US20060063015A1 - Protected polymeric film - Google Patents
Protected polymeric film Download PDFInfo
- Publication number
- US20060063015A1 US20060063015A1 US10/948,013 US94801304A US2006063015A1 US 20060063015 A1 US20060063015 A1 US 20060063015A1 US 94801304 A US94801304 A US 94801304A US 2006063015 A1 US2006063015 A1 US 2006063015A1
- Authority
- US
- United States
- Prior art keywords
- layer
- polymeric film
- major surface
- inorganic barrier
- boron oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 111
- 230000004888 barrier function Effects 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 77
- 230000001681 protective effect Effects 0.000 claims abstract description 50
- 239000000872 buffer Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000010276 construction Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 6
- 230000035699 permeability Effects 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000002739 metals Chemical group 0.000 claims description 3
- 229920006267 polyester film Polymers 0.000 claims description 3
- 239000013522 chelant Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 190
- 239000010408 film Substances 0.000 description 95
- 239000000463 material Substances 0.000 description 26
- 229920000642 polymer Polymers 0.000 description 24
- 238000000576 coating method Methods 0.000 description 14
- -1 polyvinyl alcohols) Chemical class 0.000 description 14
- 229920002799 BoPET Polymers 0.000 description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 description 10
- 239000005020 polyethylene terephthalate Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 230000004927 fusion Effects 0.000 description 9
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 2
- BXPLEMMFZOKIHP-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-3-fluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=CC(=C(C#N)C#N)C=CC1=C(C#N)C#N BXPLEMMFZOKIHP-UHFFFAOYSA-N 0.000 description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910002796 Si–Al Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000013175 Crataegus laevigata Nutrition 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012963 UV stabilizer Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000008360 acrylonitriles Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229940043397 deconex Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012939 laminating adhesive Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical class O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical group O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003197 poly( p-chlorostyrene) Polymers 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
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- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
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- 150000003077 polyols Chemical class 0.000 description 1
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- 229920006380 polyphenylene oxide Polymers 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
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- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249982—With component specified as adhesive or bonding agent
- Y10T428/249983—As outermost component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
Definitions
- This invention relates to protected polymeric films and, more particularly, to polymeric films that have a reduced tendency to transmit moisture. This invention also relates to articles that incorporate such protected polymeric films.
- Polymeric films tend to transmit moisture (e.g., water vapor), which can be undesirable if the transmission of moisture is detrimental to components that are secured to or subsequently formed on the film.
- moisture e.g., water vapor
- organic electroluminescent devices may suffer reduced output or premature failure when exposed to moisture.
- Techniques have been developed to encapsulate and prolong the life of such devices, which may be sufficient if the device is formed on a glass substrate that is impermeable to moisture.
- it is desirable to form such devices on a polymeric film but such films tend to inherently transmit moisture.
- a protected polymeric film that exhibited low permeability to moisture would be especially useful, but despite intense industrial effort to develop such a film, only limited success has been attained so far.
- the present invention provides a protected polymeric film comprising a polymeric film substrate having a first major surface and a second major surface opposite the first major surface, and a protective structure that is provided on at least the first major surface of the substrate.
- the protective structure comprises a layer of boron oxide and an inorganic barrier layer.
- the layer of boron oxide may be disposed on the first major surface of the substrate with the inorganic barrier layer disposed over the layer of boron oxide.
- the inorganic barrier layer may be disposed on the first major surface of the substrate with the layer of boron oxide disposed over the inorganic barrier layer.
- a second protective structure also comprising a layer of boron oxide and an inorganic barrier layer
- the expressions “disposed on” and “disposed over” are not meant to suggest that direct, intimate contact is required between the layers that are in this relationship, but instead are relative terms of position.
- the inorganic barrier layer cooperates with the first major surface of the substrate to encapsulate the layer of boron oxide.
- the protective structure further comprises a second inorganic barrier layer. The layer of boron oxide may then be disposed between, and optionally be encapsulated by, the two inorganic barrier layers.
- the inorganic barrier layer preferably comprises an inorganic oxide, boride, nitride, carbide, oxynitride, oxyboride, or oxycarbide, such as silicon oxides, nitrides or carbides; diamond-like carbon layers; and metals such as silicon, aluminum or combinations thereof. Specific examples include silicon oxide (monoxide or dioxide), silicon nitride, aluminum oxide or silicon aluminum oxide.
- the inorganic barrier layer may be a multilayer construction comprising, for example, alternating polymeric and inorganic layers. In some instances, the inorganic barrier layer has low moisture permeability.
- Protected polymeric films according to the invention may further, and optionally, comprise a buffer layer such as an organometallic compound or a chelate compound.
- the inorganic barrier layer may be disposed on the first major surface of the substrate, the layer of boron oxide may be disposed over the inorganic barrier layer, and the buffer layer may be disposed over the layer of boron oxide.
- the protective structures reduce the inherent, but potentially undesirable, tendency of polymeric films to transmit moisture.
- the protected polymeric films of the invention provide a good support on which an electroluminescent assembly (e.g., comprising a first electrode, a second electrode, and a light emitting structure disposed between the first and second electrodes) may be subsequently formed or attached.
- the electroluminescent assembly may be disposed on the surface of the polymeric film carrying the protective structure (either underneath it or over it), or on the opposite surface of the polymeric film.
- the present invention provides a method for reducing the transmission of moisture by a polymeric film by applying a protective structure, such as those described above, to at least a first major surface of the polymeric film.
- FIG. 1 is a schematic sectional view of a first embodiment of a protected polymeric film according to the invention
- FIG. 2 is a schematic sectional view of a second embodiment of a protected polymeric film according to the invention.
- FIG. 3 is a schematic sectional view of a third embodiment of a protected polymeric film according to the invention.
- FIG. 4 is a schematic sectional view of a fourth embodiment of a protected polymeric film according to the invention.
- FIG. 5 is a schematic sectional view of a fifth embodiment of a protected polymeric film according to the invention.
- FIG. 6 is a schematic sectional view of a sixth embodiment of a protected polymeric film according to the invention.
- the invention provides a protected polymeric film comprising a polymeric film substrate having a first major surface and a second major surface opposite the first major surface, and a protective structure that is provided on at least the first major surface of the substrate.
- the protective structure comprises a layer of boron oxide and an inorganic barrier layer. Other layers may be optionally included in the protective structure, on the polymeric film substrate, or both.
- the protected polymeric films of the invention can be used to inhibit the transmission of moisture in a variety of applications. They are especially useful as substrates for use with organic electronic devices such as organic electroluminescent devices, organic transistors, liquid crystal displays, and other electronic components.
- a “protected polymeric film” refers to a polymeric film substrate that has been provided with a protective structure as described herein, and a “protective structure” refers to the layer of boron oxide and the inorganic barrier layer that have been provided on the polymeric film substrate.
- Polymeric film substrates tend to transmit, or otherwise be permeable to moisture, which is undesirable if the transmission of moisture by the substrate is detrimental to components that are secured to or subsequently formed on the substrate.
- a “protected polymeric film” more specifically refers to a polymeric film substrate that has a reduced ability to transmit moisture relative to the same polymeric film substrate that does not have the protective structure.
- a “protective structure” more specifically refers to a layered assembly comprising the layer of boron oxide and the inorganic barrier layer, and which reduces the undesirable, but inherent, tendency of a polymeric film to transmit moisture relative to the same polymeric film that does not have the protective structure.
- the protective structure is preferably adapted to reduce, often substantially, the inherent tendency of a polymeric film to transmit moisture through the surface(s) to which the protective structure has been applied.
- the protective structure results in protected polymeric films that have sufficiently low moisture permeability to make them useful for encapsulating at least the anode, cathode and organic electronic layers of organic electronic devices.
- Encapsulating means surrounding or enclosing the exposed moisture sensitive surfaces of these layers.
- Organic electronic devices typically require protection from moisture in excess of the levels that can be measured by commercially available equipment such as that provided by MOCON (Modem Controls, Minneapolis, Minn.). While MOCON equipment is typically capable of measuring moisture permeation rates as low as 5 ⁇ 10 ⁇ 4 grams/square meter/day (g/m 2 /day), permeation rates as low as 1 ⁇ 10 ⁇ 6 g/m 2 /day have been described as a desirable target.
- low moisture permeability more preferably means a moisture permeation rate of less than 5 ⁇ 10 ⁇ 4 g/m 2 /day, more preferably less than 1 ⁇ 10 ⁇ 5 g/m 2 /day, even more preferably less than 1 ⁇ 10 ⁇ 6 g/m 2 /day as measured pursuant to ASTM Test Method F-1249.
- FIG. 1 shows a protected polymeric film 10 comprising a polymeric film substrate 12 having a first major surface 12 a and a second major surface 12 b opposite the first major surface 12 a.
- a protective structure 14 is provided on at least the first major surface 12 a of substrate 12 .
- Protective structure 14 comprises a layer of boron oxide 16 and an inorganic barrier layer 18 .
- boron oxide layer 16 and inorganic barrier layer 18 it is preferred that there be no intervening layers between boron oxide layer 16 and inorganic barrier layer 18 as this too could impair the ability of protective structure 14 to reduce the transmission of moisture by substrate 12 .
- FIG. 1 illustrates boron oxide layer 16 as being intermediate substrate 12 and inorganic barrier layer 18 ; however, the relative position of these two layers could be reversed such that inorganic barrier layer 18 is intermediate substrate 12 and boron oxide layer 16 .
- Preferred are those constructions in which the inorganic barrier layer and the boron oxide layer are arranged such that encroaching moisture encounters the inorganic barrier layer before encountering the boron oxide layer.
- Substrate 12 is a polymeric film.
- film is meant a material having length and width dimensions that are substantially greater than the material's thickness. Included within the concept of a “film” are a tape, a ribbon and a roll, which generally describe a material that also has a length dimension that is substantially greater than its width, the width also being substantially greater than the thickness. Such materials are often provided with a central core about which the material is wrapped in multiple windings so as to facilitate processing steps during which the protective structure is applied to the substrate (e.g., in roll-to-roll production), additional manufacturing operations, or post-processing handling, storage and shipping.
- a “film” is a sheet, page or panel, which generally describe a material that has length and width dimensions that are more nearly equal. Such materials are often handled in a stack of multiple individual layers that facilitate processing steps during which the protective structure is applied to the substrate in a sheet-fed or a similar sheeting type operation.
- polymeric refers to homopolymers and copolymers, as well as homopolymers or copolymers that may be formed in a miscible blend, for example, by coextrusion or by reaction, including, e.g., transesterification.
- copolymer describes materials that are derived from two or more different monomeric units and includes random, block and graft copolymers.
- Polymers suitable for providing substrate 12 may be any of a number of known polymers such as thermoset (crosslinked), thermosettable (crosslinkable), or thermoplastic polymers that are capable of being formed into a film, including acrylates (including methacrylates such as polymethylmethacrylate), polyols (including polyvinyl alcohols), epoxy resins, silanes, siloxanes (with all types of variants thereof), polyvinyl pyrrolidones, polyimides, polyamides, poly (phenylene sulphide), polysulfones, phenol-formaldehyde resins, cellulose ethers and esters (for example, cellulose acetate, cellulose acetate butyrate, etc.), nitrocelluloses, polyurethanes, polyesters (for example, poly (ethylene terephthalate), poly (ethylene naphthalate)), polycarbonates, polyolefins (for example, polyethylene, polypropylene, polychloroprene, polyisobutylene
- substrate 12 may have a visible light transmission, for example a transmission of at least about 70%, at a visible light wavelength of interest.
- the substrate may be oriented, biaxially oriented and/or heat-stabilized.
- the thickness of substrate 12 is largely dictated by the intended application for the protected polymeric film, but for many uses a thickness of about 0.01 to 1 mm, more preferably about 0.05 to 0.25 mm is quite useful.
- protective structure 14 comprises a layer of boron oxide 16 and an inorganic barrier layer 18 .
- boron oxide 16 may be deposited on or otherwise applied to the polymeric film substrate as an optically clear or transparent glass-like material, which may be advantageous for applications where this layer needs to be transmissive to light such as in an organic electroluminescent device.
- the boron oxide layer may reduce the inherent tendency of a polymeric film substrate to transmit moisture, whether emanating from the ambient environment or from components formed on or attached to the substrate.
- the boron oxide functions as a desiccant, scavenging moisture by reacting with it to yield boric acid, a relatively weak acid the solid form of which is not likely to be detrimental to many of the components that may be formed on or attached to the substrate.
- boric acid a relatively weak acid the solid form of which is not likely to be detrimental to many of the components that may be formed on or attached to the substrate.
- This can be represented by the reaction of one molecule of boron oxide with three molecules of water, B 2 O 3 +3H 2 O ⁇ 2B(OH) 3 . Additional reaction products in the form of evolved gasses or liquids are not liberated.
- Boron oxide also offers certain processing advantages that may be desirable depending upon the application.
- boron oxide may be applied to the polymeric film substrate by several techniques including sputtering, chemical vapor deposition, electron beam deposition, and thermal evaporation (e.g., vapor deposition).
- Vapor deposition is a preferred method when the target surface is susceptible to damage from more energetic application methods such as sputtering.
- boron oxide can be vapor deposited at an acceptable rate under moderate conditions (e.g., deposition rates of about 10 to 50 ⁇ /sec may be achieved under a vapor pressure of about 10 ⁇ 6 to 10 ⁇ 4 Torr), without showing signs of decomposition (e.g., discoloration of the source material).
- Boron oxide layer 16 is provided on that portion of polymeric film substrate 12 that is intended to be protected against moisture transmission and will be determined by the individual application.
- the thickness of boron oxide layer 16 will also vary substantially depending upon the nature of the application for protected polymeric film 10 , moisture conditions to which the protected polymeric film is likely to be exposed during use, other layers present in protective structure 14 , requirements for optical transparency and mechanical flexibility of the protected polymeric film, cost, etc. As layer thickness increases, resistance to moisture transmission will increase, but perhaps at the expense of reduced transparency, reduced flexibility, and increased cost.
- boron oxide layer 16 is provided at an effective thickness, by which is meant a thickness sufficient to reduce the undesirable, but inherent, tendency of a polymeric film to transmit moisture relative to the same polymeric film that does not have the boron oxide layer. More specifically, the boron oxide layer is preferably provided at a thickness of about 50 ⁇ to 10,000 ⁇ , more preferably about 500 ⁇ to 5,000 ⁇ , and even more preferably about 3,000 ⁇ to 5,000 ⁇ .
- protective structure 14 also comprises inorganic barrier layer 18 , which cooperates with boron oxide layer 16 to protect polymeric film substrate 12 .
- Inorganic barrier layer 18 may provide protection against exposure to moisture, oxygen, and heat and/or mechanical impact, although it is most often included as a moisture and/or oxygen barrier. In this capacity, it is preferred that inorganic barrier layer 18 be selected to result in a polymeric film having low moisture permeability. It is also preferred that inorganic barrier layer 18 not be reactive with boron oxide layer 16 , polymeric film substrate 12 , other layers adjacent to the inorganic barrier layer, and any components formed on or attached to the polymeric film substrate. In certain applications it may be desirable for inorganic barrier layer 18 to be deposited or otherwise applied as an optically clear or transparent material, which may be advantageous for applications where this layer needs to be transmissive to light such as in an organic electroluminescent device.
- inorganic barrier layer materials include metals, metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, metal oxycarbides, and combinations thereof, e.g., silicon oxides such as silica, aluminum oxides such as alumina, titanium oxides such as titania, indium oxides, tin oxides, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, boron carbide, tungsten carbide, silicon carbide, aluminum nitride, silicon nitride, boron nitride, aluminum oxynitride, silicon oxynitride, silicon oxycarbide, boron oxynitride, zirconium oxyboride, titanium oxyboride, and combinations thereof. Indium tin oxide, silicon oxide, aluminum oxide and combinations thereof are especially preferred inorganic barrier materials.
- the inorganic barrier layer may be applied or formed using techniques employed in the film metallizing art such as sputtering (e.g., cathode or planar magnetron sputtering), evaporation (e.g., resistive or electron beam evaporation), chemical vapor deposition, plating and the like.
- Materials suitable for inorganic barrier layer 18 depend partly on the protective function that it is intended to play, but glass and inorganic oxides (e.g., oxides of silicon, aluminum or combinations thereof, such as silicon monoxide, silicon dioxide, aluminum oxide or silicon aluminum oxide) are quite useful.
- Further examples of inorganic barrier layers useful in this invention include materials fabricated using Plasma Enhanced Chemical Vapor Deposition (PE-CVD), such as those described in U.S. Pat. No. 6,696,157 (David).
- PE-CVD Plasma Enhanced Chemical Vapor Deposition
- inorganic barrier layer 18 may be provided by a multilayer construction comprising, for example, alternating polymeric and inorganic layers.
- the inorganic layers may be provided by any of the materials noted above for the inorganic barrier layer, and the polymeric layers may be, for example, (meth)acrylates, polyesters, fluorinated polymers, parylenes, cyclotenes, or polyalkylenes.
- Multilayer constructions may be prepared by way of a “PML” (i.e., polymer multilayer) process, or other techniques in which the layers are applied, as appropriate, by sputtering, spin-coating, thermal evaporation, chemical vapor deposition, etc. Suitable examples of multilayer constructions are described in, for example, U.S.
- inorganic barrier layer 18 will also vary substantially depending upon the nature of the application for protected polymeric film 10 , moisture/air conditions to which the protected polymeric film is likely to be exposed during use, other layers present in protective structure 14 , requirements for optical transparency and mechanical flexibility of the protected polymeric film, cost, etc. As layer thickness increases, resistance to moisture transmission will increase, but perhaps at the expense of reduced transparency, reduced flexibility, and increased cost.
- inorganic barrier layer 18 is provided at an effective thickness, by which is meant a thickness sufficient to increase the ability of the polymeric film to resist transmission of moisture, resist thermal and/or mechanical impact, etc. relative to the same polymeric film that does not have a protective structure that includes the inorganic barrier layer. More specifically, the inorganic barrier layer is preferably provided at a thickness of about 0.5 ⁇ m to 70 ⁇ m, more preferably about 1.5 ⁇ m to 40 ⁇ m, and even more preferably about 3.5 ⁇ m to 30 ⁇ m.
- the embodiment of protected polymeric film 10 shown in FIG. 1 where boron oxide layer 16 is intermediate inorganic barrier layer 18 and polymeric film substrate 12 (i.e., encroaching moisture encounters the inorganic barrier layer before encountering the boron oxide layer), offers certain advantages.
- This arrangement permits boron oxide layer 16 to be deposited in an essentially continuous layer, but without the need to rigorously avoid forming pinholes and other similar defects that frequently accompany vapor deposition and other processes because inorganic barrier layer 18 also resists moisture transmission and is the layer that first encounters encroaching moisture (relative to the boron oxide layer).
- This arrangement also permits boron oxide layer 16 to provide a “last line of defense” in reducing moisture transmission by polymeric film substrate 12 .
- FIG. 2 another embodiment of a protected polymeric film 10 is illustrated which is similar to the embodiment of FIG. 1 , but offering the further advantage that inorganic barrier layer 18 encapsulates or seals lateral side edges 16 a and 16 b of boron oxide layer 16 so as to additionally protect this layer from being exposed to moisture at its edges.
- This embodiment may be particularly useful in higher moisture environments or where the boron oxide layer 16 is to be made available to only resist the transmission of moisture that has penetrated inorganic barrier layer 18 .
- the embodiment of FIG. 3 is similar to the embodiment of FIG. 1 but further comprises a second inorganic barrier layer 20 that is disposed between boron oxide layer 16 and polymeric film substrate 12 .
- Second inorganic barrier layer 20 is similar to inorganic barrier layer 18 , and the foregoing discussion of inorganic barrier layer 18 is applicable to second inorganic barrier layer 20 .
- the embodiment of FIG. 3 offers the additional advantage of giving enhanced protection to polymeric film substrate 12 as a result of second inorganic barrier layer 20 .
- the embodiment of FIG. 4 is similar to the embodiment of FIG. 2 but further comprises a second inorganic barrier layer 20 like that shown in FIG. 3 .
- inorganic barrier layers 18 and 20 cooperate to encapsulate or seal boron oxide layer 16 so as to additionally protect this layer from being exposed to moisture at its edges.
- a buffer layer refers to a layer that separates the protective structure from components or other layers that are secured to or subsequently formed on the substrate, such components or layers being generically represented by reference numeral 24 in FIG. 5 .
- the buffer layer may provide a wide variety of possible functions, depending upon the use to which the protected polymeric film is put.
- the buffer layer may provide a smooth surface on which components or other layers may be secured or subsequently formed. It may provide an anchoring or priming layer that improves the adhesion of subsequently formed or secured components or layers.
- the buffer layer may protect any subsequently formed or secured components or layers from reaction with the inorganic barrier layer or the boron oxide layer.
- the buffer layer may perform an optical function, and may be electrically active.
- the buffer layer may be formed from a wide variety of materials, both organic and inorganic, and the actual selection will be influenced by the particular function or functions that the buffer layer is intended to serve. For example, if electronic components, or layers that form a portion of an electronic component, will be formed on or secured to the polymeric film substrate, materials that are not oxidizing agents, not hygroscopic, not acidic, and that are non-reactive with the electronic components or layers might be preferred.
- protected polymeric films according to the invention are useful as substrates for supporting organic electronic components, including organic electroluminescent devices (e.g., organic light emitting diodes), etc.
- the buffer layer may be formed of materials used to provide any of the electrically active layers in such components, such as copper phthalocyanine (CuPc), 4,4′,4′′-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (MTDATA), N,N′-bis(3-naphthalen-2-yl)-N,N′-bis(phenyl)benzidine (NPD), tris(8-hydroxyquinoline) aluminum (ALQ), gold, silicon monoxide, etc.
- CuPc copper phthalocyanine
- MTDATA 4,4′,4′′-tris(N-3-methylphenyl-N-phenylamino)triphenylamine
- NPD N,N′-bis(3-naphthalen-2-yl)-N,N′-bis(phenyl)
- the thickness of the buffer layer also depends on the function that the buffer layer is intended to serve, but thicknesses in the range of about 500 ⁇ to 2,000 ⁇ have generally been found to be useful.
- FIG. 6 illustrates an embodiment in which both first major surface 12 a and second major surface 12 b of polymeric film substrate 12 have been provided with a protective structure 14 comprising a layer of boron oxide 16 and an inorganic barrier layer 18 .
- the embodiment of FIG. 6 further includes a second inorganic barrier layer 20 associated with each protective structure, although it will be understood that the second inorganic barrier layer is optional and may be excluded from one or both protective structures.
- FIG. 6 shows each layer of boron oxide 16 as having been encapsulated by the inorganic barrier layers, this is only optional.
- various functional layers or coatings can be added to the protected polymeric films of the invention to alter or improve their physical or chemical properties, particularly at the surface of the film.
- Such layers or coatings may include, for example, visible light-transmissive conductive layers or electrodes (e.g., of indium tin oxide); antistatic coatings or films; flame retardants; UV stabilizers; abrasion resistant or hardcoat materials; optical coatings or filters; anti-fogging materials; magnetic or magneto-optic coatings or films; photographic emulsions; prismatic films; holographic films or images; adhesives such as pressure sensitive adhesives or hot melt adhesives; primers to promote adhesion to adjacent layers; and low adhesion backsize materials for use when the barrier assembly is to be used in adhesive roll form.
- These functional components can be incorporated into one or more of the outermost layers of the barrier assembly or can be applied as a separate film or coating.
- An OLED device incorporating a protected polymeric film according to the invention was prepared in Example 1.
- a UV-curable solution was prepared by combining 80 grams Ebecryl 629, 20 grams SR399, and 2 grams Irgacurel 84 that had been dissolved in 1000 grams of MEK.
- the resulting solution was coated onto a roll of 6.5 inch wide HSPE 100 PET film substrate using a CAG 150 microgravure coater operating at 20 ft/min.
- the coating was subsequently in-line dried at 70° C. and then cured under a nitrogen atmosphere with a Fusion D UV Lamp operating at 100% power. This resulted in a transparent PET film substrate having an approximately 0.7 ⁇ m thick transparent coating thereon.
- a polymer web mask commercially available from 3M Company under the trade designation Scotchpak 1220 was die cut and then thermally laminated to the coated surface of the PET film substrate using a roll-to-roll laminator.
- An approximately 35 nm thick layer of ITO, followed by an approximately 10 nm thick layer of Ag, followed by another approximately 35 nm thick layer of ITO were sequentially deposited on the coated surface of the PET film substrate using a DC sputtering process employing a pressure of 1 mTorr, 1 kW of power, and argon and oxygen flow rates of 150 sccm and 6 sccm, respectively, for coating the ITO, and an argon flow rate of 150 sccm for coating the Ag.
- These coating conditions resulted in a sheet resistance of 10 ohms/square.
- the ITO layers served as anodes and as robust contacts for the cathodes for the subsequently formed OLED devices.
- the polymer mask was then peeled off resulting in a conductive pattern on the PET film substrate.
- a sample of the conductive patterned substrate measuring 50 mm ⁇ 50 mm was cut from the roll and contained four pixels each measuring 0.25 cm 2 .
- the sample was ultrasonically cleaned by sonication in a warm (about 110° F.) detergent solution (Deconex 12 NS, Borer Chemie, Zuchwil, Switzerland) for about 5 minutes, rinsing in warm (about 110° F.) deionized water for about 10 min, and drying in a nitrogen purged oven for at least 4 hours.
- a warm (about 110° F.) detergent solution Deconex 12 NS, Borer Chemie, Zuchwil, Switzerland
- the ITO/Ag/ITO surface was then plasma treated for 2 minutes at a pressure of 300 mTorr, oxygen flow rate of 500 sccm, and RF power of 400 watts in a plasma treater commercially available from AST, Inc., Billerica, Mass., under the trade designation Model PS 500.
- a hole-injecting layer (MTDATA:FTCNQ (2.8% doping) was vapor deposited at a rate of 1.8 ⁇ /s to a thickness of 3,000 ⁇ on top of the conductive pattern on the PET film substrate.
- a green emitting OLED stack was then vapor deposited on top of the hole-injecting layer using thermal evaporation in a vacuum chamber at about 5 ⁇ 10 ⁇ 6 Torr.
- the OLED stack was provided by the following sequential depositions over the hole-injecting layer: NPD (400 ⁇ , 1 ⁇ /s)/AlQ:C545T(1% doping, 300 ⁇ , 1 ⁇ /s)/AlQ(200 ⁇ , 1 ⁇ /s)/LiF(7 ⁇ , 0.5 ⁇ /s)/Al(2500 ⁇ , 25 ⁇ /s).
- OLED devices were then encapsulated by depositing 3,000 ⁇ of B 2 O 3 on top of the device structure layers using thermal evaporation (about 3-5 ⁇ /s) from a tungsten dimple source (S8A-0.010W, R. D. Mathis, Signal Hill, Calif.)
- a 2 mil thick protective copper foil was then thermally laminated at a temperature of approximately 80° C. using a hand-operated rubber roller on top of the B 2 O 3 layer and with Thermo-bond 845-EG-2.5.
- the copper foil was large enough to encapsulate the emitting areas of the four pixels, but the edges of the PET film substrate remained exposed to provide a point for electrical contact. For convenience, this is referred as “OLED Device A.”
- Device efficiencies for OLED Device A were measured using a photo-optically corrected silicon photodiode (UDT Sensors, Hawthorne, Calif.).
- a 3,000 ⁇ thick layer of B 2 O 3 was deposited on the surface of the PET film substrate opposite the surface on which the device structure had been deposited and using the deposition conditions described above for the previously applied B 2 O 3 layer.
- a multilayer inorganic barrier layer was then prepared by laminating a pair of multilayer assemblies in face-to-face fashion with an optical adhesive. Each assembly comprised six alternating layers of polymer and inorganic material formed on a PET base.
- the laminated multilayer inorganic barrier had the following construction: PET base/Polymer 1/SiAlO/Polymer 2/SiAlO/Polymer 2/SiAlO/Optical Adhesive/SiAlO/Polymer 2/SiAlO/Polymer 2/SiAlO/Polymer 1/PET base. Each assembly was formed as described in the following paragraphs.
- PET base+Polymer 1 (“Layer 1”).
- HSPE 50 PET base film was coated with a UV-curable solution that was prepared by mixing 145.5 grams Ebecryl 629, 37.5 grams ⁇ -CEA, and 9.03 grams Irgacure 184 that had been dissolved in 972 grams MEK using a CAG-150 microgravure coater operating at 6.1 m/min. The coating was cured using a Fusion H UV Lamp running at 100% power to provide Polymer 1.
- SiAlO Layer (“Layer 2”).
- the PET base film coated with Polymer 1 i.e., Layer 1 was then loaded into a roll-to-roll sputter coater and the deposition chamber was pumped down to a pressure of 2 ⁇ 10 ⁇ 6 Torr.
- a 60 nm thick SiAlO inorganic oxide layer was deposited atop Polymer 1 by reactively sputtering a Si-Al target (90%-10% Si—Al target commercially available from Academy Precision Materials, Albuquerque, N.M.) using 2 kW and 600V, a gas mixture containing 51 sccm argon and 30 sccm oxygen at a pressure of 1 mTorr, and a web speed of 0.43 m/min.
- Polymer 2 (“Layer 3”). Using the conditions described for the application and curing of Polymer 1 but with the CAG 150 microgravure coater operating at a speed of 4.6 m/min, the previously applied SiAlO layer was overcoated with a UV-curable solution that was prepared by combining 2.25 grams UVI-6974, 42.75 grams EHPE3150 in 405 grams MEK, and then cured to provide Polymer 2.
- a second SiAlO layer was deposited atop Layer 3 to form Layer 4
- a second layer of Polymer 2 was coated atop Layer 4 to form Layer 5
- a third layer of SiAlO was deposited atop Layer 5 to form Layer 6, thereby providing an assembly having a PET base/Polymer 1/SiAlO/Polymer 2/SiAlO/Polymer 2/SiAlO configuration.
- the resulting assembly was split into two rolls and laminated together in face-to-face fashion using 8141 Adhesive and a two-roll laminator to form a multilayer inorganic barrier.
- the multilayer inorganic barrier was then laminated to the exposed B 2 O 3 layer with 8141 Adhesive thereby completing the incorporation of a protected polymeric film into OLED device A.
- Device efficiencies were measured again and using the same procedure as employed previously. Incorporating a protected polymeric film according to the invention into OLED Device A did not significantly change the efficiency of the resulting device.
- OLED Device B An OLED device incorporating a protected polymeric film according to the invention was prepared in Example 2. Additional samples of OLED Device A from Example 1 were prepared and the copper foil was edge sealed using a thin bead of epoxy (Araldite 2014 available from Huntsman LLC, Advanced Materials Division, Vantico, East Lansing, Mich.). The epoxy was allowed to cure to hardness over 12 hours in a N 2 atmosphere at room temperature. For convenience, this is referred to as “OLED Device B.”
- An inorganic barrier layer was then prepared according to the following procedure.
- a UV-curable polymer solution was prepared by combining 2.25 grams UVI-6974 with 42.75 grams EHPE3150 in 405 grams MEK.
- the resulting solution was coated onto a 6.5 inch wide, 100 micron thick fluorine polyester film commercially available from Ferrania Imaging Technologies, Italy, under the trade designation Arylite using a CAG 150 microgravure coater operating at a speed of 15 ft/min.
- the coating was subsequently in-line dried at 70° C. and then cured under a nitrogen atmosphere with a Fusion D UV Lamp operating at 100% power. This resulted in a transparent film having an approximately 0.7 ⁇ m thick transparent coating thereon.
- the coated film was loaded into a sputter coater and the deposition chamber was pumped down to a pressure of 2 ⁇ 10 ⁇ 6 Torr.
- a 60 nm thick SiAlO inorganic oxide layer was deposited using 370 W and 375 V, a gas mixture containing 20 sccm argon and 18 sccm oxygen at a pressure of 6 mTorr, and a web speed of 7 inches/minute.
- a 90/10 target of Si/Al available from Applied Precision Materials, Albuquerque, N.M. was used as the target material.
- Inorganic barrier layers were then incorporated into previously prepared samples of OLED Device B to form, respectively, OLED Device B1 and OLED Device B2.
- OLED Device B1 was prepared by depositing a 3,000 ⁇ thick layer of B 2 O 3 on the surface of the PET film substrate opposite the surface on which the device structure had been built.
- the B 2 O 3 was deposited using thermal evaporation ( ⁇ 3-5 ⁇ /second) from a tungsten dimple source (S8A-0.010W, R.D. Mathis, Signal Hill, Calif.).
- S8A-0.010W tungsten dimple source
- OLED Device B2 was prepared by laminating the previously prepared inorganic barrier layer to the “front side” surface of the PET film substrate (i.e., the surface opposite the surface on which the device structure had been build) by using 8141 Adhesive and a roll-to-roll laminator. Thus, OLED Device B2 differed from OLED Device B1 in that it lacked the B 2 O 3 layer used on the front side of OLED Device B1.
- the samples were stored under ambient conditions. Photographs of the lit devices (i.e., OLED Device B1 and OLED Device B2) were taken periodically to compare dark spot growth. Samples of OLED Device B2 (i.e., without B 2 O 3 on the front side) showed significantly more dark spot growth over time than samples of OLED Device B1 having the B 2 O 3 layer on the front side.
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Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/948,013 US20060063015A1 (en) | 2004-09-23 | 2004-09-23 | Protected polymeric film |
JP2007533479A JP4971167B2 (ja) | 2004-09-23 | 2005-08-22 | 保護されたポリマーフィルム |
BRPI0515578-9A BRPI0515578A (pt) | 2004-09-23 | 2005-08-22 | filme polimérico protegido, dispositivo eletroluminescente orgánico protegido, e, método para reduzir a transmissão de umidade por um filme polimérico |
SG200906946-9A SG156654A1 (en) | 2004-09-23 | 2005-08-22 | Protected polymeric film |
KR1020077008993A KR101217443B1 (ko) | 2004-09-23 | 2005-08-22 | 보호된 중합체성 필름 |
PCT/US2005/029905 WO2006036393A2 (en) | 2004-09-23 | 2005-08-22 | Protected polymeric film |
CNA2005800321995A CN101027798A (zh) | 2004-09-23 | 2005-08-22 | 受保护的聚合物膜 |
EP20050788822 EP1805819A2 (de) | 2004-09-23 | 2005-08-22 | Geschützter polymerfilm |
TW94130724A TWI462358B (zh) | 2004-09-23 | 2005-09-07 | 經保護之聚合膜 |
US12/136,835 US7468211B2 (en) | 2004-09-23 | 2008-06-11 | Protected polymeric film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/948,013 US20060063015A1 (en) | 2004-09-23 | 2004-09-23 | Protected polymeric film |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/136,835 Continuation US7468211B2 (en) | 2004-09-23 | 2008-06-11 | Protected polymeric film |
Publications (1)
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US20060063015A1 true US20060063015A1 (en) | 2006-03-23 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/948,013 Abandoned US20060063015A1 (en) | 2004-09-23 | 2004-09-23 | Protected polymeric film |
US12/136,835 Expired - Fee Related US7468211B2 (en) | 2004-09-23 | 2008-06-11 | Protected polymeric film |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US12/136,835 Expired - Fee Related US7468211B2 (en) | 2004-09-23 | 2008-06-11 | Protected polymeric film |
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US (2) | US20060063015A1 (de) |
EP (1) | EP1805819A2 (de) |
JP (1) | JP4971167B2 (de) |
KR (1) | KR101217443B1 (de) |
CN (1) | CN101027798A (de) |
BR (1) | BRPI0515578A (de) |
SG (1) | SG156654A1 (de) |
TW (1) | TWI462358B (de) |
WO (1) | WO2006036393A2 (de) |
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Also Published As
Publication number | Publication date |
---|---|
TW200617073A (en) | 2006-06-01 |
BRPI0515578A (pt) | 2008-07-29 |
CN101027798A (zh) | 2007-08-29 |
WO2006036393A3 (en) | 2006-10-05 |
SG156654A1 (en) | 2009-11-26 |
EP1805819A2 (de) | 2007-07-11 |
WO2006036393A2 (en) | 2006-04-06 |
TWI462358B (zh) | 2014-11-21 |
KR20070058634A (ko) | 2007-06-08 |
US7468211B2 (en) | 2008-12-23 |
JP4971167B2 (ja) | 2012-07-11 |
US20080241506A1 (en) | 2008-10-02 |
JP2008513256A (ja) | 2008-05-01 |
KR101217443B1 (ko) | 2013-01-02 |
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