JP6242861B2 - 円錐形の石英ドームを通って伝送される光を制御する光学系 - Google Patents
円錐形の石英ドームを通って伝送される光を制御する光学系 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 15
- 239000010453 quartz Substances 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 29
- 239000012780 transparent material Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 45
- 238000010926 purge Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000005286 illumination Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000000265 homogenisation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/002—Arrays of reflective systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (12)
- 光学的に透明なドームを含むチャンバ本体と、
前記チャンバ本体内に配置された基板支持体と、
前記光学的に透明なドームに隣接して配置された複数のランプと、
前記チャンバ本体内で前記複数のランプと前記基板支持体上に位置決めされた基板との間に位置決めされた光集束アセンブリであって、前記複数のランプから放出される放射エネルギーに影響を与えるように適合された光集束アセンブリと、を備え、
前記光集束アセンブリが、複数の同心リング、またはリングに対する多角形の近似を備え、前記複数の同心リング、またはリングに対する多角形の近似は、光学的に透明な材料から形成されており、
前記複数の同心リング、またはリングに対する多角形の近似は、内部に中空の空洞を含み、前記中空の空洞の内面は、当該内面上に反射性の被覆を有している、プロセスチャンバ。 - 前記同心リングの少なくともいくつかが、異なる高さを有する、請求項1に記載のプロセスチャンバ。
- 前記同心リングがそれぞれ、2.5ミリメートル〜35ミリメートルの範囲内の厚さを有する、請求項1に記載のプロセスチャンバ。
- 光学的に透明なドームを含むチャンバ本体と、
前記チャンバ本体内に配置された基板支持体と、
前記光学的に透明なドームに隣接して配置された複数のランプと、
前記チャンバ本体内で前記複数のランプと前記基板支持体上に位置決めされた基板との間に位置決めされた光集束アセンブリであって、前記複数のランプから放出される放射エネルギーに影響を与えるように適合された光集束アセンブリと、を備え、
前記光集束アセンブリが、複数の同心リング、またはリングに対する多角形の近似を含み、
前記基板支持体に結合された支持シャフトが、前記複数の同心リングの最も内側のリングの中心を通って配置され、前記支持シャフトが、石英から形成され、中空の空洞を収容する、プロセスチャンバ。 - 前記光集束アセンブリが、隣接する同心リング間に配置された複数の屈折要素をさらに備える、請求項1に記載のプロセスチャンバ。
- 前記屈折要素が凸レンズまたは凹レンズを含む、請求項5に記載のプロセスチャンバ。
- 前記屈折要素が、フレネルレンズを含み、前記ランプが、前記チャンバ本体の処理領域の外側に位置決めされる、請求項5に記載のプロセスチャンバ。
- 光学的に透明なドームを含むチャンバ本体と、
前記チャンバ本体内に配置された基板支持体であって、前記基板支持体から支持シャフトが延びる、基板支持体と、
前記光学的に透明なドームに隣接して配置された複数のランプと、
前記チャンバ本体内で前記光学的に透明なドームと前記基板支持体との間に位置決めされた光集束アセンブリであって、前記光学的に透明なドームの上面と接触しており、前記複数のランプから放出される放射エネルギーに影響を与えるように適合された光集束アセンブリと、を備え、
前記光集束アセンブリが、複数の同心リング、またはリングに対する多角形の近似を備え、前記複数の同心リング、またはリングに対する多角形の近似は、光学的に透明な材料から形成されており、
前記複数の同心リング、またはリングに対する多角形の近似は、内部に中空の空洞を含み、前記中空の空洞の内壁は、当該内壁上に反射性の被覆を有している、プロセスチャンバ。 - 前記支持シャフトが中空の空洞を含む、請求項8に記載のプロセスチャンバ。
- 前記同心リングが石英を含む、請求項9に記載のプロセスチャンバ。
- 前記光集束アセンブリが、隣接する同心リング間に配置された複数の屈折要素をさらに備え、前記屈折要素が、凹レンズ、凸レンズ、またはフレネルレンズを含む、請求項9に記載のプロセスチャンバ。
- 光学的に透明な材料から形成された複数の同心リングであって、各同心リングが内部に中空の空洞を有する、複数の同心リングと、
前記中空の空洞内に配置された反射性材料と、を備える光学アセンブリ。
Applications Claiming Priority (5)
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US201261637998P | 2012-04-25 | 2012-04-25 | |
US61/637,998 | 2012-04-25 | ||
US201261662166P | 2012-06-20 | 2012-06-20 | |
US61/662,166 | 2012-06-20 | ||
PCT/US2013/029344 WO2013162712A1 (en) | 2012-04-25 | 2013-03-06 | Optics for controlling light transmitted through a conical quartz dome |
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JP2015516688A JP2015516688A (ja) | 2015-06-11 |
JP6242861B2 true JP6242861B2 (ja) | 2017-12-06 |
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JP2015508956A Active JP6242861B2 (ja) | 2012-04-25 | 2013-03-06 | 円錐形の石英ドームを通って伝送される光を制御する光学系 |
Country Status (6)
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US (2) | US9905444B2 (ja) |
JP (1) | JP6242861B2 (ja) |
KR (1) | KR102108224B1 (ja) |
CN (2) | CN104246981B (ja) |
TW (1) | TWI623992B (ja) |
WO (1) | WO2013162712A1 (ja) |
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-
2013
- 2013-03-05 US US13/785,539 patent/US9905444B2/en not_active Expired - Fee Related
- 2013-03-06 CN CN201380018920.XA patent/CN104246981B/zh active Active
- 2013-03-06 KR KR1020147030507A patent/KR102108224B1/ko active IP Right Grant
- 2013-03-06 JP JP2015508956A patent/JP6242861B2/ja active Active
- 2013-03-06 CN CN201810031844.0A patent/CN108051906A/zh active Pending
- 2013-03-06 WO PCT/US2013/029344 patent/WO2013162712A1/en active Application Filing
- 2013-03-26 TW TW102110686A patent/TWI623992B/zh active
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2018
- 2018-01-10 US US15/867,214 patent/US20180130653A1/en not_active Abandoned
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Publication number | Publication date |
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TW201344829A (zh) | 2013-11-01 |
CN104246981B (zh) | 2018-02-13 |
WO2013162712A1 (en) | 2013-10-31 |
US20130284095A1 (en) | 2013-10-31 |
KR102108224B1 (ko) | 2020-05-08 |
CN108051906A (zh) | 2018-05-18 |
KR20150004360A (ko) | 2015-01-12 |
CN104246981A (zh) | 2014-12-24 |
TWI623992B (zh) | 2018-05-11 |
US20180130653A1 (en) | 2018-05-10 |
US9905444B2 (en) | 2018-02-27 |
JP2015516688A (ja) | 2015-06-11 |
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