TW202133385A - 靜電保護電路以及半導體裝置 - Google Patents

靜電保護電路以及半導體裝置 Download PDF

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TW202133385A
TW202133385A TW109142448A TW109142448A TW202133385A TW 202133385 A TW202133385 A TW 202133385A TW 109142448 A TW109142448 A TW 109142448A TW 109142448 A TW109142448 A TW 109142448A TW 202133385 A TW202133385 A TW 202133385A
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electrostatic protection
diode
protection circuit
semiconductor device
cathode
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冨岡勉
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日商艾普凌科有限公司
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0281—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements field effect transistors in a "Darlington-like" configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Semiconductor Integrated Circuits (AREA)
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Abstract

靜電保護電路以及半導體裝置的特徵在於包括：第一二極體，陽極連接於訊號端子；第二二極體，陰極連接於第一二極體的陰極且陽極連接於GND端子；以及耗盡型MOS電晶體，與第一二極體並聯連接。

Description

靜電保護電路以及半導體裝置
本發明是有關於一種半導體裝置的靜電保護電路。
先前的半導體裝置的靜電保護電路包括PNP電晶體，所述PNP電晶體的射極端子連接於訊號端子、集極端子連接於接地（Ground，GND）端子。於包括以所述方式構成的靜電保護電路的半導體裝置中，於訊號端子降低至GND端子的電位以下時，亦不會引起運作上的問題（例如，參照專利文獻1）。 [現有技術文獻] [專利文獻]
[專利文獻1]日本專利特開2000-223499號公報
[發明所欲解決之課題]
如圖6所示，靜電保護電路60的靜電保護用的PNP電晶體（由實線表示）於藉由互補金屬氧化物半導體（Complementary Metal Oxide Semiconductor，CMOS）製程進行製造的情況下，通常由N阱（Nwell）構成基極。以所述方式構成的PNP電晶體被視為，P型區域61為陽極且N阱為陰極的二極體D1與P型區域62為陽極且N阱為陰極的二極體D2的串聯連接。另外，二極體D1的陽極、N阱、P基底（Psubstrate，Psub）被視為寄生PNP電晶體（由虛線表示）的射極、基極、集極。
然而，於成為高溫時，二極體D2的漏電流經由二極體D1而流動。寄生PNP電晶體中流動以其電流放大因數放大了漏電流的集極電流。因此，先前的靜電保護電路中，於成為高溫時寄生PNP電晶體的集極電流自訊號端子流向GND端子，因而訊號端子的輸入電流增大。
本發明的目的在於提供一種於高溫下訊號端子的輸入電流的增加量少的靜電保護電路以及半導體裝置。 [解決課題之手段]
本發明的實施形態的靜電保護電路包括：第一二極體，陽極連接於訊號端子；第二二極體，陰極連接於第一二極體的陰極且陽極連接於GND端子；以及耗盡型（depletion-type）MOS電晶體，與第一二極體並聯連接。 另外，本發明的實施形態的半導體裝置於訊號端子與內部電路之間包括所述靜電保護電路。 [發明的效果]
根據本發明的靜電保護電路，與第一二極體並聯地設置耗盡型MOS電晶體，故而可提供一種於高溫下訊號端子的輸入電流的增加量少的靜電保護電路以及半導體裝置。
以下，參照圖式對本發明的實施形態進行說明。本發明的實施形態的半導體裝置包括：訊號端子，輸入輸出訊號；內部電路，連接於訊號端子；以及靜電保護電路，設置於訊號端子與內部電路之間。關於半導體裝置的內部電路，省略詳細的說明。
＜第一實施形態＞ 圖1是表示包括第一實施形態的靜電保護電路的半導體裝置的電路圖。
半導體裝置100包括靜電保護電路10與內部電路40。靜電保護電路10包括二極體11、二極體12、耗盡型的p通道型MOS電晶體（以下為pMOS電晶體）13以及電阻14。電阻14是內部電路40的電晶體的閘極保護電阻。
二極體11的陽極連接於訊號端子，陰極連接於二極體12的陰極。二極體12的陽極連接於GND端子。pMOS電晶體13的汲極連接於內部電路40，閘極與源極及基板連接於二極體11的陰極。電阻14連接於二極體11的陽極與pMOS電晶體13的汲極之間。
接著，對第一實施形態的靜電保護電路10的運作進行說明。再者，於靜電保護電路10中，由二極體11的陽極、與陰極及P基底構成寄生PNP電晶體與現有技術相同。
＜訊號端子的電壓高於GND端子的電壓的穩定狀態＞ pMOS電晶體13的閘極與源極連接，但由於為耗盡型，故於汲極-源極間存在通道。相較於二極體12中流動的漏電流而言pMOS電晶體13的電流供給能力足夠大，因此由pMOS電晶體13的導通電阻所致的電壓下降接近0 V。因此，二極體12的漏電流大部分於pMOS電晶體13中流動，而於二極體11中無電流流動。因此，寄生PNP電晶體中無電流流動，因而可將於訊號端子中流動的電流抑制得小。
＜訊號端子的電壓低於GND端子的電壓的反向連接狀態＞ pMOS電晶體13作為過驅動電壓為｜VTPD｜（臨限電壓）的恆流電源運作。逆流電流自GND端子經由二極體12與pMOS電晶體13而流向訊號端子，但可藉由pMOS電晶體13將其抑制為可容許的電流。因此，即便與二極體11並聯地連接pMOS電晶體13，於反向連接狀態下半導體裝置的運作亦不會產生問題。
如以上所說明般，本實施形態的靜電保護電路10藉由包括與二極體11並聯的pMOS電晶體13，從而於高溫下不會在寄生電晶體中流動電流，因此能夠減少訊號端子的輸入電流的增加量。
再者，即便將pMOS電晶體13置換為如圖2所示般連接的耗盡型的n通道型MOS電晶體23，亦可獲得同樣的效果。
＜第二實施形態＞ 圖3是表示包括第二實施形態的靜電保護電路的半導體裝置的電路圖。
相對於圖1的靜電保護電路10，圖3的靜電保護電路20更包括電阻15。再者，對與圖1所示的靜電保護電路10相同的構成元件標注相同的符號，並適宜省略重覆的說明。
＜訊號端子的電壓高於GND端子的電壓的穩定狀態＞ 於pMOS電晶體13的源極與二極體12的陰極之間連接有電阻15。電阻15的電阻值足夠小，因而可進行與圖1的靜電保護電路10同樣的運作。
＜訊號端子的電壓低於GND端子的電壓的反向連接狀態＞ 於反向連接狀態下，於pMOS電晶體13中流動的電流大致由｜VTPD｜/R決定。此處，R為電阻15的電阻值。即，只要將該電流設定成作為逆流電流可容許的電流值即可。因此，相較於第一實施形態的靜電保護電路10而言，可減小pMOS電晶體13的尺寸。
如以上所說明般，本實施形態的靜電保護電路20藉由包括與二極體11並聯的pMOS電晶體13及電阻15，從而於高溫下不會在寄生電晶體中流動電流，因此能夠減少訊號端子的輸入電流的增加量。
再者，即便將pMOS電晶體13與電阻15置換為如圖4所示般連接的耗盡型的n通道型MOS電晶體23與電阻25，亦可獲得同樣的效果。
以上對本發明的實施形態進行了說明，但本發明並不限定於所述實施形態，可在不脫離本發明的主旨的範圍內進行各種變更。
例如，亦可將二極體11與二極體12置換為MOS電晶體的靜電保護元件。作為一例，圖5中示出將圖1的靜電保護電路10的二極體置換為增強型的n通道型MOS電晶體31、增強型的n通道型MOS電晶體32的靜電保護電路30。
另外，例如，電阻14亦可連接於pMOS電晶體13的汲極（nMOS電晶體23的源極）與內部電路40之間。於該情況下，為了加以保護，例如可於pMOS電晶體13的閘極、源極及基板的連接點與二極體11的陰極之間，與pMOS電晶體13的汲極（nMOS電晶體23的源極）和基板的路徑串聯地設置電阻。
10、20、30、60:靜電保護電路 11、12、D1、D2:二極體 13:耗盡型的p通道型MOS電晶體（pMOS電晶體） 14、15、25:電阻 23:耗盡型的n通道型MOS電晶體（nMOS電晶體） 31、32:增強型的n通道型MOS電晶體 40:內部電路 61、62:P型區域 100:半導體裝置
圖1是表示包括第一實施形態的靜電保護電路的半導體裝置的電路圖。 圖2是表示第一實施形態的靜電保護電路的另一示例的電路圖。 圖3是表示包括第二實施形態的靜電保護電路的半導體裝置的電路圖。 圖4是表示第二實施形態的靜電保護電路的另一示例的電路圖。 圖5是表示第一實施形態的靜電保護電路的又一示例的電路圖。 圖6是包括先前的靜電保護電路的半導體裝置的剖面圖。
10:靜電保護電路
11、12:二極體
13:耗盡型的p通道型MOS電晶體(pMOS電晶體)
14:電阻
40:內部電路
100:半導體裝置

Claims (6)

  1. 一種靜電保護電路，其為半導體裝置的訊號端子的靜電保護電路，其特徵在於包括： 第一二極體，陽極連接於所述訊號端子； 第二二極體，陰極連接於所述第一二極體的陰極且陽極連接於接地端子；以及 耗盡型金屬氧化物半導體電晶體，與所述第一二極體並聯連接。
  2. 如請求項1所述的靜電保護電路，其中 所述耗盡型金屬氧化物半導體電晶體為汲極連接於內部電路、閘極與源極及基板連接於所述第一二極體的陰極的p型金屬氧化物半導體電晶體。
  3. 如請求項2所述的靜電保護電路，其中於所述p型金屬氧化物半導體電晶體的源極與所述第一二極體的陰極之間連接有電阻。
  4. 如請求項1所述的靜電保護電路，其中 所述耗盡型金屬氧化物半導體電晶體為閘極與源極及基板連接於內部電路、汲極連接於所述第一二極體的陰極的n型金屬氧化物半導體電晶體。
  5. 如請求項4所述的靜電保護電路，其中於所述n型金屬氧化物半導體電晶體的源極與所述內部電路之間連接有電阻。
  6. 一種半導體裝置，其特徵在於在所述訊號端子與所述內部電路之間包括如請求項2至請求項5中任一項所述的靜電保護電路。
TW109142448A 2019-12-24 2020-12-02 靜電保護電路以及半導體裝置 TW202133385A (zh)

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US20240006408A1 (en) 2024-01-04
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US20210193649A1 (en) 2021-06-24
KR20210082087A (ko) 2021-07-02

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