CN113490765A - 用于处理腔室的多孔喷头 - Google Patents

用于处理腔室的多孔喷头 Download PDF

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Publication number
CN113490765A
CN113490765A CN202080016998.8A CN202080016998A CN113490765A CN 113490765 A CN113490765 A CN 113490765A CN 202080016998 A CN202080016998 A CN 202080016998A CN 113490765 A CN113490765 A CN 113490765A
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CN
China
Prior art keywords
plate
processing chamber
showerhead assembly
support
perforated plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080016998.8A
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English (en)
Chinese (zh)
Inventor
S·阿加瓦尔
C·彼德森
M·舒尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN113490765A publication Critical patent/CN113490765A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • External Artificial Organs (AREA)
CN202080016998.8A 2019-03-08 2020-02-18 用于处理腔室的多孔喷头 Pending CN113490765A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962815581P 2019-03-08 2019-03-08
US62/815,581 2019-03-08
PCT/US2020/018679 WO2020185360A1 (en) 2019-03-08 2020-02-18 Porous showerhead for a processing chamber

Publications (1)

Publication Number Publication Date
CN113490765A true CN113490765A (zh) 2021-10-08

Family

ID=72336172

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080016998.8A Pending CN113490765A (zh) 2019-03-08 2020-02-18 用于处理腔室的多孔喷头

Country Status (7)

Country Link
US (1) US11111582B2 (https=)
JP (1) JP7680361B2 (https=)
KR (1) KR102849949B1 (https=)
CN (1) CN113490765A (https=)
SG (1) SG11202108196QA (https=)
TW (1) TWI816990B (https=)
WO (1) WO2020185360A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024191656A1 (en) * 2023-03-15 2024-09-19 Silfex, Inc. Porous showerheads for substrate processing systems

Citations (12)

* Cited by examiner, † Cited by third party
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JPH0878192A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH1027784A (ja) * 1996-05-08 1998-01-27 Tokyo Electron Ltd 減圧処理装置
JP2004352513A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 窒化アルミニウム多孔質体を用いた半導体製造装置用部品及び半導体製造装置
JP2004356124A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 多孔質セラミックスを用いた半導体製造装置用部品及び半導体製造装置
US20080196666A1 (en) * 2007-02-20 2008-08-21 Masato Toshima Shower head and cvd apparatus using the same
CN101255552A (zh) * 2007-02-27 2008-09-03 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
CN102373440A (zh) * 2010-08-12 2012-03-14 Snt能源技术有限公司 化学气相沉积装置
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
CN102834545A (zh) * 2010-02-25 2012-12-19 荷兰应用自然科学研究组织Tno 用于层沉积的方法及装置
CN106167895A (zh) * 2015-05-22 2016-11-30 朗姆研究公司 用于改善流动均匀性的具有面板孔的低体积喷头
CN108140551A (zh) * 2015-10-26 2018-06-08 应用材料公司 用于半导体制造的晶片处理的高生产率pecvd工具
CN108330467A (zh) * 2017-01-20 2018-07-27 应用材料公司 通过原子层沉积获得的多层抗等离子体涂层

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KR950020993A (ko) 1993-12-22 1995-07-26 김광호 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2003007682A (ja) 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
JP2003282462A (ja) 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
JP4312063B2 (ja) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 薄膜製造装置及びその方法
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8911553B2 (en) 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
US9827326B2 (en) * 2010-12-23 2017-11-28 Nektar Therapeutics Polymer-sunitinib conjugates
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
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Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878192A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH1027784A (ja) * 1996-05-08 1998-01-27 Tokyo Electron Ltd 減圧処理装置
JP2004352513A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 窒化アルミニウム多孔質体を用いた半導体製造装置用部品及び半導体製造装置
JP2004356124A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 多孔質セラミックスを用いた半導体製造装置用部品及び半導体製造装置
US20080196666A1 (en) * 2007-02-20 2008-08-21 Masato Toshima Shower head and cvd apparatus using the same
CN101255552A (zh) * 2007-02-27 2008-09-03 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
CN102834545A (zh) * 2010-02-25 2012-12-19 荷兰应用自然科学研究组织Tno 用于层沉积的方法及装置
CN102373440A (zh) * 2010-08-12 2012-03-14 Snt能源技术有限公司 化学气相沉积装置
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
CN106167895A (zh) * 2015-05-22 2016-11-30 朗姆研究公司 用于改善流动均匀性的具有面板孔的低体积喷头
CN108140551A (zh) * 2015-10-26 2018-06-08 应用材料公司 用于半导体制造的晶片处理的高生产率pecvd工具
CN108330467A (zh) * 2017-01-20 2018-07-27 应用材料公司 通过原子层沉积获得的多层抗等离子体涂层

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Title
林彬荫等: "耐火材料原料", 31 October 2015, 冶金工业出版社, pages: 56 - 57 *

Also Published As

Publication number Publication date
JP2022523541A (ja) 2022-04-25
US20200283900A1 (en) 2020-09-10
JP7680361B2 (ja) 2025-05-20
TWI816990B (zh) 2023-10-01
SG11202108196QA (en) 2021-09-29
TW202039090A (zh) 2020-11-01
WO2020185360A1 (en) 2020-09-17
US11111582B2 (en) 2021-09-07
KR102849949B1 (ko) 2025-08-22
KR20210126130A (ko) 2021-10-19

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