TWI838924B - 半導體記憶裝置的製造方法 - Google Patents

半導體記憶裝置的製造方法 Download PDF

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Publication number
TWI838924B
TWI838924B TW111140269A TW111140269A TWI838924B TW I838924 B TWI838924 B TW I838924B TW 111140269 A TW111140269 A TW 111140269A TW 111140269 A TW111140269 A TW 111140269A TW I838924 B TWI838924 B TW I838924B
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Taiwan
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layer
aforementioned
insulating layer
hole
gate
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TW111140269A
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English (en)
Chinese (zh)
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TW202333351A (zh
Inventor
白田理一郎
原田望
作井康司
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新加坡商新加坡優尼山帝斯電子私人有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW111140269A 2021-10-25 2022-10-24 半導體記憶裝置的製造方法 TWI838924B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2021/039319 WO2023073765A1 (ja) 2021-10-25 2021-10-25 半導体メモリ装置の製造方法
WOPCT/JP2021/039319 2021-10-25

Publications (2)

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TW202333351A TW202333351A (zh) 2023-08-16
TWI838924B true TWI838924B (zh) 2024-04-11

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TW111140269A TWI838924B (zh) 2021-10-25 2022-10-24 半導體記憶裝置的製造方法

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US (1) US20230127781A1 (https=)
JP (1) JPWO2023073765A1 (https=)
TW (1) TWI838924B (https=)
WO (1) WO2023073765A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022269890A1 (ja) * 2021-06-25 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110073866A1 (en) * 2009-09-29 2011-03-31 Samsung Electronics Co., Ltd. Vertical-type semiconductor device
TW201213821A (en) * 2010-09-20 2012-04-01 Himax Display Inc Test method of liquid crystal display panel
US20120327715A1 (en) * 2010-07-02 2012-12-27 Lee Changhyun Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Family Cites Families (10)

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US6111778A (en) * 1999-05-10 2000-08-29 International Business Machines Corporation Body contacted dynamic memory
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
JP3808763B2 (ja) * 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
KR100675297B1 (ko) * 2005-12-19 2007-01-29 삼성전자주식회사 캐패시터가 없는 동적 메모리 셀을 구비한 반도체 메모리장치 및 이 장치의 배치 방법
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays
US7969808B2 (en) * 2007-07-20 2011-06-28 Samsung Electronics Co., Ltd. Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same
KR20150020847A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 3차원 반도체 장치, 이를 구비하는 저항 변화 메모리 장치, 및 그 제조방법
CN107592943B (zh) * 2015-04-29 2022-07-15 芝诺半导体有限公司 提高漏极电流的mosfet和存储单元
US20230363138A1 (en) * 2022-05-06 2023-11-09 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and fabricating methods thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110073866A1 (en) * 2009-09-29 2011-03-31 Samsung Electronics Co., Ltd. Vertical-type semiconductor device
US20120327715A1 (en) * 2010-07-02 2012-12-27 Lee Changhyun Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein
TW201213821A (en) * 2010-09-20 2012-04-01 Himax Display Inc Test method of liquid crystal display panel

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Publication number Publication date
US20230127781A1 (en) 2023-04-27
WO2023073765A1 (ja) 2023-05-04
JPWO2023073765A1 (https=) 2023-05-04
TW202333351A (zh) 2023-08-16

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