UA102239C2 - Способ очистки галогенсиланов технической чистоты от элементов главной подгруппы третьей группы и установка для осуществления способа - Google Patents

Способ очистки галогенсиланов технической чистоты от элементов главной подгруппы третьей группы и установка для осуществления способа

Info

Publication number
UA102239C2
UA102239C2 UAA201010057A UAA201010057A UA102239C2 UA 102239 C2 UA102239 C2 UA 102239C2 UA A201010057 A UAA201010057 A UA A201010057A UA A201010057 A UAA201010057 A UA A201010057A UA 102239 C2 UA102239 C2 UA 102239C2
Authority
UA
Ukraine
Prior art keywords
halosilanes
elements
main group
installation
carrying
Prior art date
Application number
UAA201010057A
Other languages
English (en)
Russian (ru)
Ukrainian (uk)
Inventor
Эккехард Мю
Хартвиг Рауледер
Райнхольд ШОРК
Original Assignee
Эвоник Дегусса Гмбх
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Эвоник Дегусса Гмбх filed Critical Эвоник Дегусса Гмбх
Publication of UA102239C2 publication Critical patent/UA102239C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
UAA201010057A 2008-01-14 2008-11-20 Способ очистки галогенсиланов технической чистоты от элементов главной подгруппы третьей группы и установка для осуществления способа UA102239C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008004397A DE102008004397A1 (de) 2008-01-14 2008-01-14 Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen sowie Anlage zur Durchführung des Verfahrens
PCT/EP2008/065892 WO2009089950A2 (de) 2008-01-14 2008-11-20 Verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen sowie anlage zur durchführung des verfahrens

Publications (1)

Publication Number Publication Date
UA102239C2 true UA102239C2 (ru) 2013-06-25

Family

ID=40546089

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201010057A UA102239C2 (ru) 2008-01-14 2008-11-20 Способ очистки галогенсиланов технической чистоты от элементов главной подгруппы третьей группы и установка для осуществления способа

Country Status (13)

Country Link
US (1) US20100278706A1 (enExample)
EP (1) EP2229342B1 (enExample)
JP (1) JP2011509907A (enExample)
KR (1) KR20100112574A (enExample)
CN (1) CN101486463A (enExample)
AT (1) ATE523469T1 (enExample)
BR (1) BRPI0822183A2 (enExample)
CA (1) CA2711546A1 (enExample)
DE (1) DE102008004397A1 (enExample)
ES (1) ES2371999T3 (enExample)
RU (1) RU2504515C2 (enExample)
UA (1) UA102239C2 (enExample)
WO (1) WO2009089950A2 (enExample)

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ITRM20040570A1 (it) * 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
DE102005041137A1 (de) 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
DE102007007874A1 (de) * 2007-02-14 2008-08-21 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Silane
DE102007059170A1 (de) * 2007-12-06 2009-06-10 Evonik Degussa Gmbh Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen
DE102008002537A1 (de) * 2008-06-19 2009-12-24 Evonik Degussa Gmbh Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens
DE102008054537A1 (de) * 2008-12-11 2010-06-17 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration
DE102009027730A1 (de) 2009-07-15 2011-01-27 Evonik Degussa Gmbh Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen
JP5387267B2 (ja) * 2009-09-17 2014-01-15 三菱マテリアル株式会社 クロロシラン精製装置及び精製方法
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010002342A1 (de) 2010-02-25 2011-08-25 Evonik Degussa GmbH, 45128 Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren
DE102011004058A1 (de) 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
DE102011004750A1 (de) 2011-02-25 2012-08-30 Evonik Degussa Gmbh Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials
DE102014203810A1 (de) * 2014-03-03 2015-09-03 Evonik Degussa Gmbh Verfahren zur Herstellung reiner Octachlortrisilane und Decachlortetrasilane
JP6095613B2 (ja) * 2014-07-10 2017-03-15 信越化学工業株式会社 クロロシランの精製方法
KR102517182B1 (ko) 2014-08-15 2023-04-04 메사추세츠 인스티튜트 오브 테크놀로지 활성 제약 성분을 포함한 화학적 생성물의 합성을 위한 시스템 및 방법
US10252916B2 (en) * 2014-09-04 2019-04-09 Corner Star Limited Methods for separating halosilanes
EP3452220A4 (en) 2016-05-02 2020-01-01 Massachusetts Institute of Technology RECONFIGURABLE MULTI-STAGE CHEMICAL SYNTHESIS SYSTEM AND COMPONENTS AND RELATED METHODS
CN106744685B (zh) * 2016-11-21 2018-10-23 亚洲硅业（青海）有限公司 电子级多晶硅生产中循环氢气的深度净化方法
EP3659964A1 (en) 2018-11-28 2020-06-03 Hysilabs, SAS Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds
CN112010313A (zh) * 2019-05-31 2020-12-01 新特能源股份有限公司 一种多晶硅副产物渣料处理工艺及系统
JP7512388B2 (ja) 2019-11-27 2024-07-08 ワッカー ケミー アクチエンゲゼルシャフト クロロシラン混合物から不純物を除去する方法
RU2759500C1 (ru) * 2021-03-12 2021-11-15 Лев Эдуардович Барышников Способ очистки гексахлордисилана от примесей хлоридов металлов

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GB834380A (en) * 1957-04-25 1960-05-04 Licentia Gmbh A method of producing purified silicon halide
NL235008A (enExample) * 1958-01-11
FR1518553A (fr) 1960-03-11 1968-03-29 Pechiney Prod Chimiques Sa Procédé de purification de composés volatils de germanium et de silicium
DE1792651A1 (de) * 1968-09-28 1971-11-25 Dynamit Nobel Ag Verfahren zur Reinigung von Chlorsilanen
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4374110A (en) * 1981-06-15 1983-02-15 Motorola, Inc. Purification of silicon source materials
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
RU1835386C (ru) * 1991-04-17 1993-08-23 Запорожский титано-магниевый комбинат Способ очистки хлорсиланов
JPH0731104B2 (ja) * 1991-10-31 1995-04-10 住友シチックス株式会社 トリクロロシラン溶液中の超微量成分捕集方法
DE102004045245B4 (de) * 2004-09-17 2007-11-15 Degussa Gmbh Vorrichtung und Verfahren zur Herstellung von Silanen
ITRM20040570A1 (it) * 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
RU2280010C1 (ru) * 2004-12-10 2006-07-20 Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения трихлорсилана

Also Published As

Publication number Publication date
RU2504515C2 (ru) 2014-01-20
RU2010133878A (ru) 2012-02-27
EP2229342A2 (de) 2010-09-22
DE102008004397A1 (de) 2009-07-16
WO2009089950A3 (de) 2010-01-28
EP2229342B1 (de) 2011-09-07
JP2011509907A (ja) 2011-03-31
ES2371999T3 (es) 2012-01-12
KR20100112574A (ko) 2010-10-19
ATE523469T1 (de) 2011-09-15
CN101486463A (zh) 2009-07-22
WO2009089950A2 (de) 2009-07-23
US20100278706A1 (en) 2010-11-04
BRPI0822183A2 (pt) 2015-06-23
CA2711546A1 (en) 2009-07-23

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