TWI810227B - 用於邊緣環耗損補償的系統和方法 - Google Patents

用於邊緣環耗損補償的系統和方法 Download PDF

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Publication number
TWI810227B
TWI810227B TW107143382A TW107143382A TWI810227B TW I810227 B TWI810227 B TW I810227B TW 107143382 A TW107143382 A TW 107143382A TW 107143382 A TW107143382 A TW 107143382A TW I810227 B TWI810227 B TW I810227B
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TW
Taiwan
Prior art keywords
edge ring
erosion
substrate processing
processing system
height
Prior art date
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TW107143382A
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English (en)
Chinese (zh)
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TW201935593A (zh
Inventor
湯姆 A 坎伯
卡洛斯 李爾韋爾杜戈
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美商蘭姆研究公司
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Publication of TW201935593A publication Critical patent/TW201935593A/zh
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Publication of TWI810227B publication Critical patent/TWI810227B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32926Software, data control or modelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612Production flow monitoring, e.g. for increasing throughput
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616Monitoring of warpages, curvatures, damages, defects or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Valve-Gear Or Valve Arrangements (AREA)
TW107143382A 2017-12-05 2018-12-04 用於邊緣環耗損補償的系統和方法 TWI810227B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762594861P 2017-12-05 2017-12-05
US62/594,861 2017-12-05

Publications (2)

Publication Number Publication Date
TW201935593A TW201935593A (zh) 2019-09-01
TWI810227B true TWI810227B (zh) 2023-08-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW107143382A TWI810227B (zh) 2017-12-05 2018-12-04 用於邊緣環耗損補償的系統和方法
TW112124253A TWI863390B (zh) 2017-12-05 2018-12-04 用於邊緣環耗損補償的使用者介面和處理器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112124253A TWI863390B (zh) 2017-12-05 2018-12-04 用於邊緣環耗損補償的使用者介面和處理器

Country Status (6)

Country Link
US (3) US11538713B2 (https=)
JP (2) JP7323525B2 (https=)
KR (2) KR102916791B1 (https=)
CN (2) CN120221492A (https=)
TW (2) TWI810227B (https=)
WO (1) WO2019112903A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
US12215966B2 (en) * 2019-12-06 2025-02-04 Applied Materials, Inc. Methods and systems of optical inspection of electronic device manufacturing machines
KR102822822B1 (ko) * 2020-02-25 2025-06-19 에스케이하이닉스 주식회사 에지링 모니터링 장치, 에지링 관리 시스템 및 방법
US11804368B2 (en) * 2020-03-02 2023-10-31 Tokyo Electron Limited Cleaning method and plasma processing apparatus
KR102905595B1 (ko) * 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
TWI861079B (zh) * 2020-03-25 2024-11-11 美商蘭姆研究公司 基板處理系統及其方法
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
WO2022076227A1 (en) 2020-10-05 2022-04-14 Lam Research Corporation Moveable edge rings for plasma processing systems
KR102585286B1 (ko) * 2020-10-15 2023-10-05 세메스 주식회사 기판 처리 장치 및 소모성 부품의 마모도 측정 방법
KR102762970B1 (ko) 2020-12-23 2025-02-07 삼성전자주식회사 기판 처리 장치 모니터링 방법 및 시스템
KR20240161340A (ko) * 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치
TWI858758B (zh) * 2023-06-06 2024-10-11 郭光哲 微加熱及感測裝置之製造方法及其結構

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110235056A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for measuring wear rate
TW201237923A (en) * 2010-12-07 2012-09-16 Lam Res Corp Plasma processing system control based on RF voltage
US20150168130A1 (en) * 2013-12-16 2015-06-18 Tokyo Electron Limited Wear amount measuring apparatus and method, temperature measuring apparatus and method and substrate processing system
US20160216185A1 (en) * 2015-01-28 2016-07-28 Lam Research Corporation Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber
US20170053819A1 (en) * 2015-08-21 2017-02-23 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3004621B2 (ja) 1997-01-24 2000-01-31 アプライド マテリアルズ インコーポレイテッド 高温、高堆積率で膜を堆積する方法及び装置
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
JP2001230239A (ja) * 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
JP2002243787A (ja) * 2001-02-19 2002-08-28 Hitachi Engineering & Services Co Ltd 絶縁監視装置
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
JP4707421B2 (ja) * 2005-03-14 2011-06-22 東京エレクトロン株式会社 処理装置,処理装置の消耗部品管理方法,処理システム,処理システムの消耗部品管理方法
US7750488B2 (en) * 2006-07-10 2010-07-06 Tezzaron Semiconductor, Inc. Method for bonding wafers to produce stacked integrated circuits
JP5105399B2 (ja) * 2006-08-08 2012-12-26 東京エレクトロン株式会社 データ収集方法,基板処理装置,基板処理システム
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
JP2009180722A (ja) 2008-01-30 2009-08-13 Takayoshi Yamamoto 対象設備の最適保全時期決定の支援方法、コンピュータプログラム、及び、対象設備の最適保全時期決定のための支援装置
US10283331B2 (en) * 2013-09-17 2019-05-07 Applied Materials, Inc. PVD plasma control using a magnet edge lift mechanism
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US11605546B2 (en) * 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10985078B2 (en) * 2015-11-06 2021-04-20 Lam Research Corporation Sensor and adjuster for a consumable
US10043636B2 (en) * 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10032681B2 (en) 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11008655B2 (en) * 2016-03-03 2021-05-18 Lam Research Corporation Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems
US10340171B2 (en) * 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10177018B2 (en) * 2016-08-11 2019-01-08 Applied Materials, Inc. Process kit erosion and service life prediction
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
JP6995008B2 (ja) * 2018-04-27 2022-01-14 東京エレクトロン株式会社 基板処理装置
US10957521B2 (en) * 2018-05-29 2021-03-23 Lam Research Corporation Image based plasma sheath profile detection on plasma processing tools
CN118398464A (zh) * 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
US10903050B2 (en) * 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
US12009236B2 (en) * 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102689653B1 (ko) * 2019-06-26 2024-07-31 삼성전자주식회사 센서 모듈 및 이를 구비하는 식각 장치
KR102905595B1 (ko) * 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
TWI861079B (zh) * 2020-03-25 2024-11-11 美商蘭姆研究公司 基板處理系統及其方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110235056A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for measuring wear rate
TW201237923A (en) * 2010-12-07 2012-09-16 Lam Res Corp Plasma processing system control based on RF voltage
US20150168130A1 (en) * 2013-12-16 2015-06-18 Tokyo Electron Limited Wear amount measuring apparatus and method, temperature measuring apparatus and method and substrate processing system
US20160216185A1 (en) * 2015-01-28 2016-07-28 Lam Research Corporation Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber
US20170053819A1 (en) * 2015-08-21 2017-02-23 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US20170213758A1 (en) * 2016-01-26 2017-07-27 Applied Materials, Inc. Wafer edge ring lifting solution

Also Published As

Publication number Publication date
TW201935593A (zh) 2019-09-01
KR20240122603A (ko) 2024-08-12
KR102916791B1 (ko) 2026-01-22
JP2021506117A (ja) 2021-02-18
TW202405987A (zh) 2024-02-01
CN111466019A (zh) 2020-07-28
US20250191962A1 (en) 2025-06-12
TWI863390B (zh) 2024-11-21
KR20200086375A (ko) 2020-07-16
WO2019112903A1 (en) 2019-06-13
US12237203B2 (en) 2025-02-25
US20230083737A1 (en) 2023-03-16
US20200373193A1 (en) 2020-11-26
CN120221492A (zh) 2025-06-27
JP7323525B2 (ja) 2023-08-08
JP2023145608A (ja) 2023-10-11
JP7672454B2 (ja) 2025-05-07
CN111466019B (zh) 2025-03-11
US11538713B2 (en) 2022-12-27
KR102693246B1 (ko) 2024-08-07

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