TWI853949B - 磊晶生長裝置的製程腔室 - Google Patents

磊晶生長裝置的製程腔室 Download PDF

Info

Publication number
TWI853949B
TWI853949B TW109119631A TW109119631A TWI853949B TW I853949 B TWI853949 B TW I853949B TW 109119631 A TW109119631 A TW 109119631A TW 109119631 A TW109119631 A TW 109119631A TW I853949 B TWI853949 B TW I853949B
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
plate
process chamber
carrier plate
support
Prior art date
Application number
TW109119631A
Other languages
English (en)
Chinese (zh)
Other versions
TW202105569A (zh
Inventor
岡部晃
竹永幸生
Original Assignee
日商愛必克股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商愛必克股份有限公司 filed Critical 日商愛必克股份有限公司
Publication of TW202105569A publication Critical patent/TW202105569A/zh
Application granted granted Critical
Publication of TWI853949B publication Critical patent/TWI853949B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW109119631A 2019-07-25 2020-06-11 磊晶生長裝置的製程腔室 TWI853949B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2019/029303 WO2021014657A1 (ja) 2019-07-25 2019-07-25 エピタキシャル成長装置のプロセスチャンバ
WOPCT/JP2019/029303 2019-07-25

Publications (2)

Publication Number Publication Date
TW202105569A TW202105569A (zh) 2021-02-01
TWI853949B true TWI853949B (zh) 2024-09-01

Family

ID=74192653

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109119631A TWI853949B (zh) 2019-07-25 2020-06-11 磊晶生長裝置的製程腔室

Country Status (7)

Country Link
US (1) US20220254676A1 (enExample)
EP (1) EP4006956A4 (enExample)
JP (1) JP7311916B2 (enExample)
KR (1) KR102697878B1 (enExample)
CN (1) CN114026675A (enExample)
TW (1) TWI853949B (enExample)
WO (1) WO2021014657A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102478833B1 (ko) * 2021-09-29 2022-12-16 에스케이씨솔믹스 주식회사 서셉터 샤프트 가공 지그
CN116024653A (zh) * 2023-02-28 2023-04-28 西安奕斯伟材料科技股份有限公司 升降装置和外延反应设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124287A (ja) * 2001-10-19 2003-04-25 Komatsu Electronic Metals Co Ltd エピタキシャルウェハ製造装置及びウェハ製造方法
JP2016207932A (ja) * 2015-04-27 2016-12-08 株式会社Sumco サセプタ及びエピタキシャル成長装置
CN107851560A (zh) * 2015-04-27 2018-03-27 胜高股份有限公司 基座、外延生长装置、及外延晶圆

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6120609A (en) * 1996-10-25 2000-09-19 Applied Materials, Inc. Self-aligning lift mechanism
JP2001024047A (ja) 1999-07-07 2001-01-26 Applied Materials Inc 基板支持装置
DE10051125A1 (de) * 2000-10-16 2002-05-02 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
JP4477784B2 (ja) * 2001-02-02 2010-06-09 東京エレクトロン株式会社 被処理体の載置機構
US20040177813A1 (en) * 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
JP4687534B2 (ja) 2005-09-30 2011-05-25 東京エレクトロン株式会社 基板の載置機構及び基板処理装置
JP4957622B2 (ja) 2008-03-31 2012-06-20 富士通セミコンダクター株式会社 基板支持装置
US20140007808A1 (en) * 2011-07-05 2014-01-09 Epicrew Corporation Susceptor Device And Deposition Apparatus Having The Same
JP5386046B1 (ja) * 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
JP6068255B2 (ja) 2013-05-13 2017-01-25 大陽日酸株式会社 気相成長装置および気相成長装置の部材搬送方法
JP6428358B2 (ja) * 2015-02-20 2018-11-28 株式会社Sumco エピタキシャル成長装置及びサセプタサポートシャフト
US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
WO2019004201A1 (ja) 2017-06-26 2019-01-03 エピクルー ユーエスエー インコーポレイテッド プロセスチャンバ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124287A (ja) * 2001-10-19 2003-04-25 Komatsu Electronic Metals Co Ltd エピタキシャルウェハ製造装置及びウェハ製造方法
JP2016207932A (ja) * 2015-04-27 2016-12-08 株式会社Sumco サセプタ及びエピタキシャル成長装置
CN107851560A (zh) * 2015-04-27 2018-03-27 胜高股份有限公司 基座、外延生长装置、及外延晶圆

Also Published As

Publication number Publication date
EP4006956A1 (en) 2022-06-01
TW202105569A (zh) 2021-02-01
JPWO2021014657A1 (enExample) 2021-01-28
EP4006956A4 (en) 2023-04-19
KR20220042114A (ko) 2022-04-04
JP7311916B2 (ja) 2023-07-20
WO2021014657A1 (ja) 2021-01-28
CN114026675A (zh) 2022-02-08
KR102697878B1 (ko) 2024-08-23
US20220254676A1 (en) 2022-08-11

Similar Documents

Publication Publication Date Title
KR102010720B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN102150251B (zh) 基板处理装置及基板处理方法
JP2019036717A (ja) 基材リフト機構及びこれを含む反応器
TWI470722B (zh) 基板搬送機構、基板處理裝置及半導體裝置之製造方法
JP6461621B2 (ja) 基板処理方法および基板処理装置
TWI853949B (zh) 磊晶生長裝置的製程腔室
WO2019004201A1 (ja) プロセスチャンバ
JP6618876B2 (ja) 基板処理装置、搬送方法およびサセプタ
CN104115265B (zh) 基板处理模块以及包含该基板处理模块的基板处理装置
JP2018163913A (ja) 基板処理装置
KR20180082574A (ko) 웨이퍼 지지 기구, 화학 기상 성장 장치 및 에피택셜 웨이퍼의 제조 방법
TWI644385B (zh) 基板搬運機器人及使用該基板搬運機器人之基板處理設備
JPWO2022172827A5 (enExample)
JP2022550898A (ja) 搬送チャンバおよびエピタキシャル反応器を有する処理装置
KR20200079583A (ko) 스핀들유닛 및 기판이송방법
US20050016466A1 (en) Susceptor with raised tabs for semiconductor wafer processing
JP2022550902A (ja) 貯蔵チャンバおよびエピタキシャル反応器を有する処理装置
KR102295249B1 (ko) 기판처리장치
KR101651882B1 (ko) 기판처리장치
CN112789717A (zh) 真空处理设备和真空处理衬底的方法
JP2022550900A (ja) ローディング又はアンローディング群およびエピタキシャル反応器を有する処理装置
JP7257916B2 (ja) 気相成長装置の基板搬送機構
KR20080034725A (ko) 로드락 챔버 및 로드락 챔버에서의 웨이퍼의 로딩, 언로딩방법
JP5291300B2 (ja) ワーク処理装置
JP2986739B2 (ja) 縦型加熱処理装置における加熱処理方法