TWI816990B - 用於處理腔室的多孔噴頭 - Google Patents

用於處理腔室的多孔噴頭 Download PDF

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Publication number
TWI816990B
TWI816990B TW109107436A TW109107436A TWI816990B TW I816990 B TWI816990 B TW I816990B TW 109107436 A TW109107436 A TW 109107436A TW 109107436 A TW109107436 A TW 109107436A TW I816990 B TWI816990 B TW I816990B
Authority
TW
Taiwan
Prior art keywords
porous plate
processing chamber
holes
plate
support
Prior art date
Application number
TW109107436A
Other languages
English (en)
Chinese (zh)
Other versions
TW202039090A (zh
Inventor
蘇密特 阿加瓦爾
查德 彼得森
馬克 舒爾
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202039090A publication Critical patent/TW202039090A/zh
Application granted granted Critical
Publication of TWI816990B publication Critical patent/TWI816990B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • External Artificial Organs (AREA)
TW109107436A 2019-03-08 2020-03-06 用於處理腔室的多孔噴頭 TWI816990B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962815581P 2019-03-08 2019-03-08
US62/815,581 2019-03-08

Publications (2)

Publication Number Publication Date
TW202039090A TW202039090A (zh) 2020-11-01
TWI816990B true TWI816990B (zh) 2023-10-01

Family

ID=72336172

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109107436A TWI816990B (zh) 2019-03-08 2020-03-06 用於處理腔室的多孔噴頭

Country Status (7)

Country Link
US (1) US11111582B2 (https=)
JP (1) JP7680361B2 (https=)
KR (1) KR102849949B1 (https=)
CN (1) CN113490765A (https=)
SG (1) SG11202108196QA (https=)
TW (1) TWI816990B (https=)
WO (1) WO2020185360A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024191656A1 (en) * 2023-03-15 2024-09-19 Silfex, Inc. Porous showerheads for substrate processing systems

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020195202A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co., Ltd Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
TW200605210A (en) * 2004-06-17 2006-02-01 Tokyo Electron Ltd Method and processing system for controlling a chamber cleaning process
CN208098420U (zh) * 2018-02-11 2018-11-16 佛山华派机械科技有限公司 一种板状叠加式多孔喷头

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KR950020993A (ko) 1993-12-22 1995-07-26 김광호 반도체 제조장치
JPH0878192A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH1027784A (ja) * 1996-05-08 1998-01-27 Tokyo Electron Ltd 減圧処理装置
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2003282462A (ja) 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
JP2004356124A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 多孔質セラミックスを用いた半導体製造装置用部品及び半導体製造装置
JP2004352513A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 窒化アルミニウム多孔質体を用いた半導体製造装置用部品及び半導体製造装置
JP4312063B2 (ja) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 薄膜製造装置及びその方法
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2008205219A (ja) * 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
KR101249999B1 (ko) * 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
US8911553B2 (en) 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
US9827326B2 (en) * 2010-12-23 2017-11-28 Nektar Therapeutics Polymer-sunitinib conjugates
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US20170114462A1 (en) * 2015-10-26 2017-04-27 Applied Materials, Inc. High productivity pecvd tool for wafer processing of semiconductor manufacturing
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020195202A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co., Ltd Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
US7138034B2 (en) * 2001-06-25 2006-11-21 Matsushita Electric Industrial Co., Ltd. Electrode member used in a plasma treating apparatus
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
TW200605210A (en) * 2004-06-17 2006-02-01 Tokyo Electron Ltd Method and processing system for controlling a chamber cleaning process
CN208098420U (zh) * 2018-02-11 2018-11-16 佛山华派机械科技有限公司 一种板状叠加式多孔喷头

Also Published As

Publication number Publication date
JP2022523541A (ja) 2022-04-25
US20200283900A1 (en) 2020-09-10
JP7680361B2 (ja) 2025-05-20
SG11202108196QA (en) 2021-09-29
TW202039090A (zh) 2020-11-01
WO2020185360A1 (en) 2020-09-17
CN113490765A (zh) 2021-10-08
US11111582B2 (en) 2021-09-07
KR102849949B1 (ko) 2025-08-22
KR20210126130A (ko) 2021-10-19

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