KR102849949B1 - 프로세싱 챔버를 위한 다공성 샤워헤드 - Google Patents

프로세싱 챔버를 위한 다공성 샤워헤드

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Publication number
KR102849949B1
KR102849949B1 KR1020217030971A KR20217030971A KR102849949B1 KR 102849949 B1 KR102849949 B1 KR 102849949B1 KR 1020217030971 A KR1020217030971 A KR 1020217030971A KR 20217030971 A KR20217030971 A KR 20217030971A KR 102849949 B1 KR102849949 B1 KR 102849949B1
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KR
South Korea
Prior art keywords
porous plate
processing chamber
pores
showerhead assembly
paragraph
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217030971A
Other languages
English (en)
Korean (ko)
Other versions
KR20210126130A (ko
Inventor
서밋 아가르왈
채드 피터슨
마크 슐
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210126130A publication Critical patent/KR20210126130A/ko
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Publication of KR102849949B1 publication Critical patent/KR102849949B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • External Artificial Organs (AREA)
KR1020217030971A 2019-03-08 2020-02-18 프로세싱 챔버를 위한 다공성 샤워헤드 Active KR102849949B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962815581P 2019-03-08 2019-03-08
US62/815,581 2019-03-08
PCT/US2020/018679 WO2020185360A1 (en) 2019-03-08 2020-02-18 Porous showerhead for a processing chamber

Publications (2)

Publication Number Publication Date
KR20210126130A KR20210126130A (ko) 2021-10-19
KR102849949B1 true KR102849949B1 (ko) 2025-08-22

Family

ID=72336172

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217030971A Active KR102849949B1 (ko) 2019-03-08 2020-02-18 프로세싱 챔버를 위한 다공성 샤워헤드

Country Status (7)

Country Link
US (1) US11111582B2 (https=)
JP (1) JP7680361B2 (https=)
KR (1) KR102849949B1 (https=)
CN (1) CN113490765A (https=)
SG (1) SG11202108196QA (https=)
TW (1) TWI816990B (https=)
WO (1) WO2020185360A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024191656A1 (en) * 2023-03-15 2024-09-19 Silfex, Inc. Porous showerheads for substrate processing systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004352513A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 窒化アルミニウム多孔質体を用いた半導体製造装置用部品及び半導体製造装置
JP2004356124A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 多孔質セラミックスを用いた半導体製造装置用部品及び半導体製造装置

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KR950020993A (ko) 1993-12-22 1995-07-26 김광호 반도체 제조장치
JPH0878192A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH1027784A (ja) * 1996-05-08 1998-01-27 Tokyo Electron Ltd 減圧処理装置
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2003007682A (ja) 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
JP2003282462A (ja) 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
JP4312063B2 (ja) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 薄膜製造装置及びその方法
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2008205219A (ja) * 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
KR101249999B1 (ko) * 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
US8911553B2 (en) 2010-10-19 2014-12-16 Applied Materials, Inc. Quartz showerhead for nanocure UV chamber
US9827326B2 (en) * 2010-12-23 2017-11-28 Nektar Therapeutics Polymer-sunitinib conjugates
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US20170114462A1 (en) * 2015-10-26 2017-04-27 Applied Materials, Inc. High productivity pecvd tool for wafer processing of semiconductor manufacturing
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
CN208098420U (zh) * 2018-02-11 2018-11-16 佛山华派机械科技有限公司 一种板状叠加式多孔喷头

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004352513A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 窒化アルミニウム多孔質体を用いた半導体製造装置用部品及び半導体製造装置
JP2004356124A (ja) * 2003-05-27 2004-12-16 Sumitomo Electric Ind Ltd 多孔質セラミックスを用いた半導体製造装置用部品及び半導体製造装置

Also Published As

Publication number Publication date
JP2022523541A (ja) 2022-04-25
US20200283900A1 (en) 2020-09-10
JP7680361B2 (ja) 2025-05-20
TWI816990B (zh) 2023-10-01
SG11202108196QA (en) 2021-09-29
TW202039090A (zh) 2020-11-01
WO2020185360A1 (en) 2020-09-17
CN113490765A (zh) 2021-10-08
US11111582B2 (en) 2021-09-07
KR20210126130A (ko) 2021-10-19

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