TWI841110B - 從高深寬比結構移除碎片 - Google Patents

從高深寬比結構移除碎片 Download PDF

Info

Publication number
TWI841110B
TWI841110B TW111147463A TW111147463A TWI841110B TW I841110 B TWI841110 B TW I841110B TW 111147463 A TW111147463 A TW 111147463A TW 111147463 A TW111147463 A TW 111147463A TW I841110 B TWI841110 B TW I841110B
Authority
TW
Taiwan
Prior art keywords
tip
substrate
debris
energy
collection
Prior art date
Application number
TW111147463A
Other languages
English (en)
Chinese (zh)
Other versions
TW202313219A (zh
Inventor
陶德伊凡 羅賓森
博內比 J 阿盧札
基尼斯吉伯特 羅斯勒
大衛 布林克里
傑弗瑞 E 勒克萊兒
Original Assignee
美商布魯克奈米股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/160,263 external-priority patent/US10384238B2/en
Application filed by 美商布魯克奈米股份有限公司 filed Critical 美商布魯克奈米股份有限公司
Publication of TW202313219A publication Critical patent/TW202313219A/zh
Application granted granted Critical
Publication of TWI841110B publication Critical patent/TWI841110B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/611Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/652Specific applications or type of materials impurities, foreign matter, trace amounts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00Monitoring the movement or position of the probe
    • G01Q20/02Monitoring the movement or position of the probe by optical means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42Functionalisation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08Probe characteristics
    • G01Q70/10Shape or taper
    • G01Q70/12Nanotube tips
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00Applications, other than SPM, of scanning-probe techniques

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Optics & Photonics (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Cleaning In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Filtering Materials (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW111147463A 2016-05-20 2017-05-02 從高深寬比結構移除碎片 TWI841110B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/160,263 US10384238B2 (en) 2007-09-17 2016-05-20 Debris removal in high aspect structures
US15/160,263 2016-05-20

Publications (2)

Publication Number Publication Date
TW202313219A TW202313219A (zh) 2023-04-01
TWI841110B true TWI841110B (zh) 2024-05-01

Family

ID=58772394

Family Applications (3)

Application Number Title Priority Date Filing Date
TW111147463A TWI841110B (zh) 2016-05-20 2017-05-02 從高深寬比結構移除碎片
TW106114454A TWI787181B (zh) 2016-05-20 2017-05-02 從高深寬比結構移除碎片
TW113113483A TWI892579B (zh) 2016-05-20 2017-05-02 從高深寬比結構移除碎片

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106114454A TWI787181B (zh) 2016-05-20 2017-05-02 從高深寬比結構移除碎片
TW113113483A TWI892579B (zh) 2016-05-20 2017-05-02 從高深寬比結構移除碎片

Country Status (4)

Country Link
EP (1) EP3251760B1 (enExample)
JP (1) JP7042039B2 (enExample)
KR (1) KR102433627B1 (enExample)
TW (3) TWI841110B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3964841A1 (de) 2020-09-02 2022-03-09 Siltronic AG Messapparatur und verfahren zum untersuchen eines bereichs einer oberfläche eines substrats mit hilfe einer kraft-messsonde
DE102021201669B4 (de) * 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer probe

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005084582A (ja) * 2003-09-11 2005-03-31 Sii Nanotechnology Inc フォトマスクのパーティクル除去方法
TW200924039A (en) * 2007-09-17 2009-06-01 Rave Llc Debris removal in high aspect structures
JP2009265176A (ja) * 2008-04-22 2009-11-12 Toshiba Corp 異物除去方法、異物除去装置および半導体装置の作製方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05164512A (ja) * 1991-12-13 1993-06-29 Toshiba Corp 表面測定装置
TW285721B (enExample) * 1994-12-27 1996-09-11 Siemens Ag
CA2580115C (en) * 2004-09-03 2011-04-05 Honeywell International Inc. Drawn gel-spun polyethylene yarns and process for drawing
JP2006339472A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Ind Co Ltd プローブカード触針のクリーニング装置およびクリーニング方法
JP4820740B2 (ja) * 2006-12-08 2011-11-24 エスアイアイ・ナノテクノロジー株式会社 加工用ダイヤモンド探針の加工方法
JP2008209544A (ja) * 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
JP2009006378A (ja) * 2007-06-29 2009-01-15 Sii Nanotechnology Inc 微細加工方法及び微細加工装置
JP5031509B2 (ja) * 2007-10-23 2012-09-19 キヤノン株式会社 近接場光散乱用プローブおよびその製造方法
JP2011133296A (ja) * 2009-12-24 2011-07-07 Yamaha Corp クリーニング装置、及び、プローブ針のクリーニング方法
CN102798735B (zh) * 2012-08-14 2015-03-04 厦门大学 针尖增强暗场显微镜、电化学测试装置和调平系统
JP6215677B2 (ja) * 2013-12-05 2017-10-18 株式会社日立ハイテクマニファクチャ&サービス 顕微ラマン分光装置および顕微ラマン分光システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005084582A (ja) * 2003-09-11 2005-03-31 Sii Nanotechnology Inc フォトマスクのパーティクル除去方法
TW200924039A (en) * 2007-09-17 2009-06-01 Rave Llc Debris removal in high aspect structures
JP2009265176A (ja) * 2008-04-22 2009-11-12 Toshiba Corp 異物除去方法、異物除去装置および半導体装置の作製方法

Also Published As

Publication number Publication date
TW202313219A (zh) 2023-04-01
TWI892579B (zh) 2025-08-01
TW202446498A (zh) 2024-12-01
JP2017207755A (ja) 2017-11-24
KR102433627B1 (ko) 2022-08-18
EP3251760A1 (en) 2017-12-06
TWI787181B (zh) 2022-12-21
JP7042039B2 (ja) 2022-03-25
TW201805078A (zh) 2018-02-16
KR20170131264A (ko) 2017-11-29
EP3251760B1 (en) 2025-04-09

Similar Documents

Publication Publication Date Title
US11964310B2 (en) Debris removal from high aspect structures
US11391664B2 (en) Debris removal from high aspect structures
JP7727155B2 (ja) 高アスペクト構造からのデブリ除去
US10618080B2 (en) Debris removal from high aspect structures
TWI841110B (zh) 從高深寬比結構移除碎片
EP3748431B1 (en) Debris removal from high aspect structures