SG11202108196QA - Porous showerhead for a processing chamber - Google Patents
Porous showerhead for a processing chamberInfo
- Publication number
- SG11202108196QA SG11202108196QA SG11202108196QA SG11202108196QA SG11202108196QA SG 11202108196Q A SG11202108196Q A SG 11202108196QA SG 11202108196Q A SG11202108196Q A SG 11202108196QA SG 11202108196Q A SG11202108196Q A SG 11202108196QA SG 11202108196Q A SG11202108196Q A SG 11202108196QA
- Authority
- SG
- Singapore
- Prior art keywords
- processing chamber
- showerhead
- porous
- porous showerhead
- chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- External Artificial Organs (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962815581P | 2019-03-08 | 2019-03-08 | |
PCT/US2020/018679 WO2020185360A1 (en) | 2019-03-08 | 2020-02-18 | Porous showerhead for a processing chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202108196QA true SG11202108196QA (en) | 2021-09-29 |
Family
ID=72336172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202108196QA SG11202108196QA (en) | 2019-03-08 | 2020-02-18 | Porous showerhead for a processing chamber |
Country Status (7)
Country | Link |
---|---|
US (1) | US11111582B2 (en) |
JP (1) | JP2022523541A (en) |
KR (1) | KR20210126130A (en) |
CN (1) | CN113490765A (en) |
SG (1) | SG11202108196QA (en) |
TW (1) | TWI816990B (en) |
WO (1) | WO2020185360A1 (en) |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950020993A (en) | 1993-12-22 | 1995-07-26 | 김광호 | Semiconductor manufacturing device |
JPH1027784A (en) * | 1996-05-08 | 1998-01-27 | Tokyo Electron Ltd | Apparatus for low-pressure processing |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
JP2003007682A (en) * | 2001-06-25 | 2003-01-10 | Matsushita Electric Ind Co Ltd | Electrode member for plasma treatment apparatus |
US20050081788A1 (en) * | 2002-03-15 | 2005-04-21 | Holger Jurgensen | Device for depositing thin layers on a substrate |
JP4312063B2 (en) * | 2004-01-21 | 2009-08-12 | 日本エー・エス・エム株式会社 | Thin film manufacturing apparatus and method |
US20050279384A1 (en) * | 2004-06-17 | 2005-12-22 | Guidotti Emmanuel P | Method and processing system for controlling a chamber cleaning process |
JP5010234B2 (en) * | 2006-10-23 | 2012-08-29 | 北陸成型工業株式会社 | Shower plate in which gas discharge hole member is integrally sintered and manufacturing method thereof |
JP2008205219A (en) * | 2007-02-20 | 2008-09-04 | Masato Toshima | Showerhead, and cvd apparatus using the same showerhead |
CN100577866C (en) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
US20090226614A1 (en) * | 2008-03-04 | 2009-09-10 | Tokyo Electron Limited | Porous gas heating device for a vapor deposition system |
EP2362001A1 (en) * | 2010-02-25 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and device for layer deposition |
KR101249999B1 (en) * | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | Apparatus for chemical vapor deposition |
WO2012054206A2 (en) | 2010-10-19 | 2012-04-26 | Applied Materials, Inc. | Quartz showerhead for nanocure uv chamber |
EP2654799B1 (en) * | 2010-12-23 | 2017-11-08 | Nektar Therapeutics | Polymer-sunitinib conjugates |
US20120312234A1 (en) * | 2011-06-11 | 2012-12-13 | Tokyo Electron Limited | Process gas diffuser assembly for vapor deposition system |
US9449795B2 (en) | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US10378107B2 (en) * | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
KR20180063345A (en) * | 2015-10-26 | 2018-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | High productivity PECVD tool for wafer processing of semiconductor manufacturing |
CN208098420U (en) * | 2018-02-11 | 2018-11-16 | 佛山华派机械科技有限公司 | A kind of plate superposing type porous nozzle |
-
2020
- 2020-02-18 JP JP2021551898A patent/JP2022523541A/en active Pending
- 2020-02-18 SG SG11202108196QA patent/SG11202108196QA/en unknown
- 2020-02-18 KR KR1020217030971A patent/KR20210126130A/en active Search and Examination
- 2020-02-18 WO PCT/US2020/018679 patent/WO2020185360A1/en active Application Filing
- 2020-02-18 CN CN202080016998.8A patent/CN113490765A/en active Pending
- 2020-03-03 US US16/808,046 patent/US11111582B2/en active Active
- 2020-03-06 TW TW109107436A patent/TWI816990B/en active
Also Published As
Publication number | Publication date |
---|---|
TW202039090A (en) | 2020-11-01 |
WO2020185360A1 (en) | 2020-09-17 |
JP2022523541A (en) | 2022-04-25 |
KR20210126130A (en) | 2021-10-19 |
TWI816990B (en) | 2023-10-01 |
CN113490765A (en) | 2021-10-08 |
US11111582B2 (en) | 2021-09-07 |
US20200283900A1 (en) | 2020-09-10 |
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