US11195807B2 - Semiconductor device, high-frequency power amplifier, and method of manufacturing semiconductor device - Google Patents

Semiconductor device, high-frequency power amplifier, and method of manufacturing semiconductor device Download PDF

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US11195807B2
US11195807B2 US16/629,669 US201716629669A US11195807B2 US 11195807 B2 US11195807 B2 US 11195807B2 US 201716629669 A US201716629669 A US 201716629669A US 11195807 B2 US11195807 B2 US 11195807B2
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heatsink
lead
convex portion
semiconductor device
molding material
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US20200227363A1 (en
Inventor
Tomoyuki Asada
Yoichi Nogami
Kenichi Horiguchi
Shigeo Yamabe
Satoshi Miho
Kenji Mukai
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORIGUCHI, KENICHI, YAMABE, SHIGEO, NOGAMI, YOICHI, MUKAI, KENJI, ASADA, TOMOYUKI, MIHO, SATOSHI
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Definitions

  • the technique disclosed in the specification of the present application relates to a semiconductor device, a high-frequency power amplifier including the semiconductor device, and a method of manufacturing the semiconductor device.
  • Patent Document 1 International Publication No. 2013/094101
  • a parasitic inductance component on a heatsink side becomes redundant in a region where a lead connected to the semiconductor element via a wire and the heatsink overlap with each other in an up-down direction when the heatsink is grounded.
  • impedance in the lead cannot be reduced to a desired level.
  • the impedance in the lead is high, so that a high performance is obstructed in a case where a semiconductor device is used as a high-frequency amplifier, for example.
  • the technique disclosed in the specification of the present application is therefore has been made to solve the above problems, and it is an object of the technique to provide a technique capable of reducing impedance in a lead connected to a semiconductor element while producing an effect of anchoring a molding material.
  • a first embodiment of a technique disclosed in the specification of the present application includes: a heatsink at least whose lower surface is grounded; semiconductor element which is disposed on an upper surface of the heatsink and a high-frequency signal is input to or output from; at least one lead electrically connected to the semiconductor element via a wire and disposed on an upper side of the heatsink; and a molding material formed to cover part of the lead, at least an upper surface of the heatsink, and the semiconductor element, wherein the heatsink is disposed to partially overlap with the lead in a plan view, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position is formed, and on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, at least one second convex portion protruding more than an edge portion of a lower surface in the position
  • a second embodiment of a technique disclosed in the specification of the present application includes: a heatsink at least whose lower surface is grounded; a semiconductor element which is disposed on an upper surface of the heatsink and a high-frequency signal is input to or output from; at least one lead electrically connected to the semiconductor element via a wire and disposed on an upper side of the heatsink; and a molding material formed to cover part of the lead, at least an upper surface of the heatsink, and the semiconductor element, wherein the heatsink is disposed to partially overlap with the lead in a plan view, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position is formed, at least one cutting portion is formed in an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, and the cutting portion is filled with the molding material.
  • a third embodiment of a technique disclosed in the specification of the present application includes: preparing a heatsink at least whose lower surface is grounded; locating, on an upper surface of the heatsink, a semiconductor element which a high-frequency signal is input to or output from; locating at least one lead electrically connected to the semiconductor element via a wire on an upper side of the heatsink; locating the heatsink to partially overlap with the lead in a plan view; forming, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position; forming, on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, at least one second convex portion protruding more than an edge portion of a lower surface in the position; forming a molding material covering part of the lead, part of the heatsink, and the semiconductor element;
  • a first embodiment of a technique disclosed in the specification of the present application includes: a heatsink at least whose lower surface is grounded; a semiconductor element which is disposed on an upper surface of the heatsink and a high-frequency signal is input to or output from; at least one lead electrically connected to the semiconductor element via a wire and disposed on an upper side of the heatsink; and a molding material formed to cover part of the lead, at least an upper surface of the heatsink, and the semiconductor element, wherein the heatsink is disposed to partially overlap with the lead in a plan view, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position is formed, and on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, at least one second convex portion protruding more than an edge portion of a lower surface in
  • the parasitic inductance component in the lateral direction of the heatsink is reduced in the position where the heatsink overlaps with the lead in a plan view. Reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead and the heatsink is grounded via the heatsink. Accordingly, the impedance in the lead can be reduced. That is to say, the impedance in the lead connected to the semiconductor element can be reduced while achieving the effect of anchoring the molding material by the second convex portion.
  • a second embodiment of a technique disclosed in the specification of the present application includes: a heatsink at least whose lower surface is grounded; a semiconductor element which is disposed on an upper surface of the heatsink and a high-frequency signal is input to or output from; at least one lead electrically connected to the semiconductor element via a wire and disposed on an upper side of the heatsink; and a molding material formed to cover part of the lead, at least an upper surface of the heatsink, and the semiconductor element, wherein the heatsink is disposed to partially overlap with the lead in a plan view, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position is formed, at least one cutting portion is formed in an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, and the cutting portion is filled with the molding material.
  • the cutting portion in the heatsink is filled with the molding material, thus the effect of anchoring the heatsink and the molding material, that is to say, the anchor effect can be achieved.
  • the parasitic inductance component in the lateral direction of the heatsink is reduced in the position where the heatsink overlaps with the lead in a plan view. Reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead and the heatsink is grounded via the heatsink. Accordingly, the impedance in the lead can be reduced. That is to say, the impedance in the lead connected to the semiconductor element can be reduced while achieving the effect of anchoring the molding material by the cutting portion.
  • a third embodiment of a technique disclosed in the specification of the present application includes: preparing a heatsink at least whose lower surface is grounded; locating, on an upper surface of the heatsink, a semiconductor element which a high-frequency signal is input to or output from; locating at least one lead electrically connected to the semiconductor element via a wire on an upper side of the heatsink; locating the heatsink to partially overlap with the lead in a plan view; forming, on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view, at least one first convex portion protruding more than an edge portion of an upper surface in the position; forming, on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view, at least one second convex portion protruding more than an edge portion of a lower surface in the position; forming a molding material covering part of the lead, part of the heatsink, and the semiconductor element;
  • the projection length of the lower side of the heatsink that is to say, the lateral protrusion length of first convex portion is set to be long enough to be able to prevent the intrusion of the molding material, thus the intrusion of the molding resin around the side surface of the first convex portion or the lower surface of the heatsink can be suppressed. Accordingly, the semiconductor device capable of reducing the impedance in the lead while suppressing the intrusion of the molding resin can be manufactured.
  • FIG. 1 A cross-sectional view along an X axis direction for schematically illustrating a configuration for achieving a semiconductor device according to an embodiment.
  • FIG. 2 A cross-sectional view along a Y axis direction for schematically illustrating a configuration for achieving the semiconductor device according to an embodiment.
  • FIG. 3 A perspective view illustrating a configuration of a heatsink according to an embodiment.
  • FIG. 4 A cross-sectional view along the X axis direction for schematically illustrating the configuration for achieving the semiconductor device according to an embodiment.
  • FIG. 5 A plan view illustrating a shape of the heatsink according to an embodiment.
  • FIG. 6 A cross-sectional view illustrating a structure of covering and fixing the heatsink and a lead illustrated in FIG. 5 by a molding material.
  • FIG. 7 A cross-sectional view along the X axis direction for schematically illustrating the configuration for achieving the semiconductor device according to an embodiment.
  • FIG. 8 A cross-sectional view along the X axis direction for schematically illustrating the configuration for achieving the semiconductor device according to an embodiment.
  • FIG. 9 A drawing illustrating an outer shape of a package after being cut in a process subsequent to a formation of a molding material resin according to an embodiment.
  • FIG. 10 A cross-sectional view illustrating a package structure including s heatsink with a shape having a convex portion on an edge portion of an upper surface covered by the molding material so that the convex portion protrudes more than an edge portion of a lower surface exposed from the molding material according to an embodiment.
  • Described hereinafter are a semiconductor device, a high-frequency power amplifier including the semiconductor device, and a method of manufacturing the semiconductor device according to the present embodiment. Described firstly for convenience of explanation is a package structure including a heatsink with a shape having a convex portion on an edge portion of an upper surface covered by a molding material so that the convex portion protrudes more than an edge portion of a lower surface exposed from the molding material.
  • FIG. 10 is a cross-sectional view illustrating a package structure including a heatsink with a shape having a convex portion on an edge portion of an upper surface covered by the molding material so that the convex portion protrudes more than an edge portion of a lower surface exposed from the molding material.
  • the package structure includes a heatsink 901 made of metal, a semiconductor element 902 disposed on an upper surface of the heatsink 901 via a bonding material 1000 , a matching element 903 disposed on the upper surface of the heatsink 901 via a bonding material 1001 , a wire 907 electrically connecting the semiconductor element 902 and the matching element 903 , a lead 904 electrically connected to the semiconductor element 902 via a wire 906 and also electrically connected to an external circuit (not shown herein), a lead 905 electrically connected to the matching element 903 via a wire 908 and also electrically connected to an external circuit (not shown herein), and a molding material 909 formed to cover the upper surface of the heatsink 901 , the semiconductor element 902 , the matching element 903 , part of the lead 904 , and part of the lead 905 .
  • the molding material 909 also has a function of protecting the semiconductor element 902 and the matching element 903 in the package structure from contact with an
  • a lower surface of the heatsink 901 is exposed from the molding material 909 , and radiates heat generated from the semiconductor element 902 and the matching element 903 .
  • the semiconductor element 902 is a high-frequency power amplifying element which a high-frequency signal is input to or output from, for example.
  • the matching element 903 is an output matching circuit element of the semiconductor element 902 , for example.
  • the heatsink 901 has a shape with a convex portion 901 a and a convex portion 901 b laterally protruding on an edge portion of the upper surface covered by the molding material 909 , that is to say, a shape in which an upper side is longer than a lower side in FIG. 10 for purpose of anchoring the molding material 909 to the heatsink 901 , that is to say, producing anchor effect.
  • a parasitic inductance component on a heatsink 901 side becomes redundant in a region where the lead 904 and the heatsink 901 overlap with each other in an up-down direction and a region where the lead 905 and the heatsink 901 overlap with each other in the up-down direction when the package structure is mounted on an external structure and the lower surface of the heatsink 901 is grounded.
  • impedance in the lead 904 and the lead 905 cannot be reduced to a desired level.
  • FIG. 1 is a cross-sectional view along an X axis direction for schematically illustrating a configuration for achieving a semiconductor device according to the present embodiment.
  • the semiconductor device includes a heatsink 101 made of metal, a semiconductor element 102 disposed on an upper surface of the heatsink 101 via a bonding material 1000 , a matching element 103 disposed on the upper surface of the heatsink 101 via a bonding material 1001 , a wire 107 electrically connecting the semiconductor element 102 and the matching element 103 , a lead 104 electrically connected to the semiconductor element 102 via a wire 106 and also electrically connected to an external circuit (not shown herein), a lead 105 electrically connected to the matching element 103 via a wire 108 and also electrically connected to an external circuit (not shown herein), and a molding material 109 formed to cover the upper surface of the heatsink 101 , the semiconductor element 102 , the matching element 103 , part of the lead 104 , and part of the lead 105 .
  • the molding material 109 also has a function of protecting the semiconductor element 102 and the matching element 103 in the package structure from contact with an external circuit, for
  • the heatsink 101 has a convex portion 101 a and a convex portion 101 b laterally protruding on an edge portion of a lower surface of the heatsink 101 in a region where the heatsink 101 overlaps with the lead 104 or the lead 105 in an up-down direction, that is to say, in a position having the overlap in a plan view, and has a shape in which an upper side thereof is shorter than a lower side thereof.
  • a parasitic inductance component on a heatsink 101 side hardly becomes redundant when the semiconductor device is mounted on an external structure and the lower surface of the heatsink 101 is grounded.
  • an upper end and a lower end of the convex portion 101 a protrude in the similar manner, however, a degree of protrusion of the upper end and the lower end of the convex portion 101 a is not limited to be similar to each other. That is to say, it is also applicable that a protrusion amount of the upper end of the convex portion 101 a is small and a protrusion amount of the lower end thereof is large, thus the convex portion 101 a has an inclined shape (a tapered shape) in whole. In the similar manner, the convex portion 101 b may also have an inclined shape (a tapered shape) in whole.
  • FIG. 2 is a cross-sectional view along a Y axis direction for schematically illustrating a configuration for achieving the semiconductor device according to the present embodiment.
  • the heatsink 101 has a shape with a convex portion 101 c and a convex portion 101 d laterally protruding on the edge portion of the upper surface covered by the molding material 109 , that is to say, a shape in which the upper side is longer than the lower side in FIG. 2 for purpose of anchoring the molding material 109 to the heatsink 101 , that is to say, producing the anchor effect.
  • an upper end and a lower end of the convex portion 101 c protrude in the similar manner, however, a degree of protrusion of the upper end and the lower end of the convex portion 101 c is not limited to be similar to each other. In the similar manner, a degree of protrusion of an upper end and a lower end of the convex portion 101 d is not limited to be similar to each other.
  • the convex portion 101 c and the convex portion 101 d in the heatsink 101 do not overlap with the lead 104 and the lead 105 in the up-down direction, thus do not prevent the lead 104 and the lead 105 from reducing the impedance.
  • the convex portion 101 c and the convex portion 101 d in the heatsink 101 illustrated in FIG. 2 are also formed in the similar manner in a cross-sectional view along the Y axis direction in a configuration in the other embodiment described hereinafter as an example unless otherwise mentioned.
  • FIG. 3 is a perspective view illustrating a configuration of the heatsink according to the present embodiment.
  • a cross-sectional view along the X axis direction in FIG. 3 corresponds to FIG. 1 .
  • a cross-sectional view along the Y axis direction in FIG. 3 corresponds to FIG. 2 .
  • the parasitic inductance component in a lateral direction of the heatsink 101 is reduced in a region where the heatsink 101 overlaps with the lead 104 or the lead 105 in the up-down direction. Reduced is the parasitic inductance component at a time when a parasitic capacitance between the lead 104 and the heatsink 101 and a parasitic capacitance between the lead 105 and the heatsink 101 are grounded via the heatsink 101 . Accordingly, the impedance in the lead 104 and the lead 105 can be reduced.
  • the heatsink 101 has the shape in which the upper side is longer than the lower side in the region where the heatsink 101 does not overlap with the lead 104 and the lead 105 in the up-down direction, thus the anchor effect can be achieved without preventing the reduction in the impedance in the lead 104 and the lead 105 .
  • the same reference numerals as those described in the above embodiment will be assigned to the similar constituent elements in the drawings, and detailed description thereof is appropriately omitted.
  • FIG. 4 is a cross-sectional view along the X axis direction for schematically illustrating a configuration for achieving the semiconductor device according to the present embodiment.
  • the semiconductor device includes the heatsink 101 , the semiconductor element 102 , the matching element 103 , the wire 106 , the wire 107 , the wire 108 , the lead 104 , the lead 105 , and the molding material 109 .
  • the lower surface and the convex portions 101 a and 101 b which are the convex portions laterally protruding on the edge portion of the lower surface are grounded.
  • the same reference numerals as those described in the above embodiment will be assigned to the similar constituent elements in the drawings, and detailed description thereof is appropriately omitted.
  • FIG. 5 is a plan view illustrating a shape of the heatsink in a semiconductor device according to the present embodiment.
  • a cutting portion 226 in a heatsink 201 , a cutting portion 226 , a cutting portion 227 , a cutting portion 228 , and a cutting portion 229 are provided in regions which do not overlap with a lead 204 and a lead 205 in a plan view.
  • the convex portion 201 a and the convex portion 201 b are laterally formed on an edge portion of a lower surface of the heatsink 201 , and the cutting portion 226 , the cutting portion 227 , the cutting portion 228 , and the cutting portion 229 are formed in sides where the convex portion 201 a and the convex portion 201 b are not formed.
  • the convex portion 101 c and the convex portion 101 d illustrated in FIG. 2 are not formed in the heatsink 201 illustrated in FIG. 5 , however, the convex portion 101 c and the convex portion 101 d illustrated in FIG. 2 may further be formed therein.
  • FIG. 6 is a cross-sectional view illustrating a structure of covering and fixing the heatsink 201 , the lead 204 , and the lead 205 illustrated in FIG. 5 by a molding material 209 .
  • An illustration of a semiconductor element and a matching element covered by the molding material 209 is omitted for simplifying the drawing.
  • the cutting portion 226 , the cutting portion 227 , the cutting portion 228 , and the cutting portion 229 in the heatsink 201 are filled with the molding material 209 , thus the effect of anchoring the heatsink 201 and the molding material 209 , that is to say, the anchor effect can be achieved.
  • an upper end and a lower end of the convex portion 201 a protrude in the similar manner, however, a degree of protrusion of the upper end and the lower end of the convex portion 201 a is not limited to be similar to each other. That is to say, it is also applicable that a protrusion amount of the upper end of the convex portion 201 a is small and a protrusion amount of the lower end thereof is large, thus the convex portion 201 a has an inclined shape (a tapered shape) in whole. In the similar manner, the convex portion 201 b may also have an inclined shape (a tapered shape) in whole.
  • the same reference numerals as those described in the above embodiment will be assigned to the similar constituent elements in the drawings, and detailed description thereof is appropriately omitted.
  • FIG. 7 is a cross-sectional view along the X axis direction for schematically illustrating a configuration for achieving the semiconductor device according to the present embodiment.
  • FIG. 7 illustrates a mold shape used in a process of sealing with the molding material in the semiconductor device.
  • the semiconductor device includes a heatsink 301 , a semiconductor element 302 , a matching element 303 , a wire 306 , a wire 307 , a wire 308 , a lead 304 , a lead 305 , and a molding material 309 .
  • a convex portion 301 a and a convex portion 301 b are laterally formed on an edge portion of a lower surface of the heatsink 301 .
  • An upper surface side mold 321 , a lower surface side mold 322 , and a lower surface side mold 323 are used in the process of sealing with the molding material 309 .
  • a support substrate 324 is a substrate supporting the heatsink 301 .
  • the heatsink 301 whose lower surface is grounded is prepared firstly. Then, the semiconductor element 302 and the matching element 303 are disposed on an upper surface of the heatsink 301 via a bonding material. Then, the lead 304 electrically connected to the semiconductor element 302 via the wire 306 and the lead 305 electrically connected to the matching element 303 via the wire 308 are disposed on an upper side of the heatsink 301 .
  • the heatsink 301 are disposed to partially overlap with the lead 304 and the lead 305 in a plan view. Formed on an edge portion of a lower surface in a position, in the heatsink 301 , overlapping with the lead 304 in a plan view is a convex portion 301 a protruding more than an edge portion of an upper surface in the position. Formed on the edge portion of the lower surface in a position, in the heatsink 301 , overlapping with the lead 305 in a plan view is a convex portion 301 b protruding more than the edge portion of the upper surface in the position.
  • the molding material 309 covering part of the lead 304 , part of the heatsink 301 , and the semiconductor element 302 .
  • the molding material 309 is formed in such a manner as to expose at least an end portion of each of the convex portion 301 a and the convex portion 301 b in the heatsink 301 .
  • the support substrate 324 supporting the upper surface side mold 321 , the lower surface side mold 322 , the lower surface side mold 323 , and the heatsink 301 are used, thus the semiconductor device according to the present embodiment, for example, a high-frequency power amplifier can be manufactured.
  • the same reference numerals as those described in the above embodiment will be assigned to the similar constituent elements in the drawings, and detailed description thereof is appropriately omitted.
  • FIG. 8 is a cross-sectional view along the X axis direction for schematically illustrating a configuration for achieving the semiconductor device according to the present embodiment.
  • FIG. 8 illustrates a mold shape used in a process of sealing with the molding material in the semiconductor device.
  • the semiconductor device includes a heatsink 401 , the semiconductor element 302 , the matching element 303 , the wire 306 , the wire 307 , the wire 308 , the lead 304 , the lead 305 , and the molding material 309 .
  • the upper surface side mold 321 , a lower surface side mold 322 a , and a lower surface side mold 323 a are used in the process of sealing with the molding material 309 .
  • the support substrate 324 is the substrate supporting the heatsink 401 .
  • a convex portion 401 a and a convex portion 401 b are laterally formed on an edge portion of a lower surface of the heatsink 401 .
  • a shape of the mold and the heatsink 401 in FIG. 8 suppresses an intrusion of the molding material 309 around a side surface of the convex portion 401 a , a side surface of the convex portion 401 b , or a lower surface of the heatsink 401 in the process of sealing with the molding material 309 .
  • the heatsink 401 includes a notch 402 a formed in a lower surface of the convex portion 401 a and a notch 402 b formed in a lower surface of the convex portion 401 b .
  • a projection length of the lower surface of the heatsink 401 that is to say, a lateral protrusion length of each convex portion is set to be long enough to be able to prevent the intrusion of the molding material 309 .
  • the upper surface side mold 321 , the lower surface side mold 322 a , the lower surface side mold 323 a , and the support substrate 324 used in the process of sealing with the molding material 309 are removed, and subsequently, part of the heatsink 401 is cut at a position 403 a and a position 403 b , starting from the notch 402 a and the notch 402 b . Specifically, part of the convex portion 401 a and part of the convex portion 401 b are cut.
  • FIG. 9 is a drawing illustrating an outer shape of a package after being cut in the process subsequent to the formation of the molding material resin.
  • a region 501 a and a region 501 b correspond to the parts of the heatsink which has been cut, specifically to portions where the part of the convex portion 401 a and the part of the convex portion 401 b used to be, respectively.
  • the projection length of the lower side of the heatsink 401 that is to say, the lateral protrusion length of each convex portion is set to be long enough to be able to prevent the intrusion of the molding material 309 , thus the intrusion of the molding resin around the side surface of the convex portion 401 a , the side surface of the convex portion 401 b , or the lower surface of the heatsink 401 can be suppressed.
  • the impedance in the lead 304 and the lead 305 in FIG. 8 can be reduced while suppressing the intrusion of the molding resin.
  • the replacement may be implemented with a plurality of embodiments. That is to say, each of the configurations illustrated in the corresponding embodiments may be combined with one another to produce the similar effects.
  • the semiconductor device includes the heatsink 101 , the semiconductor element 102 , at least one lead 104 , and the molding material 109 .
  • At least the lower surface of the heatsink 101 is grounded.
  • the semiconductor element 102 is disposed on the upper surface of the heatsink 101 .
  • the high-frequency signal is input to or output from the semiconductor element 102 .
  • the lead 104 is electrically connected to the semiconductor element 102 via the wire 106 .
  • the lead 104 is disposed on the upper side of the heatsink 101 . Formed is the molding material 109 covering the part of the lead 104 , at least the upper surface of the heatsink 101 , and the semiconductor element 102 .
  • the heatsink 101 is disposed to partially overlap with the lead 104 in a plan view. Formed on the edge portion of the lower surface in the position, in the heatsink 101 , overlapping with the lead 104 in a plan view is at least first convex portion protruding more than the edge portion of the upper surface in the position. Formed on the edge portion of the upper surface in the position, in the heatsink 101 , not overlapping with the lead 104 in a plan view is at least second convex portion protruding more than the edge portion of the lower surface in the position.
  • the first convex portion corresponds to at least one of the convex portion 101 a , the convex portion 201 a , the convex portion 101 b , and the convex portion 201 b , for example.
  • the second convex portion corresponds to at least one of the convex portion 101 c and the convex portion 101 d , for example.
  • the parasitic inductance component in the lateral direction of the heatsink 101 is reduced in the region where the heatsink 101 overlaps with the lead 104 in the up-down direction. Reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead 104 and the heatsink 101 is grounded via the heatsink 101 . Accordingly, the impedance in the lead 104 can be reduced. That is to say, the impedance in the lead connected to the semiconductor element 102 can be reduced while achieving the effect of anchoring the molding material by the convex portion 101 c and the convex portion 101 d.
  • the convex portion 101 a in the heatsink 101 is exposed from the molding material 109 .
  • the lower surface and the convex portion 101 a in the heatsink 101 are grounded. According to such a configuration, not also the lower surface but also the convex portion 101 a in the heatsink 101 are grounded, thus further reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead 104 and the heatsink 101 is grounded via the heatsink 101 .
  • At least one cutting portion 226 is formed in the edge portion of the upper surface in the position, in the heatsink 201 , which does not overlap with the lead 204 in a plan view. Then, the cutting portion 226 is filled with the molding material 209 . According to such a configuration, the cutting portion 226 in the heatsink 201 is filled with the molding material 209 , thus the effect of anchoring the heatsink 201 and the molding material 209 , that is to say, the anchor effect can be achieved.
  • the semiconductor device includes the heatsink 201 , the semiconductor element 102 , at least one lead 204 , and the molding material 209 .
  • At least the lower surface of the heatsink 201 is grounded.
  • the semiconductor element 102 is disposed on the upper surface of the heatsink 201 , and the high-frequency signal is input to or output from the semiconductor element 102 .
  • the lead 204 is electrically connected to the semiconductor element 102 via the wire 106 .
  • the lead 204 is disposed on the upper side of the heatsink 201 . Formed is the molding material 209 covering the part of the lead 204 , at least the upper surface of the heatsink 201 , and the semiconductor element 102 .
  • the heatsink 201 is disposed to partially overlap with the lead 204 in a plan view. Formed on the edge portion of the lower surface in the position, in the heatsink 201 , overlapping with the lead 204 in a plan view is at least one convex portion 201 a protruding more than the edge portion of the upper surface in the position. At least one cutting portion 226 is formed in the edge portion of the upper surface in the position, in the heatsink 201 , which does not overlap with the lead 204 in a plan view. Then, the cutting portion 226 is filled with the molding material 209 .
  • the cutting portion 226 in the heatsink 201 is filled with the molding material 209 , thus the effect of anchoring the heatsink 201 and the molding material 209 , that is to say, the anchor effect can be achieved.
  • the parasitic inductance component in the lateral direction of the heatsink 201 is reduced in the region where the heatsink 201 overlaps with the lead 204 in the up-down direction. Reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead 204 and the heatsink 201 is grounded via the heatsink 201 . Accordingly, the impedance in the lead 204 can be reduced. That is to say, the reduction in the impedance in the lead connected to the semiconductor element 102 can be achieved while achieving the effect of anchoring the molding material by the cutting portion 226 .
  • the convex portion 201 a in the heatsink 201 is exposed from the molding material 209 .
  • the lower surface and the convex portion 201 a in the heatsink 201 are grounded. According to such a configuration, not also the lower surface but also the convex portion 201 a in the heatsink 201 are grounded, thus further reduced is the parasitic inductance component at the time when the parasitic capacitance between the lead 204 and the heatsink 201 is grounded via the heatsink 201 .
  • the high-frequency power amplifier includes the semiconductor device described above. According to such a configuration, the impedance in the lead can be reduced, thus the high-frequency performance can be enhanced.
  • the heatsink 401 at least whose lower surface is grounded is prepared in the method of manufacturing the semiconductor device. Then, disposed on the upper surface of the heatsink 401 is the semiconductor element 302 which the high-frequency signal is input to or output from. Then, at least one lead 304 electrically connected to the semiconductor element 302 via the wire 306 is disposed on the upper side of the heatsink 401 .
  • the heatsink 401 is disposed to partially overlap with the lead 304 in a plan view.
  • the molding material 309 is formed in such a manner as to expose at least the end portion of the first convex portion in the heatsink 401 . Then, the end portion of the first convex portion is cut after forming the molding material 309 .
  • the first convex portion corresponds to at least one of the convex portion 401 a and the convex portion 401 b , for example.
  • the second convex portion corresponds to at least one of the convex portion 101 c and the convex portion 101 d , for example.
  • the projection length of the lower side of the heatsink 401 is set to be long enough to be able to prevent the intrusion of the molding material 309 , thus the intrusion of the molding resin around the side surface of the convex portion 401 a , the side surface of the convex portion 401 b , or the lower surface of the heatsink 401 can be suppressed. Accordingly, the semiconductor device capable of reducing the impedance in the lead 304 and the lead 305 while suppressing the intrusion of the molding resin can be manufactured.
  • the end portion of the convex portion 401 a is cut from the notch 402 a in the convex portion 401 a . According to such a configuration, a tip portion of the convex portion 401 a can be easily cut from a predetermined position.
  • the “one” constituent element described in the above embodiments may be “one or more” constituent elements so far as consistent with the embodiments.
  • constituent elements are conceptual units. Thus, within the range of the technique disclosed in the specification of the present application, one constituent element may include multiple structures, one constituent element may correspond to part of some structure, and multiple constituent elements may be included in one structure.
  • Each constituent element includes a structure having a different configuration or a different shape as long as the structure of the different configuration or the different shape achieves the same function.

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JP6289792B1 (ja) 2018-03-07
WO2019064431A1 (fr) 2019-04-04
CN111133571B (zh) 2024-03-08
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KR102420700B1 (ko) 2022-07-13
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