TWI859373B - 靜電保護電路以及半導體裝置 - Google Patents

靜電保護電路以及半導體裝置 Download PDF

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Publication number
TWI859373B
TWI859373B TW109142448A TW109142448A TWI859373B TW I859373 B TWI859373 B TW I859373B TW 109142448 A TW109142448 A TW 109142448A TW 109142448 A TW109142448 A TW 109142448A TW I859373 B TWI859373 B TW I859373B
Authority
TW
Taiwan
Prior art keywords
diode
electrostatic protection
protection circuit
semiconductor device
cathode
Prior art date
Application number
TW109142448A
Other languages
English (en)
Chinese (zh)
Other versions
TW202133385A (zh
Inventor
冨岡勉
Original Assignee
日商艾普凌科有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW202133385A publication Critical patent/TW202133385A/zh
Application granted granted Critical
Publication of TWI859373B publication Critical patent/TWI859373B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/817—FETs in a Darlington configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW109142448A 2019-12-24 2020-12-02 靜電保護電路以及半導體裝置 TWI859373B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019233133A JP7383343B2 (ja) 2019-12-24 2019-12-24 静電保護回路及び半導体装置
JP2019-233133 2019-12-24

Publications (2)

Publication Number Publication Date
TW202133385A TW202133385A (zh) 2021-09-01
TWI859373B true TWI859373B (zh) 2024-10-21

Family

ID=76438388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109142448A TWI859373B (zh) 2019-12-24 2020-12-02 靜電保護電路以及半導體裝置

Country Status (5)

Country Link
US (2) US11791330B2 (enExample)
JP (1) JP7383343B2 (enExample)
KR (1) KR102891162B1 (enExample)
CN (1) CN113035860B (enExample)
TW (1) TWI859373B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881716A (zh) * 2021-09-28 2023-03-31 美垦半导体技术有限公司 功率器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080024946A1 (en) * 2006-07-27 2008-01-31 Nec Electronics Corporation Electrostatic protective circuit and semiconductor device
US20080129674A1 (en) * 2006-11-07 2008-06-05 Hiroyuki Abe Display Device
TW201515354A (zh) * 2013-10-04 2015-04-16 Silicon Motion Inc 靜電放電保護電路及其靜電保護方法

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US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
US5545909A (en) 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
JP2000223499A (ja) 1999-01-28 2000-08-11 Mitsumi Electric Co Ltd 静電保護装置
JP2002050640A (ja) 2000-05-22 2002-02-15 Sony Corp 電界効果トランジスタの保護回路及び半導体装置
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
TW483143B (en) * 2001-02-05 2002-04-11 Vanguard Int Semiconduct Corp Voltage control device for electrostatic discharge protection and its related circuit
US6710990B2 (en) * 2002-01-22 2004-03-23 Lsi Logic Corporation Low voltage breakdown element for ESD trigger device
US8560047B2 (en) 2006-06-16 2013-10-15 Board Of Regents Of The University Of Nebraska Method and apparatus for computer aided surgery
US7817459B2 (en) * 2007-01-24 2010-10-19 Keystone Semiconductor Inc. Depletion-mode MOSFET circuit and applications
US8530904B2 (en) * 2010-03-19 2013-09-10 Infineon Technologies Austria Ag Semiconductor device including a normally-on transistor and a normally-off transistor
KR101799017B1 (ko) * 2011-08-18 2017-11-20 에스케이하이닉스 주식회사 전압 안정화 회로를 구비한 반도체 집적 회로
JP6201422B2 (ja) * 2013-05-22 2017-09-27 富士電機株式会社 半導体装置
JP2015095541A (ja) 2013-11-12 2015-05-18 パナソニックＩｐマネジメント株式会社 サージ保護装置
JP6291929B2 (ja) * 2014-03-14 2018-03-14 富士電機株式会社 半導体装置
JP6223918B2 (ja) * 2014-07-07 2017-11-01 株式会社東芝 半導体装置
JP6238860B2 (ja) 2014-09-01 2017-11-29 三菱電機株式会社 電力用スイッチングデバイス駆動回路
US9625925B2 (en) * 2014-11-24 2017-04-18 Silicon Laboratories Inc. Linear regulator having a closed loop frequency response based on a decoupling capacitance
US9837399B2 (en) 2015-07-24 2017-12-05 Semiconductor Components Industries, Llc Cascode configured semiconductor component and method
CN107658856B (zh) * 2017-10-30 2024-03-26 长鑫存储技术有限公司 一种静电保护电路以及集成电路芯片
US10193554B1 (en) * 2017-11-15 2019-01-29 Navitas Semiconductor, Inc. Capacitively coupled level shifter
US11271392B2 (en) * 2019-01-17 2022-03-08 Texas Instruments Incorporated Protection circuit for signal processor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080024946A1 (en) * 2006-07-27 2008-01-31 Nec Electronics Corporation Electrostatic protective circuit and semiconductor device
US20080129674A1 (en) * 2006-11-07 2008-06-05 Hiroyuki Abe Display Device
TW201515354A (zh) * 2013-10-04 2015-04-16 Silicon Motion Inc 靜電放電保護電路及其靜電保護方法

Also Published As

Publication number Publication date
US11791330B2 (en) 2023-10-17
KR20210082087A (ko) 2021-07-02
JP2021101456A (ja) 2021-07-08
CN113035860A (zh) 2021-06-25
TW202133385A (zh) 2021-09-01
JP7383343B2 (ja) 2023-11-20
US20210193649A1 (en) 2021-06-24
US12268032B2 (en) 2025-04-01
KR102891162B1 (ko) 2025-11-25
US20240006408A1 (en) 2024-01-04
CN113035860B (zh) 2025-06-10

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