JPWO2021186965A1 - - Google Patents
Info
- Publication number
- JPWO2021186965A1 JPWO2021186965A1 JP2022508138A JP2022508138A JPWO2021186965A1 JP WO2021186965 A1 JPWO2021186965 A1 JP WO2021186965A1 JP 2022508138 A JP2022508138 A JP 2022508138A JP 2022508138 A JP2022508138 A JP 2022508138A JP WO2021186965 A1 JPWO2021186965 A1 JP WO2021186965A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18316—Airgap confined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3251—Layer structure consisting of three or more layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3258—Crystal orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024174933A JP7752368B2 (ja) | 2020-03-16 | 2024-10-04 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020045573 | 2020-03-16 | ||
| JP2020045573 | 2020-03-16 | ||
| PCT/JP2021/005100 WO2021186965A1 (ja) | 2020-03-16 | 2021-02-10 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024174933A Division JP7752368B2 (ja) | 2020-03-16 | 2024-10-04 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021186965A1 true JPWO2021186965A1 (https=) | 2021-09-23 |
| JPWO2021186965A5 JPWO2021186965A5 (https=) | 2022-11-18 |
| JP7615424B2 JP7615424B2 (ja) | 2025-01-17 |
Family
ID=77770845
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022508138A Active JP7615424B2 (ja) | 2020-03-16 | 2021-02-10 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
| JP2024174933A Active JP7752368B2 (ja) | 2020-03-16 | 2024-10-04 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024174933A Active JP7752368B2 (ja) | 2020-03-16 | 2024-10-04 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12525767B2 (https=) |
| EP (1) | EP4105967B1 (https=) |
| JP (2) | JP7615424B2 (https=) |
| CN (1) | CN115298916B (https=) |
| TW (2) | TWI900532B (https=) |
| WO (1) | WO2021186965A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023054990A (ja) * | 2021-10-05 | 2023-04-17 | 国立大学法人京都大学 | 面発光レーザ素子 |
| DE102022101787A1 (de) * | 2022-01-26 | 2023-07-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserdiodenbauelement und verfahren zur herstellung zumindest einer photonischen kristallstruktur für ein laserdiodenbauelement |
| DE102022103128A1 (de) * | 2022-02-10 | 2023-08-10 | Ams-Osram International Gmbh | Optoelektronisches halbleiterlaserbauelement und optoelektronische anordnung |
| DE102022105668A1 (de) * | 2022-03-10 | 2023-09-14 | Ams-Osram International Gmbh | Laseranordnung, optoelektronisches system und verfahren zur herstellung einer laseranordnung |
| JP7738854B2 (ja) * | 2022-03-28 | 2025-09-16 | 国立大学法人京都大学 | 面発光レーザ素子 |
| TWI853563B (zh) * | 2022-05-25 | 2024-08-21 | 國立大學法人京都大學 | 面發光雷射元件的製造方法 |
| JP2023182186A (ja) * | 2022-06-14 | 2023-12-26 | 国立大学法人京都大学 | 面発光レーザ素子 |
| DE102022127877A1 (de) * | 2022-10-21 | 2024-05-02 | Ams-Osram International Gmbh | Oszillatorschaltung und verfahren |
| GB2625726B (en) * | 2022-12-21 | 2025-09-24 | Vector Photonics Ltd | Surface Emitting Laser Devices and Methods for Manufacturing Same |
| JP2024142951A (ja) * | 2023-03-30 | 2024-10-11 | 国立大学法人京都大学 | 面発光半導体レーザ素子の製造方法及び面発光半導体レーザ素子 |
| JP2024142980A (ja) * | 2023-03-30 | 2024-10-11 | 国立大学法人京都大学 | フォトニック結晶面発光レーザ素子 |
| WO2025100057A1 (ja) * | 2023-11-10 | 2025-05-15 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ |
| CN118352884B (zh) * | 2024-06-14 | 2025-01-21 | 安徽格恩半导体有限公司 | 一种氮化镓基半导体激光器及制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067182A (ja) * | 2005-08-31 | 2007-03-15 | Sumitomo Electric Ind Ltd | フォトニック結晶構造を備える素子の製造方法およびフォトニック結晶構造を備える素子 |
| JP2008243962A (ja) * | 2007-03-26 | 2008-10-09 | Kyoto Univ | ２次元フォトニック結晶面発光レーザ |
| JP2012227425A (ja) * | 2011-04-21 | 2012-11-15 | Canon Inc | 分布帰還型面発光レーザ |
| WO2017150387A1 (ja) * | 2016-02-29 | 2017-09-08 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ及びその製造方法 |
| WO2018155710A1 (ja) * | 2017-02-27 | 2018-08-30 | 国立大学法人京都大学 | 面発光レーザ及び面発光レーザの製造方法 |
| JP2019114663A (ja) * | 2017-12-22 | 2019-07-11 | 国立大学法人京都大学 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5082447B2 (ja) * | 2004-12-08 | 2012-11-28 | 住友電気工業株式会社 | 半導体レーザ素子およびその製造方法 |
| WO2007029661A1 (ja) * | 2005-09-05 | 2007-03-15 | Kyoto University | ２次元フォトニック結晶面発光レーザ光源 |
| JP4310297B2 (ja) * | 2005-09-05 | 2009-08-05 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ光源 |
| JP4294023B2 (ja) * | 2005-12-27 | 2009-07-08 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ光源 |
| JP5138898B2 (ja) * | 2006-03-31 | 2013-02-06 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ光源 |
| WO2008117562A1 (ja) * | 2007-03-23 | 2008-10-02 | Sumitomo Electric Industries, Ltd. | フォトニック結晶レーザおよびフォトニック結晶レーザの製造方法 |
| JP4647020B2 (ja) * | 2009-07-30 | 2011-03-09 | キヤノン株式会社 | 窒化物半導体の微細構造の製造方法 |
| JP2011119349A (ja) | 2009-12-01 | 2011-06-16 | Sumitomo Electric Ind Ltd | 半導体レーザ素子及びその製造方法 |
| JP5627361B2 (ja) * | 2010-09-16 | 2014-11-19 | キヤノン株式会社 | ２次元フォトニック結晶面発光レーザ |
| JP2013161965A (ja) * | 2012-02-06 | 2013-08-19 | Kyoto Univ | 半導体発光素子 |
| US9627850B2 (en) * | 2013-03-08 | 2017-04-18 | Japan Science And Technology Agency | Two-dimensional photonic crystal surface-emitting laser |
| WO2016031965A1 (ja) * | 2014-08-29 | 2016-03-03 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ |
| US9991669B2 (en) * | 2016-07-25 | 2018-06-05 | Hamamatsu Photonics K.K. | Semiconductor light-emitting device and manufacturing method for the same |
| DE112019002892T5 (de) | 2018-06-08 | 2021-02-25 | Hamamatsu Photonics K.K. | Lichtemittierendes Element |
| JP7279875B2 (ja) | 2018-09-03 | 2023-05-23 | 国立大学法人京都大学 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
| JP7504368B2 (ja) | 2019-12-16 | 2024-06-24 | 国立大学法人京都大学 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
| JP7504369B2 (ja) | 2019-12-16 | 2024-06-24 | 国立大学法人京都大学 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
-
2021
- 2021-02-10 JP JP2022508138A patent/JP7615424B2/ja active Active
- 2021-02-10 WO PCT/JP2021/005100 patent/WO2021186965A1/ja not_active Ceased
- 2021-02-10 EP EP21772301.4A patent/EP4105967B1/en active Active
- 2021-02-10 CN CN202180021422.5A patent/CN115298916B/zh active Active
- 2021-02-10 US US17/911,643 patent/US12525767B2/en active Active
- 2021-02-24 TW TW110106415A patent/TWI900532B/zh active
- 2021-02-24 TW TW114103528A patent/TWI909953B/zh active
-
2024
- 2024-10-04 JP JP2024174933A patent/JP7752368B2/ja active Active
-
2025
- 2025-12-10 US US19/415,234 patent/US20260100556A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067182A (ja) * | 2005-08-31 | 2007-03-15 | Sumitomo Electric Ind Ltd | フォトニック結晶構造を備える素子の製造方法およびフォトニック結晶構造を備える素子 |
| JP2008243962A (ja) * | 2007-03-26 | 2008-10-09 | Kyoto Univ | ２次元フォトニック結晶面発光レーザ |
| JP2012227425A (ja) * | 2011-04-21 | 2012-11-15 | Canon Inc | 分布帰還型面発光レーザ |
| WO2017150387A1 (ja) * | 2016-02-29 | 2017-09-08 | 国立大学法人京都大学 | ２次元フォトニック結晶面発光レーザ及びその製造方法 |
| WO2018155710A1 (ja) * | 2017-02-27 | 2018-08-30 | 国立大学法人京都大学 | 面発光レーザ及び面発光レーザの製造方法 |
| JP2019114663A (ja) * | 2017-12-22 | 2019-07-11 | 国立大学法人京都大学 | 面発光レーザ素子及び面発光レーザ素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4105967B1 (en) | 2026-04-29 |
| JP7615424B2 (ja) | 2025-01-17 |
| CN115298916B (zh) | 2025-07-11 |
| JP7752368B2 (ja) | 2025-10-10 |
| TW202139550A (zh) | 2021-10-16 |
| TWI900532B (zh) | 2025-10-11 |
| JP2025004130A (ja) | 2025-01-14 |
| EP4105967A4 (en) | 2023-08-23 |
| US12525767B2 (en) | 2026-01-13 |
| US20260100556A1 (en) | 2026-04-09 |
| US20230127863A1 (en) | 2023-04-27 |
| TW202520598A (zh) | 2025-05-16 |
| TWI909953B (zh) | 2025-12-21 |
| CN115298916A (zh) | 2022-11-04 |
| EP4105967A1 (en) | 2022-12-21 |
| WO2021186965A1 (ja) | 2021-09-23 |
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