TWI841110B - 從高深寬比結構移除碎片 - Google Patents
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- TWI841110B TWI841110B TW111147463A TW111147463A TWI841110B TW I841110 B TWI841110 B TW I841110B TW 111147463 A TW111147463 A TW 111147463A TW 111147463 A TW111147463 A TW 111147463A TW I841110 B TWI841110 B TW I841110B
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
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- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N2223/60—Specific applications or type of materials
- G01N2223/652—Specific applications or type of materials impurities, foreign matter, trace amounts
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
- G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
- G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q20/00—Monitoring the movement or position of the probe
- G01Q20/02—Monitoring the movement or position of the probe by optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
- G01Q60/42—Functionalisation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
- G01Q70/12—Nanotube tips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Computer Networks & Wireless Communication (AREA)
- Optics & Photonics (AREA)
- Sampling And Sample Adjustment (AREA)
- Cleaning In General (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Filtering Materials (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/160,263 US10384238B2 (en) | 2007-09-17 | 2016-05-20 | Debris removal in high aspect structures |
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| DE102021201669B4 (de) * | 2021-02-22 | 2023-08-17 | Carl Zeiss Smt Gmbh | Verfahren und vorrichtung zum bearbeiten einer probe |
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| JP2005084582A (ja) * | 2003-09-11 | 2005-03-31 | Sii Nanotechnology Inc | フォトマスクのパーティクル除去方法 |
| TW200924039A (en) * | 2007-09-17 | 2009-06-01 | Rave Llc | Debris removal in high aspect structures |
| JP2009265176A (ja) * | 2008-04-22 | 2009-11-12 | Toshiba Corp | 異物除去方法、異物除去装置および半導体装置の作製方法 |
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| TW285721B (enExample) * | 1994-12-27 | 1996-09-11 | Siemens Ag | |
| CA2580115C (en) * | 2004-09-03 | 2011-04-05 | Honeywell International Inc. | Drawn gel-spun polyethylene yarns and process for drawing |
| JP2006339472A (ja) * | 2005-06-03 | 2006-12-14 | Matsushita Electric Ind Co Ltd | プローブカード触針のクリーニング装置およびクリーニング方法 |
| JP4820740B2 (ja) * | 2006-12-08 | 2011-11-24 | エスアイアイ・ナノテクノロジー株式会社 | 加工用ダイヤモンド探針の加工方法 |
| JP2008209544A (ja) * | 2007-02-26 | 2008-09-11 | Sii Nanotechnology Inc | フォトマスク上の異物の組成分析方法 |
| JP2009006378A (ja) * | 2007-06-29 | 2009-01-15 | Sii Nanotechnology Inc | 微細加工方法及び微細加工装置 |
| JP5031509B2 (ja) * | 2007-10-23 | 2012-09-19 | キヤノン株式会社 | 近接場光散乱用プローブおよびその製造方法 |
| JP2011133296A (ja) * | 2009-12-24 | 2011-07-07 | Yamaha Corp | クリーニング装置、及び、プローブ針のクリーニング方法 |
| CN102798735B (zh) * | 2012-08-14 | 2015-03-04 | 厦门大学 | 针尖增强暗场显微镜、电化学测试装置和调平系统 |
| JP6215677B2 (ja) * | 2013-12-05 | 2017-10-18 | 株式会社日立ハイテクマニファクチャ&サービス | 顕微ラマン分光装置および顕微ラマン分光システム |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005084582A (ja) * | 2003-09-11 | 2005-03-31 | Sii Nanotechnology Inc | フォトマスクのパーティクル除去方法 |
| TW200924039A (en) * | 2007-09-17 | 2009-06-01 | Rave Llc | Debris removal in high aspect structures |
| JP2009265176A (ja) * | 2008-04-22 | 2009-11-12 | Toshiba Corp | 異物除去方法、異物除去装置および半導体装置の作製方法 |
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| TW202313219A (zh) | 2023-04-01 |
| TWI892579B (zh) | 2025-08-01 |
| TW202446498A (zh) | 2024-12-01 |
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| KR102433627B1 (ko) | 2022-08-18 |
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| TW201805078A (zh) | 2018-02-16 |
| KR20170131264A (ko) | 2017-11-29 |
| EP3251760B1 (en) | 2025-04-09 |
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