apparatus, method for manufacture of semiconductor device, and semiconductor device
US12417997B2 (en) * 2019-05-27 2025-09-16 Shinkawa Ltd. Wire bonding apparatus, method for manufacture of semiconductor device, and semiconductor device
US12107070B2 (en) * 2020-07-15 2024-10-01 Shinkawa Ltd. Wire bonding apparatus and method for manufacturing semiconductor device
CN114207790A (zh) * 2020-07-15 2022-03-18 株式会社新川 打线接合装置及半导体装置的制造方法
US20220328450A1 (en) * 2020-07-15 2022-10-13 Shinkawa Ltd. Wire bonding apparatus and method for manufacturing semiconductor device
TWI827950B (zh) * 2020-07-15 2024-01-01 日商新川股份有限公司 打線接合裝置及半導體裝置的製造方法
US20220199570A1 (en) * 2020-12-18 2022-06-23 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
US12057431B2 (en) * 2020-12-18 2024-08-06 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
US20240363583A1 (en) * 2020-12-18 2024-10-31 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
US12300663B2 (en) * 2020-12-18 2025-05-13 Kulicke And Soffa Industries, Inc. Methods of forming wire interconnect structures and related wire bonding tools
US12374653B2 (en) * 2021-06-07 2025-07-29 Shinkawa Ltd. Manufacturing method of semiconductor device and wire bonding apparatus
US20230282613A1 (en) * 2021-06-07 2023-09-07 Shinkawa Ltd. Manufacturing method of semiconductor device and wire bonding apparatus
US20240290746A1 (en) * 2023-02-24 2024-08-29 Texas Instruments Incorporated Ball bonding for semiconductor devices
US12538833B2 (en) * 2023-02-24 2026-01-27 Texas Instruments Incorporated Ball bonding for semiconductor devices

Also Published As

Publication number Publication date
JP4298665B2 (ja) 2009-07-22
TW200629447A (en) 2006-08-16
US20090194577A1 (en) 2009-08-06
KR100765376B1 (ko) 2007-10-10
TWI358096B (enExample) 2012-02-11
JP2006222128A (ja) 2006-08-24
US7934634B2 (en) 2011-05-03
KR20060090567A (ko) 2006-08-14

Similar Documents

Publication Publication Date Title
US7934634B2 (en) Wire bonding method
US7044357B2 (en) Bump formation method and wire bonding method
JP3913134B2 (ja) バンプの形成方法及びバンプ
JP2005159267A (ja) 半導体装置及びワイヤボンディング方法
KR20070044812A (ko) 낮은 루프 와이어 접합을 위한 방법 및 시스템
JP2005039192A (ja) 半導体装置及びワイヤボンディング方法
US7025247B2 (en) Wire bonding method
EP1367644A1 (en) Semiconductor electronic device and method of manufacturing thereof
US20080054052A1 (en) Method of manufacturing semiconductor device
JP4105996B2 (ja) ワイヤボンディング方法
US6270000B1 (en) Wire bonding method
JP2006302963A (ja) 半導体装置及び半導体装置の製造方法
JP4266369B2 (ja) ワイヤボンディング方法
KR100660821B1 (ko) 와이어본딩 방법
KR100808510B1 (ko) 와이어 본딩 방법
JP2000106381A (ja) 半導体装置の製造方法
JP4547405B2 (ja) ワイヤボンディング方法
KR20070062084A (ko) 범프 리버스 스티치 본딩 방법, 그를 이용한 칩 적층구조와 칩 적층 방법
JPH0536697A (ja) バンプ電極形成装置
JP2007266062A (ja) 半導体装置の製造方法
JP2712595B2 (ja) 半導体装置の接合方法
JPH0590320A (ja) ボール式ワイヤーボンデイング方法
JP2001007142A (ja) ワイヤボンディング用キャピラリおよび電子部品の接続方法
JP2007027498A (ja) 半導体装置の製造方法および製造装置
JPH1050752A (ja) 半導体装置および半導体装置の製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: KABUSHIKI KAISHA SHINKAWA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MII, TATSUNARI;TOYAMA, TOSHIHIKO;TEI, SHINSUKE;REEL/FRAME:017553/0317

Effective date: 20060201

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION