TWI902716B - 攝像裝置 - Google Patents

攝像裝置

Info

Publication number
TWI902716B
TWI902716B TW109137712A TW109137712A TWI902716B TW I902716 B TWI902716 B TW I902716B TW 109137712 A TW109137712 A TW 109137712A TW 109137712 A TW109137712 A TW 109137712A TW I902716 B TWI902716 B TW I902716B
Authority
TW
Taiwan
Prior art keywords
aforementioned
transistor
peripheral
specific
layer
Prior art date
Application number
TW109137712A
Other languages
English (en)
Chinese (zh)
Other versions
TW202143460A (zh
Inventor
野田泰史
Original Assignee
日商松下知識產權經營股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商松下知識產權經營股份有限公司 filed Critical 日商松下知識產權經營股份有限公司
Publication of TW202143460A publication Critical patent/TW202143460A/zh
Application granted granted Critical
Publication of TWI902716B publication Critical patent/TWI902716B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8314—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having gate insulating layers with different properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW109137712A 2020-01-30 2020-10-29 攝像裝置 TWI902716B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-013415 2020-01-30
JP2020013415 2020-01-30
JP2020-160031 2020-09-24
JP2020160031 2020-09-24

Publications (2)

Publication Number Publication Date
TW202143460A TW202143460A (zh) 2021-11-16
TWI902716B true TWI902716B (zh) 2025-11-01

Family

ID=77078153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109137712A TWI902716B (zh) 2020-01-30 2020-10-29 攝像裝置

Country Status (4)

Country Link
US (1) US12336316B2 (https=)
JP (1) JP7689307B2 (https=)
TW (1) TWI902716B (https=)
WO (1) WO2021152943A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202329441A (zh) 2022-01-11 2023-07-16 日商松下知識產權經營股份有限公司 攝像裝置
CN117038689B (zh) * 2023-08-18 2024-10-15 武汉新芯集成电路股份有限公司 具有垂直沟道区的cmos图像传感器及形成方法
US20250120209A1 (en) * 2023-10-04 2025-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021204A (en) * 2008-08-01 2010-06-01 Sony Corp Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
JP2013020998A (ja) * 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置およびその製造方法
US20150364522A1 (en) * 2014-06-12 2015-12-17 Canon Kabushiki Kaisha Method of manufacturing solid-state image sensor

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WO2004068588A1 (ja) * 2003-01-31 2004-08-12 Fujitsu Limited 半導体装置及びその製造方法
JP4841143B2 (ja) * 2004-09-27 2011-12-21 パナソニック株式会社 半導体装置の製造方法
JP5135743B2 (ja) * 2005-09-28 2013-02-06 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5347283B2 (ja) * 2008-03-05 2013-11-20 ソニー株式会社 固体撮像装置およびその製造方法
JP5235486B2 (ja) 2008-05-07 2013-07-10 パナソニック株式会社 半導体装置
JP5453832B2 (ja) * 2009-02-20 2014-03-26 ソニー株式会社 固体撮像装置および撮像装置
JP5428395B2 (ja) * 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置およびその製造方法、および撮像装置
JP5564909B2 (ja) * 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2012238760A (ja) * 2011-05-12 2012-12-06 Tohoku Univ 半導体装置およびその製造方法
JP5537523B2 (ja) * 2011-09-22 2014-07-02 株式会社東芝 固体撮像装置
JP6083930B2 (ja) * 2012-01-18 2017-02-22 キヤノン株式会社 光電変換装置および撮像システム、光電変換装置の製造方法
WO2014002362A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JP6179865B2 (ja) * 2012-06-26 2017-08-16 パナソニックＩｐマネジメント株式会社 固体撮像装置及びその製造方法
WO2014002390A1 (ja) * 2012-06-28 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JP6242211B2 (ja) 2013-12-26 2017-12-06 キヤノン株式会社 撮像装置および撮像システム
CN109429559B (zh) 2017-07-05 2022-06-03 松下知识产权经营株式会社 摄像装置
JP2019024075A (ja) 2017-07-24 2019-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021204A (en) * 2008-08-01 2010-06-01 Sony Corp Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
JP2013020998A (ja) * 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置およびその製造方法
US20150364522A1 (en) * 2014-06-12 2015-12-17 Canon Kabushiki Kaisha Method of manufacturing solid-state image sensor

Also Published As

Publication number Publication date
JPWO2021152943A1 (https=) 2021-08-05
WO2021152943A1 (ja) 2021-08-05
JP7689307B2 (ja) 2025-06-06
US20220344394A1 (en) 2022-10-27
TW202143460A (zh) 2021-11-16
US12336316B2 (en) 2025-06-17

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