TWI891711B - 邊緣環對準系統及方法 - Google Patents

邊緣環對準系統及方法

Info

Publication number
TWI891711B
TWI891711B TW110102253A TW110102253A TWI891711B TW I891711 B TWI891711 B TW I891711B TW 110102253 A TW110102253 A TW 110102253A TW 110102253 A TW110102253 A TW 110102253A TW I891711 B TWI891711 B TW I891711B
Authority
TW
Taiwan
Prior art keywords
edge ring
carrier plate
substrate
alignment system
feature
Prior art date
Application number
TW110102253A
Other languages
English (en)
Chinese (zh)
Other versions
TW202147376A (zh
Inventor
達蒙 蒂龍 杰納堤
達里爾 安吉洛
理查 Ｈ 古德
羅納德 史考特 鮑威爾
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202147376A publication Critical patent/TW202147376A/zh
Application granted granted Critical
Publication of TWI891711B publication Critical patent/TWI891711B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Robotics (AREA)
  • Manipulator (AREA)
  • Drying Of Semiconductors (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Attitude Control For Articles On Conveyors (AREA)
  • Feeding Of Articles To Conveyors (AREA)
TW110102253A 2020-01-23 2021-01-21 邊緣環對準系統及方法 TWI891711B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062964908P 2020-01-23 2020-01-23
US62/964,908 2020-01-23

Publications (2)

Publication Number Publication Date
TW202147376A TW202147376A (zh) 2021-12-16
TWI891711B true TWI891711B (zh) 2025-08-01

Family

ID=76991736

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110102253A TWI891711B (zh) 2020-01-23 2021-01-21 邊緣環對準系統及方法

Country Status (6)

Country Link
US (2) US12575365B2 (cg-RX-API-DMAC10.html)
JP (1) JP7719781B2 (cg-RX-API-DMAC10.html)
KR (2) KR102888626B1 (cg-RX-API-DMAC10.html)
CN (1) CN115004352A (cg-RX-API-DMAC10.html)
TW (1) TWI891711B (cg-RX-API-DMAC10.html)
WO (1) WO2021150548A1 (cg-RX-API-DMAC10.html)

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JP2022139927A (ja) * 2021-03-12 2022-09-26 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP7720235B2 (ja) * 2021-11-26 2025-08-07 株式会社安川電機 アライメント装置、基板搬送システム、アライメント方法、及びプログラム
JP2025038375A (ja) 2023-09-07 2025-03-19 株式会社安川電機 ロボット、システム、制御方法、及びプログラム
CN122498277A (zh) * 2024-02-22 2026-07-31 东京毅力科创株式会社 基板处理装置
US12603261B2 (en) * 2024-04-04 2026-04-14 Applied Materials, Inc. Aligner station with lifting mechanism

Citations (7)

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TW201541545A (zh) * 2014-04-30 2015-11-01 斯克林集團公司 基板處理裝置及基板處理方法
TW201726509A (zh) * 2015-10-22 2017-08-01 蘭姆研究公司 前開式環狀傳送盒
US20180138069A1 (en) * 2016-11-14 2018-05-17 Lam Research Corporation Edge ring centering method using ring dynamic alignment data
TW201825704A (zh) * 2016-10-12 2018-07-16 美商蘭姆研究公司 半導體處理用晶圓定位底座
US20190088531A1 (en) * 2017-09-21 2019-03-21 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US20190109031A1 (en) * 2011-03-31 2019-04-11 Tokyo Electron Limited Substrate processing apparatus

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CN1330494C (zh) * 2002-09-30 2007-08-08 索尼株式会社 电子部件对准方法及其所使用的装置
JP2004289003A (ja) * 2003-03-24 2004-10-14 Seiko Epson Corp 石英リング、プラズマ処理装置および半導体装置の製造方法
KR101590655B1 (ko) 2007-12-27 2016-02-18 램 리써치 코포레이션 동적 정렬 빔 교정의 방법 및 시스템
JP5227197B2 (ja) * 2008-06-19 2013-07-03 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US8314371B2 (en) * 2008-11-06 2012-11-20 Applied Materials, Inc. Rapid thermal processing chamber with micro-positioning system
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CN102741995A (zh) * 2010-02-05 2012-10-17 东京毅力科创株式会社 基板保持用具、基板输送装置及基板处理装置
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KR102433436B1 (ko) 2018-07-04 2022-08-17 삼성전자주식회사 기판 처리 시스템, 기판 처리 시스템에서의 에지 링 정렬 검사 방법 및 이를 수행하기 위한 원반형 비젼 센서
KR102702089B1 (ko) * 2019-03-22 2024-09-03 삼성전자주식회사 에지 링을 갖는 기판 처리 장치
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KR102809937B1 (ko) 2019-06-06 2025-05-19 램 리써치 코포레이션 회전 정렬이 필요한 에지 링의 자동화된 이송
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JPWO2024071073A1 (cg-RX-API-DMAC10.html) * 2022-09-30 2024-04-04

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TW201029070A (en) * 2008-11-06 2010-08-01 Applied Materials Inc Rapid thermal processing chamber with micro-positioning system
US20190109031A1 (en) * 2011-03-31 2019-04-11 Tokyo Electron Limited Substrate processing apparatus
TW201541545A (zh) * 2014-04-30 2015-11-01 斯克林集團公司 基板處理裝置及基板處理方法
TW201726509A (zh) * 2015-10-22 2017-08-01 蘭姆研究公司 前開式環狀傳送盒
TW201825704A (zh) * 2016-10-12 2018-07-16 美商蘭姆研究公司 半導體處理用晶圓定位底座
US20180138069A1 (en) * 2016-11-14 2018-05-17 Lam Research Corporation Edge ring centering method using ring dynamic alignment data
US20190088531A1 (en) * 2017-09-21 2019-03-21 Applied Materials, Inc. In-situ apparatus for semiconductor process module

Also Published As

Publication number Publication date
US12575365B2 (en) 2026-03-10
JP2023514065A (ja) 2023-04-05
TW202147376A (zh) 2021-12-16
JP7719781B2 (ja) 2025-08-06
WO2021150548A1 (en) 2021-07-29
CN115004352A (zh) 2022-09-02
KR20220127926A (ko) 2022-09-20
KR20250165690A (ko) 2025-11-26
US20230047039A1 (en) 2023-02-16
KR102888626B1 (ko) 2025-11-19
US20260190933A1 (en) 2026-07-02

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