TWI808927B - 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 - Google Patents
相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 Download PDFInfo
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- TWI808927B TWI808927B TW112111541A TW112111541A TWI808927B TW I808927 B TWI808927 B TW I808927B TW 112111541 A TW112111541 A TW 112111541A TW 112111541 A TW112111541 A TW 112111541A TW I808927 B TWI808927 B TW I808927B
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- Prior art keywords
- phase shift
- film
- layer
- light
- reflectance
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Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 659
- 239000000758 substrate Substances 0.000 title claims abstract description 181
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 204
- 239000002184 metal Substances 0.000 claims abstract description 204
- 239000000463 material Substances 0.000 claims abstract description 160
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 55
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000007769 metal material Substances 0.000 claims abstract description 25
- 239000011651 chromium Substances 0.000 claims description 192
- 230000001603 reducing effect Effects 0.000 claims description 143
- 229910052804 chromium Inorganic materials 0.000 claims description 140
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 131
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 127
- 229910052760 oxygen Inorganic materials 0.000 claims description 90
- 229910052757 nitrogen Inorganic materials 0.000 claims description 85
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 70
- 239000001301 oxygen Substances 0.000 claims description 70
- 238000005530 etching Methods 0.000 claims description 60
- 229910052799 carbon Inorganic materials 0.000 claims description 51
- 239000010936 titanium Substances 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 238000002834 transmittance Methods 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 22
- 238000002310 reflectometry Methods 0.000 claims description 22
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 20
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 claims description 13
- 229910021355 zirconium silicide Inorganic materials 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 11
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 11
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 3
- -1 silicide nitride Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002090 carbon oxide Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
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- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
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- 239000011737 fluorine Substances 0.000 description 14
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- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 10
- 230000008033 biological extinction Effects 0.000 description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 description 10
- 229930195733 hydrocarbon Natural products 0.000 description 10
- 150000002430 hydrocarbons Chemical class 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000004215 Carbon black (E152) Substances 0.000 description 9
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- 238000001039 wet etching Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
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- 239000011261 inert gas Substances 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
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- 229910052754 neon Inorganic materials 0.000 description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 5
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 5
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- 230000007423 decrease Effects 0.000 description 5
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- 229960003753 nitric oxide Drugs 0.000 description 5
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- 239000007800 oxidant agent Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 3
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- 229910001882 dioxygen Inorganic materials 0.000 description 3
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- 229910052723 transition metal Inorganic materials 0.000 description 3
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- 238000003763 carbonization Methods 0.000 description 2
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 2
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 2
- 150000002222 fluorine compounds Chemical group 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 229910003470 tongbaite Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910016008 MoSiC Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical group 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017004875 | 2017-01-16 | ||
| JP2017-004875 | 2017-01-16 | ||
| JP2017230282A JP6891099B2 (ja) | 2017-01-16 | 2017-11-30 | 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP2017-230282 | 2017-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI808927B true TWI808927B (zh) | 2023-07-11 |
| TW202328801A TW202328801A (zh) | 2023-07-16 |
Family
ID=62985516
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106146200A TWI800499B (zh) | 2017-01-16 | 2017-12-28 | 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 |
| TW112111541A TWI808927B (zh) | 2017-01-16 | 2017-12-28 | 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106146200A TWI800499B (zh) | 2017-01-16 | 2017-12-28 | 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP6891099B2 (ja) |
| KR (2) | KR102505733B1 (ja) |
| CN (1) | CN117518704A (ja) |
| TW (2) | TWI800499B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112119352A (zh) * | 2018-03-15 | 2020-12-22 | 大日本印刷株式会社 | 大型光掩模 |
| CN112689796A (zh) * | 2018-09-14 | 2021-04-20 | 株式会社尼康 | 相移掩模坯料、相移掩模、曝光方法以及器件制造方法 |
| JPWO2022230694A1 (ja) * | 2021-04-30 | 2022-11-03 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005092241A (ja) * | 2002-03-01 | 2005-04-07 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6342205A (ja) * | 1986-08-07 | 1988-02-23 | Nec Corp | 発振回路 |
| JP3262302B2 (ja) * | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
| JPH10186632A (ja) * | 1996-10-24 | 1998-07-14 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク |
| JP2983020B1 (ja) * | 1998-12-18 | 1999-11-29 | ホーヤ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2001083687A (ja) * | 1999-09-09 | 2001-03-30 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス |
| US6500587B1 (en) * | 2001-02-02 | 2002-12-31 | Advanced Micro Devices, Inc. | Binary and attenuating phase-shifting masks for multiple wavelengths |
| JP2003322947A (ja) * | 2002-04-26 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP4525893B2 (ja) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
| JP4784983B2 (ja) * | 2006-01-10 | 2011-10-05 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP5121020B2 (ja) * | 2008-09-26 | 2013-01-16 | Ｈｏｙａ株式会社 | 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法 |
| KR101282040B1 (ko) | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
| JP6138676B2 (ja) * | 2013-12-27 | 2017-05-31 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
| JP5743008B2 (ja) * | 2014-06-06 | 2015-07-01 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法、フォトマスク、光パターン照射方法、並びにハーフトーン位相シフト膜の設計方法 |
| JP5940755B1 (ja) * | 2014-12-26 | 2016-06-29 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6322250B2 (ja) * | 2016-10-05 | 2018-05-09 | Hoya株式会社 | フォトマスクブランク |
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| JP2005092241A (ja) * | 2002-03-01 | 2005-04-07 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法 |
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| TWI800499B (zh) | 2023-05-01 |
| TW202328801A (zh) | 2023-07-16 |
| KR20180084636A (ko) | 2018-07-25 |
| JP2018116263A (ja) | 2018-07-26 |
| JP2021144237A (ja) | 2021-09-24 |
| CN117518704A (zh) | 2024-02-06 |
| TW201832921A (zh) | 2018-09-16 |
| KR102548886B1 (ko) | 2023-06-30 |
| KR102505733B1 (ko) | 2023-03-03 |
| JP6891099B2 (ja) | 2021-06-18 |
| JP7095157B2 (ja) | 2022-07-04 |
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