TWI907078B - 晶圓處理裝置 - Google Patents

晶圓處理裝置

Info

Publication number
TWI907078B
TWI907078B TW113135763A TW113135763A TWI907078B TW I907078 B TWI907078 B TW I907078B TW 113135763 A TW113135763 A TW 113135763A TW 113135763 A TW113135763 A TW 113135763A TW I907078 B TWI907078 B TW I907078B
Authority
TW
Taiwan
Prior art keywords
wafer
gas inlet
sample stage
processing chamber
center
Prior art date
Application number
TW113135763A
Other languages
English (en)
Chinese (zh)
Other versions
TW202514862A (zh
Inventor
山田将貴
岩井貴弘
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202514862A publication Critical patent/TW202514862A/zh
Application granted granted Critical
Publication of TWI907078B publication Critical patent/TWI907078B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW113135763A 2023-09-27 2024-09-20 晶圓處理裝置 TWI907078B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/035295 WO2025069286A1 (ja) 2023-09-27 2023-09-27 ウエハ処理装置
WOPCT/JP2023/035295 2023-09-27

Publications (2)

Publication Number Publication Date
TW202514862A TW202514862A (zh) 2025-04-01
TWI907078B true TWI907078B (zh) 2025-12-01

Family

ID=95202375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113135763A TWI907078B (zh) 2023-09-27 2024-09-20 晶圓處理裝置

Country Status (5)

Country Link
JP (1) JPWO2025069286A1 (https=)
KR (1) KR20250048007A (https=)
CN (1) CN120051852A (https=)
TW (1) TWI907078B (https=)
WO (1) WO2025069286A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
TW202127538A (zh) * 2019-12-20 2021-07-16 日商日立全球先端科技股份有限公司 電漿處理裝置及晶圓處理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647519A (en) * 1987-06-30 1989-01-11 Oki Electric Ind Co Ltd Annealing device
JPH0992624A (ja) * 1995-09-25 1997-04-04 Semitsukusu Eng Kk 熱処理炉
JP3972379B2 (ja) * 1995-12-14 2007-09-05 信越半導体株式会社 加熱炉
JPH10321546A (ja) * 1997-05-22 1998-12-04 Kokusai Electric Co Ltd 熱処理炉
JP4672342B2 (ja) * 2004-11-22 2011-04-20 株式会社国際電気セミコンダクターサービス 基板処理装置及び半導体装置の製造方法
JP5465828B2 (ja) * 2007-10-01 2014-04-09 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP5169299B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP2011176128A (ja) * 2010-02-24 2011-09-08 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
JP2015185594A (ja) 2014-03-20 2015-10-22 株式会社日立ハイテクノロジーズ エッチング装置
JP2020097060A (ja) 2017-03-31 2020-06-25 日本電産株式会社 ロボット教示装置、ロボット教示装置の制御方法及びロボット教示プログラム
JP7040899B2 (ja) * 2017-04-05 2022-03-23 ウシオ電機株式会社 加熱光源装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
TW202127538A (zh) * 2019-12-20 2021-07-16 日商日立全球先端科技股份有限公司 電漿處理裝置及晶圓處理方法

Also Published As

Publication number Publication date
WO2025069286A1 (ja) 2025-04-03
TW202514862A (zh) 2025-04-01
CN120051852A (zh) 2025-05-27
JPWO2025069286A1 (https=) 2025-04-03
KR20250048007A (ko) 2025-04-07

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