US20050168102A1 - Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator - Google Patents
Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator Download PDFInfo
- Publication number
- US20050168102A1 US20050168102A1 US10/909,335 US90933504A US2005168102A1 US 20050168102 A1 US20050168102 A1 US 20050168102A1 US 90933504 A US90933504 A US 90933504A US 2005168102 A1 US2005168102 A1 US 2005168102A1
- Authority
- US
- United States
- Prior art keywords
- underlayer
- electrode layer
- region
- resonator
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 238000009499 grossing Methods 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910003781 PbTiO3 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/602,330 US7408287B2 (en) | 2004-02-04 | 2006-11-21 | Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004027590A JP4625260B2 (ja) | 2004-02-04 | 2004-02-04 | 薄膜バルク共振子の製造方法 |
| JP2004-027590 | 2004-02-04 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/602,330 Division US7408287B2 (en) | 2004-02-04 | 2006-11-21 | Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20050168102A1 true US20050168102A1 (en) | 2005-08-04 |
Family
ID=34805884
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/909,335 Abandoned US20050168102A1 (en) | 2004-02-04 | 2004-08-03 | Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
| US11/602,330 Expired - Fee Related US7408287B2 (en) | 2004-02-04 | 2006-11-21 | Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/602,330 Expired - Fee Related US7408287B2 (en) | 2004-02-04 | 2006-11-21 | Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20050168102A1 (ja) |
| JP (1) | JP4625260B2 (ja) |
Cited By (13)
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| US20050099092A1 (en) * | 2003-11-07 | 2005-05-12 | Hiroyuki Nakamura | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
| US20100052476A1 (en) * | 2007-11-21 | 2010-03-04 | Panasonic Corporation | Piezoelectric filter and method for manufacturing the same |
| US20160339475A1 (en) * | 2015-05-20 | 2016-11-24 | uBeam Inc. | Transducer array subdicing |
| CN109889174A (zh) * | 2019-02-20 | 2019-06-14 | 中国科学院微电子研究所 | 一种谐振器及其制作方法 |
| CN111082777A (zh) * | 2019-12-31 | 2020-04-28 | 诺思(天津)微系统有限责任公司 | 底电极为空隙电极的体声波谐振器、滤波器及电子设备 |
| CN111130486A (zh) * | 2019-12-11 | 2020-05-08 | 北京汉天下微电子有限公司 | 一种薄膜体声波谐振器结构及其制造方法、滤波器以及双工器 |
| CN111277240A (zh) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | 一种薄膜体声波滤波器的膜层结构及其制备方法 |
| CN112601169A (zh) * | 2020-12-15 | 2021-04-02 | 武汉大学 | 一种宽频带高灵敏度谐振式压电mems麦克风 |
| CN112886940A (zh) * | 2021-01-13 | 2021-06-01 | 武汉大学 | 一种易于集成的fbar滤波器 |
| CN113612463A (zh) * | 2021-06-30 | 2021-11-05 | 中国电子科技集团公司第十三研究所 | 阶梯型薄膜体声波谐振器滤波器及滤波器组件 |
| CN114160399A (zh) * | 2021-12-02 | 2022-03-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 同频异构的压电超声波换能器及其制备方法 |
| WO2022052915A1 (zh) * | 2020-09-09 | 2022-03-17 | 诺思(天津)微系统有限责任公司 | 滤波器组件及其制造方法、电子设备 |
| CN116248068A (zh) * | 2022-09-28 | 2023-06-09 | 泰晶科技股份有限公司 | 一种超高频at切石英晶片及制造工艺 |
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| JP5128077B2 (ja) * | 2006-02-21 | 2013-01-23 | 宇部興産株式会社 | 薄膜圧電共振器とそれを用いた薄膜圧電フィルタ |
| JP5027534B2 (ja) * | 2006-07-07 | 2012-09-19 | 日本碍子株式会社 | 圧電薄膜デバイス |
| JP2008109402A (ja) * | 2006-10-25 | 2008-05-08 | Toshiba Corp | 薄膜圧電共振器およびその製造方法 |
| US20100194246A1 (en) * | 2009-01-30 | 2010-08-05 | Integrated Device Technology, Inc. | Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations |
| US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
| US9154107B2 (en) * | 2009-05-28 | 2015-10-06 | Northrop Grumman Systems Corporation | Lateral over-moded bulk acoustic resonators |
| JP2011041136A (ja) * | 2009-08-17 | 2011-02-24 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびその製造方法 |
| US8330556B2 (en) * | 2009-11-23 | 2012-12-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Passivation layers in acoustic resonators |
| JP5229308B2 (ja) * | 2010-12-07 | 2013-07-03 | 株式会社村田製作所 | 圧電デバイス及びその製造方法 |
| US8816567B2 (en) * | 2011-07-19 | 2014-08-26 | Qualcomm Mems Technologies, Inc. | Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression |
| US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
| US9793874B2 (en) * | 2014-05-28 | 2017-10-17 | Avago Technologies General Ip Singapore (Singapore) Pte. Ltd. | Acoustic resonator with electrical interconnect disposed in underlying dielectric |
| US10038422B2 (en) | 2016-08-25 | 2018-07-31 | Qualcomm Incorporated | Single-chip multi-frequency film bulk acoustic-wave resonators |
| TWI611604B (zh) * | 2017-01-03 | 2018-01-11 | 穩懋半導體股份有限公司 | 體聲波濾波器及調諧體聲波濾波器之體聲波共振器之方法 |
| JP6545772B2 (ja) * | 2017-01-03 | 2019-07-17 | ウィン セミコンダクターズ コーポレーション | 質量調整構造付きバルク音響波共振装置の製造方法 |
| JP6909059B2 (ja) * | 2017-06-07 | 2021-07-28 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
| CN110445474A (zh) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | 薄膜体声波谐振器及其制造方法以及薄膜体声波滤波器 |
| US10790801B2 (en) | 2018-09-07 | 2020-09-29 | Vtt Technical Research Centre Of Finland Ltd | Loaded resonators for adjusting frequency response of acoustic wave resonators |
| CN111010103A (zh) * | 2019-05-31 | 2020-04-14 | 天津大学 | 带多层突起结构的谐振器及其制造方法、滤波器及电子设备 |
| CN112087217B (zh) * | 2020-09-27 | 2024-02-23 | 苏州汉天下电子有限公司 | Q值提升的fbar谐振器制造方法 |
| KR102609139B1 (ko) | 2020-10-13 | 2023-12-05 | 삼성전기주식회사 | 체적 음향 공진기 |
Citations (5)
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| US5873153A (en) * | 1993-12-21 | 1999-02-23 | Hewlett-Packard Company | Method of making tunable thin film acoustic resonators |
| US6469597B2 (en) * | 2001-03-05 | 2002-10-22 | Agilent Technologies, Inc. | Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method |
| US6483229B2 (en) * | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
| US6617249B2 (en) * | 2001-03-05 | 2003-09-09 | Agilent Technologies, Inc. | Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method |
| US6992420B2 (en) * | 2002-04-11 | 2006-01-31 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator and method of forming the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3715831B2 (ja) * | 1999-05-24 | 2005-11-16 | 京セラ株式会社 | 圧電共振子 |
| JP4513169B2 (ja) * | 2000-05-17 | 2010-07-28 | 株式会社村田製作所 | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
| US6407649B1 (en) * | 2001-01-05 | 2002-06-18 | Nokia Corporation | Monolithic FBAR duplexer and method of making the same |
| US6936837B2 (en) * | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
| JP2002344280A (ja) * | 2001-05-18 | 2002-11-29 | Mitsubishi Electric Corp | 圧電薄膜素子とその製造方法 |
| JP2003264445A (ja) * | 2002-03-08 | 2003-09-19 | Murata Mfg Co Ltd | 圧電共振子及びその製造方法等、並びに圧電フィルタ等 |
| JP3830843B2 (ja) * | 2002-03-28 | 2006-10-11 | 株式会社東芝 | 薄膜圧電共振子 |
| KR100506729B1 (ko) * | 2002-05-21 | 2005-08-08 | 삼성전기주식회사 | 박막 벌크 어코스틱 공진기（ＦＢＡＲｓ）소자 및 그제조방법 |
| EP1542362B1 (en) * | 2002-06-20 | 2011-03-30 | Ube Industries, Ltd. | Thin film piezoelectric oscillator, thin film piezoelectric device, and manufacturing method thereof |
-
2004
- 2004-02-04 JP JP2004027590A patent/JP4625260B2/ja not_active Expired - Fee Related
- 2004-08-03 US US10/909,335 patent/US20050168102A1/en not_active Abandoned
-
2006
- 2006-11-21 US US11/602,330 patent/US7408287B2/en not_active Expired - Fee Related
Patent Citations (5)
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| US5873153A (en) * | 1993-12-21 | 1999-02-23 | Hewlett-Packard Company | Method of making tunable thin film acoustic resonators |
| US6469597B2 (en) * | 2001-03-05 | 2002-10-22 | Agilent Technologies, Inc. | Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method |
| US6483229B2 (en) * | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
| US6617249B2 (en) * | 2001-03-05 | 2003-09-09 | Agilent Technologies, Inc. | Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method |
| US6992420B2 (en) * | 2002-04-11 | 2006-01-31 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator and method of forming the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7408287B2 (en) | 2008-08-05 |
| JP2005223479A (ja) | 2005-08-18 |
| JP4625260B2 (ja) | 2011-02-02 |
| US20070069606A1 (en) | 2007-03-29 |
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