US20050107007A1 - Polishing pad process for producing the same and method of polishing - Google Patents

Polishing pad process for producing the same and method of polishing Download PDF

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Publication number
US20050107007A1
US20050107007A1 US10/498,903 US49890304A US2005107007A1 US 20050107007 A1 US20050107007 A1 US 20050107007A1 US 49890304 A US49890304 A US 49890304A US 2005107007 A1 US2005107007 A1 US 2005107007A1
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Prior art keywords
polishing
fabric
polishing pad
fiber
photo
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Inventor
Shoichi Furukawa
Atsushi Nakamura
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Asahi Kasei Microdevices Corp
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Assigned to ASAHI KASEI EMD CORPORATION reassignment ASAHI KASEI EMD CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FURUKAWA, SHIOCHI, NAKAMURA, ATSUSHI
Publication of US20050107007A1 publication Critical patent/US20050107007A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds

Definitions

  • the present invention relates to a polishing pad for use in the step of planarizing non planar steps on the surface of wafers for creating semiconductor integrated circuits by the chemical mechanical polishing process, a method of producing the pad, and method of polishing using the pad.
  • Processes for manufacturing semiconductor integrated circuits include the process of creating a conductive film on the surface of wafers and then forming a wiring pattern by photolithography and etching, and the process of forming an interlevel dielectric film on said wiring pattern. Through these processes, there is formed non planar steps consisting of conducting materials and insulating materials on the surface of wafers. In recent years, as miniturization and multi-layering of wiring pattern are in progress for the purpose of attaining higher density of semiconductor integrated circuits, techniques for planarizing non planar steps on the surface of wafers have become important in order to secure the depth of focus during the photolithograpy step.
  • CMP chemical mechanical polishing
  • the polishing device for use in the CMP method is mainly composed of a platen, a wafer carrier head, a slurry supply nozzle, and a dresser.
  • the polishing pad is stuck on said platen, and the wafer for creating semiconductor integrated circuits is attached to the wafer carrier head.
  • Polishing by the CMP method is performed by pressing the surface to be polished of the wafer attached to the wafer carrier head against the polishing surface of the polishing pad, rotating the platen and said wafer carrier head and, at the same time, sandwiching the slurry supplied on the polishing surface in between the surface to be polished and the polishing surface.
  • conditioning of the polishing pad usually is performed with a dresser onto which a diamond has been affixed.
  • the conditioning treatment removes the surface layer of the polishing surface of the polishing pad thereby removing polishing crumbles, and thus plays a role of reviving the clean surface of the polishing pad.
  • the conditioning treatment also plays a role of forming fine texture (in an order of a few ⁇ m) useful in transporting the slurry on the surface layer of the polishing side.
  • the slurry may vary depending on the material to be polished and the process, it generally comprises 100-80% by weight of a processing liquid which is a solution of an oxidizing agent and a solubilizing agent such as hydrogen peroxide (H 2 O 2 ) and ferric nitrate (Fe(NO 3 ) 3 ), and 0-20% by weight of abrasive grains such as silica (SiO 2 ), ceria (CeO 2 ) and alumina (Al 2 O 3 ).
  • a chemical polishing action by dissolution, embrittlement etc. with the oxidizing agent, the solubilizing agent etc. in the processing liquid and a physical polishing action by abrasive grains take place at the same time.
  • the first requirement for the polishing pad is a high polishing speed.
  • the polishing surface of the polishing pad must have a structure that permits the efficient transport and retention of the slurry supplied from the slurry supply nozzle to the polishing surface along the entire surface of the contact interface between the polishing surface of the polishing pad and the surface to be polished of the wafer, and permits the extrusion of polished products or pad crumbles generated at the polishing area.
  • polishing pads used in the conventional methods have a concave-convex structure (in an order of a few hundred ⁇ m) such as concentric or spiral grooves on the entire pad surface as well as a local concave-convex structure (in an order of a few dozen ⁇ m) such as air bubbles resulting from the manufacturing process.
  • a concave-convex structure in an order of a few hundred ⁇ m
  • a local concave-convex structure in an order of a few dozen ⁇ m
  • the second requirement is the long life of the polishing pad, i.e. a large number of wafers can be polished without replacing the polishing pad.
  • materials that constitute the polishing pad must have high abrasion resistance.
  • the third requirement is a high planarizing ability. Specifically, since copper wiring having a thickness of 1000 nm or greater must be polished in the polishing process of copper-plated wiring in the damascene wiring, a high planarizing ability is required in order to offset non planar steps copied onto the plating surface from trenches in the plating process. In the polishing of surfaces to be polished comprising different materials such as copper, an interlevel dielectric film and a barrier metal, non planarizing such as dishing and erosion tends to occur, and thus it is necessary to minimize non planarizing by using a polishing pad that is highly uniform itself and whose polishing surface has anti-deformation properties.
  • the conventionally known polishing pads for CMP may be divided into the polishing pads that utilize resins having a closed cell structure, the polishing pads that utilize resins having an open cell structure, the polishing pads that utilize resins having a nonporous structure or the two-layered polishing pads comprising two of them that are stuck to each other.
  • polishing pads comprising foaming polyurethane are known. Said polishing pads are manufactured in a process in which block-like urethane foams are produced in a batch type reaction and then said block-like foams are sliced into a sheet form. Since said polishing pads have hemispheric recesses (in an order of few dozen ⁇ m) derived from sliced air bubbles as local concave-convex structures, they are usually used with concave-convex structures covering the entire surface of the pad such as grooves formed by cutting operations.
  • polishing pads comprising such polyurethane foams have not always satisfied the above three requirements for the polishing pad (thus, a high polishing speed, abrasion resistance, planarizing ability).
  • polishing pads that use a resin having an open cell structure are polishing pads in which polyurethane has been impregnated into a polyester felt fiber sheet (see for example U.S. Pat. No. 4,927,432).
  • Said polishing pad has been produced in a process in which a thermo-setting polyurethane dissolved in a solvent such as dimethylformamide, methylethyl ketone and tetrahydrofuran is impregnated into a felt fiber sheet, and after evaporating the solvent, the polyurethane is cured by heat.
  • Said polishing pad has continuous air bubbles (in an order of few dozen to 200 ⁇ m) derived from felt as a local concave-convex structure. It can also be used without forming grooves etc. on the entire surface of the pad, since the slurry is transported via a mechanism in which it soaks into the entire polishing pad through said continuous air bubbles and soaks out by the pressure on the polished surface.
  • the process of producing said polishing pad mainly comprises a drying step and a heat reaction step, and the reaction mixture is at a state in which it tends to aggregate, and thus it is difficult to maintain the composition and physical properties of the polishing pad materials uniformly on microscopic levels. Furthermore, since it has compressibility derived from the open cell structure, it has a problem of poor planarizing ability. Furthermore, due to the presence of space between single fibers in felt sheet as continuous air bubbles, polishing crumbles generated in wafer polishing become tangled with said fiber and thus scratches may often appear in the polished product. Therefore, in the polishing pads in which polyurethane has been impregnated into a polyester felt fiber sheet, satisfactory results have not been obtained in terms of the polishing speed and the planarizing ability.
  • polishing pad using a resin having a nonporous structure As a polishing pad using a resin having a nonporous structure, a solid homogeneous polymer such as polyurethane has been proposed (see U.S. Pat. No. 5,489,233). Also, there has been proposed a polishing pad using a resin having a nonporous structure created with a photo-setting resin using a polyurethane polymer (see U.S. Pat. No. 5,965,460). Unlike the above two polishing pads, said polishing pad has no essential concave-convex structure, and thus it is necessary to create local concave-convex structures (texture: in an order of a few ⁇ m) by conditioning treatment etc.
  • texture in an order of a few ⁇ m
  • concave-convex structures in an order of a few hundred ⁇ m covering the entire pad such as grooves may be formed by cutting operation.
  • concave-convex structures such as grooves can also be created by the photolithography method.
  • the above polishing pads using a resin having a nonporous structure only have concave-convex on the surface thereof by conditioning treatment etc., and thus they have a problem that they do not have sufficient ability to retain the slurry and have low polishing speeds. Besides, they have a problem that the life of the polishing pads is short.
  • a polishing pad having a higher polishing speed than the conventional polishing pads, higher uniformity in polishing, and that has an extended life i.e., a polishing pad is provided that simultaneously satisfies the above three requirements.
  • a polishing pad having a high planarizing ability that is suitable for polishing of thick conductor patterns such as the copper wiring pattern or the aluminum wiring pattern of the above-mentioned damascene wiring.
  • a method of polishing a wiring pattern comprising copper or aluminum formed on the surface of wafers for creating semiconductor integrated circuits using the above polishing pad.
  • a method of manufacturing the above polishing pad for use in polishing the surface of wafers for creating semiconductor integrated circuits.
  • the first aspect of the present invention provides a polishing pad comprising fabric and a nonporous resin that fills the space between component fibers of the fabric.
  • nonwoven fabric comprising as a component fiber at least one selected from the group consisting of a polyester fiber, an acrylic fiber, a polyamide fiber, silk, wool and cellulose is preferably used. Furthermore, fabric comprising a fiber that has a moisture content of 10% or greater at 21° C. and 80% RH is preferably used. Furthermore, fabric comprising a fiber having a tensile strength at dry of 3 g/D or greater is preferably used.
  • the above resin is preferably a photo-setting resin that was produced by photo-setting a photo-sensitive resin composition containing at least one selected from the group consisting of a hydrophilic photopolymeric monomer, a hydrophilic photopolymeric polymer and oligomer.
  • the second aspect of the present invention provides a method of polishing using a polishing pad comprising a nonporous photo-setting resin reinforced with fabric and the slurry.
  • fabric comprising a fiber that has a moisture content of 10% or greater at 21° C. and 80% RH, or fabric comprising a fiber that has a tensile strength at dry of 3 g/D or greater. Also, fabric comprising a fiber with a sectional form having a shape irregularity ratio of 1.2 or greater is preferably used.
  • the third aspect of the present invention provides a method of producing a polishing pad, which is characterized in impregnating a base matrix comprising fabric with a photo-sensitive resin composition and then irradiating said resin composition with an ultraviolet ray or a visible light thereby to cure the composition.
  • a polishing pad using a resin having a nonporous structure is preferred. Even if a filler is put into the polishing pad that uses a resin having a nonporous structure of prior art, the polishing speed was low and abrasion resistance was poor.
  • FIG. 1 shows a cross sectional diagram of an embodiment of the polishing pad according to the present invention.
  • Said diagram shows a cross section along the direction of thickness of the polishing pad, in which 1 denotes the polishing surface and 2 denotes grooves (in an order of a few hundred ⁇ m) formed throughout the polishing pad.
  • the polishing surface 1 is pressed against the surface to be polished of the wafer.
  • Grooves 2 are regions for transporting the slurry to the entire area of the polishing surface.
  • the polishing pad itself becomes abraded by wafer polishing, and when it is abraded until there are no grooves 2 left, the transportation efficiency of the slurry decreases, and thus normally it is replaced with a new polishing pad before there are no grooves 2 left.
  • the polishing pad of the present invention comprises a base matrix comprising a fabric and a nonporous resin that fills the space between component fibers of the base matrix.
  • the polishing pad of the present invention is not porous and thus it develops no heterogeneity in polishing resulting from distribution of air bubbles and compressibility. Also, unlike the conventional polishing pads that use a resin having a nonporous structure, the polishing pad of the present invention uses a base matrix comprising a fabric that is continuous throughout the polishing pad, thereby making the entire polishing pad a tenacious structure, which suppresses abrasion and which can increase the number of wafers to be polished with one pad.
  • the ability of retaining the slurry used in the polishing step and the polishing speed can be increased. Specifically, when a slurry that performs polishing mainly by a chemical action as described below is used, such enhanced water absorption exhibits an effect in retaining the slurry.
  • the concave-convex structure (this concave-convex structure is derived from the structure of the fabric itself) in an order of few dozen ⁇ m on the surface of the fabric exposed on part of the polishing surface of the polishing pad contributes to the efficient transport and retention of the slurry, and thus enables to attain a high polishing speed.
  • a concave-convex structure exhibits an effect in transporting and retaining the slurry.
  • the fabric for use as the base matrix in the polishing pad of the present invention may be woven or nonwoven fabric, and preferably nonwoven fabric is used.
  • nonwoven fabric As methods of making nonwoven fabric, the immersion adhesion method, the needle punch method, the spun bond method, the stitch bond method, or a wet type water jet method etc. are known.
  • the fabric for use in the present invention is preferably those that are highly dense and homogeneous in order to maintain high and uniform polishing speeds.
  • An example of preferred fabric is nonwoven fabric produced by the water jet method. Also preferred are those nonwoven fabric that was created by another method and compressed by the press etc. to a high density.
  • chemical synthetic fibers such as a polyester fiber, an acrylic fiber and a polyamide fiber, and natural fibers such as cellulose, wool and silk
  • fabric comprising a fiber having a high tensile strength, fabric comprising a fiber having a high hydrophilicity, or nonwoven fabric comprising porous, irregular shaped cross sectional or ultrathin fibers are preferably used.
  • nylon nonwoven fabric, rayon nonwoven fabric and nonwoven fabric comprising porous fibers are used more preferably in terms of the polishing speed.
  • slurry for polishing copper for use in the damascene wiring described above in the polishing method of the present invention two types of slurries are preferably used: slurries that use aluminum oxide as abrasive grains and polish mainly by a mechanical action, and slurries that use colloidal silica as abrasive grains and polish mainly by a chemical action such as oxidation and complex formation.
  • a slurry that polishes mainly by a chemical action it is also possible to obtain the planarization of polishing, i.e. to minimize dents, called dishing, in copper wirings at the edge of the polished surface, or dents, called erosion, at regions of high copper wiring density.
  • fabric comprising a fiber having an excellent tensile strength exhibits an excellent polishing performance with a slurry that polishes mainly by a mechanical action.
  • the fiber itself partly protruding from the polishing surface functions as the polishing material and, since it hardly warps by load, can effectively press the abrasive grains against the polished surface.
  • fibers having a tensile strength at dry of 3 g/D or greater are preferred, and fibers having a tensile strength of 4.5 g/D or greater are more preferred.
  • examples of such fibers include an acrylic fiber, a nylon fiber, or some of a polyester fiber.
  • the tensile strength of fibers can be determined based on the method of determination provided in JIS L1013 (Test method of chemical fiber filaments).
  • fabric comprising a fiber having a high water absorption exhibits an excellent polishing performance with a slurry that mainly polishes by a chemical action. This is because, it is believed, the fiber exposed on part of the polishing surface sucks up the processing liquid of the slurry and supplies it to the surface to be polished.
  • fibers having a moisture content of 10% or greater at a condition of 21° C. and 80% RH are preferred, and fibers having a moisture content of 15% or greater are more preferred.
  • examples of such fibers include a cellulose fiber such as rayon.
  • the moisture content of fibers can be determined based on the method of determination provided in JIS L1013 (Test method of chemical fiber filaments).
  • a polishing pad that uses fabric comprising a porous fiber having holes in the cross section or a fiber having notches or gaps on the surface exhibits an excellent polishing ability with a slurry that mainly polishes by a chemical action. This is because, it is believed, fibers exposed on the polishing surface are crushed into small pieces due to the conditioning treatment or load by the wafer, suck up the processing liquid of slurry, or serve as a place to capture abrasive grains.
  • a similar effect can be expected when fabric comprising a fiber with an irregular shaped cross section having a large surface area in stead of a circular cross section is used.
  • a degree of shape irregularity is defined by the shape irregularity ratio determined by the following method. First, a fabric is cut with a cutter so as to expose the cross section of the fiber. Then, a photograph of the cross section is taken using an optical microscope or an electron microscope. From the photograph of the cross section, the length S of the periphery of the cross section of one fiber constituting the fabric is determined (when the cross section of the fiber has one or more holes, the sum of periphery length of each hole is added to S). One half of the mean of the maximum and the minimum of a line segment cut out by the periphery of said cross section when a plurality of straight lines that cross the center of gravity of the fiber's cross section are drawn is set as a virtual radius a.
  • b/a is calculated for each fiber and the mean thereof is determined. This value is defined as the shape irregularity ratio.
  • the shape irregularity ratio is greater than 1, the fiber has an irregular shape, and according to the present invention, fabric comprised of fibers having a shape irregularity ratio of 1.2 or greater is preferred, and that having a shape irregularity ratio of 1.4 or greater is more preferred.
  • the above base matrix (fabric) is impregnated with a photo-sensitive resin composition and then irradiated with an ultraviolet ray or a visible light to cure said resin composition, a base matrix, even if it is opaque per se, can be used in the present invention if transparency of an extent that can sufficiently trigger a photo-setting reaction is obtained at a state in which a photo-sensitive resin composition is impregnated thereinto.
  • the resins for use in the present invention are required to be nonporous resins, and preferably nonporous photo-setting resins (obtained by photo-setting photo-sensitive resin compositions).
  • thermosetting resins are used to produce the nonporous polishing pads of the present invention, polishing pads may sometimes warp due to post-setting residual stress derived from heat distribution etc.
  • photo-setting resins are used, the problem of warping seldom develops because the photo-setting reaction of photo-sensitive resin compositions proceed in a short period of time as compared to thermosetting.
  • the reaction proceeds more uniformly as compared to thermosetting, with a result that the photo-setting resins, reaction products, have a more homogeneous composition than the thermosetting resins.
  • the amount of polishing is monitored by an optical method, and thus an opening is sometimes made at part of the polishing surface of the polishing pad to mount a transparent member (hereinafter referred to as window) (see for example U.S. Pat. No. 5,893,796).
  • window a transparent member
  • the process of manufacturing a polishing pad having the above window can be simplified.
  • a photo-sensitive resin composition is impregnated into fabric in which the part corresponding to the opening has been cut, and cured by light irradiation, so that said window can be formed within the polishing pad.
  • Said photo-setting resin has been cured by irradiating a photo-sensitive resin composition with an ultraviolet ray or a visible light, and said photo-sensitive resin composition contains at least one of a photopolymerizing polymer or oligomer and a photopolymerizing monomer.
  • a photo-sensitive resin composition containing at least one of a hydrophilic photopolymerizing polymer or oligomer, a hydrophilic photopolymerizing monomer in order to enhance water absorption of the pad.
  • photopolymerizing polymer or oligomer there can be mentioned unsaturated polyester, polyether(meth)acrylate, polyester(meth)acrylate, polybutadiene(meth)acrylate, polyepoxy(meth)acrylate and the like.
  • a constituent component of the photo-sensitive resin composition in order to obtain a photo-setting resin having a high water absorption, those having a hydroxyl group, a carboxyl group or a phosphate group at the end or at the side chain are preferred.
  • those having a hydroxyl group or a carboxyl group at the end or at the side chain of the polymer chain as unsaturated polyesters, or a polymer or an oligomer in which a monoisocyanate having an ethylenic unsaturated group was bound to a hydroxyl group of an unsaturated polyester polymer leaving only the carboxyl group.
  • Ethylenic unsaturated groups refer to those included in acrylate, methacrylate, vinyl, allyl and the like.
  • ethylenic unsaturated groups such as lauryl methacrylate, N-(3-dimetylaminopropyl) (meth)acrylamide, hydroxyethyl(meth)acrylate, hydroxypropyl(meth)acrylate, ethyl(meth)acrylate, propyl(meth)acrylate and the like, and multifunctional monomers such as ethyleneglycol di(meth)acrylate, diethyleneglycol di(meth)acrylate, 1,4-butandiol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, glycerin di(meth)acrylate, triethyleneglycol di(meth)acrylate, polyethylene glycol #200 di(meth)acrylate, polyethylene glycol #400 di(meth)acrylate, 1,3-butanediol di(meth)acrylamide, hydroxyethyl
  • alkyleneglycolic and alykyleneethereal monomers or photopolymerizing monomers containing hydroxyl groups in the molecule are particularly preferred among these photopolymerizing monomers.
  • photopolymerizing monomers containing an urethane group in the molecule that are obtained by reacting hydroxy(meth)acrylates such as pentaerythritol tri(meth)acrylate, 2-hydroxyethyl(meth)acrylate, 2-hydroxypropyl(meth)acrylate and 2-hydroxybutyl(meth)acrylate with monoisocyanate.
  • hydroxy(meth)acrylates such as pentaerythritol tri(meth)acrylate, 2-hydroxyethyl(meth)acrylate, 2-hydroxypropyl(meth)acrylate and 2-hydroxybutyl(meth)acrylate with monoisocyanate.
  • Photopolymerizing monomers containing urethane groups in the molecule obtained by reacting a hydroxyl group-containing compound with monoisocyanate having an ethylenic unsaturated group are also preferred.
  • photopolymerizing monomers that are obtained by reacting a hydroxyl group-containing compound with monoisocyanate having an ethylenic unsaturated group, said hydroxyl group-containing compound including polyether polyols such as poly(oxypropylene)polyol, copoly(oxyethylene-oxypropylene)diol, and polytetramethyleneetherdiol, polyester polyols such as polyester polyol, polycaprolactone polyol and polycarbonate polyol, straight-chain polyols such as 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol and polybutadine polyol, trimethylol propane, neopentyl glycol, methylpentane diol, acryl polyol, phenol resin polyol, epoxypolyol, polyester-polyether polyol, acryl, styrene, vinyl added and
  • any one or a combination of a plurality of these hydroxyl group-containing compounds may be used.
  • Diamines such as 3,3- dichloro-4,4-diaminophenylmethane may also be used in combination with these hydroxyl group-containing compounds.
  • said hydroxyl group-containing compounds preferably have a plurality of hydroxyl groups in the molecule.
  • 2-isocyanate ethylmethacrylate As the above monoisocyanate, 2-isocyanate ethylmethacrylate, phenyl isocyanate, 3-isocyanate propyl triethoxysilane etc. are preferred.
  • 2-isocyanate ethylmethacrylate has an ethylenic unsatuated group that functions as a binding point for photo-setting or thermosetting, and by adjusting the ratio of mixing 2-isocyanate ethylmethacrylate with other monoisocyanates having no ethylenic unsatuated groups, the hardness of the polishing pad can be controlled.
  • a photo-sensitive resin composition for use in the present invention preferably 80-5% by weight of a photopolymerizing monomer is blended with 20-95% by weight of a photopolymerizing polymer or oligomer. More preferably, 70-20% by weight of a photopolymerizing monomer is blended with 30-80% by weight of a photopolymerizing polymer or oligomer.
  • an alkyleneglycolic, an alkyleneethereal, or a hydrophilic photopolymerizing polymer or oligomer or a hydrophilic photopolymerizing monomer containing at least one of hydroxyl group, carboxyl group and phosphate group in the molecule is blended to 20% by weight or greater.
  • the photo-sensitive resin composition as claimed in the present invention usually uses with an addition of a photo polymerization initiator.
  • Said photo polymerization initiators include benzophenones, acetophenones, ⁇ -diketones, acyloins, acyloinethers, benzylalkylketals, polynuclear quinones, thioxanthones, acylphosphines and the like.
  • benzophenone chlorobenzophenone, acetophenone, benzyl, diacetyl, benzoin, pivaloin, benzoinmethylether, benzoinethylether, benzyldiethylketal, benzyldiisopropylketal, anthraquinone, 1,4-naphthoquinone, 2-chloroanthraquinone, thioxanthone, 2-chlorothioxanthone, acylphosphineoxide and the like. They may be used alone or in combination.
  • the photo polymerization initiators may preferably be used at 1-20 parts by weight relative to 100 parts by weight of the sum of the above photopolymerizing polymer or oligomer and a photopolymerizing monomer. According to the present invention, the presence of fabric reduces light transmission and thus it is preferred to use a photoinitiator having a high photo-sensitivity.
  • the polishing pad of the present invention may be obtained by impregnating said fabric with the above photo-sensitive resin composition by coating or dipping, and then irradiating an ultraviolet ray or a visible light of a wavelength corresponding to the photo-sensitivity of said resin composition so as to cure said resin composition to form a photo-setting resin.
  • the nonporous resin in the polishing pad of the present invention means a resin having a porosity of 10% or less.
  • the porosity may be defined as follows. From a subject for which the porosity is to be measured, ten samplings are performed, and the sample sections are sliced to expose a cross section, of which photographs are taken by an optical microscope or an electron microscope at a magnification of 60. The ratio of an area of holes relative to a cross sectional area of the sliced sample section of 1 mm long and 1 mm wide is determined by image processing etc., and the mean of ten determinations is defined as a porosity.
  • the porosity of the polishing pad means the porosity calculated based on the part excluding the fabric in the polishing pad (the area of holes/the area of the part excluding the fabric in the polishing pad (the area of the resin+the area of holes)).
  • the resin for use in polishing pad of the present invention is nonporous, and even if air bubbles that entered during the impregnation process into fabric are present, the porosity of the polishing pad is 10% or less.
  • the porosity of the polishing pad is preferably 5% or less, and more preferably 2% or less.
  • the polishing pad of the present invention uses a nonporous resin as described above, the slurry cannot be retained and transported via continuous air bubbles unlike the polishing pad of prior art that uses a resin having an open cell structure.
  • fabric as the substrate, it can have an ability of efficiently retaining and transporting the slurry on the surface of the wafer.
  • a slurry that polishes mainly by a chemical action is used, or a slurry that polishes mainly by a mechanical action is used, it is possible to efficiently retain and transport the slurry on the surface of the wafer depending on the characteristics or structure of fabric.
  • the ratio of the fabric and the resin in the polishing pad of the present invention is established so that the ratio of the area of the fabric as defined below comprises preferably 5-80%, and more preferably 10-60% depending on the type of the resin and the type and structure of the fabric. From the region to be used in the polishing of the polishing pad, ten samplings are performed, and the sample sections are sliced to expose a cross section, of which photographs are taken by an optical microscope or an electron microscope at a magnification of 60. The ratio (%) of an area of the fabric relative to a cross sectional area of the pad of 1 mm long and 1 mm wide is determined by image processing etc., and the mean of ten determinations is defined as an area ratio of fabric.
  • the fabric When fibers of the fabric used as the base matrix are thin, the fabric has a low density and the area ratio of fabric is 5% or less, a sufficient polishing speed cannot be obtained and it is not preferred. When the area ratio of fabric exceeds 80%, the impregnation of the resin becomes difficult and thus nonporous resins having a low porosity cannot be obtained, which is not preferred.
  • the polishing pad of the present invention by using a photo-setting resin having a high water absorption and/or a fabric having a high water absorption (specifically it becomes necessary when a slurry that polishes mainly by a chemical action is used), as described above, the water absorption of the region used for polishing becomes high, hence resulting in an enhanced ability of retaining the slurry.
  • the water absorption of the polishing pad in a preferred embodiment of the present invention is 1-15%, more preferably 2-10%, and even more preferably 4-10%. For the polishing pad having a water absorption of 1% or less, the ability of retaining the slurry becomes insufficient and thus a sufficient polishing performance cannot be obtained.
  • the strength of the polishing pad decreases which may cause inconveniences such as the reduced ability of planarizing and the quickened abrasion of the polishing pad.
  • grooves 2 are formed on the polishing surface by cutting as shown in FIG. 1 .
  • the representative grooves are about 200-1000 ⁇ m deep and about 100-500 ⁇ m wide, and have a groove-to-groove pitch of about 1-5 mm.
  • polishing In performing the polishing of the wafer using the polishing pad of the present invention, grooves are first formed on the polishing pad which is then stuck on the platen of the CMP polishing device. Then, the surface of the polishing surface is subjected to conditioning treatment (formation of fine texture) with a dresser, and fibers constituting the fabric are simultaneously exposed on the surface. On the other hand, the wafer is mounted to the wafer carrier head. Polishing is performed by supplying the slurry from the slurry supply nozzle to the polishing surface at a state in which the wafer is being pressed against the polishing pad while rotating the wafer carrier head and the platen.
  • fabric comprising a fiber having a high moisture content or fabric comprising a fiber having a high shape irregularity ratio is preferably used to obtain a high polishing speed.
  • fabric comprising a fiber having a high tensile strength at dry is preferably used to obtain a high polishing speed as described above.
  • the polishing surface is subjected to conditioning treatment to expose a fresh polishing surface to be used. Since the polishing surface becomes abraded by the polishing process and the conditioning treatment, it should be replaced with a new one before the remaining portions of the above grooves disappear.
  • another material can be stuck on one side of the polishing pad of the present invention as desired, and can be used as a double-layer polishing pad. At this time, the effect of the present invention can be obtained by using the side of the polishing pad of the present invention as the polishing surface.
  • FIG. 1 is a cross sectional diagram of an embodiment of the polishing pad according to the present invention.
  • a fabric comprising a nonwoven fabric (“Shaleria” manufactured by Asahikasei K. K.) with a thickness of 1 mm comprising a porous acrylic fiber having a tensile strength at dry of 3.1 g/D, a shape irregularity ratio of 1.5 and a moisture content of 1.2% was impregnated with a photo-sensitive resin composition comprising a unsaturated polyester oligomer 65% by weight, a hydroxyl group-containing monofunctional monomer 17% by weight, another monomer 16% by weight and a photo polymerization initiator 2% by weight, and then an ultraviolet ray was irradiated from both sides to prepare a polishing pad with a thickness of 1.5 mm and a diameter of 50 cm.
  • the polishing pad was mounted to the CMP polisher, and the mean polishing speed of the copper film on the silicon wafer was determined using a slurry of alumina abrasive grains to obtain a polishing speed of 520 nm/min at the maximum. Also, the amount of abrasion of the pad was determined to be 0.5 ⁇ m/min under a dress condition of 100-grid diamond size.
  • a fabric comprising a nonwoven fabric (“ColdonR0260T” manufactured by Asahikasei K. K.) with a thickness of 1 mm comprising a rayon fiber having a tensile strength at dry of 2.1 g/D, a shape irregularity ratio of 1.2 and a moisture content of 21.3% was impregnated with a photo-sensitive resin composition as in Example 1, and then an ultraviolet ray was irradiated from both sides to prepare a polishing pad with a thickness of 1.5 mm and a diameter of 50 cm.
  • the polishing pad was mounted to the CMP polisher, and the mean polishing speed of the copper film on the silicon wafer was determined using a slurry of silica abrasive grains to obtain a polishing speed of 660 nm/min at the maximum. Also, the amount of abrasion of the pad was determined to be 0.5 ⁇ m/min under a dress condition of 100-grid diamond size.
  • a photo-sensitive resin composition was prepared in the following procedure.
  • the urethanated products (A), (B) and (C), and (D) triallyl isocyanurate were mixed at a weight ratio of 1/1/1/0.2, to which were added 2,2-dimethoxy-2-phenylacetophenone as a photopolymerization initiator and 2,6-di-tert-butyl-4-methylphenol as a polymerization inhibitor at a weight ratio of 2% and 0.038%, respectively, relative to the total amount of (A), (B), (C) and (D) to prepare a sticky photo-sensitive resin composition.
  • a fabric comprising a nonwoven fabric (“ColdonL0170T” manufactured by Asahikasei K. K.) with a thickness of 0.6 mm comprising a nylon fiber having a tensile strength at dry of 4 . 9 g/D, a shape irregularity ratio of 1.0 and a moisture content of 5.2% and an acrylic fiber nonwoven fabric (“Shaleria” manufactured by Asahikasei K.
  • the region used for polishing of the fabric had an area ratio of fabric of 42%, water absorption of 2.1% and a porosity (a value calculated for the region excluding the fabric in the polishing pad) of 1.3%.
  • the polishing pad was mounted to the CMP polisher, and the mean polishing speed of the copper film on the silicon wafer was determined using a slurry of alumina abrasive grains as in Example 1 to obtain a polishing speed of 640 nm/min at the maximum. Also, the amount of abrasion of the pad was determined to be 0.1 ⁇ m/min under a dress condition of 100-grid diamond size.
  • a polishing pad having a thickness of 1.5 mm and a diameter of 50 cm was prepared in which grooves for slurry transport were created on the polishing surface.
  • the water absorption of said photo-setting resin was 3.0%.
  • the mean polishing speed of the wafer which was determined under the same condition as in Example 1 was 250 nm/min.
  • the amount of abrasion of the pad which was determined under the same dress condition as in Example 1 was 3 ⁇ m/min.
  • Example 2 Under the same condition as in Example 1, except that a urea filler was mixed in stead of a base matrix comprising a fabric, a polishing pad having a thickness of 1.5 mm and a diameter of 50 cm was prepared in which grooves for slurry transport were created on the polishing surface.
  • the mean polishing speed of the copper film on the wafer which was determined under the same condition as in Example 1 was 210 nm/min.
  • the amount of abrasion of the pad which was determined under the same dress condition as in Example 1 was 3 ⁇ m/min.
  • the mean polishing speed of the wafer was measured under the same condition as in Example 1, and was found to be 240 nm/min.
  • Example 2 Under the polishing condition using a silica slurry as in Example 2 except that a rayon fiber nonwoven fabric (“ColdonR0260T” manufactured by Asahikasei K. K.) was used alone as a polishing pad without being impregnated with a photo-sensitive resin composition and except that grooves for slurry transport were not created, the mean polishing speed of the copper film on the wafer which was determined was found to be 320 nm/min.
  • ColdonR0260T manufactured by Asahikasei K. K.
  • a polishing pad having an excellent abrasion resistance, polishing speed and uniformity in polishing, and thus time required in the polishing step of wafers for creating semiconductor integrated circuits can be drastically curtailed. Also according to the present invention, even for wirings (for example, thick conductor patterns such as the copper wiring pattern and aluminum wiring pattern of damascene wiring) containing copper or aluminum formed on the surface of wafers for creating semiconductor integrated circuits or insulator patterns of silicon dioxide etc., there can be provided a polishing pad that can be preferably used when planarization properties such as STI (Shallow Trench Isolation) are required.
  • STI Shallow Trench Isolation

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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
US10/498,903 2001-12-28 2002-12-26 Polishing pad process for producing the same and method of polishing Abandoned US20050107007A1 (en)

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JP2001-400250 2001-12-28
JP2001400250 2001-12-28
PCT/JP2002/013709 WO2003058698A1 (fr) 2001-12-28 2002-12-26 Feutre de polissage, son procede de production et procede de polissage

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US20050085169A1 (en) * 2001-03-08 2005-04-21 Cooper Richard D. Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same
US20050153634A1 (en) * 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US20070111644A1 (en) * 2005-09-27 2007-05-17 Spencer Preston Thick perforated polishing pad and method for making same
US20100119811A1 (en) * 2008-11-12 2010-05-13 Bestac Advanced Material Co., Ltd. Conductive polishing pad and method for making the same
US20120322348A1 (en) * 2009-12-22 2012-12-20 Jsr Corporation Pad for chemical mechanical polishing and method of chemical mechanical polishing using same
US20130260657A1 (en) * 2012-04-02 2013-10-03 Thomas West Methods and Systems for Centrifugal Casting of Polymer Polish Pads and Polishing Pads Made by the Methods
CN103753382A (zh) * 2014-01-06 2014-04-30 成都时代立夫科技有限公司 一种抛光垫及其制备方法
US10022842B2 (en) 2012-04-02 2018-07-17 Thomas West, Inc. Method and systems to control optical transmissivity of a polish pad material
US10722997B2 (en) 2012-04-02 2020-07-28 Thomas West, Inc. Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
US11679531B2 (en) 2021-10-13 2023-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and preparation thereof

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JP4625252B2 (ja) * 2003-12-19 2011-02-02 東洋ゴム工業株式会社 Ｃｍｐ用研磨パッド、及びそれを用いた研磨方法
FR2896179B1 (fr) * 2006-01-17 2009-08-07 Gekatex Soc Par Actions Simpli Utilisation d'un systeme tridimensionnel a structure souple.
TWI409136B (zh) * 2006-07-19 2013-09-21 Innopad Inc 表面具微溝槽之化學機械平坦化墊
WO2008093850A1 (fr) * 2007-02-01 2008-08-07 Kuraray Co., Ltd. Tampon de polissage et procédé de fabrication d'un tampon de polissage
JP5719030B2 (ja) * 2011-09-30 2015-05-13 Hoya株式会社 研磨パッドおよび該研磨パッドを用いたガラス基板の製造方法
KR101600393B1 (ko) 2015-05-20 2016-03-07 에프엔에스테크 주식회사 연마 패드 및 이의 제조 방법
CN106826540A (zh) * 2017-02-15 2017-06-13 蓝思科技（长沙）有限公司 一种光固型树脂研磨垫及其制备方法
TWI748192B (zh) * 2019-06-04 2021-12-01 中國砂輪企業股份有限公司 具有纖維研磨層的化學機械研磨拋光墊修整器及製作方法
CN111805413A (zh) * 2020-07-23 2020-10-23 中国科学院微电子研究所 化学机械研磨方法
CN112658948A (zh) * 2020-12-17 2021-04-16 庆安集团有限公司 一种对金属内凹型面进行抛光的抛光装置和方法

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US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US6036579A (en) * 1997-01-13 2000-03-14 Rodel Inc. Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto
US5965460A (en) * 1997-01-29 1999-10-12 Mac Dermid, Incorporated Polyurethane composition with (meth)acrylate end groups useful in the manufacture of polishing pads

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050085169A1 (en) * 2001-03-08 2005-04-21 Cooper Richard D. Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same
US20050153634A1 (en) * 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US20070111644A1 (en) * 2005-09-27 2007-05-17 Spencer Preston Thick perforated polishing pad and method for making same
US20100119811A1 (en) * 2008-11-12 2010-05-13 Bestac Advanced Material Co., Ltd. Conductive polishing pad and method for making the same
US8343586B2 (en) * 2008-11-12 2013-01-01 Bestac Advanced Material Co., Ltd. Conductive polishing pad and method for making the same
US20120322348A1 (en) * 2009-12-22 2012-12-20 Jsr Corporation Pad for chemical mechanical polishing and method of chemical mechanical polishing using same
US20130260657A1 (en) * 2012-04-02 2013-10-03 Thomas West Methods and Systems for Centrifugal Casting of Polymer Polish Pads and Polishing Pads Made by the Methods
US10022842B2 (en) 2012-04-02 2018-07-17 Thomas West, Inc. Method and systems to control optical transmissivity of a polish pad material
US10722997B2 (en) 2012-04-02 2020-07-28 Thomas West, Inc. Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
US11090778B2 (en) * 2012-04-02 2021-08-17 Thomas West, Inc. Methods and systems for centrifugal casting of polymer polish pads and polishing pads made by the methods
US11219982B2 (en) 2012-04-02 2022-01-11 Thomas West, Inc. Method and systems to control optical transmissivity of a polish pad material
CN103753382A (zh) * 2014-01-06 2014-04-30 成都时代立夫科技有限公司 一种抛光垫及其制备方法
US11679531B2 (en) 2021-10-13 2023-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and preparation thereof

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TWI225813B (en) 2005-01-01
CN1610962A (zh) 2005-04-27
JPWO2003058698A1 (ja) 2005-05-19
EP1467403A1 (fr) 2004-10-13
TW200302151A (en) 2003-08-01
KR20040066193A (ko) 2004-07-23
AU2002361109A1 (en) 2003-07-24
WO2003058698A1 (fr) 2003-07-17

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