JP7383343B2 - 静電保護回路及び半導体装置 - Google Patents

静電保護回路及び半導体装置 Download PDF

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Publication number
JP7383343B2
JP7383343B2 JP2019233133A JP2019233133A JP7383343B2 JP 7383343 B2 JP7383343 B2 JP 7383343B2 JP 2019233133 A JP2019233133 A JP 2019233133A JP 2019233133 A JP2019233133 A JP 2019233133A JP 7383343 B2 JP7383343 B2 JP 7383343B2
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JP
Japan
Prior art keywords
diode
electrostatic protection
protection circuit
cathode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019233133A
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English (en)
Japanese (ja)
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JP2021101456A (ja
JP2021101456A5 (enExample
Inventor
勉 冨岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Ablic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Priority to JP2019233133A priority Critical patent/JP7383343B2/ja
Priority to TW109142448A priority patent/TWI859373B/zh
Priority to US17/112,070 priority patent/US11791330B2/en
Priority to KR1020200178913A priority patent/KR102891162B1/ko
Priority to CN202011549252.1A priority patent/CN113035860B/zh
Publication of JP2021101456A publication Critical patent/JP2021101456A/ja
Publication of JP2021101456A5 publication Critical patent/JP2021101456A5/ja
Priority to US18/466,492 priority patent/US12268032B2/en
Application granted granted Critical
Publication of JP7383343B2 publication Critical patent/JP7383343B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/817—FETs in a Darlington configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2019233133A 2019-12-24 2019-12-24 静電保護回路及び半導体装置 Active JP7383343B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019233133A JP7383343B2 (ja) 2019-12-24 2019-12-24 静電保護回路及び半導体装置
TW109142448A TWI859373B (zh) 2019-12-24 2020-12-02 靜電保護電路以及半導體裝置
US17/112,070 US11791330B2 (en) 2019-12-24 2020-12-04 Electrostatic protection circuit and semiconductor device
KR1020200178913A KR102891162B1 (ko) 2019-12-24 2020-12-18 정전 보호 회로 및 반도체 장치
CN202011549252.1A CN113035860B (zh) 2019-12-24 2020-12-24 静电保护电路及半导体装置
US18/466,492 US12268032B2 (en) 2019-12-24 2023-09-13 Electrostatic protection circuit and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019233133A JP7383343B2 (ja) 2019-12-24 2019-12-24 静電保護回路及び半導体装置

Publications (3)

Publication Number Publication Date
JP2021101456A JP2021101456A (ja) 2021-07-08
JP2021101456A5 JP2021101456A5 (enExample) 2022-07-13
JP7383343B2 true JP7383343B2 (ja) 2023-11-20

Family

ID=76438388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019233133A Active JP7383343B2 (ja) 2019-12-24 2019-12-24 静電保護回路及び半導体装置

Country Status (5)

Country Link
US (2) US11791330B2 (enExample)
JP (1) JP7383343B2 (enExample)
KR (1) KR102891162B1 (enExample)
CN (1) CN113035860B (enExample)
TW (1) TWI859373B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115881716A (zh) * 2021-09-28 2023-03-31 美垦半导体技术有限公司 功率器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034524A (ja) 2006-07-27 2008-02-14 Nec Electronics Corp 静電保護回路および半導体装置
US20140039520A1 (en) 2006-06-16 2014-02-06 Hani Haider Method and apparatus for computer aided surgery
JP2015095541A (ja) 2013-11-12 2015-05-18 パナソニックＩｐマネジメント株式会社 サージ保護装置
JP2016052197A (ja) 2014-09-01 2016-04-11 三菱電機株式会社 電力用スイッチングデバイス駆動回路
US20170025403A1 (en) 2015-07-24 2017-01-26 Semiconductor Components Industries, Llc Cascode configured semiconductor component and method

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Publication number Priority date Publication date Assignee Title
US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
US5545909A (en) * 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
JP2000223499A (ja) 1999-01-28 2000-08-11 Mitsumi Electric Co Ltd 静電保護装置
JP2002050640A (ja) 2000-05-22 2002-02-15 Sony Corp 電界効果トランジスタの保護回路及び半導体装置
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
TW483143B (en) * 2001-02-05 2002-04-11 Vanguard Int Semiconduct Corp Voltage control device for electrostatic discharge protection and its related circuit
US6710990B2 (en) * 2002-01-22 2004-03-23 Lsi Logic Corporation Low voltage breakdown element for ESD trigger device
JP2008116770A (ja) * 2006-11-07 2008-05-22 Hitachi Displays Ltd 表示装置
US7817459B2 (en) * 2007-01-24 2010-10-19 Keystone Semiconductor Inc. Depletion-mode MOSFET circuit and applications
US8530904B2 (en) * 2010-03-19 2013-09-10 Infineon Technologies Austria Ag Semiconductor device including a normally-on transistor and a normally-off transistor
KR101799017B1 (ko) * 2011-08-18 2017-11-20 에스케이하이닉스 주식회사 전압 안정화 회로를 구비한 반도체 집적 회로
JP6201422B2 (ja) * 2013-05-22 2017-09-27 富士電機株式会社 半導体装置
TWI501498B (zh) * 2013-10-04 2015-09-21 Silicon Motion Inc 靜電放電保護電路及其靜電保護方法
JP6291929B2 (ja) * 2014-03-14 2018-03-14 富士電機株式会社 半導体装置
JP6223918B2 (ja) * 2014-07-07 2017-11-01 株式会社東芝 半導体装置
US9625925B2 (en) * 2014-11-24 2017-04-18 Silicon Laboratories Inc. Linear regulator having a closed loop frequency response based on a decoupling capacitance
CN107658856B (zh) * 2017-10-30 2024-03-26 长鑫存储技术有限公司 一种静电保护电路以及集成电路芯片
US10193554B1 (en) * 2017-11-15 2019-01-29 Navitas Semiconductor, Inc. Capacitively coupled level shifter
US11271392B2 (en) * 2019-01-17 2022-03-08 Texas Instruments Incorporated Protection circuit for signal processor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140039520A1 (en) 2006-06-16 2014-02-06 Hani Haider Method and apparatus for computer aided surgery
JP2008034524A (ja) 2006-07-27 2008-02-14 Nec Electronics Corp 静電保護回路および半導体装置
JP2015095541A (ja) 2013-11-12 2015-05-18 パナソニックＩｐマネジメント株式会社 サージ保護装置
JP2016052197A (ja) 2014-09-01 2016-04-11 三菱電機株式会社 電力用スイッチングデバイス駆動回路
US20170025403A1 (en) 2015-07-24 2017-01-26 Semiconductor Components Industries, Llc Cascode configured semiconductor component and method

Also Published As

Publication number Publication date
TWI859373B (zh) 2024-10-21
JP2021101456A (ja) 2021-07-08
CN113035860A (zh) 2021-06-25
CN113035860B (zh) 2025-06-10
TW202133385A (zh) 2021-09-01
KR20210082087A (ko) 2021-07-02
US20210193649A1 (en) 2021-06-24
KR102891162B1 (ko) 2025-11-25
US20240006408A1 (en) 2024-01-04
US11791330B2 (en) 2023-10-17
US12268032B2 (en) 2025-04-01

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