TWI900532B - 面發光雷射元件及面發光雷射元件的製造方法 - Google Patents

面發光雷射元件及面發光雷射元件的製造方法

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Publication number
TWI900532B
TWI900532B TW110106415A TW110106415A TWI900532B TW I900532 B TWI900532 B TW I900532B TW 110106415 A TW110106415 A TW 110106415A TW 110106415 A TW110106415 A TW 110106415A TW I900532 B TWI900532 B TW I900532B
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TW
Taiwan
Prior art keywords
layer
hole
main
holes
photonic crystal
Prior art date
Application number
TW110106415A
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English (en)
Chinese (zh)
Other versions
TW202139550A (zh
Inventor
野田進
井上卓也
小泉朋朗
江本渓
Original Assignee
國立大學法人京都大學
日商斯坦雷電氣股份有限公司
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Publication of TW202139550A publication Critical patent/TW202139550A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3258—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW110106415A 2020-03-16 2021-02-24 面發光雷射元件及面發光雷射元件的製造方法 TWI900532B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020045573 2020-03-16
JP2020-045573 2020-03-16

Publications (2)

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TW202139550A TW202139550A (zh) 2021-10-16
TWI900532B true TWI900532B (zh) 2025-10-11

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TW114103528A TWI909953B (zh) 2020-03-16 2021-02-24 面發光雷射元件及面發光雷射元件的製造方法

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Country Status (6)

Country Link
US (2) US12525767B2 (https=)
EP (1) EP4105967B1 (https=)
JP (2) JP7615424B2 (https=)
CN (1) CN115298916B (https=)
TW (2) TWI900532B (https=)
WO (1) WO2021186965A1 (https=)

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JP2023054990A (ja) * 2021-10-05 2023-04-17 国立大学法人京都大学 面発光レーザ素子
DE102022101787A1 (de) * 2022-01-26 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenbauelement und verfahren zur herstellung zumindest einer photonischen kristallstruktur für ein laserdiodenbauelement
DE102022103128A1 (de) * 2022-02-10 2023-08-10 Ams-Osram International Gmbh Optoelektronisches halbleiterlaserbauelement und optoelektronische anordnung
DE102022105668A1 (de) * 2022-03-10 2023-09-14 Ams-Osram International Gmbh Laseranordnung, optoelektronisches system und verfahren zur herstellung einer laseranordnung
JP7738854B2 (ja) * 2022-03-28 2025-09-16 国立大学法人京都大学 面発光レーザ素子
TWI853563B (zh) * 2022-05-25 2024-08-21 國立大學法人京都大學 面發光雷射元件的製造方法
JP2023182186A (ja) * 2022-06-14 2023-12-26 国立大学法人京都大学 面発光レーザ素子
DE102022127877A1 (de) * 2022-10-21 2024-05-02 Ams-Osram International Gmbh Oszillatorschaltung und verfahren
GB2625726B (en) * 2022-12-21 2025-09-24 Vector Photonics Ltd Surface Emitting Laser Devices and Methods for Manufacturing Same
JP2024142951A (ja) * 2023-03-30 2024-10-11 国立大学法人京都大学 面発光半導体レーザ素子の製造方法及び面発光半導体レーザ素子
JP2024142980A (ja) * 2023-03-30 2024-10-11 国立大学法人京都大学 フォトニック結晶面発光レーザ素子
WO2025100057A1 (ja) * 2023-11-10 2025-05-15 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
CN118352884B (zh) * 2024-06-14 2025-01-21 安徽格恩半导体有限公司 一种氮化镓基半导体激光器及制备方法

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TW200633331A (en) * 2004-12-08 2006-09-16 Sumitomo Electric Industries Semiconductor laser device and fabricating method thereof
TW200735496A (en) * 2005-09-05 2007-09-16 Univ Kyoto Two-dimensional photonic crystal surface light emitting laser light source
TW200908490A (en) * 2007-03-23 2009-02-16 Sumitomo Electric Industries Photonic crystal laser and method for manufacturing photonic crystal laser
US20130163630A1 (en) * 2010-09-16 2013-06-27 Yasuhiro Nagatomo Two-dimensional photonic crystal surface emitting laser
US20160248224A1 (en) * 2013-03-08 2016-08-25 Japan Science And Technology Agency Two-dimensional photonic crystal surface-emitting laser
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EP4105967B1 (en) 2026-04-29
JP7615424B2 (ja) 2025-01-17
CN115298916B (zh) 2025-07-11
JP7752368B2 (ja) 2025-10-10
TW202139550A (zh) 2021-10-16
JP2025004130A (ja) 2025-01-14
EP4105967A4 (en) 2023-08-23
US12525767B2 (en) 2026-01-13
US20260100556A1 (en) 2026-04-09
US20230127863A1 (en) 2023-04-27
TW202520598A (zh) 2025-05-16
TWI909953B (zh) 2025-12-21
CN115298916A (zh) 2022-11-04
JPWO2021186965A1 (https=) 2021-09-23
EP4105967A1 (en) 2022-12-21
WO2021186965A1 (ja) 2021-09-23

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