KR20250048007A - 웨이퍼 처리 장치 - Google Patents

웨이퍼 처리 장치 Download PDF

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Publication number
KR20250048007A
KR20250048007A KR1020257005042A KR20257005042A KR20250048007A KR 20250048007 A KR20250048007 A KR 20250048007A KR 1020257005042 A KR1020257005042 A KR 1020257005042A KR 20257005042 A KR20257005042 A KR 20257005042A KR 20250048007 A KR20250048007 A KR 20250048007A
Authority
KR
South Korea
Prior art keywords
wafer
gas introduction
angle
center
reflectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257005042A
Other languages
English (en)
Korean (ko)
Inventor
마사키 야마다
다카히로 이와이
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20250048007A publication Critical patent/KR20250048007A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H01L21/67069—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • H01L21/3065—
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020257005042A 2023-09-27 2023-09-27 웨이퍼 처리 장치 Pending KR20250048007A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/035295 WO2025069286A1 (ja) 2023-09-27 2023-09-27 ウエハ処理装置

Publications (1)

Publication Number Publication Date
KR20250048007A true KR20250048007A (ko) 2025-04-07

Family

ID=95202375

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257005042A Pending KR20250048007A (ko) 2023-09-27 2023-09-27 웨이퍼 처리 장치

Country Status (5)

Country Link
JP (1) JPWO2025069286A1 (https=)
KR (1) KR20250048007A (https=)
CN (1) CN120051852A (https=)
TW (1) TWI907078B (https=)
WO (1) WO2025069286A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185594A (ja) 2014-03-20 2015-10-22 株式会社日立ハイテクノロジーズ エッチング装置
JP2020097060A (ja) 2017-03-31 2020-06-25 日本電産株式会社 ロボット教示装置、ロボット教示装置の制御方法及びロボット教示プログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647519A (en) * 1987-06-30 1989-01-11 Oki Electric Ind Co Ltd Annealing device
JPH0992624A (ja) * 1995-09-25 1997-04-04 Semitsukusu Eng Kk 熱処理炉
JP3972379B2 (ja) * 1995-12-14 2007-09-05 信越半導体株式会社 加熱炉
JPH10321546A (ja) * 1997-05-22 1998-12-04 Kokusai Electric Co Ltd 熱処理炉
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
JP4672342B2 (ja) * 2004-11-22 2011-04-20 株式会社国際電気セミコンダクターサービス 基板処理装置及び半導体装置の製造方法
JP5465828B2 (ja) * 2007-10-01 2014-04-09 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP5169299B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP2011176128A (ja) * 2010-02-24 2011-09-08 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
JP7040899B2 (ja) * 2017-04-05 2022-03-23 ウシオ電機株式会社 加熱光源装置
US12051574B2 (en) * 2019-12-20 2024-07-30 Hitachi High-Tech Corporation Wafer processing method and plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185594A (ja) 2014-03-20 2015-10-22 株式会社日立ハイテクノロジーズ エッチング装置
JP2020097060A (ja) 2017-03-31 2020-06-25 日本電産株式会社 ロボット教示装置、ロボット教示装置の制御方法及びロボット教示プログラム

Also Published As

Publication number Publication date
TWI907078B (zh) 2025-12-01
WO2025069286A1 (ja) 2025-04-03
TW202514862A (zh) 2025-04-01
CN120051852A (zh) 2025-05-27
JPWO2025069286A1 (https=) 2025-04-03

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