TWI880158B - 最佳化低能量/高生產率沉積系統 - Google Patents

最佳化低能量/高生產率沉積系統 Download PDF

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Publication number
TWI880158B
TWI880158B TW112101156A TW112101156A TWI880158B TW I880158 B TWI880158 B TW I880158B TW 112101156 A TW112101156 A TW 112101156A TW 112101156 A TW112101156 A TW 112101156A TW I880158 B TWI880158 B TW I880158B
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Taiwan
Prior art keywords
robot
process module
end effector
stations
processing
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TW112101156A
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English (en)
Chinese (zh)
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TW202344702A (zh
Inventor
麥可 諾爾丹
卡爾 里瑟
理查 布蘭克
羅伯特 史庫拉克
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美商蘭姆研究公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Automation & Control Theory (AREA)
  • Manipulator (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
TW112101156A 2017-01-23 2018-01-22 最佳化低能量/高生產率沉積系統 TWI880158B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762449325P 2017-01-23 2017-01-23
US62/449,325 2017-01-23
US15/868,347 US11024531B2 (en) 2017-01-23 2018-01-11 Optimized low energy / high productivity deposition system
US15/868,347 2018-01-11

Publications (2)

Publication Number Publication Date
TW202344702A TW202344702A (zh) 2023-11-16
TWI880158B true TWI880158B (zh) 2025-04-11

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TW112101156A TWI880158B (zh) 2017-01-23 2018-01-22 最佳化低能量/高生產率沉積系統
TW107102145A TWI741133B (zh) 2017-01-23 2018-01-22 最佳化低能量/高生產率沉積系統
TW110132580A TWI792531B (zh) 2017-01-23 2018-01-22 最佳化低能量/高生產率沉積系統

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TW110132580A TWI792531B (zh) 2017-01-23 2018-01-22 最佳化低能量/高生產率沉積系統

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US (2) US11024531B2 (cg-RX-API-DMAC7.html)
EP (1) EP3352205B1 (cg-RX-API-DMAC7.html)
JP (3) JP7394520B2 (cg-RX-API-DMAC7.html)
KR (2) KR102533126B1 (cg-RX-API-DMAC7.html)
CN (2) CN114551293A (cg-RX-API-DMAC7.html)
SG (1) SG10201800524XA (cg-RX-API-DMAC7.html)
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11024531B2 (en) * 2017-01-23 2021-06-01 Lam Research Corporation Optimized low energy / high productivity deposition system
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
US10796940B2 (en) 2018-11-05 2020-10-06 Lam Research Corporation Enhanced automatic wafer centering system and techniques for same
WO2020205586A1 (en) * 2019-03-29 2020-10-08 Lam Research Corporation Wafer placement correction in indexed multi-station processing chambers
US10998209B2 (en) * 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11883958B2 (en) 2019-06-07 2024-01-30 Applied Materials, Inc. Robot apparatus including dual end effectors with variable pitch and methods
WO2021011229A1 (en) * 2019-07-12 2021-01-21 Applied Materials, Inc. Robot for simultaneous substrate transfer
US11117265B2 (en) * 2019-07-12 2021-09-14 Applied Materials, Inc. Robot for simultaneous substrate transfer
CN120663299A (zh) 2019-07-26 2025-09-19 朗姆研究公司 用于自动化晶片搬运机械手教导与健康检查的整合适应性定位系统及例程
KR102631418B1 (ko) * 2019-08-08 2024-01-29 램 리써치 코포레이션 멀티-스테이션 프로세스 모듈에서 웨이퍼 이송을 위한 스핀들 어셈블리 (spindle assembly)
KR102695104B1 (ko) 2019-08-16 2024-08-14 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 방법 및 장치
JP7490412B2 (ja) * 2020-03-27 2024-05-27 川崎重工業株式会社 ロボットシステム及びその制御方法
US20230352279A1 (en) * 2020-06-25 2023-11-02 Lam Research Corporation Multi-station processing tools with station-varying support features for backside processing
CN112594439B (zh) * 2020-09-29 2022-11-25 如皋市蓝鹰齿轮制造有限公司 一种便于拆装的多回转型阀门齿轮箱及其安装方法
KR102459642B1 (ko) * 2020-12-21 2022-10-27 주식회사 테스 기판처리장치의 기판이송방법
CN114695216B (zh) * 2020-12-31 2025-10-28 拓荆科技股份有限公司 传送晶圆的方法和机械手臂
JP7617745B2 (ja) * 2021-01-05 2025-01-20 東京エレクトロン株式会社 プロセスモジュール、基板処理システムおよび処理方法
JP7617747B2 (ja) * 2021-01-07 2025-01-20 東京エレクトロン株式会社 処理モジュールおよび処理方法
JP7634390B2 (ja) * 2021-03-12 2025-02-21 東京エレクトロン株式会社 基板処理装置及び基板処理装置の制御方法
KR20230173007A (ko) * 2021-04-27 2023-12-26 램 리써치 코포레이션 웨이퍼 센터링 능력이 있는 회전 인덱서들
KR102857505B1 (ko) * 2021-11-29 2025-09-09 주식회사 원익아이피에스 기판처리장치
JP2024544192A (ja) 2021-12-03 2024-11-28 ラム リサーチ コーポレーション マルチステーション半導体処理チャンバ用のダイレクトピックロボット
CN114877080B (zh) * 2022-05-10 2024-12-10 江苏高特阀业有限公司 一种防止误操作的阀门
CN116072571A (zh) * 2023-01-13 2023-05-05 北京北方华创微电子装备有限公司 物料传输控制方法、工艺腔室模块及半导体工艺设备
KR20250010233A (ko) * 2023-07-12 2025-01-21 한화정밀기계 주식회사 기판 처리 장치 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040013497A1 (en) * 1998-12-01 2004-01-22 Hidenobu Shirai Semiconductor transfer and manufacturing apparatus
US20080178694A1 (en) * 2007-01-25 2008-07-31 Barford Lee A Dynamic environment measurements
TWI792531B (zh) * 2017-01-23 2023-02-11 美商蘭姆研究公司 最佳化低能量/高生產率沉積系統

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
JPH11163075A (ja) * 1997-12-01 1999-06-18 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
JP4253107B2 (ja) * 2000-08-24 2009-04-08 キヤノンアネルバ株式会社 基板処理装置及びその増設方法
JP5134182B2 (ja) 2001-07-13 2013-01-30 ブルックス オートメーション インコーポレイテッド 独立多エンドエフェクタを備えた基板移送装置
US6949177B2 (en) * 2001-08-16 2005-09-27 Oriol Inc. System and method for processing semiconductor wafers using different wafer processes
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US20060137609A1 (en) * 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
TWI476855B (zh) 2006-05-03 2015-03-11 Gen Co Ltd 基板傳輸設備、和使用該設備的高速基板處理系統
KR100818044B1 (ko) * 2006-05-04 2008-03-31 위순임 기판 지지대와 기판 반송 장치 및 이를 이용한 기판 처리시스템
US20080175694A1 (en) 2007-01-19 2008-07-24 Dong-Seok Park Unit and method for transferring substrates and apparatus and method for treating substrates with the unit
KR100803559B1 (ko) * 2007-05-02 2008-02-15 피에스케이 주식회사 기판 반송 유닛 및 방법, 그리고 상기 유닛을 가지는 기판처리 장치 및 상기 유닛을 이용한 기판 처리 방법
US20080219807A1 (en) 2007-03-05 2008-09-11 Van Der Meulen Peter Semiconductor manufacturing process modules
US9117870B2 (en) 2008-03-27 2015-08-25 Lam Research Corporation High throughput cleaner chamber
US8777547B2 (en) 2009-01-11 2014-07-15 Applied Materials, Inc. Systems, apparatus and methods for transporting substrates
JP2011199121A (ja) * 2010-03-23 2011-10-06 Ulvac Japan Ltd 搬送装置
JP2012049404A (ja) * 2010-08-27 2012-03-08 Ulvac Japan Ltd 真空処理装置
CN201901699U (zh) 2010-09-17 2011-07-20 中微半导体设备(上海)有限公司 自动化基片传输和原位基片测试的mocvd处理系统
US9177842B2 (en) 2011-08-10 2015-11-03 Applied Materials, Inc. Degassing apparatus adapted to process substrates in multiple tiers with second actuator
US9202733B2 (en) 2011-11-07 2015-12-01 Persimmon Technologies Corporation Robot system with independent arms
JP6295037B2 (ja) * 2013-08-08 2018-03-14 日本電産サンキョー株式会社 産業用ロボット
WO2015066624A1 (en) 2013-11-04 2015-05-07 Applied Materials, Inc Transfer chambers with an increased number of sides, semiconductor device manufacturing processing tools, and processing methods
KR101530024B1 (ko) 2013-12-20 2015-06-22 주식회사 유진테크 기판 처리 모듈, 이를 포함하는 기판 처리 장치 및 기판 전달 방법
US9916995B2 (en) * 2014-02-24 2018-03-13 Lam Research Corporation Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations
JP6271322B2 (ja) * 2014-03-31 2018-01-31 東京エレクトロン株式会社 基板処理システム
CN104120389B (zh) 2014-08-04 2016-08-24 上海和辉光电有限公司 镀膜设备
CN104846337A (zh) 2015-04-30 2015-08-19 北京欣奕华科技有限公司 一种蒸镀设备及蒸镀生产线

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040013497A1 (en) * 1998-12-01 2004-01-22 Hidenobu Shirai Semiconductor transfer and manufacturing apparatus
US20080178694A1 (en) * 2007-01-25 2008-07-31 Barford Lee A Dynamic environment measurements
TWI792531B (zh) * 2017-01-23 2023-02-11 美商蘭姆研究公司 最佳化低能量/高生產率沉積系統

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