UA44823C2 - Пристрій для помноження напруги - Google Patents

Пристрій для помноження напруги Download PDF

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Publication number
UA44823C2
UA44823C2 UA98073807A UA98073807A UA44823C2 UA 44823 C2 UA44823 C2 UA 44823C2 UA 98073807 A UA98073807 A UA 98073807A UA 98073807 A UA98073807 A UA 98073807A UA 44823 C2 UA44823 C2 UA 44823C2
Authority
UA
Ukraine
Prior art keywords
transistor
transistors
voltage
pump
output
Prior art date
Application number
UA98073807A
Other languages
English (en)
Russian (ru)
Ukrainian (uk)
Inventor
Крістл Лаутербах
Вернер ВЕБЕР
Original Assignee
Сіменс Акцієнгезельшафт
Сименс Акциенгезельшафт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сіменс Акцієнгезельшафт, Сименс Акциенгезельшафт filed Critical Сіменс Акцієнгезельшафт
Publication of UA44823C2 publication Critical patent/UA44823C2/uk

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
UA98073807A 1996-01-16 1996-12-10 Пристрій для помноження напруги UA44823C2 (uk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19601369A DE19601369C1 (de) 1996-01-16 1996-01-16 Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM
PCT/DE1996/002387 WO1997026657A1 (de) 1996-01-16 1996-12-10 Vorrichtung zur spannungsvervielfachung

Publications (1)

Publication Number Publication Date
UA44823C2 true UA44823C2 (uk) 2002-03-15

Family

ID=7782884

Family Applications (1)

Application Number Title Priority Date Filing Date
UA98073807A UA44823C2 (uk) 1996-01-16 1996-12-10 Пристрій для помноження напруги

Country Status (11)

Country Link
EP (1) EP0875063B1 (enEXAMPLES)
JP (1) JP3154727B2 (enEXAMPLES)
KR (1) KR100397078B1 (enEXAMPLES)
CN (1) CN1106647C (enEXAMPLES)
AT (1) ATE181172T1 (enEXAMPLES)
DE (2) DE19601369C1 (enEXAMPLES)
ES (1) ES2135270T3 (enEXAMPLES)
IN (1) IN191530B (enEXAMPLES)
RU (1) RU2159472C2 (enEXAMPLES)
UA (1) UA44823C2 (enEXAMPLES)
WO (1) WO1997026657A1 (enEXAMPLES)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
KR100466198B1 (ko) * 1997-12-12 2005-04-08 주식회사 하이닉스반도체 승압회로
JP3385960B2 (ja) 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP4393182B2 (ja) 2003-05-19 2010-01-06 三菱電機株式会社 電圧発生回路
DE102005033003A1 (de) * 2005-07-14 2007-01-25 Infineon Technologies Ag Integrierte Schaltungsanordnung zur Potenzialerhöhung
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
CN101662208B (zh) * 2008-08-26 2013-10-30 天利半导体（深圳）有限公司 一种实现正负高压的电荷泵电路
US20130257522A1 (en) * 2012-03-30 2013-10-03 Tyler Daigle High input voltage charge pump
US9766171B2 (en) 2014-03-17 2017-09-19 Columbia Insurance Company Devices, systems and method for flooring performance testing
RU2762290C9 (ru) * 2020-11-30 2022-01-31 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" Инвертирующий повышающий преобразователь постоянного напряжения

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
JP2771729B2 (ja) * 1992-04-16 1998-07-02 三菱電機株式会社 チャージポンプ回路
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
EP0931379B1 (en) 1996-10-10 2008-08-06 Macronix International Co., Ltd. Triple well charge pump

Also Published As

Publication number Publication date
JP3154727B2 (ja) 2001-04-09
KR100397078B1 (ko) 2003-10-17
ES2135270T3 (es) 1999-10-16
EP0875063B1 (de) 1999-06-09
CN1106647C (zh) 2003-04-23
KR19990077291A (ko) 1999-10-25
WO1997026657A1 (de) 1997-07-24
RU2159472C2 (ru) 2000-11-20
ATE181172T1 (de) 1999-06-15
DE19601369C1 (de) 1997-04-10
JPH11503261A (ja) 1999-03-23
CN1207824A (zh) 1999-02-10
DE59602202D1 (de) 1999-07-15
IN191530B (enEXAMPLES) 2003-12-06
EP0875063A1 (de) 1998-11-04

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