US20040104211A1 - Heater and method of manufacturing same - Google Patents

Heater and method of manufacturing same Download PDF

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Publication number
US20040104211A1
US20040104211A1 US10/639,765 US63976503A US2004104211A1 US 20040104211 A1 US20040104211 A1 US 20040104211A1 US 63976503 A US63976503 A US 63976503A US 2004104211 A1 US2004104211 A1 US 2004104211A1
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Prior art keywords
substrate
central axis
heater element
heater
resistant
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Abandoned
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US10/639,765
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English (en)
Inventor
Yutaka Unno
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NGK Insulators Ltd
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NGK Insulators Ltd
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Assigned to NGK INSULATORS, LTD. reassignment NGK INSULATORS, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UNNO, YUTAKA
Publication of US20040104211A1 publication Critical patent/US20040104211A1/en
Priority to US11/484,284 priority Critical patent/US7345260B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic

Definitions

  • the present invention relates to a heater used for heating a substrate, such as a semiconductor wafer and a liquid crystal substrate and to a method of manufacturing the same.
  • a heater which heats a semiconductor wafer and the like has at least a substrate including a heating surface on which an object to be heated such as a wafer is placed and a resistant heater element embedded in this substrate.
  • This heater is manufactured by discriminating a peripheral shape of the resistant heater element, determining a central axis of the resistant heater element by use of the peripheral shape as a reference and allowing the central axis of the resistant heater element and a central axis of the substrate to be the same axis.
  • a peripheral portion of the resistant heater element can be discriminated by use of X-ray photography or the like in a case where the resistant heater element is embedded within the substrate.
  • the peripheral portion thereof can be discriminated by use of an image processing technology or the like in a case where the resistant heater element is on a surface portion of the substrate.
  • heat uniformity of the heater is conventionally evaluated once the heater is a finished body capable of electrical connection.
  • An object of the present invention is to provide a heater including a heating surface, which is capable of obtaining required thermal uniformity, and a method of manufacturing the same.
  • the required thermal uniformity described above means an even temperature distribution across a heating surface of a substrate.
  • To obtain the required uniformity means to obtain a temperature distribution with a small temperature difference, to correct and change the temperature distribution into appropriate one corresponding to an environment for use in which a predetermined film is formed on a wafer, or to minimize variations of the temperature distribution between individual products.
  • a heater according to an aspect of the present invention includes a plate-shaped substrate including a heating surface for heating an object to be heated and a resistant heater element provided in the substrate or on a surface thereof.
  • a central axis C 1 of a circumscribed circle of the resistant heater element and a central axis C 2 of the substrate are not concentric and there is a gap between the two axes.
  • a method of manufacturing a heater according to another aspect of the present invention includes forming a plate-shaped preliminary substrate which has a resistant heater element in the substrate or on a surface thereof and has a heating surface for heating an object to be heated on one side of the substrate; specifying a position of the central axis C 1 of the resistant heater element provided in the preliminary substrate; evaluating thermal uniformity of the heating surface of the preliminary substrate; specifying a position on the central axis C 2 of the substrate to be located in a position where the thermal uniformity of the heating surface is superior compared to the case where the central axis C 2 of the substrate is positioned at the central axis C 1 , based on the thermal evaluation result; and forming a substrate which has the central axis C 2 by performing grinding processing for the preliminary substrate.
  • the thermal uniformity on the heating surface of the heater can be improved.
  • FIG. 1A is a plan view of a heater of an embodiment of the present invention and FIG. 1B is a side view of FIG. 1A.
  • FIGS. 2A to 2 D show states of a substrate constituting the heater of the embodiment and a resistant heater element disposed in the substrate.
  • the substrate is partially broken.
  • FIGS. 2C and 2D are cross-sectional views of the substrate.
  • FIGS. 3A to 3 C are cross-sectional views showing other disposition states of a resistant heater element embedded within the substrate of the heater of the embodiment.
  • FIG. 4 is a flowchart showing a method of manufacturing the heater of the embodiment.
  • FIG. 5A is a plan view of a preliminary substrate which is formed in a preliminary substrate formation step S 1 of the embodiment and has a circular resistant heater element disposed thereon.
  • FIG. 5B is a plan view of a preliminary substrate having a polygonal resistant heater element disposed thereon.
  • FIG. 6A is an isothermal map on a heating surface of a heater of comparative example 1 and FIG. 6B is a graph showing a temperature distribution on a circumference of a circle with radius 138 mm of the heater of comparative example 1.
  • FIG. 6C is an isothermal map on a heating surface of a heater of example 1 and FIG. 6D is a graph showing a temperature distribution on a circumference of a circle with radius 138 mm of the heater of example 1.
  • FIG. 7 shows a way of shifting a position of a substrate central axis C 2 with respect to a preliminary substrate central axis C 3 and a resistant heater element central axis C 1 in a substrate center position determination step S 4 in example 1.
  • FIG. 8A is an isothermal map on a heating surface of a heater of comparative example 2 and FIG. 8B is a graph showing a temperature distribution on a line passing through a substrate center C 1 of the heater of comparative example 2.
  • FIG. 8C is an isothermal map on a heating surface of a heater of example 2 and
  • FIG. 8D is a graph showing a temperature distribution on a line passing through a substrate center C 1 of the heater of example 2.
  • FIG. 9 shows a way of shifting a position of a substrate central axis C 2 with respect to a preliminary substrate central axis C 3 and a resistant heater element central axis C 1 in a substrate center position determination step S 4 in example 2.
  • a temperature distribution of a heating surface does not always show a symmetric distribution around a center of the substrate while setting the center of the substrate as a reference and a series of heating conditions including calcining, firing and the like, which are applied to the substrate in a manufacturing process, greatly affect the temperature distribution of the heating surface of the heater.
  • the inventor has found out that, by providing a gap between the central axis of the resistant heater element and the central axis of the substrate, the heat uniformity on the heating surface of the substrate can be improved and, alternatively, the temperature distribution can be changed into a desired distribution. Furthermore, the inventor has also found out that the thermal uniformity of the heating surface of the substrate can be improved by evaluating a thermal uniformity after heat treatment including calcining or firing which affects the temperature distribution of the heating surface of the substrate and by adding a step of processing a substrate shape so as to enable the central axis of the substrate to be set with a gap between the central axis of the resistant heater element based on the evaluation result. Thus, the inventor has completed the present invention.
  • the central axis of the resistant heater element means an axis which passes through a center of a circumscribed circle of a peripheral shape of the resistant heater element and is perpendicular to the heating surface of the substrate.
  • the central axis of the resistant heater element means an axis which passes through a center of a circumscribed circle of a peripheral shape of a projected image of all the heater element units on the heating surface of the substrate and is perpendicular to the heating surface.
  • the central axis of the resistant heater element is merely called a center of the resistant heater element
  • the center means a position of the central axis of the resistant heater element on the heating surface of the substrate.
  • the central axis of the substrate means an axis which passes through a center of a circumscribed circle having a peripheral shape of the heating surface of the substrate and is perpendicular to the heating surface.
  • the center means the center of the circumscribed circle having the peripheral shape of the heating surface of the substrate.
  • FIGS. 1A and 1B show a heater 1 as an embodiment of the present invention.
  • This heater 1 includes at least a disc-shaped substrate 3 having a heating surface 2 for heating an object to be heated; and a resistant heater element 4 provided on this substrate 3 .
  • a central axis of a circumscribed circle C of the resistant heater element 4 that is, a central axis C 1 of the resistant heater element 4 and a central axis C 2 of the substrate 3 are not located at the same position and there is a gap D between the central axes C 1 and C 2 .
  • the central axis C 1 and the central axis C 2 are not concentric.
  • the heater 1 heats the substrate and is preferably used for heating a semiconductor wafer, a crystalline substrate or the like as an object to be heated.
  • the object is placed on the heating surface 2 of the heater 1 .
  • the substrate 3 is formed by use of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, aluminum, and alloys thereof or stainless-steel.
  • a thickness T of the substrate 3 is, for example, 0.5 mm to 30 mm.
  • a peripheral shape of the substrate 3 may be not only a circle, as shown in FIG. 1A, but also a substantially regular polygon. When the peripheral shape of the substrate 3 is a circle, an axis which passes through a center of the circle and is perpendicular to the heating surface 2 becomes a central axis C 2 of the substrate.
  • peripheral shape of the substrate 3 is a substantially regular polygon
  • an axis which passes through a center of a circumscribed circle of the substantially regular polygon and is perpendicular to the heating surface becomes the central axis C 2 of the substrate.
  • both sides of the substrate of the heater shown in FIGS. 1A and 1B have the same size and the same shape.
  • the peripheral shape of the substrate 3 coincides with a peripheral shape of the heating surface 2 .
  • the central axis C 2 of the substrate is determined by use of the peripheral shape of the heating surface 2 as a reference.
  • the heating surface 2 of the substrate 3 may be flat as shown in FIG. 1B and may also have a recess having trenches in a region where the object to be heated is placed.
  • the surface on which the object is placed can be embossed or can be formed as an uneven surface by providing grooves therein.
  • the resistant heater element 4 is made of molybdenum, tungsten, a compound of tungsten and molybdenum, platinum or the like.
  • the resistant heater element may have a linear shape, a mesh shape or a film shape.
  • a linear shaped resistant heater element one obtained by folding coiled or ribbon-shaped metal or the like can be used. Bulk metal or printed metal paste may be used therefor.
  • the resistant heater element may be embedded within the substrate 3 or may be formed by printing a metal paste on an exposed surface of the substrate 3 .
  • the resistant heater element 4 is embedded within the substrate 3 as shown, for example, in FIGS. 2A, 2C and 2 D.
  • the resistant heater element 4 may be disposed approximately in parallel with the heating surface 2 as shown in FIG. 2A or may be disposed so as to have its outer portion shallow and its central portion deep within the substrate 3 as shown in FIG. 2C.
  • the resistant heater element 4 may be disposed so as to have its outer portion deep and its central portion shallow within the substrate 3 .
  • the resistant heater element may be formed by paste printing on the side opposite to the heating surface 2 .
  • a peripheral shape of the resistant heater element 4 may be either circular or polygonal.
  • an axis which passes through a center of a circumscribed circle tangent to the peripheral shape of the resistant heater element and is perpendicular to the heating surface of the substrate 3 is set as a central axis of the resistant heater element 4 .
  • FIGS. 5A and 5B show a preliminary substrate 10 formed in a preliminary substrate formation step in a method of manufacturing the heater of the present invention, which will be described later.
  • a circular resistant heater element 4 is disposed in the preliminary substrate 10 shown in FIG. 5A and a square (regular polygonal) resistant heater element 4 is disposed in the preliminary substrate 10 shown in FIG. 5B.
  • the two resistant heater elements pass through a center of a circumscribed circle C (indicated by a dashed line) tangent to the resistant heater element 4 and take an axis perpendicular to the heating surface as the central axis C 1 of the resistant heater element 4 .
  • the heating surface 2 of the heater 1 is heated.
  • there is a gap between the position of the central axis C 1 of the resistant heater element 4 and the position of the central axis C 2 of the substrate 3 and thermal uniformity of the heating surface 2 of the substrate 3 can be improved by means of this gap.
  • the position of the central axis C 2 of the substrate 3 relative to that of the central axis C 1 of the resistant heater element 4 that is, the size and direction of the gap D are preferably set in such a manner that the heat uniformity on the heating surface of the substrate is superior compared to a case where the central axes C 1 and C 2 are positioned on the same axis.
  • the gap D is preferably set within a range of 0.005 to 10 mm.
  • a lower limit of the gap D is set to 0.005 mm, required thermal uniformity attributable to the gap can be achieved.
  • an upper limit thereof is set to 10 mm, required thermal uniformity can be achieved by positioning the resistant heater element 4 while avoiding interference with other parts (not shown) provided on the substrate 3 such as a lift pin hole and a shaft.
  • the lift pin hole and the shaft are provided by using the substrate central axis C 2 as a reference.
  • the resistant heater element 4 interferes with the lift pin hole and the shaft and thus the thermal uniformity is lowered.
  • the gap D is set more preferably to 0.01 mm to 8 mm and further preferably to 0.02 mm to 5 mm.
  • the resistant heater element 4 can include one or a plurality of heater element units 41 , 42 , . . . which are provided in the substrate 3 .
  • an axis which passes through a center of a circumscribed circle relative to a projected shape E to the heating surface 2 of the heater element units 41 , 42 , . . . and is perpendicular to the heating surface is set as the central axis C 1 of the resistant heater element 4 .
  • the resistant heater element 4 shown in FIG. 3A includes two heater element units 41 and 42 which are disposed approximately in parallel with the heating surface 2 and have the same size.
  • the resistant heater element 4 shown in FIG. 3B includes one heater element unit 43 disposed approximately in parallel with the heating surface 2 and a cone-shaped heater element unit 44 deep in its center.
  • the resistant heater element 4 shown in FIG. 3C includes two heater element units 45 and 46 which are disposed approximately in parallel with the heating surface 2 and have different sizes from each other (the lower one is formed to be wider than the upper one).
  • the resistant heater element 4 includes a plurality of heater element units 41 , 42 , . . .
  • the respective heater element units can be disposed not only by changing the depth from the heating surface 2 as shown in FIGS. 3A to 3 C but also by arranging the plurality of heater element units at the same depth from the heating surface 2 .
  • FIG. 4 is a flowchart of the manufacturing method.
  • the method of manufacturing the heater 1 according to the embodiment has: a preliminary substrate formation step S 1 of forming a plate-shaped preliminary substrate 10 having two sides with a larger area than the substrate 3 ; a heater element center measurement step S 2 of specifying a position of the central axis of the resistant heater element 4 provided in the preliminary substrate 10 ; a heat uniformity evaluation S 3 of the preliminary substrate 10 ; a substrate center position determination step S 4 of specifying a position of the central axis C 2 of the substrate 3 , based on the heat uniformity evaluation result, in a direction in which required thermal uniformity can be obtained by use of the center C 1 of the resistant heater element 4 as a reference; and an eccentric machining step S 5 of obtaining the substrate 3 having the central axis C 2 by subjecting the preliminary substrate 10 to grinding processing. Furthermore, thereafter, in order to obtain a finished body, a final processing series step S 6 is added.
  • the preliminary substrate 10 which has two sides with a larger area than the substrate 3 as the finished body is formed.
  • ceramic powder such as aluminum nitride, silicon carbide, silicon nitride and aluminum oxide, for example, is filled into a mold and subjected to preliminary molding until the powder has a certain degree of hardness so as to obtain a preformed body.
  • a recess corresponding to the shape of the resistant heater element is provided on a surface of the preformed body.
  • the resistant heater element 4 made of a linear or mesh shaped metal bulk body is housed in the recess and is covered with the same ceramic powder.
  • This embedding of the resistant heater element 4 is performed only once in the case of the heater 1 shown in FIGS. 2A to 2 D. However, the embedding thereof is performed for every heater element unit in the case of the heater 1 shown in FIGS. 3A to 3 D.
  • FIGS. 5A and 5B show the preliminary substrates 10 in which the circular resistant heater element 4 is embedded and FIG. 5B shows the preliminary substrate 10 in which the square (regular polygonal) resistant heater element 4 is embedded.
  • heat treatment is performed for a substrate material under various conditions in a process of sintering of a molded body or sintering by hot-pressing which are executed as needed.
  • a substrate material for example, as the substrate material
  • sintering is performed by holding the substrate material for about 2 to 6 hours at a temperature of 1700 to 1900° C.
  • the method of manufacturing the preliminary substrate 10 is not particularly limited to the above.
  • Various molding methods and other sintering methods such as a normal pressure sintering method can be also used.
  • a plate-shaped molded body is formed by use of a ceramic green sheet and, thereafter, a pattern having a linear shape, a mesh shape or a film shape is printed on one side of the molded body by use of a metal paste such as tungsten or molybdenum. Thereafter, another ceramic green sheet is laminated thereon and sintering is performed.
  • a metal plate having a groove to mount the resistant heater element is prepared and, after mounting the resistant heater element in the groove, another metal plate is laminated thereon. Subsequently, the two metal plates are integrated with each other by screwing, soldering or the like. Note that the periphery of the resistant heater element is covered with a heat-resistant insulating material so as to electrically isolate the resistant heater element from the metal plates.
  • This preliminary substrate 10 is formed to have two sides with a larger area than the substrate 3 as the finished body, because of a processing area H.
  • a processing area H In FIGS. 5A and 5B, an outline of the substrate 3 is indicated by a double dashed line.
  • the width of processing area H is set to 5 mm or less, and more preferably to about 1.5 mm.
  • the central axis C 1 of the resistant heater element provided on the preliminary substrate 10 is specified. Note that, in practice, specifying only a passing point of the central axis C 1 of the resistant heater element in the heating surface 2 of the preliminary substrate 10 , that is, specifying the center C 1 of the resistant heater element is sufficient.
  • central axis C 3 of the preliminary substrate 10 and the central axis C 1 of the resistant heater element 4 are set on approximately the same axis.
  • the temperature distribution on the surface of the preliminary substrate 10 , to be the heating surface 2 is measured by use of, for example, an infrared thermometer. This measurement of the temperature distribution is performed after processing the preliminary substrate 10 to have a shape required for the measurement.
  • the position of the central axis C 2 is set to be located in a position where heat uniformity is superior compared to a case where the central axis C 2 of the substrate and the central axis C 1 of the resistant heater element are located on the same axis in the finished substrate.
  • a direction of a positional deviation of the central axis C 2 of the substrate 3 and the gap D thereof are set by use of the central axis C 1 of the resistant heater element 4 as a reference. Note that, in practice, specifying only a passing point of the central axis C 1 of the substrate 3 in the heating surface 2 of the preliminary substrate 10 , that is, specifying the center C 1 of the substrate 3 is sufficient.
  • the direction of a positional deviation (a direction of an arrow K 1 of FIG. 7 or an arrow K 2 of FIG. 9) and the gap D, which are set in the previous step S 4 , are entered into, for example, an NC processing machine and its offset function processes the preliminary substrate 10 by using the specified position of the central axis C 2 as a processing centel
  • a grinded area J 1 see FIG. 7
  • a grinded area J 2 see FIG. 9
  • the final processing step S 6 has: a primary substrate processing step S 61 of providing a lift pin hole in the substrate 3 and processing the substrate 3 into a shape required for shaft junction of the next step; a shaft junction step S 62 of joining a shaft with the substrate 3 ; a secondary substrate processing step S 63 of finishing the entire body into a final shape; a terminal junction step S 64 of joining terminals with both ends of the resistant heater element 4 and connecting power supply components to the terminals; and a finished body heat uniformity evaluation step S 65 of checking the quality of a finished body.
  • a substrate which has passed in the finished body heat uniformity evaluation step S 65 becomes a finished body.
  • this final processing step S 6 can leave out the shaft junction step S 62 and the secondary substrate processing step S 63 therefrom.
  • the lift pin is a pin which pushes the substrate up in detaching the substrate mounted on the heating surface.
  • the shaft junction step S 62 when the substrate is made of a ceramic material, the shaft is formed by using the same ceramic material and is joined with the substrate 3 by integral junction or by seal junction using an O-ring, metal packing or the like. In a case of subjecting the shaft and the substrate 3 to solid-phase bonding, those two are joined together by performing heat treatment under a high temperature condition close to a sintering temperature. Note that the thermal uniformity of the heating surface of the substrate 3 is most affected by a heat treatment condition in performing sintering of ceramics that is the substrate material in the preliminary substrate formation step S 1 and is less affected by heat treatment performed for joining the substrate with the shaft. Therefore, the heat uniformity evaluation of the heating surface of the substrate 3 , which is performed before specifying the position of the central axis C 2 of the substrate 3 , is preferably performed after the step of sintering the preliminary substrate 10 .
  • the entire shape including the shaft undergoes finishing processing.
  • metal is preferable, particularly nickel (Ni).
  • Ni nickel
  • the power supply component is applied in a shape of a rod or a wire.
  • screwing, caulking, engaging, soldering, welding, eutectic bonding and the like are applicable.
  • the temperature distribution in the heating surface of the substrate 3 can be adjusted to have a required temperature distribution and the thermal uniformity can be improved.
  • Comparative example 1 is a conventional heater 100 in which the central axis C 2 of the substrate 3 and the central axis C 1 of the resistant heater element are on the same axis, that is, are concentric.
  • the substrate 3 of the heater 100 is made of aluminum nitride and is a disc of ⁇ 335 mm ⁇ 15 mm of thickness T.
  • the resistant heater element 4 is formed of a molybdenum coil and is embedded within the substrate 3 as shown in FIG. 2A.
  • FIGS. 6A and 6B show temperature distributions in the heating surface 2 of the heater 100 .
  • results obtained by measuring temperatures on the heating surface 2 by use of an infrared thermometer are indicated by isothermal curves F on the heating surface 2 .
  • the temperature distribution shown in FIG. 6B indicates a distribution of temperatures at twelve measuring points on the heating surface 2 which are set at even intervals on the circumference of a circle with radius 138 mm which takes the substrate center C 2 as a reference. Note that a set temperature is 525° C.
  • Example 1 is a heater 1 in which the central axis C 2 of the substrate 3 and the central axis C 1 of the resistant heater element are set by leaving a gap therebetween.
  • the central axis C 1 of the resistant heater element 4 is set below the central axis C 2 of the substrate 3 at an angle to the left of C 2 on the drawing.
  • the gap D between the central axes C 1 and C 2 is 1.5 mm.
  • the substrate 3 of the heater 1 is made of aluminum nitride and is a disc of ⁇ 335 mm ⁇ 15 mm of thickness T.
  • the materials, shapes and sizes of the substrate 3 and the resistant heater element are the same as those of comparative example 1.
  • FIGS. 6C and 6D show temperature distributions in the heating surface 2 .
  • the measurement conditions of the temperature distributions and the method of displaying the temperature distributions are the same as those of comparative example 1.
  • FIG. 7 shows the preliminary substrate 10 , the position of the central axis C 1 of the resistant heater element, which is specified in the heater element center measurement step S 2 , the temperature distribution (isothermal curves) on the heating surface, which is obtained in the heat uniformity evaluation step S 3 , and the position of the central axis C 2 of the substrate 3 , which is specified in the substrate center position determination step. Furthermore, in FIG. 7, a grinded area in the eccentric machining step S 5 is denoted by J 1 .
  • a hot portion A emerges in an area (indicated by hatching) which spreads upward at an angle to the right from a central portion of the preliminary substrate 10 and a cool portion B emerges in a lower left area (indicated by cross-hatching) of the preliminary substrate 10 .
  • the position of the central axis C 2 of the substrate 3 as the finished body is set at a position shifted by 1.5 mm in a direction of the arrow K 1 passing the center C 1 of the heater element 4 and facing the hot portion A from the cool portion B.
  • the substrate 3 having the central axis C 2 is obtained after the eccentric machining step S 5 .
  • the heater 1 of example 1 has fewer isothermal curves F and has achieved evenness of heat across the entire heating surface 2 .
  • the heater 100 has ⁇ 1.3% but the heater 1 is improved to have ⁇ 0.5%
  • a heater 100 of comparative example 2 is a conventional heater 100 in which the central axis C 2 of the substrate 3 and the central axis C 1 of the resistant heater element are on the same axis, that is, are concentric.
  • the substrate 3 of the heater 100 is made of aluminum nitride and is a disc of ⁇ 340 mm ⁇ 17 mm of thickness T.
  • the resistant heater element 4 includes: a first heater element unit 5 disposed in a region which is 6.5 mm deep from the heating surface 2 ; and a second heater element unit 5 disposed in a region which is 12 mm deep from the heating surface 2 . Therefore, the circumscribed circle C of the resistant heater element 4 is a circumscribed circle abutting on the periphery of the projected shape of the first and second heater element units 41 and 42 .
  • FIGS. 8A and 8B show temperature distributions in the heating surface 2 of the heater 100 of comparative example 2.
  • results obtained by measuring temperatures on the heating surface 2 by use of an infrared thermometer are indicated by isothermal curves F on the heating surface 2 .
  • the temperature distribution shown in FIG. 8B indicates a distribution of temperatures at five measuring points G 1 to G 5 on the heating surface 2 which are set at even intervals on a diameter passing through the substrate center C 2 . Note that a set temperature is 600° C.
  • Example 2 is a heater 1 in which the central axis C 2 of the substrate 3 and the central axis C 1 of the resistant heater element are set by leaving a gap therebetween. As shown in FIG. 8C, in this heater 1 , the position of the central axis C 1 of the resistant heater element 4 is set to the left of the position of the central axis C 2 of the substrate in a horizontal direction on the drawing. The gap D between the central axes C 1 and C 2 is 1.0 mm.
  • the substrate 3 of the heater 1 of example 2 is made of aluminum nitride and is a disc of ⁇ 335 mm ⁇ 15 mm of thickness T.
  • the materials, shapes and sizes of the substrate 3 and the resistant heater element are the same as those of comparative example 2.
  • FIG. 9 shows the position of the central axis C 1 of the resistant heater element, which is specified in the heater element center measurement step S 2 , the temperature distribution (isothermal curves) on the heating surface, which is obtained in the heat uniformity evaluation step S 3 , and the position of the central axis C 2 of the substrate 3 , which is specified in the substrate center position determination step, in the preliminary substrate 10 . Furthermore, in FIG. 9, a region to be deleted in the eccentric machining step S 5 is denoted by J 2 .
  • a hot portion A emerges in an area (indicated by hatching) at a right end along a horizontal diameter of the preliminary substrate 10 and a cool portion B emerges in an area (indicated by cross-hatching) at a left end along the horizontal diameter of the preliminary substrate 10 .
  • the position of the central axis C 2 of the substrate 3 as the finished body is set at a position shifted by 1.0 mm in a direction of the arrow K 2 passing the center C 1 of the heater element 4 and facing the hot portion A from the cool portion B.
  • the substrate 3 having the central axis C 2 is obtained after the eccentric machining step S 5 .
  • the central axis of the resistant heater element and the central axis of the substrate are not on the same axis and a predetermined gap is provided between the both central axes.
  • the heating surface of the substrate can be set to have a temperature distribution achieving a desired heat uniformity.
US10/639,765 2002-08-21 2003-08-12 Heater and method of manufacturing same Abandoned US20040104211A1 (en)

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US20020043530A1 (en) * 1999-11-19 2002-04-18 Yasutaka Ito Ceramic heater
US20060102613A1 (en) * 2004-11-15 2006-05-18 Sumitomo Electric Industries, Ltd. Semiconductor fabrication device heater and heating device equipped with the same
EP1703777A1 (en) * 2005-03-17 2006-09-20 Ngk Insulators, Ltd. Position accuracy evaluation method and apparatus
US20130161305A1 (en) * 2011-08-30 2013-06-27 Watlow Electric Manufacturing Company High definition heater and method of operation

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US8547005B1 (en) 2010-05-18 2013-10-01 Superior Technical Ceramics, Inc. Multi-layer heater for an electron gun
CN103255394A (zh) * 2012-02-17 2013-08-21 苏州艾默特材料技术有限公司 金属有机化合物化学气相沉积加热器制作方法
JP6767833B2 (ja) * 2016-09-29 2020-10-14 日本特殊陶業株式会社 加熱装置
JPWO2023026929A1 (ja) * 2021-08-27 2023-03-02

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US6548787B2 (en) * 2000-01-13 2003-04-15 Sumitomo Electric Industries, Ltd. Ceramic heater
US6653603B2 (en) * 2000-11-30 2003-11-25 Ngk Insulators, Ltd. Heaters

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020043530A1 (en) * 1999-11-19 2002-04-18 Yasutaka Ito Ceramic heater
US20060102613A1 (en) * 2004-11-15 2006-05-18 Sumitomo Electric Industries, Ltd. Semiconductor fabrication device heater and heating device equipped with the same
EP1703777A1 (en) * 2005-03-17 2006-09-20 Ngk Insulators, Ltd. Position accuracy evaluation method and apparatus
KR100733444B1 (ko) * 2005-03-17 2007-06-29 니뽄 가이시 가부시키가이샤 위치 정밀도 평가 방법 및 위치 정밀도 평가 장치
US7948516B2 (en) 2005-03-17 2011-05-24 Ngk Insulators, Ltd. Position accuracy evaluation method and position accuracy evaluation apparatus
US20130161305A1 (en) * 2011-08-30 2013-06-27 Watlow Electric Manufacturing Company High definition heater and method of operation
US9263305B2 (en) * 2011-08-30 2016-02-16 Watlow Electric Manufacturing Company High definition heater and method of operation
US20160118277A1 (en) * 2011-08-30 2016-04-28 Watlow Electric Manufacturing Company High definition heater and method of operation
US20160118276A1 (en) * 2011-08-30 2016-04-28 Watlow Electric Manufacturing Company High definition heater and method of operation
US10043685B2 (en) * 2011-08-30 2018-08-07 Watlow Electric Manufacturing Company High definition heater and method of operation
US10734256B2 (en) * 2011-08-30 2020-08-04 Watlow Electric Manufacturing Company High definition heater and method of operation

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JP3833974B2 (ja) 2006-10-18
US7345260B2 (en) 2008-03-18
JP2004079440A (ja) 2004-03-11
US20060289449A1 (en) 2006-12-28

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