TWI908100B - 荷電粒子束裝置 - Google Patents

荷電粒子束裝置

Info

Publication number
TWI908100B
TWI908100B TW113119931A TW113119931A TWI908100B TW I908100 B TWI908100 B TW I908100B TW 113119931 A TW113119931 A TW 113119931A TW 113119931 A TW113119931 A TW 113119931A TW I908100 B TWI908100 B TW I908100B
Authority
TW
Taiwan
Prior art keywords
charged particle
particle beam
imaging conditions
patterns
scanning
Prior art date
Application number
TW113119931A
Other languages
English (en)
Chinese (zh)
Other versions
TW202501532A (zh
Inventor
倉迫奈浦
横須賀俊之
小辻秀幸
白石勝彦
川野源
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202501532A publication Critical patent/TW202501532A/zh
Application granted granted Critical
Publication of TWI908100B publication Critical patent/TWI908100B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW113119931A 2023-06-27 2024-05-30 荷電粒子束裝置 TWI908100B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/023832 WO2025004191A1 (ja) 2023-06-27 2023-06-27 荷電粒子線装置
WOPCT/JP2023/023832 2023-06-27

Publications (2)

Publication Number Publication Date
TW202501532A TW202501532A (zh) 2025-01-01
TWI908100B true TWI908100B (zh) 2025-12-11

Family

ID=93937826

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113119931A TWI908100B (zh) 2023-06-27 2024-05-30 荷電粒子束裝置

Country Status (4)

Country Link
JP (1) JPWO2025004191A1 (https=)
KR (1) KR20250150034A (https=)
TW (1) TWI908100B (https=)
WO (1) WO2025004191A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022185390A1 (ja) * 2021-03-01 2022-09-09 株式会社日立ハイテク 荷電粒子線装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020187582A1 (en) * 2000-04-18 2002-12-12 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US20050190310A1 (en) * 2003-12-04 2005-09-01 Hikaru Koyama Inspection method and apparatus using charged particle beam
CN101443877A (zh) * 2006-03-27 2009-05-27 多束系统公司 用于生成高电流密度构图带电粒子束的光学器件
TW202041854A (zh) * 2019-05-13 2020-11-16 日商日立全球先端科技股份有限公司 圖案評估系統及圖案評估方法
TW202236345A (zh) * 2021-03-01 2022-09-16 日商日立全球先端科技股份有限公司 帶電粒子線裝置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268522A (ja) * 2004-03-18 2005-09-29 Sony Corp 露光装置、露光方法および半導体装置の製造方法
JP5188529B2 (ja) 2010-03-30 2013-04-24 株式会社日立ハイテクノロジーズ 電子ビーム照射方法、及び走査電子顕微鏡
JP5823136B2 (ja) * 2011-02-10 2015-11-25 株式会社日立ハイテクノロジーズ 走査型荷電粒子顕微鏡及び試料観察方法
DE112014003984B4 (de) 2013-09-26 2020-08-06 Hitachi High-Technologies Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020187582A1 (en) * 2000-04-18 2002-12-12 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US20050190310A1 (en) * 2003-12-04 2005-09-01 Hikaru Koyama Inspection method and apparatus using charged particle beam
CN101443877A (zh) * 2006-03-27 2009-05-27 多束系统公司 用于生成高电流密度构图带电粒子束的光学器件
TW202041854A (zh) * 2019-05-13 2020-11-16 日商日立全球先端科技股份有限公司 圖案評估系統及圖案評估方法
TW202236345A (zh) * 2021-03-01 2022-09-16 日商日立全球先端科技股份有限公司 帶電粒子線裝置

Also Published As

Publication number Publication date
WO2025004191A1 (ja) 2025-01-02
JPWO2025004191A1 (https=) 2025-01-02
TW202501532A (zh) 2025-01-01
KR20250150034A (ko) 2025-10-17

Similar Documents

Publication Publication Date Title
JP4988444B2 (ja) 検査方法および装置
JP5474087B2 (ja) 集積回路デバイス構造をナノプロービングするための方法（集積回路デバイス構造のナノプロービング）
US7791022B2 (en) Scanning electron microscope with length measurement function and dimension length measurement method
JP6966255B2 (ja) 画像取得装置の光学系調整方法
JP4914604B2 (ja) 電子線検査装置を用いたパターン欠陥検査方法及びそのシステム、並びに写像投影型又はマルチビーム型電子線検査装置
NL2021301B1 (en) Charged particle beam device, charged particle beam influencing device, and method of operating a charged particle beam device
CN112840431A (zh) 带电粒子束设备、场曲校正器、及操作带电粒子束设备的方法
KR102827008B1 (ko) 낮은 누화를 갖는 다중 하전 입자 빔 장치
TW202020918A (zh) 用於多帶電粒子束的設備
WO2011016208A1 (ja) 走査型電子顕微鏡及び試料観察方法
US7521678B2 (en) Charged particle beam apparatus, charged particle beam focusing method, microstructure measuring method, microstructure inspecting method, semiconductor device manufacturing method, and program
TW202013417A (zh) 多電子束畫像取得裝置以及多電子束畫像取得方法
JP2021516416A (ja) 信号電子検出性能を向上させたマルチビーム検査装置
US6512227B2 (en) Method and apparatus for inspecting patterns of a semiconductor device with an electron beam
CN108604522A (zh) 带电粒子束装置以及带电粒子束装置的调整方法
TW202220014A (zh) 用於具有複數個小射束之裝置之二次電子投影成像系統之反掃描操作模式
TWI908100B (zh) 荷電粒子束裝置
JP2007265931A (ja) 検査装置及び検査方法
EP3846197A1 (en) Apparatus for and method of control of a charged particle beam
JP4702472B2 (ja) 電子ビームを用いた検査方法及び検査装置
CN118019972A (zh) 组合聚焦离子束铣削及扫描电子显微镜成像
JP4334159B2 (ja) 基板検査システムおよび基板検査方法
US20250112017A1 (en) Imaging thousands of electron beams during workpiece inspection
EP4060714A1 (en) Flood column and charged particleapparatus
JP2025130500A (ja) 電子ビーム画像取得装置および電子ビーム画像取得方法