TWI834241B - 記憶裝置 - Google Patents

記憶裝置 Download PDF

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Publication number
TWI834241B
TWI834241B TW111130066A TW111130066A TWI834241B TW I834241 B TWI834241 B TW I834241B TW 111130066 A TW111130066 A TW 111130066A TW 111130066 A TW111130066 A TW 111130066A TW I834241 B TWI834241 B TW I834241B
Authority
TW
Taiwan
Prior art keywords
electrode unit
area
region
memory device
unit
Prior art date
Application number
TW111130066A
Other languages
English (en)
Chinese (zh)
Other versions
TW202339225A (zh
Inventor
川西絢子
荒井伸也
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202339225A publication Critical patent/TW202339225A/zh
Application granted granted Critical
Publication of TWI834241B publication Critical patent/TWI834241B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B80/00—Assemblies of multiple devices comprising at least one memory device covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Non-Volatile Memory (AREA)
TW111130066A 2022-03-24 2022-08-10 記憶裝置 TWI834241B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-048021 2022-03-24
JP2022048021A JP7757223B2 (ja) 2022-03-24 2022-03-24 メモリデバイス

Publications (2)

Publication Number Publication Date
TW202339225A TW202339225A (zh) 2023-10-01
TWI834241B true TWI834241B (zh) 2024-03-01

Family

ID=88096429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111130066A TWI834241B (zh) 2022-03-24 2022-08-10 記憶裝置

Country Status (4)

Country Link
US (2) US12388031B2 (enExample)
JP (1) JP7757223B2 (enExample)
CN (1) CN116867274A (enExample)
TW (1) TWI834241B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240057523A (ko) * 2022-10-24 2024-05-03 삼성전자주식회사 반도체 패키지
KR20250047925A (ko) * 2023-09-25 2025-04-07 양쯔 메모리 테크놀로지스 씨오., 엘티디. 더미 패드를 갖는 반도체 디바이스 및 이를 형성하는 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201834221A (zh) * 2017-03-08 2018-09-16 大陸商長江存儲科技有限責任公司 三維記憶體元件的混和鍵合接觸結構
US20210013303A1 (en) * 2019-07-08 2021-01-14 Yangtze Memory Technologies Co., Ltd. Structure and method for forming capacitors for a three-dimensional nand

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11114171B2 (en) * 2017-11-08 2021-09-07 Samsung Electronics Co., Ltd. Non-volatile memory device
JP2019153675A (ja) 2018-03-02 2019-09-12 ルネサスエレクトロニクス株式会社 固体撮像装置およびその製造方法
KR102624170B1 (ko) * 2018-04-30 2024-01-12 삼성전자주식회사 3차원 반도체 메모리 장치
KR102480631B1 (ko) * 2018-10-01 2022-12-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP7273488B2 (ja) 2018-12-04 2023-05-15 ソニーセミコンダクタソリューションズ株式会社 半導体装置、及び電子機器
US10665607B1 (en) 2019-01-18 2020-05-26 Sandisk Technologies Llc Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same
KR102739662B1 (ko) * 2019-09-02 2024-12-10 삼성전자주식회사 3차원 반도체 메모리 소자
US11233043B2 (en) * 2019-09-02 2022-01-25 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device
JP2021068799A (ja) * 2019-10-23 2021-04-30 キオクシア株式会社 半導体記憶装置
JP2021136271A (ja) 2020-02-25 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法
JP2021136320A (ja) 2020-02-26 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法
JP2021150511A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
JP2022035158A (ja) 2020-08-20 2022-03-04 キオクシア株式会社 半導体記憶装置
JP2022050233A (ja) 2020-09-17 2022-03-30 キオクシア株式会社 半導体記憶装置
KR102942729B1 (ko) * 2021-05-21 2026-03-24 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
KR102953755B1 (ko) * 2021-11-29 2026-04-17 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
US20230255037A1 (en) * 2022-02-04 2023-08-10 Samsung Electronics Co., Ltd. Three-dimensional non-volatile memory device including peripheral circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201834221A (zh) * 2017-03-08 2018-09-16 大陸商長江存儲科技有限責任公司 三維記憶體元件的混和鍵合接觸結構
US20210013303A1 (en) * 2019-07-08 2021-01-14 Yangtze Memory Technologies Co., Ltd. Structure and method for forming capacitors for a three-dimensional nand

Also Published As

Publication number Publication date
US20250293181A1 (en) 2025-09-18
US20230307387A1 (en) 2023-09-28
US12388031B2 (en) 2025-08-12
TW202339225A (zh) 2023-10-01
CN116867274A (zh) 2023-10-10
JP2023141616A (ja) 2023-10-05
JP7757223B2 (ja) 2025-10-21

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