JPWO2023073765A1 - - Google Patents
Info
- Publication number
- JPWO2023073765A1 JPWO2023073765A1 JP2023555893A JP2023555893A JPWO2023073765A1 JP WO2023073765 A1 JPWO2023073765 A1 JP WO2023073765A1 JP 2023555893 A JP2023555893 A JP 2023555893A JP 2023555893 A JP2023555893 A JP 2023555893A JP WO2023073765 A1 JPWO2023073765 A1 JP WO2023073765A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/039319 WO2023073765A1 (ja) | 2021-10-25 | 2021-10-25 | 半導体メモリ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023073765A1 true JPWO2023073765A1 (https=) | 2023-05-04 |
| JPWO2023073765A5 JPWO2023073765A5 (https=) | 2024-09-13 |
Family
ID=86056761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023555893A Pending JPWO2023073765A1 (https=) | 2021-10-25 | 2021-10-25 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230127781A1 (https=) |
| JP (1) | JPWO2023073765A1 (https=) |
| TW (1) | TWI838924B (https=) |
| WO (1) | WO2023073765A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022269890A1 (ja) * | 2021-06-25 | 2022-12-29 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置の製造方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000340679A (ja) * | 1999-05-10 | 2000-12-08 | Internatl Business Mach Corp <Ibm> | ボディ・コンタクト式ダイナミック・メモリ |
| JP2003086712A (ja) * | 2001-02-19 | 2003-03-20 | Toshiba Corp | 半導体メモリ装置及びその製造方法 |
| JP2003188279A (ja) * | 2001-12-14 | 2003-07-04 | Toshiba Corp | 半導体メモリ装置およびその製造方法 |
| US20070138524A1 (en) * | 2005-12-19 | 2007-06-21 | Samsung Electronics Co. Ltd. | Semiconductor memory device and methods thereof |
| JP2008147514A (ja) * | 2006-12-12 | 2008-06-26 | Renesas Technology Corp | 半導体記憶装置 |
| JP2009026448A (ja) * | 2007-07-20 | 2009-02-05 | Samsung Electronics Co Ltd | メモリセル構造、メモリセルアレイ、メモリ装置、メモリ制御器、メモリシステム及びこれらを動作する方法 |
| JP2010519770A (ja) * | 2007-02-26 | 2010-06-03 | マイクロン テクノロジー， インク． | パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法 |
| JP2012015517A (ja) * | 2010-07-02 | 2012-01-19 | Samsung Electronics Co Ltd | 垂直的に集積された不揮発性記憶セルサブストリングを含む不揮発性記憶装置の形成方法、及び形成された不揮発性記憶装置 |
| US20200135863A1 (en) * | 2015-04-29 | 2020-04-30 | Zeno Semiconductor, Inc. | MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101603731B1 (ko) * | 2009-09-29 | 2016-03-16 | 삼성전자주식회사 | 버티칼 낸드 전하 트랩 플래시 메모리 디바이스 및 제조방법 |
| TWI404956B (zh) * | 2010-09-20 | 2013-08-11 | Himax Display Inc | 液晶顯示面板的測試方法 |
| KR20150020847A (ko) * | 2013-08-19 | 2015-02-27 | 에스케이하이닉스 주식회사 | 3차원 반도체 장치, 이를 구비하는 저항 변화 메모리 장치, 및 그 제조방법 |
| US20230363138A1 (en) * | 2022-05-06 | 2023-11-09 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
-
2021
- 2021-10-25 WO PCT/JP2021/039319 patent/WO2023073765A1/ja not_active Ceased
- 2021-10-25 JP JP2023555893A patent/JPWO2023073765A1/ja active Pending
-
2022
- 2022-10-24 US US17/971,789 patent/US20230127781A1/en not_active Abandoned
- 2022-10-24 TW TW111140269A patent/TWI838924B/zh active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000340679A (ja) * | 1999-05-10 | 2000-12-08 | Internatl Business Mach Corp <Ibm> | ボディ・コンタクト式ダイナミック・メモリ |
| JP2003086712A (ja) * | 2001-02-19 | 2003-03-20 | Toshiba Corp | 半導体メモリ装置及びその製造方法 |
| JP2003188279A (ja) * | 2001-12-14 | 2003-07-04 | Toshiba Corp | 半導体メモリ装置およびその製造方法 |
| US20070138524A1 (en) * | 2005-12-19 | 2007-06-21 | Samsung Electronics Co. Ltd. | Semiconductor memory device and methods thereof |
| JP2008147514A (ja) * | 2006-12-12 | 2008-06-26 | Renesas Technology Corp | 半導体記憶装置 |
| JP2010519770A (ja) * | 2007-02-26 | 2010-06-03 | マイクロン テクノロジー， インク． | パストランジスタと、垂直読み出し／書き込み有効化トランジスタを含む、キャパシタレスフローティングボディ揮発性メモリセル、およびその製造法とプログラミング法 |
| JP2009026448A (ja) * | 2007-07-20 | 2009-02-05 | Samsung Electronics Co Ltd | メモリセル構造、メモリセルアレイ、メモリ装置、メモリ制御器、メモリシステム及びこれらを動作する方法 |
| JP2012015517A (ja) * | 2010-07-02 | 2012-01-19 | Samsung Electronics Co Ltd | 垂直的に集積された不揮発性記憶セルサブストリングを含む不揮発性記憶装置の形成方法、及び形成された不揮発性記憶装置 |
| US20200135863A1 (en) * | 2015-04-29 | 2020-04-30 | Zeno Semiconductor, Inc. | MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI838924B (zh) | 2024-04-11 |
| US20230127781A1 (en) | 2023-04-27 |
| WO2023073765A1 (ja) | 2023-05-04 |
| TW202333351A (zh) | 2023-08-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A5211 Effective date: 20240425 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240425 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250109 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20250630 |