TWI838381B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

Info

Publication number
TWI838381B
TWI838381B TW108121423A TW108121423A TWI838381B TW I838381 B TWI838381 B TW I838381B TW 108121423 A TW108121423 A TW 108121423A TW 108121423 A TW108121423 A TW 108121423A TW I838381 B TWI838381 B TW I838381B
Authority
TW
Taiwan
Prior art keywords
module
processing
substrate
cor
wafer
Prior art date
Application number
TW108121423A
Other languages
English (en)
Chinese (zh)
Other versions
TW202015135A (zh
Inventor
中込渉
向山達也
窪田茂
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202015135A publication Critical patent/TW202015135A/zh
Application granted granted Critical
Publication of TWI838381B publication Critical patent/TWI838381B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW108121423A 2018-07-04 2019-06-20 基板處理方法及基板處理裝置 TWI838381B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018127730A JP7137976B2 (ja) 2018-07-04 2018-07-04 基板処理方法及び基板処理装置
JP2018-127730 2018-07-04

Publications (2)

Publication Number Publication Date
TW202015135A TW202015135A (zh) 2020-04-16
TWI838381B true TWI838381B (zh) 2024-04-11

Family

ID=69059600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121423A TWI838381B (zh) 2018-07-04 2019-06-20 基板處理方法及基板處理裝置

Country Status (4)

Country Link
JP (1) JP7137976B2 (ko)
KR (1) KR102571843B1 (ko)
TW (1) TWI838381B (ko)
WO (1) WO2020008954A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7546427B2 (ja) 2020-09-24 2024-09-06 東京エレクトロン株式会社 搬送方法及び処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135517A (ja) * 2006-11-28 2008-06-12 Tokyo Electron Ltd 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体
JP2017092144A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2017126734A (ja) * 2016-01-13 2017-07-20 東京エレクトロン株式会社 基板処理方法、基板処理装置及び基板処理システム
JP2017147417A (ja) * 2016-02-19 2017-08-24 東京エレクトロン株式会社 基板処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP5538291B2 (ja) * 2011-04-13 2014-07-02 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135517A (ja) * 2006-11-28 2008-06-12 Tokyo Electron Ltd 基板処理装置の制御装置、制御方法および制御プログラムを記憶した記憶媒体
JP2017092144A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2017126734A (ja) * 2016-01-13 2017-07-20 東京エレクトロン株式会社 基板処理方法、基板処理装置及び基板処理システム
JP2017147417A (ja) * 2016-02-19 2017-08-24 東京エレクトロン株式会社 基板処理方法

Also Published As

Publication number Publication date
KR20210024108A (ko) 2021-03-04
KR102571843B1 (ko) 2023-08-28
JP7137976B2 (ja) 2022-09-15
WO2020008954A1 (ja) 2020-01-09
TW202015135A (zh) 2020-04-16
JP2020009835A (ja) 2020-01-16

Similar Documents

Publication Publication Date Title
JP6131320B2 (ja) 基板処理装置、プログラム及び半導体装置の製造方法
KR102463977B1 (ko) 웨이퍼들을 이송하기 위한 장비 프런트 엔드 모듈 및 웨이퍼들을 이송하는 방법
JP4397646B2 (ja) 基板処理装置および基板処理方法
TW201709392A (zh) 基板處理裝置、基板裝載方法及基板卸下方法
JPH1084029A (ja) 処理システム
JP6600588B2 (ja) 基板搬送機構の洗浄方法及び基板処理システム
TW201824428A (zh) 基板的連續處理裝置以及方法
JP4494523B2 (ja) インライン型ウェハ搬送装置および基板搬送方法
KR102567822B1 (ko) 기판 처리 장치 및 기판 처리 방법
TWI838381B (zh) 基板處理方法及基板處理裝置
CN106716617B (zh) 基板搬送方法和处理系统
KR100803562B1 (ko) 기판 처리 장치
JP2001250780A (ja) 半導体製造装置におけるダミー基板の運用方法
JP2006190968A (ja) 半導体素子製造装置
JP6027837B2 (ja) 基板処理装置及び半導体装置の製造方法
TW202117905A (zh) 搬送裝置及搬送方法
JP7175151B2 (ja) 搬送方法
JP2004080053A (ja) 半導体製造装置
TWI699848B (zh) 基板收納方法及基板處理裝置
JP2020145329A (ja) 基板収容装置
JP2009176807A (ja) 基板処理装置、及び基板処理方法
JP2005252105A (ja) 基板処理装置
JP2005197543A (ja) 基板処理装置
JP2023148823A (ja) 基板処理システム、制御装置および基板搬送処理方法
JP2002353284A (ja) 基板処理装置