TWI879795B - 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 Download PDF

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Publication number
TWI879795B
TWI879795B TW109129900A TW109129900A TWI879795B TW I879795 B TWI879795 B TW I879795B TW 109129900 A TW109129900 A TW 109129900A TW 109129900 A TW109129900 A TW 109129900A TW I879795 B TWI879795 B TW I879795B
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TW
Taiwan
Prior art keywords
film
substrate
thin film
layer
reflective
Prior art date
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TW109129900A
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English (en)
Chinese (zh)
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TW202121502A (zh
Inventor
鈴木宏太
茶園佳代
Original Assignee
日商Ｈｏｙａ股份有限公司
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Publication of TW202121502A publication Critical patent/TW202121502A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/40—Time-of-flight spectrometers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109129900A 2019-09-04 2020-09-01 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 TWI879795B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-161217 2019-09-04
JP2019161217A JP7379027B2 (ja) 2019-09-04 2019-09-04 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW202121502A TW202121502A (zh) 2021-06-01
TWI879795B true TWI879795B (zh) 2025-04-11

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW109129900A TWI879795B (zh) 2019-09-04 2020-09-01 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
TW114109937A TW202527069A (zh) 2019-09-04 2020-09-01 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

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TW114109937A TW202527069A (zh) 2019-09-04 2020-09-01 反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US12105411B2 (OSRAM)
JP (2) JP7379027B2 (OSRAM)
KR (1) KR20220054280A (OSRAM)
TW (2) TWI879795B (OSRAM)
WO (1) WO2021044890A1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022239752A1 (ja) * 2021-05-14 2022-11-17 Ａｇｃ株式会社 反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付き基板
US12353120B2 (en) * 2021-07-30 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
JPWO2023037980A1 (OSRAM) * 2021-09-07 2023-03-16
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
JP7669321B2 (ja) * 2022-09-01 2025-04-28 信越化学工業株式会社 反射型マスクブランクおよび反射型マスクの製造方法
KR20240043589A (ko) * 2022-09-27 2024-04-03 삼성전자주식회사 기판 처리 장치 및 그 장치를 이용한 기판 처리 방법
JP7681153B1 (ja) * 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006176819A (ja) * 2004-12-22 2006-07-06 Nikon Corp 成膜装置、成膜方法、多層膜反射鏡及びｅｕｖ露光装置
CN102203906A (zh) * 2008-10-30 2011-09-28 旭硝子株式会社 Euv光刻用反射型掩模坯料
JP2017182057A (ja) * 2016-03-28 2017-10-05 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2887618B2 (ja) * 1990-09-21 1999-04-26 信越半導体株式会社 半導体ウェーハ表面の分析方法
AU2003248251A1 (en) * 2002-07-09 2004-01-23 Nikon Corporation Exposure system
WO2004017140A1 (ja) 2002-08-19 2004-02-26 Hoya Corporation マスクブランクの製造方法、転写マスクの製造方法、マスクブランク製造用スパッタリングターゲット
KR100699858B1 (ko) 2005-08-03 2007-03-27 삼성전자주식회사 극자외선 리소그래피용 반사 디바이스 및 그 제조 방법 및이를 적용한 극자외선 리소그래피용 마스크, 프로젝션광학계 및 리소그래피 장치
US7504185B2 (en) 2005-10-03 2009-03-17 Asahi Glass Company, Limited Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
JP4973888B2 (ja) * 2007-01-26 2012-07-11 信越半導体株式会社 発光素子及びその製造方法
US8562794B2 (en) 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
DE112012000658T5 (de) 2011-02-04 2013-11-07 Asahi Glass Company, Limited Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie
US8734907B2 (en) 2012-02-02 2014-05-27 Sematech, Inc. Coating of shield surfaces in deposition systems
KR101862166B1 (ko) 2012-03-14 2018-05-29 호야 가부시키가이샤 마스크 블랭크, 및 전사용 마스크의 제조방법
JP2014095122A (ja) 2012-11-09 2014-05-22 Ulvac Japan Ltd マグネトロンスパッタ装置
JP2014148706A (ja) 2013-01-31 2014-08-21 Hoya Corp 薄膜付き基板の製造装置及び製造方法、並びに転写用マスクの製造方法
KR102109129B1 (ko) 2013-07-02 2020-05-08 삼성전자주식회사 반사형 포토마스크 블랭크 및 반사형 포토마스크
JP6316861B2 (ja) 2016-03-24 2018-04-25 Hoya株式会社 成膜装置の立ち上げ方法、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006176819A (ja) * 2004-12-22 2006-07-06 Nikon Corp 成膜装置、成膜方法、多層膜反射鏡及びｅｕｖ露光装置
CN102203906A (zh) * 2008-10-30 2011-09-28 旭硝子株式会社 Euv光刻用反射型掩模坯料
JP2017182057A (ja) * 2016-03-28 2017-10-05 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法

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Publication number Publication date
WO2021044890A1 (ja) 2021-03-11
JP2024003070A (ja) 2024-01-11
JP2021039271A (ja) 2021-03-11
KR20220054280A (ko) 2022-05-02
TW202121502A (zh) 2021-06-01
JP7612809B2 (ja) 2025-01-14
US12105411B2 (en) 2024-10-01
TW202527069A (zh) 2025-07-01
US20220269161A1 (en) 2022-08-25
JP7379027B2 (ja) 2023-11-14

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