TWI833314B - 圖案校正方法及光掩模 - Google Patents
圖案校正方法及光掩模 Download PDFInfo
- Publication number
- TWI833314B TWI833314B TW111129341A TW111129341A TWI833314B TW I833314 B TWI833314 B TW I833314B TW 111129341 A TW111129341 A TW 111129341A TW 111129341 A TW111129341 A TW 111129341A TW I833314 B TWI833314 B TW I833314B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- film
- light
- shielding
- photomask
- Prior art date
Links
- 238000002715 modification method Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 287
- 238000012937 correction Methods 0.000 claims abstract description 243
- 238000000034 method Methods 0.000 claims abstract description 180
- 239000000463 material Substances 0.000 claims abstract description 117
- 238000005530 etching Methods 0.000 claims abstract description 103
- 239000012528 membrane Substances 0.000 claims abstract description 11
- 230000010363 phase shift Effects 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 62
- 230000007261 regionalization Effects 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 10
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 description 131
- 230000004048 modification Effects 0.000 description 131
- 238000010586 diagram Methods 0.000 description 60
- 230000000694 effects Effects 0.000 description 21
- 239000011651 chromium Substances 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- 238000011161 development Methods 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910016006 MoSi Inorganic materials 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-128462 | 2021-08-04 | ||
| JP2021-128463 | 2021-08-04 | ||
| JP2021128462A JP7489358B2 (ja) | 2021-08-04 | 2021-08-04 | パターン修正方法 |
| JP2021128463A JP7489359B2 (ja) | 2021-08-04 | 2021-08-04 | パターン修正方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202314379A TW202314379A (zh) | 2023-04-01 |
| TWI833314B true TWI833314B (zh) | 2024-02-21 |
Family
ID=85180751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111129341A TWI833314B (zh) | 2021-08-04 | 2022-08-04 | 圖案校正方法及光掩模 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20230020920A (ko) |
| CN (1) | CN115704993A (ko) |
| TW (1) | TWI833314B (ko) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5066449A (ko) * | 1973-10-17 | 1975-06-04 | ||
| JPH0675362A (ja) * | 1992-08-28 | 1994-03-18 | Mitsubishi Electric Corp | 位相シフトマスクのピンホール欠陥修正方法 |
| TW201704842A (zh) * | 2015-02-23 | 2017-02-01 | Ｈｏｙａ股份有限公司 | 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法 |
| CN113009777A (zh) * | 2016-05-18 | 2021-06-22 | Hoya株式会社 | 光掩模及显示装置的制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2697026B2 (ja) | 1988-11-22 | 1998-01-14 | 日本電気株式会社 | フォトマスクの欠損欠陥修正方法 |
-
2022
- 2022-08-01 CN CN202210917102.4A patent/CN115704993A/zh active Pending
- 2022-08-02 KR KR1020220095988A patent/KR20230020920A/ko unknown
- 2022-08-04 TW TW111129341A patent/TWI833314B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5066449A (ko) * | 1973-10-17 | 1975-06-04 | ||
| JPH0675362A (ja) * | 1992-08-28 | 1994-03-18 | Mitsubishi Electric Corp | 位相シフトマスクのピンホール欠陥修正方法 |
| TW201704842A (zh) * | 2015-02-23 | 2017-02-01 | Ｈｏｙａ股份有限公司 | 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法 |
| CN113009777A (zh) * | 2016-05-18 | 2021-06-22 | Hoya株式会社 | 光掩模及显示装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202314379A (zh) | 2023-04-01 |
| CN115704993A (zh) | 2023-02-17 |
| KR20230020920A (ko) | 2023-02-13 |
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