JPWO2025069286A1 - - Google Patents
Info
- Publication number
- JPWO2025069286A1 JPWO2025069286A1 JP2025508420A JP2025508420A JPWO2025069286A1 JP WO2025069286 A1 JPWO2025069286 A1 JP WO2025069286A1 JP 2025508420 A JP2025508420 A JP 2025508420A JP 2025508420 A JP2025508420 A JP 2025508420A JP WO2025069286 A1 JPWO2025069286 A1 JP WO2025069286A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/035295 WO2025069286A1 (ja) | 2023-09-27 | 2023-09-27 | ウエハ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025069286A1 true JPWO2025069286A1 (https=) | 2025-04-03 |
Family
ID=95202375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025508420A Pending JPWO2025069286A1 (https=) | 2023-09-27 | 2023-09-27 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2025069286A1 (https=) |
| KR (1) | KR20250048007A (https=) |
| CN (1) | CN120051852A (https=) |
| TW (1) | TWI907078B (https=) |
| WO (1) | WO2025069286A1 (https=) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647519A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | Annealing device |
| JPH0992624A (ja) * | 1995-09-25 | 1997-04-04 | Semitsukusu Eng Kk | 熱処理炉 |
| JPH09167742A (ja) * | 1995-12-14 | 1997-06-24 | Shin Etsu Handotai Co Ltd | 加熱炉 |
| JPH10321546A (ja) * | 1997-05-22 | 1998-12-04 | Kokusai Electric Co Ltd | 熱処理炉 |
| JP2006147943A (ja) * | 2004-11-22 | 2006-06-08 | Kokusai Electric Semiconductor Service Inc | 基板処理装置及び半導体装置の製造方法 |
| JP2009088348A (ja) * | 2007-10-01 | 2009-04-23 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| JP2009200330A (ja) * | 2008-02-22 | 2009-09-03 | Denso Corp | 半導体製造装置 |
| JP2011176128A (ja) * | 2010-02-24 | 2011-09-08 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
| JP2018181925A (ja) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | 加熱光源装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080965A (en) * | 1997-09-18 | 2000-06-27 | Tokyo Electron Limited | Single-substrate-heat-treatment apparatus in semiconductor processing system |
| JP2015185594A (ja) | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | エッチング装置 |
| JP2020097060A (ja) | 2017-03-31 | 2020-06-25 | 日本電産株式会社 | ロボット教示装置、ロボット教示装置の制御方法及びロボット教示プログラム |
| US12051574B2 (en) * | 2019-12-20 | 2024-07-30 | Hitachi High-Tech Corporation | Wafer processing method and plasma processing apparatus |
-
2023
- 2023-09-27 WO PCT/JP2023/035295 patent/WO2025069286A1/ja active Pending
- 2023-09-27 JP JP2025508420A patent/JPWO2025069286A1/ja active Pending
- 2023-09-27 KR KR1020257005042A patent/KR20250048007A/ko active Pending
- 2023-09-27 CN CN202380064370.9A patent/CN120051852A/zh active Pending
-
2024
- 2024-09-20 TW TW113135763A patent/TWI907078B/zh active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS647519A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | Annealing device |
| JPH0992624A (ja) * | 1995-09-25 | 1997-04-04 | Semitsukusu Eng Kk | 熱処理炉 |
| JPH09167742A (ja) * | 1995-12-14 | 1997-06-24 | Shin Etsu Handotai Co Ltd | 加熱炉 |
| JPH10321546A (ja) * | 1997-05-22 | 1998-12-04 | Kokusai Electric Co Ltd | 熱処理炉 |
| JP2006147943A (ja) * | 2004-11-22 | 2006-06-08 | Kokusai Electric Semiconductor Service Inc | 基板処理装置及び半導体装置の製造方法 |
| JP2009088348A (ja) * | 2007-10-01 | 2009-04-23 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| JP2009200330A (ja) * | 2008-02-22 | 2009-09-03 | Denso Corp | 半導体製造装置 |
| JP2011176128A (ja) * | 2010-02-24 | 2011-09-08 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
| JP2018181925A (ja) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | 加熱光源装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI907078B (zh) | 2025-12-01 |
| WO2025069286A1 (ja) | 2025-04-03 |
| TW202514862A (zh) | 2025-04-01 |
| CN120051852A (zh) | 2025-05-27 |
| KR20250048007A (ko) | 2025-04-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260224 |
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