TWI820302B - 濺鍍製程及濺鍍放置站 - Google Patents

濺鍍製程及濺鍍放置站 Download PDF

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TWI820302B
TWI820302B TW109105347A TW109105347A TWI820302B TW I820302 B TWI820302 B TW I820302B TW 109105347 A TW109105347 A TW 109105347A TW 109105347 A TW109105347 A TW 109105347A TW I820302 B TWI820302 B TW I820302B
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tape
retaining ring
adhesive layer
array
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TW202045755A (zh
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丁鍾才
申允錫
张德春
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新加坡商洛克系统私人有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices

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  • Chemical & Material Sciences (AREA)
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  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

本發明提供一種用於濺鍍複數IC單元的製程，該製程包含下列步驟：對 一保持環施加一層；在該層中切割一孔徑陣列；將該保持環轉移到定位於一放置站內的一樣板；將前述孔徑陣列與前述樣板中的一凹部陣列對位；將IC單元輸送到前述保持環，每個IC單元皆對應於一對位的孔徑和凹部，然後；對與前述保持環接合的前述IC單元施加一濺鍍製程。

Description

濺鍍製程及濺鍍放置站
本發明係關於積體電路(Integrated circuit，IC)單元之製程，尤其係關於可輔助球柵陣列(Ball grid array，BGA)IC單元之濺鍍的方法及裝置。
濺鍍以將材料之薄膜沉積於IC單元上係施加熔點很高的材料之有效方法。因此，考慮到濺鍍對要施加的該等材料而言的靈活性，濺鍍已變得廣為使用。
通常，將IC單元之陣列放置於基板上，並通過濺鍍腔室以承接該薄材料層。
這麼做時，該等IC單元受到用雙面膠帶黏著結合到環的模板(stencil)支撐。該雙面膠帶為雷射所切割，其中該等IC單元裝配於透過前述雷射切割形成的孔徑內。然後，將帶有該等IC單元的模板卸載，並送去進行濺鍍。其後，將該等單元從該系統中彈出並卸載。
然而，使用模板不經濟，因為製造昂貴且在該濺鍍步驟後難以回收。所以，一些先前技術系統省略該模板，將該等IC單元直接放置於該膠帶上。使用膠帶而無模板支撐的困難在於，該膠帶之彈性往往無法對位該等單元，以及在運輸過程中缺乏充分支撐。
在第一態樣中，本發明提供一種用於濺鍍複數IC單元的製程，該製程包含下列步驟：對一保持環施加一層；在該層中切割一孔徑陣列；將該保持環轉移到定位於一濺鍍站內的一樣板(template)；將前述孔徑陣列與前述樣板中的一凹部陣列對位；將IC單元輸送到前述保持環，每個IC單元皆對應於一對位的孔徑和凹部，然後；對與前述保持環接合的前述IC單元施加一濺鍍製程。
在第二態樣中，本發明提供一種放置站包含：一樣板，其具有一凹部陣列；前述樣板，其設置成承接具有一孔徑陣列的一保持環；前述孔徑和凹部，其對位設置以便承接用於濺鍍的複數IC單元。
因此，憑藉本發明提供安裝或整體定位於該濺鍍台內的樣板，在濺鍍過程中維持針對該等IC單元的結構性支撐，從而避免製造單次使用模板之附加成本。
該等IC單元可能與結合到保持環的層接合，並在前述層上的同時進行濺鍍。
10:保持環；環
15:雙面濺鍍膠帶；濺鍍膠帶；膠帶
17:周緣部分
20:次膠帶
22:背襯膠帶
25:孔徑陣列；雷射所切割之孔徑；孔徑
30:放置站
35:放置台
40:樣板
45:凹部陣列；樣板凹部；凹部
50:積體電路(IC)單元；單元；球柵陣列(BGA)晶片；晶片
55:雷射切割製程；焊球連接
60:雷射切割器
關於例示本發明之可能設置的所附圖式進一步說明本發明應很便利。本發明可能有其他設置，所以，所附圖式之特殊性不應理解為取代前述本發明之說明之一般性。
第一A圖和第一B圖係依據本發明之一個具體實施例對保持環施加層之順序視圖；第二A圖和第二B圖係依據本發明之又一具體實施例的雷射切割製程之順序視圖； 第三圖和第四圖係依據本發明之又一具體實施例對樣板施加保持環之順序視圖，及；第五圖係依據本發明之又一具體實施例定位於對位的雷射切割層之孔徑和樣板之凹部內的單元之立面視圖。
因此，本發明提供具有對應於IC單元的孔徑陣列的可重複使用樣板。該製程始於該等單元進行檢測、翻轉、對位及定向。該檢測、對位及定向步驟包括執行一頂部視覺檢測，然後將該等單元移動到一翻轉器及其後一撿出器(picker)以供對位該等單元。透過使該樣板固定到該濺鍍台，將IC單元直接輸送到該濺鍍台，以定位於結合到保持環(其進而放置於該樣板上)的雷射所切割之膠帶上。在該濺鍍製程後，將該等單元先彈出、對位並進一步檢測再卸載。
第一A圖和第一B圖顯示在雷射切割該等孔徑之前製備保持環10。環10承接覆蓋環10中的空隙的雙面濺鍍膠帶15。濺鍍膠帶15可能係施加於該保持環的黏著層。然後，將下部層(例如次膠帶20)附接於膠帶15下面，以便覆蓋濺鍍膠帶15之任何黏著背襯。由於該先前技術之模板貼附到濺鍍膠帶15，因此隨後覆蓋未切割的該等黏著區域。然而，考慮到將該模板從該製程中移除，因此將下部層(例如次膠帶20)用作這種黏著部分的覆蓋物。
應可瞭解，也可能使用具有足以黏到保持環10的周緣黏著部位的層，使得無需次膠帶20。需要如第一A圖中所示之周緣部分17，才能黏到環10。然而，在此不同的具體實施例中，該周緣黏著層無需進一步的黏著品質。
第二A圖和第二B圖對應於雷射切割製程55，憑此雷射切割器60在濺鍍膠帶15和次膠帶20中切割孔徑，以形成用於承接該等IC單元的孔徑陣列25。 一旦將孔徑陣列25切割到該膠帶中，即移除雙面濺鍍膠帶15之背襯膠帶22，從而準備好承接該等IC單元。
第三圖和第四圖顯示涉及放置站30的製程中的下一個步驟。將在該濺鍍膠帶和次膠帶中具有該等雷射所切割之孔徑25的環10下降到放置台35上。在此具體實施例中，放置台35包括一樣板40，其具有對應於該濺鍍膠帶中的該等雷射所切割之孔徑25的凹部陣列45，其在保持環10下降到該樣板上時對位。因此，樣板40在該放置製程中取代該模板，而在濺鍍前或後無需個別模板。因此，用樣板40取代該模板的成本節省顯著，因為與其後丟棄的模板相比，樣板40可重複用於每個放置製程。
第五圖顯示環10就定位於樣板40上方，其中該等IC單元50放置於該等樣板凹部45上方的濺鍍膠帶15上，因此如先前所說明對位該等孔徑25。該等單元50透過撿出器接合以將該等單元移動到該樣板，並透過該撿出器在輸送過程中檢測該等單元之底面。在這種情況下，該等IC單元係定位於濺鍍膠帶15(其裝配於樣板40上方)之黏著表面上的BGA晶片。BGA晶片50包括焊球連接55，其環繞裝配於透過對位該等凹部45和孔徑25形成的空隙內的晶片50。
10:保持環；環
25:孔徑陣列；雷射所切割之孔徑；孔徑
30:放置站
35:放置台
40:樣板
45:凹部陣列；樣板凹部；凹部

Claims (11)

  1. 一種用於濺鍍複數IC單元的製程，該製程包含下列步驟：對一放置站的一保持環施加一黏著層及一次膠帶，並且該次膠帶附接於該黏著層下面；在該黏著層及該次膠帶中切割一孔徑陣列；將該保持環轉移到定位於該放置站內的一樣板(template)；將前述孔徑陣列與前述樣板中的一凹部陣列對位；將IC單元輸送到前述保持環，每個IC單元皆對應於一對位的孔徑和凹部；及對與前述保持環接合的前述IC單元施加一濺鍍製程。
  2. 如請求項1之製程，其中該切割步驟包含雷射切割。
  3. 如請求項2之製程，其中該輸送步驟包括將該等IC單元與一撿出器(picker)接合並將其脫離以轉移到該保持環。
  4. 如請求項3之製程，其中該黏著層係一雙面膠帶。
  5. 如請求項4之製程，其中該切割步驟包括切割該雙面膠帶，然後剝離一背襯膠帶以暴露一黏著表面，並移除該雙面膠帶之該等切割部位。
  6. 如請求項1之製程，其中該輸送步驟包括將該等IC單元與一撿出器(picker)接合並將其脫離以轉移到該保持環。
  7. 如請求項1之製程，其中該黏著層係一雙面膠帶。
  8. 一種放置站包含：一樣板，其具有一凹部陣列；及一保持環，係設置以被容置在該樣板上，該保持環具有一黏著層及一次膠帶，該黏著層及該次膠帶皆具有一孔徑陣列，該次膠帶被附接於該黏著層下面； 其中該孔徑陣列與該凹部陣列係對位設置，以便承接用於濺鍍的複數IC單元。
  9. 如請求項8之放置站，其中該等IC單元係球柵陣列(BGA)晶片，前述孔徑大小經過調整以使該等BGA晶片之焊球連接能夠通過該孔徑，但留存該BGA晶片之IC部位。
  10. 如請求項9之放置站，其中該黏著層係一雙面膠帶。
  11. 如請求項10之放置站，其中該黏著層更具有足以黏到該保持環的周緣黏著部位。
TW109105347A 2019-03-04 2020-02-19 濺鍍製程及濺鍍放置站 TWI820302B (zh)

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SG10201901908XA SG10201901908XA (en) 2019-03-04 2019-03-04 Improved sputtering processing and apparatus
SG10201901908X 2019-03-04

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CN108475650A (zh) * 2015-12-04 2018-08-31 洛克系统私人有限公司 改善的基底加工和装置
TW201803041A (zh) * 2016-05-11 2018-01-16 宰體有限公司 半導體裝置載體、製造半導體裝置載體的方法及具有該載體的半導體裝置處理器

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