US10412327B2 - Image sensor and electronic apparatus with different exposure times for different pixel blocks - Google Patents

Image sensor and electronic apparatus with different exposure times for different pixel blocks Download PDF

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Publication number
US10412327B2
US10412327B2 US15/745,226 US201615745226A US10412327B2 US 10412327 B2 US10412327 B2 US 10412327B2 US 201615745226 A US201615745226 A US 201615745226A US 10412327 B2 US10412327 B2 US 10412327B2
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pixel
image sensor
pixels
pixel blocks
control signal
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US20180227514A1 (en
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Tomohiro Takahashi
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION reassignment SONY SEMICONDUCTOR SOLUTIONS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKAHASHI, TOMOHIRO
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H04N5/3535—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H04N5/2353—
    • H04N5/353—
    • H04N5/3745—
    • H04N5/37455—
    • H04N5/379—

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
US15/745,226 2015-07-24 2016-07-11 Image sensor and electronic apparatus with different exposure times for different pixel blocks Active US10412327B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015146772 2015-07-24
JP2015-146772 2015-07-24
PCT/JP2016/070432 WO2017018188A1 (ja) 2015-07-24 2016-07-11 イメージセンサ、及び、電子機器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/070432 A-371-Of-International WO2017018188A1 (ja) 2015-07-24 2016-07-11 イメージセンサ、及び、電子機器

Related Child Applications (1)

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US16/545,559 Continuation US10645313B2 (en) 2015-07-24 2019-08-20 Image sensor and electronic apparatus

Publications (2)

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US20180227514A1 US20180227514A1 (en) 2018-08-09
US10412327B2 true US10412327B2 (en) 2019-09-10

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US15/745,226 Active US10412327B2 (en) 2015-07-24 2016-07-11 Image sensor and electronic apparatus with different exposure times for different pixel blocks
US16/545,559 Active US10645313B2 (en) 2015-07-24 2019-08-20 Image sensor and electronic apparatus

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US16/545,559 Active US10645313B2 (en) 2015-07-24 2019-08-20 Image sensor and electronic apparatus

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US (2) US10412327B2 (zh)
JP (1) JP6833688B2 (zh)
KR (2) KR102514137B1 (zh)
CN (2) CN113660430B (zh)
WO (1) WO2017018188A1 (zh)

Cited By (4)

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US20190373188A1 (en) * 2015-07-24 2019-12-05 Sony Semiconductor Solutions Corporation Image sensor and electronic apparatus
US11368648B2 (en) * 2018-04-25 2022-06-21 Hangzhou Hikvision Digital Technology Co., Ltd. Image storage method and apparatus, and electronic device and storage medium
US20230126104A1 (en) * 2020-02-17 2023-04-27 Nikon Corporation Image capturing device and image capturing apparatus
US11785356B2 (en) 2018-09-21 2023-10-10 Canon Kabushiki Kaisha Photoelectric conversion device with mask circuits

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US11924573B2 (en) * 2016-03-15 2024-03-05 Trustees Of Dartmouth College Stacked backside-illuminated quanta image sensor with cluster-parallel readout
JP2019004382A (ja) * 2017-06-16 2019-01-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US10880293B2 (en) * 2017-08-25 2020-12-29 Ford Global Technologies, Llc Authentication of vehicle-to-vehicle communications
EP3462731B1 (en) * 2017-09-29 2021-11-10 Canon Kabushiki Kaisha Imaging device, imaging system, and moving body
US10540733B2 (en) * 2017-11-16 2020-01-21 The Boeing Company Frameless random-access image sensing
US11019274B2 (en) * 2018-09-10 2021-05-25 Tusimple, Inc. Adaptive illumination for a time-of-flight camera on a vehicle
WO2020093197A1 (en) * 2018-11-05 2020-05-14 Huawei Technologies Co., Ltd. Image sensor and control method therefor
CN111193882A (zh) * 2018-11-15 2020-05-22 格科微电子（上海）有限公司 单帧高动态范围图像传感器的实现方法
JP6824363B1 (ja) * 2019-10-30 2021-02-03 浜松ホトニクス株式会社 イメージセンサ、及びイメージセンサの制御方法
JP2021082934A (ja) 2019-11-19 2021-05-27 キヤノン株式会社 撮像装置及び撮像システム
WO2021166978A1 (ja) * 2020-02-17 2021-08-26 株式会社ニコン 撮像素子及び撮像装置
US11932238B2 (en) 2020-06-29 2024-03-19 Tusimple, Inc. Automated parking technology
JP2022094796A (ja) 2020-12-15 2022-06-27 キヤノン株式会社 撮像装置、制御方法、プログラム及び記憶媒体
CN113194235B (zh) * 2021-04-29 2022-11-08 维沃移动通信有限公司 像素传感器系统、摄像模组及电子设备
CN113194264B (zh) * 2021-04-29 2023-04-25 维沃移动通信有限公司 偏色调整方法、装置、电子设备及存储介质
CN113242393B (zh) * 2021-05-27 2023-04-18 哈尔滨工程大学 一种二维微小光斑阵列发生装置

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WO2013164915A1 (ja) 2012-05-02 2013-11-07 株式会社ニコン 撮像装置
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JP2013066140A (ja) * 2011-08-31 2013-04-11 Sony Corp 撮像装置、および信号処理方法、並びにプログラム
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190373188A1 (en) * 2015-07-24 2019-12-05 Sony Semiconductor Solutions Corporation Image sensor and electronic apparatus
US10645313B2 (en) * 2015-07-24 2020-05-05 Sony Semiconductor Solutions Corporation Image sensor and electronic apparatus
US11368648B2 (en) * 2018-04-25 2022-06-21 Hangzhou Hikvision Digital Technology Co., Ltd. Image storage method and apparatus, and electronic device and storage medium
US11785356B2 (en) 2018-09-21 2023-10-10 Canon Kabushiki Kaisha Photoelectric conversion device with mask circuits
US20230126104A1 (en) * 2020-02-17 2023-04-27 Nikon Corporation Image capturing device and image capturing apparatus

Also Published As

Publication number Publication date
US10645313B2 (en) 2020-05-05
US20180227514A1 (en) 2018-08-09
CN113660430B (zh) 2023-06-20
KR20230042395A (ko) 2023-03-28
KR20180033162A (ko) 2018-04-02
KR102632643B1 (ko) 2024-02-02
CN113660430A (zh) 2021-11-16
KR102514137B1 (ko) 2023-03-27
WO2017018188A1 (ja) 2017-02-02
JPWO2017018188A1 (ja) 2018-05-10
CN107925730A (zh) 2018-04-17
CN107925730B (zh) 2021-07-20
JP6833688B2 (ja) 2021-02-24
US20190373188A1 (en) 2019-12-05

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