TWI908883B - 負型感光性樹脂組成物 - Google Patents

負型感光性樹脂組成物

Info

Publication number
TWI908883B
TWI908883B TW110134817A TW110134817A TWI908883B TW I908883 B TWI908883 B TW I908883B TW 110134817 A TW110134817 A TW 110134817A TW 110134817 A TW110134817 A TW 110134817A TW I908883 B TWI908883 B TW I908883B
Authority
TW
Taiwan
Prior art keywords
resin composition
ring
mol
parts
polymer
Prior art date
Application number
TW110134817A
Other languages
English (en)
Chinese (zh)
Other versions
TW202216820A (zh
Inventor
堤隆志
Original Assignee
日商日本瑞翁股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本瑞翁股份有限公司 filed Critical 日商日本瑞翁股份有限公司
Publication of TW202216820A publication Critical patent/TW202216820A/zh
Application granted granted Critical
Publication of TWI908883B publication Critical patent/TWI908883B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
TW110134817A 2020-09-29 2021-09-17 負型感光性樹脂組成物 TWI908883B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-164168 2020-09-29
JP2020164168 2020-09-29

Publications (2)

Publication Number Publication Date
TW202216820A TW202216820A (zh) 2022-05-01
TWI908883B true TWI908883B (zh) 2025-12-21

Family

ID=80951401

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110134817A TWI908883B (zh) 2020-09-29 2021-09-17 負型感光性樹脂組成物

Country Status (6)

Country Link
US (1) US12601971B2 (https=)
JP (1) JP7786384B2 (https=)
KR (1) KR102786311B1 (https=)
CN (1) CN116075534B (https=)
TW (1) TWI908883B (https=)
WO (1) WO2022070871A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023053976A1 (ja) * 2021-09-29 2023-04-06 日本ゼオン株式会社 樹脂組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006139284A (ja) * 2005-11-10 2006-06-01 Jsr Corp 半導体デバイス製造用感放射線性樹脂組成物
JP2008026600A (ja) * 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2011154264A (ja) * 2010-01-28 2011-08-11 Shibaura Institute Of Technology イオンビーム描画用ネガ型レジスト組成物及びパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
DE19742980A1 (de) * 1997-09-29 1999-04-01 Espe Dental Ag Dentalmassen auf der Basis von ROMP-Oligomeren oder -Polymeren
JP2006106530A (ja) * 2004-10-08 2006-04-20 Sumitomo Bakelite Co Ltd 表示体装置カラーフィルター用感光性樹脂組成物及びこれを用いた表示装置、表示体装置の製造方法
JP2006156821A (ja) 2004-11-30 2006-06-15 Sumitomo Bakelite Co Ltd 樹脂組成物、樹脂層、樹脂層付きキャリア材料および回路基板
CN103221453A (zh) * 2011-03-28 2013-07-24 日本瑞翁株式会社 热固化性交联环状烯烃树脂组合物、热固化性交联环状烯烃树脂膜、热固化性交联环状烯烃树脂组合物的制造方法及热固化性交联环状烯烃树脂膜的制造方法
TWI636330B (zh) * 2013-05-29 2018-09-21 Sumitomo Bakelite Co., Ltd. 負型感光性樹脂組成物、電子裝置及聚合物
JP6530410B2 (ja) * 2013-09-10 2019-06-12 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ オキシムエステル光開始剤
CN105993065B (zh) * 2013-11-28 2019-03-08 国立大学法人东北大学 半导体元件的制造方法
EP2982709B1 (en) * 2014-08-07 2017-06-28 Telene SAS Curable composition and molded article comprising the composition
CN110178085B (zh) * 2017-01-10 2022-10-21 住友电木株式会社 负型感光性树脂组合物、树脂膜和电子装置
EP3861032A4 (en) * 2018-10-03 2022-08-03 Materia, Inc. POLYMERS FOR SPECIAL APPLICATIONS

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006139284A (ja) * 2005-11-10 2006-06-01 Jsr Corp 半導体デバイス製造用感放射線性樹脂組成物
JP2008026600A (ja) * 2006-07-21 2008-02-07 Shin Etsu Chem Co Ltd レジスト下層膜形成材料及びパターン形成方法
JP2011154264A (ja) * 2010-01-28 2011-08-11 Shibaura Institute Of Technology イオンビーム描画用ネガ型レジスト組成物及びパターン形成方法

Also Published As

Publication number Publication date
CN116075534A (zh) 2023-05-05
JP7786384B2 (ja) 2025-12-16
WO2022070871A1 (ja) 2022-04-07
JPWO2022070871A1 (https=) 2022-04-07
US20230305397A1 (en) 2023-09-28
KR102786311B1 (ko) 2025-03-24
CN116075534B (zh) 2025-08-01
US12601971B2 (en) 2026-04-14
KR20230076126A (ko) 2023-05-31
TW202216820A (zh) 2022-05-01

Similar Documents

Publication Publication Date Title
TWI411876B (zh) 光敏介電樹脂組成物、由其形成之薄膜、及包括此薄膜之半導體及顯示裝置
KR100305127B1 (ko) 부분적으로중합된수지
TWI716619B (zh) 納迪克酸酐聚合物及由其衍生的光敏組成物
TWI746825B (zh) 輻射敏感樹脂組成物及電子元件
KR102859438B1 (ko) 감광성 수지 조성물 및 그의 경화막
CN109313388B (zh) 负型感光性组合物
TWI780066B (zh) 接著劑組成物及其利用
CN115667404A (zh) 固化性树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件
TWI908883B (zh) 負型感光性樹脂組成物
KR20240122451A (ko) 중합체 및 그 제조 방법, 수지 조성물, 그리고 전자 부품
KR102049820B1 (ko) 개환 메타세시스 중합체 수소화물의 제조 방법 및 수지 조성물
TWI684826B (zh) 可光成像組成物、硬化產物形成方法、硬化產物及包含該硬化產物的光電子或微電子裝置
TW202330660A (zh) 樹脂組成物
TWI846894B (zh) 樹脂組成物、電子零件及樹脂膜之製造方法
TWI901852B (zh) 樹脂組成物
TWI805898B (zh) 樹脂組成物、樹脂膜及電子零件
CN115113484A (zh) 正型感光性树脂组成物、正型感光性干薄膜及其制造方法、图案形成方法
TW202424036A (zh) 樹脂組成物
JPH07271036A (ja) 感光性樹脂組成物
TW202500633A (zh) 樹脂組成物
WO2025204955A1 (ja) 紫外線硬化性組成物、硬化膜及び有機ｅｌ表示装置
CN111770964B (zh) 树脂组合物和电子部件
WO2022080195A1 (ja) 感放射線性樹脂組成物