TWI808162B - 水性組成物及使用此組成物之清洗方法 - Google Patents
水性組成物及使用此組成物之清洗方法 Download PDFInfo
- Publication number
- TWI808162B TWI808162B TW108114406A TW108114406A TWI808162B TW I808162 B TWI808162 B TW I808162B TW 108114406 A TW108114406 A TW 108114406A TW 108114406 A TW108114406 A TW 108114406A TW I808162 B TWI808162 B TW I808162B
- Authority
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- Taiwan
- Prior art keywords
- fluoride
- acid
- phosphoric acid
- phosphonate
- alkyl
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 101
- 238000004140 cleaning Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 17
- -1 fluoride ions Chemical class 0.000 claims abstract description 69
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 38
- 239000002253 acid Substances 0.000 claims abstract description 32
- 150000003839 salts Chemical class 0.000 claims abstract description 29
- 150000001768 cations Chemical class 0.000 claims abstract description 23
- 125000005600 alkyl phosphonate group Chemical group 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims description 18
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000011698 potassium fluoride Substances 0.000 claims description 7
- 235000003270 potassium fluoride Nutrition 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- LJKDOMVGKKPJBH-UHFFFAOYSA-N 2-ethylhexyl dihydrogen phosphate Chemical compound CCCCC(CC)COP(O)(O)=O LJKDOMVGKKPJBH-UHFFFAOYSA-N 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- OZFLRNPZLCUVFP-UHFFFAOYSA-N 8-methylnonyl dihydrogen phosphate Chemical compound CC(C)CCCCCCCOP(O)(O)=O OZFLRNPZLCUVFP-UHFFFAOYSA-N 0.000 claims description 4
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims description 4
- UOKRBSXOBUKDGE-UHFFFAOYSA-N butylphosphonic acid Chemical compound CCCCP(O)(O)=O UOKRBSXOBUKDGE-UHFFFAOYSA-N 0.000 claims description 4
- SCIGVHCNNXTQDB-UHFFFAOYSA-N decyl dihydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(O)=O SCIGVHCNNXTQDB-UHFFFAOYSA-N 0.000 claims description 4
- DZQISOJKASMITI-UHFFFAOYSA-N decyl-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound CCCCCCCCCCP(O)(O)=O DZQISOJKASMITI-UHFFFAOYSA-N 0.000 claims description 4
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 claims description 4
- GGKJPMAIXBETTD-UHFFFAOYSA-N heptyl dihydrogen phosphate Chemical compound CCCCCCCOP(O)(O)=O GGKJPMAIXBETTD-UHFFFAOYSA-N 0.000 claims description 4
- VAJFLSRDMGNZJY-UHFFFAOYSA-N heptylphosphonic acid Chemical compound CCCCCCCP(O)(O)=O VAJFLSRDMGNZJY-UHFFFAOYSA-N 0.000 claims description 4
- PHNWGDTYCJFUGZ-UHFFFAOYSA-N hexyl dihydrogen phosphate Chemical compound CCCCCCOP(O)(O)=O PHNWGDTYCJFUGZ-UHFFFAOYSA-N 0.000 claims description 4
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims description 4
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 4
- WYAKJXQRALMWPB-UHFFFAOYSA-N nonyl dihydrogen phosphate Chemical compound CCCCCCCCCOP(O)(O)=O WYAKJXQRALMWPB-UHFFFAOYSA-N 0.000 claims description 4
- OLGGYSFJQGDOFX-UHFFFAOYSA-N nonylphosphonic acid Chemical compound CCCCCCCCCP(O)(O)=O OLGGYSFJQGDOFX-UHFFFAOYSA-N 0.000 claims description 4
- WRKCIHRWQZQBOL-UHFFFAOYSA-N octyl dihydrogen phosphate Chemical compound CCCCCCCCOP(O)(O)=O WRKCIHRWQZQBOL-UHFFFAOYSA-N 0.000 claims description 4
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims description 4
- NVTPMUHPCAUGCB-UHFFFAOYSA-N pentyl dihydrogen phosphate Chemical compound CCCCCOP(O)(O)=O NVTPMUHPCAUGCB-UHFFFAOYSA-N 0.000 claims description 4
- CKVICYBZYGZLLP-UHFFFAOYSA-N pentylphosphonic acid Chemical compound CCCCCP(O)(O)=O CKVICYBZYGZLLP-UHFFFAOYSA-N 0.000 claims description 4
- VAIOGRPEROWKJX-UHFFFAOYSA-N undecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCOP(O)(O)=O VAIOGRPEROWKJX-UHFFFAOYSA-N 0.000 claims description 4
- GKIQHTGBORJXKZ-UHFFFAOYSA-N undecylphosphonic acid Chemical compound CCCCCCCCCCCP(O)(O)=O GKIQHTGBORJXKZ-UHFFFAOYSA-N 0.000 claims description 4
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical compound NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 claims description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical compound F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 claims description 3
- 229910001633 beryllium fluoride Inorganic materials 0.000 claims description 3
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 claims description 3
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 claims description 3
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 3
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 3
- 235000011151 potassium sulphates Nutrition 0.000 claims description 3
- 229910000344 rubidium sulfate Inorganic materials 0.000 claims description 3
- GANPIEKBSASAOC-UHFFFAOYSA-L rubidium(1+);sulfate Chemical compound [Rb+].[Rb+].[O-]S([O-])(=O)=O GANPIEKBSASAOC-UHFFFAOYSA-L 0.000 claims description 3
- 239000011775 sodium fluoride Substances 0.000 claims description 3
- 235000013024 sodium fluoride Nutrition 0.000 claims description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims description 3
- 229910001637 strontium fluoride Inorganic materials 0.000 claims description 3
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 claims description 3
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 3
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 claims description 3
- GAJQCIFYLSXSEZ-UHFFFAOYSA-N tridecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCOP(O)(O)=O GAJQCIFYLSXSEZ-UHFFFAOYSA-N 0.000 claims description 3
- KREGXBHGJXTOKZ-UHFFFAOYSA-N tridecylphosphonic acid Chemical compound CCCCCCCCCCCCCP(O)(O)=O KREGXBHGJXTOKZ-UHFFFAOYSA-N 0.000 claims description 3
- FRCRFINDRJFEFN-UHFFFAOYSA-N CCCCCCCCCCCCCOP(O)=O Chemical compound CCCCCCCCCCCCCOP(O)=O FRCRFINDRJFEFN-UHFFFAOYSA-N 0.000 claims description 2
- MGJJRXIEFROZLZ-UHFFFAOYSA-N CCCCCCCCCCCCOP(O)=O Chemical compound CCCCCCCCCCCCOP(O)=O MGJJRXIEFROZLZ-UHFFFAOYSA-N 0.000 claims description 2
- DEKOLWKUSOWLMN-UHFFFAOYSA-N CCCCCCCCCCCOP(O)=O Chemical compound CCCCCCCCCCCOP(O)=O DEKOLWKUSOWLMN-UHFFFAOYSA-N 0.000 claims description 2
- ZBEKPPVMYNVMQO-UHFFFAOYSA-N CCCCCCCCCCOP(O)=O Chemical compound CCCCCCCCCCOP(O)=O ZBEKPPVMYNVMQO-UHFFFAOYSA-N 0.000 claims description 2
- OCLUUUROQDRUIU-UHFFFAOYSA-N CCCCCCCCCOP(O)=O Chemical compound CCCCCCCCCOP(O)=O OCLUUUROQDRUIU-UHFFFAOYSA-N 0.000 claims description 2
- XJKCIKMIYBWISX-UHFFFAOYSA-N CCCCCCCCOP(O)=O Chemical compound CCCCCCCCOP(O)=O XJKCIKMIYBWISX-UHFFFAOYSA-N 0.000 claims description 2
- DEVJMJPPUVBPOV-UHFFFAOYSA-N CCCCCCCOP(O)=O Chemical compound CCCCCCCOP(O)=O DEVJMJPPUVBPOV-UHFFFAOYSA-N 0.000 claims description 2
- OEODWKRQWJHQSK-UHFFFAOYSA-N CCCCCCOP(O)=O Chemical compound CCCCCCOP(O)=O OEODWKRQWJHQSK-UHFFFAOYSA-N 0.000 claims description 2
- WMFDLEFIURCJJE-UHFFFAOYSA-N CCCCCOP(O)=O Chemical compound CCCCCOP(O)=O WMFDLEFIURCJJE-UHFFFAOYSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- WCJLOEFXANROAO-UHFFFAOYSA-N CCCCOP(O)=O Chemical compound CCCCOP(O)=O WCJLOEFXANROAO-UHFFFAOYSA-N 0.000 claims 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims 1
- 239000010408 film Substances 0.000 description 41
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 36
- 125000000217 alkyl group Chemical group 0.000 description 36
- 235000011007 phosphoric acid Nutrition 0.000 description 35
- 238000001312 dry etching Methods 0.000 description 31
- 235000002639 sodium chloride Nutrition 0.000 description 26
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 239000010941 cobalt Substances 0.000 description 20
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 20
- 229910017052 cobalt Inorganic materials 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 16
- 150000002148 esters Chemical group 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 229910000531 Co alloy Inorganic materials 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- 238000011282 treatment Methods 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 9
- 239000007769 metal material Substances 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 150000007513 acids Chemical class 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical class [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical class CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 4
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical class CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 4
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 4
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical class CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000003868 ammonium compounds Chemical class 0.000 description 3
- 150000001553 barium compounds Chemical class 0.000 description 3
- 150000001573 beryllium compounds Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000002642 lithium compounds Chemical class 0.000 description 3
- 150000002681 magnesium compounds Chemical class 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 150000003112 potassium compounds Chemical class 0.000 description 3
- 150000003298 rubidium compounds Chemical class 0.000 description 3
- 150000003388 sodium compounds Chemical class 0.000 description 3
- 150000003438 strontium compounds Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 159000000009 barium salts Chemical class 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 description 2
- RFVVBBUVWAIIBT-UHFFFAOYSA-N beryllium nitrate Chemical compound [Be+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O RFVVBBUVWAIIBT-UHFFFAOYSA-N 0.000 description 2
- KQHXBDOEECKORE-UHFFFAOYSA-L beryllium sulfate Chemical compound [Be+2].[O-]S([O-])(=O)=O KQHXBDOEECKORE-UHFFFAOYSA-L 0.000 description 2
- PPYIVKOTTQCYIV-UHFFFAOYSA-L beryllium;selenate Chemical compound [Be+2].[O-][Se]([O-])(=O)=O PPYIVKOTTQCYIV-UHFFFAOYSA-L 0.000 description 2
- NLSCHDZTHVNDCP-UHFFFAOYSA-N caesium nitrate Chemical compound [Cs+].[O-][N+]([O-])=O NLSCHDZTHVNDCP-UHFFFAOYSA-N 0.000 description 2
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 description 2
- 159000000007 calcium salts Chemical class 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 159000000003 magnesium salts Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 2
- 235000011118 potassium hydroxide Nutrition 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003297 rubidium Chemical class 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 2
- 159000000008 strontium salts Chemical class 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- LLNAMUJRIZIXHF-CLFYSBASSA-N (z)-2-methyl-3-phenylprop-2-en-1-ol Chemical compound OCC(/C)=C\C1=CC=CC=C1 LLNAMUJRIZIXHF-CLFYSBASSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- LGCBVEQNSDSLIH-UHFFFAOYSA-N 4-pyridin-3-ylbutanal Chemical compound O=CCCCC1=CC=CN=C1 LGCBVEQNSDSLIH-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- LAOUWBBPSMKPJK-UHFFFAOYSA-F P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC LAOUWBBPSMKPJK-UHFFFAOYSA-F 0.000 description 1
- SAXPMZURMAFLKZ-UHFFFAOYSA-F P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C SAXPMZURMAFLKZ-UHFFFAOYSA-F 0.000 description 1
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- SAQIYKYATZQENR-UHFFFAOYSA-F P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Mg+2].[Mg+2].[Mg+2].[Mg+2] Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Mg+2].[Mg+2].[Mg+2].[Mg+2] SAQIYKYATZQENR-UHFFFAOYSA-F 0.000 description 1
- AVCJHGALSPOEEP-UHFFFAOYSA-F P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+] Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+] AVCJHGALSPOEEP-UHFFFAOYSA-F 0.000 description 1
- MRRIIXGZFISJQL-UHFFFAOYSA-F P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Sr+2].[Sr+2].[Sr+2].[Sr+2] Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Sr+2].[Sr+2].[Sr+2].[Sr+2] MRRIIXGZFISJQL-UHFFFAOYSA-F 0.000 description 1
- 238000013494 PH determination Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- QABDZOZJWHITAN-UHFFFAOYSA-F [Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[O-]P([O-])(F)=O.[O-]P([O-])(F)=O.[O-]P([O-])(F)=O.[O-]P([O-])(F)=O Chemical compound [Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[Li+].[O-]P([O-])(F)=O.[O-]P([O-])(F)=O.[O-]P([O-])(F)=O.[O-]P([O-])(F)=O QABDZOZJWHITAN-UHFFFAOYSA-F 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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- 229940043376 ammonium acetate Drugs 0.000 description 1
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001627 beryllium chloride Inorganic materials 0.000 description 1
- 229910001865 beryllium hydroxide Inorganic materials 0.000 description 1
- XTIMETPJOMYPHC-UHFFFAOYSA-M beryllium monohydroxide Chemical compound O[Be] XTIMETPJOMYPHC-UHFFFAOYSA-M 0.000 description 1
- YUOUKRIPFJKDJY-UHFFFAOYSA-L beryllium;diacetate Chemical compound [Be+2].CC([O-])=O.CC([O-])=O YUOUKRIPFJKDJY-UHFFFAOYSA-L 0.000 description 1
- XUYHBCPJXPJTCK-UHFFFAOYSA-L beryllium;hydron;phosphate Chemical compound [Be+2].OP([O-])([O-])=O XUYHBCPJXPJTCK-UHFFFAOYSA-L 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- ZOAIGCHJWKDIPJ-UHFFFAOYSA-M caesium acetate Chemical compound [Cs+].CC([O-])=O ZOAIGCHJWKDIPJ-UHFFFAOYSA-M 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- SZTPKAVCCBAZGB-UHFFFAOYSA-F fluoro-dioxido-oxo-lambda5-phosphane tetrabutylazanium Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC.C(CCC)[N+](CCCC)(CCCC)CCCC SZTPKAVCCBAZGB-UHFFFAOYSA-F 0.000 description 1
- LBSSHDCCYGDLEY-UHFFFAOYSA-F fluoro-dioxido-oxo-lambda5-phosphane tetrapropylazanium Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC.C(CC)[N+](CCC)(CCC)CCC LBSSHDCCYGDLEY-UHFFFAOYSA-F 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- ARRNBPCNZJXHRJ-UHFFFAOYSA-M hydron;tetrabutylazanium;phosphate Chemical compound OP(O)([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC ARRNBPCNZJXHRJ-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- 229910001386 lithium phosphate Inorganic materials 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 description 1
- 239000004137 magnesium phosphate Substances 0.000 description 1
- 229910000157 magnesium phosphate Inorganic materials 0.000 description 1
- 229960002261 magnesium phosphate Drugs 0.000 description 1
- 235000010994 magnesium phosphates Nutrition 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IDNLEIKAOODITA-UHFFFAOYSA-N octaazanium fluoro-dioxido-oxo-lambda5-phosphane Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+] IDNLEIKAOODITA-UHFFFAOYSA-N 0.000 description 1
- KBYKOQOSGXIFTR-UHFFFAOYSA-F octapotassium fluoro-dioxido-oxo-lambda5-phosphane Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[K+].[K+].[K+].[K+].[K+].[K+].[K+].[K+] KBYKOQOSGXIFTR-UHFFFAOYSA-F 0.000 description 1
- UKIAUDLPOGWHHI-UHFFFAOYSA-F octasodium fluoro-dioxido-oxo-lambda5-phosphane Chemical compound P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.P(=O)([O-])([O-])F.[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+] UKIAUDLPOGWHHI-UHFFFAOYSA-F 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical class O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229940102127 rubidium chloride Drugs 0.000 description 1
- RTHYXYOJKHGZJT-UHFFFAOYSA-N rubidium nitrate Inorganic materials [Rb+].[O-][N+]([O-])=O RTHYXYOJKHGZJT-UHFFFAOYSA-N 0.000 description 1
- FOGKDYADEBOSPL-UHFFFAOYSA-M rubidium(1+);acetate Chemical compound [Rb+].CC([O-])=O FOGKDYADEBOSPL-UHFFFAOYSA-M 0.000 description 1
- KBAHJOGZLVQNBH-UHFFFAOYSA-K rubidium(1+);phosphate Chemical compound [Rb+].[Rb+].[Rb+].[O-]P([O-])([O-])=O KBAHJOGZLVQNBH-UHFFFAOYSA-K 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- MCZDHTKJGDCTAE-UHFFFAOYSA-M tetrabutylazanium;acetate Chemical compound CC([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC MCZDHTKJGDCTAE-UHFFFAOYSA-M 0.000 description 1
- ZXUCBXRTRRIBSO-UHFFFAOYSA-L tetrabutylazanium;sulfate Chemical compound [O-]S([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC ZXUCBXRTRRIBSO-UHFFFAOYSA-L 0.000 description 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- GTCDARUMAMVCRO-UHFFFAOYSA-M tetraethylazanium;acetate Chemical compound CC([O-])=O.CC[N+](CC)(CC)CC GTCDARUMAMVCRO-UHFFFAOYSA-M 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- AJPPAKACCOFNEN-UHFFFAOYSA-K tetraethylazanium;phosphate Chemical compound [O-]P([O-])([O-])=O.CC[N+](CC)(CC)CC.CC[N+](CC)(CC)CC.CC[N+](CC)(CC)CC AJPPAKACCOFNEN-UHFFFAOYSA-K 0.000 description 1
- TXBULBYASDPNNC-UHFFFAOYSA-L tetraethylazanium;sulfate Chemical compound [O-]S([O-])(=O)=O.CC[N+](CC)(CC)CC.CC[N+](CC)(CC)CC TXBULBYASDPNNC-UHFFFAOYSA-L 0.000 description 1
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 1
- IWISVGQUKNSOCC-UHFFFAOYSA-K tetramethylazanium;phosphate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.[O-]P([O-])([O-])=O IWISVGQUKNSOCC-UHFFFAOYSA-K 0.000 description 1
- KJFVITRRNTVAPC-UHFFFAOYSA-L tetramethylazanium;sulfate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.[O-]S([O-])(=O)=O KJFVITRRNTVAPC-UHFFFAOYSA-L 0.000 description 1
- PXJUBOLFJDSAQQ-UHFFFAOYSA-M tetrapropylazanium;acetate Chemical compound CC([O-])=O.CCC[N+](CCC)(CCC)CCC PXJUBOLFJDSAQQ-UHFFFAOYSA-M 0.000 description 1
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- HZPNJVXVIFRTRF-UHFFFAOYSA-N tetrapropylazanium;nitrate Chemical compound [O-][N+]([O-])=O.CCC[N+](CCC)(CCC)CCC HZPNJVXVIFRTRF-UHFFFAOYSA-N 0.000 description 1
- IGZKEGRSNICPPP-UHFFFAOYSA-K tetrapropylazanium;phosphate Chemical compound [O-]P([O-])([O-])=O.CCC[N+](CCC)(CCC)CCC.CCC[N+](CCC)(CCC)CCC.CCC[N+](CCC)(CCC)CCC IGZKEGRSNICPPP-UHFFFAOYSA-K 0.000 description 1
- JYFAUFFZEHJXIM-UHFFFAOYSA-L tetrapropylazanium;sulfate Chemical compound [O-]S([O-])(=O)=O.CCC[N+](CCC)(CCC)CCC.CCC[N+](CCC)(CCC)CCC JYFAUFFZEHJXIM-UHFFFAOYSA-L 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- CPWJKGIJFGMVPL-UHFFFAOYSA-K tricesium;phosphate Chemical compound [Cs+].[Cs+].[Cs+].[O-]P([O-])([O-])=O CPWJKGIJFGMVPL-UHFFFAOYSA-K 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 description 1
- KHAUBYTYGDOYRU-IRXASZMISA-N trospectomycin Chemical compound CN[C@H]([C@H]1O2)[C@@H](O)[C@@H](NC)[C@H](O)[C@H]1O[C@H]1[C@]2(O)C(=O)C[C@@H](CCCC)O1 KHAUBYTYGDOYRU-IRXASZMISA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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- C11D7/22—Organic compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Abstract
根據本發明可提供一種水性組成物,包含:
(A)含量為使得組成物中之氟化物離子濃度成為0.05~30mmol/L之量之氟化物離子供給源,
(B)含量為使得組成物中之陽離子相對於氟化物離子之莫耳比成為0.3~20之量之陽離子供給源,及
(C)以組成物之總量為基準計為0.0001~10質量%之選自於C4-13
烷基膦酸、C4-13
烷基膦酸酯、C4-13
烷基磷酸、及它們的鹽中之1種以上之化合物;
且pH落在2~6之範圍內。
Description
本發明關於水性組成物及使用此組成物之清洗方法,例如關於電子器件(例如半導體元件)之製造步驟中所使用的清洗用組成物、及使用此組成物之清洗方法。
如半導體元件等,在製造電子器件的過程中形成半導體積體電路時,通常會採用乾蝕刻步驟。在該乾蝕刻步驟中,會產生乾蝕刻殘渣(鋯系殘渣、鈦系殘渣、聚合物殘渣等),而必須將其去除。用以去除該乾蝕刻殘渣之清洗劑宜為不會對係成為清洗對象之半導體積體電路所使用的配線用金屬材料(例如:銅、鈦、鈷、鎢等)造成不良影響(例如侵蝕)。
考慮如此的觀點,已開發出各種清洗劑。例如專利文獻1、專利文獻2、專利文獻3等已揭示用以去除乾蝕刻後所產生的乾蝕刻殘渣之清洗用組成物、使用該組成物之清洗方法等。
又,在形成半導體積體電路的過程有時會有使用硬遮罩的情況。就硬遮罩的材料而言,以往係使用矽系、鈦系材料,但近年也有人提出氧化鋯系之硬遮罩(非專利文獻1)。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特表2013-533631號公報
[專利文獻2]日本特開2016-171294號公報
[專利文獻3]日本特開2006-83376號公報
[非專利文獻]
[非專利文獻1]M Padmanaban et al, J. Photopolym.Sci.Technol.,27(2014)503
[發明所欲解決之課題]
電子器件所使用的配線用之金屬材料、或乾蝕刻時所使用的遮蔽材料有各種種類,其組合也很多樣。因此,考慮乾蝕刻殘渣之去除效率、對配線用之金屬材料的抗腐蝕效果等之觀點,要求新穎的清洗用組成物之開發。
[解決課題之手段]
本發明提供如下之水性組成物、使用該水性組成物之清洗方法等。
[1]一種水性組成物,包含:
(A)含量為使得組成物中之氟化物離子(例如:F-
等)濃度成為0.05~30mmol/L之量之氟化物離子供給源,
(B)含量為使得組成物中之陽離子相對於氟化物離子之莫耳比成為0.3~20之量之陽離子供給源,及
(C)以組成物之總量為基準計為0.0001~10質量%之選自於C4-13
烷基膦酸、C4-13
烷基膦酸酯、C4-13
烷基磷酸、及它們的鹽中之1種以上之化合物;
且pH落在2~6(例如:2~5、2~4或2~3)之範圍內。
[2]如上述[1]所記載之水性組成物,其中,前述(A)成分之氟化物離子供給源係氟化氫、氟化銨、酸式氟化銨、四甲基氟化銨、四乙基氟化銨、四丙基氟化銨、四丁基氟化銨、氟化鋰、氟化鈉、氟化鉀、酸式氟化鉀、氟化銣、氟化銫、氟化鈹、氟化鎂、氟化鍶、氟化鋇、或它們的混合物。
[3]如上述[1]或[2]所記載之水性組成物,其中,前述(B)成分之陽離子供給源係鋰化合物、鈉化合物、鉀化合物、銣化合物、銫化合物、鈹化合物、鎂化合物、鍶化合物、鋇化合物、銨化合物、四甲基銨化合物、四乙基銨化合物、四丙基銨化合物、四丁基銨化合物、或它們的混合物(惟,含氟之化合物除外)。
[4]如上述[1]~[3]中任一項所記載之水性組成物,其中,前述水性組成物包含選自於下列中之至少任一者:
作為前述烷基膦酸之正丁基膦酸、正戊基膦酸、正己基膦酸、正庚基膦酸、正辛基膦酸、正壬基膦酸、正癸基膦酸、正十一烷基膦酸、正十二烷基膦酸、正十三烷基膦酸、或它們的混合物,
作為前述烷基膦酸酯之膦酸正丁酯、膦酸正戊酯、膦酸正己酯、膦酸正庚酯、膦酸正辛酯、膦酸正壬酯、膦酸正癸酯、膦酸正十一酯、膦酸正十二酯、膦酸正十三酯、或它們的混合物,及
前述烷基膦酸及前述烷基膦酸酯的鹽。
[4a]如上述[1]~[4]中任一項所記載之水性組成物,其中,
前述烷基膦酸係C5-12
烷基膦酸(宜為C5-11
烷基膦酸,為C5-9
烷基膦酸更佳,為C6-8
烷基膦酸再更佳),
前述烷基膦酸酯係這些烷基膦酸的酯。
[5]如上述[1]~[3]中任一項所記載之水性組成物,其中,前述水性組成物包含選自於下列中之至少任一者:
作為前述烷基磷酸之正丁基磷酸、正戊基磷酸、正己基磷酸、正庚基磷酸、正辛基磷酸、正壬基磷酸、正癸基磷酸、正十一烷基磷酸、正十二烷基磷酸、正十三烷基磷酸、磷酸-2-乙基己酯、磷酸異癸酯、或它們的混合物,以及
前述烷基磷酸的鹽。
[5a]如上述[1]~[5]中任一項所記載之水性組成物,其中,前述烷基磷酸係C4-13
烷基磷酸(宜為C5-11
烷基磷酸,為C5-9
烷基磷酸更佳,為C6-8
烷基磷酸再更佳)。
[5b]如上述[1]~[5a]中任一項所記載之水性組成物,其係用以去除乾蝕刻後之殘渣(例如:氧化鋯系乾蝕刻殘渣)之乾蝕刻殘渣去除用組成物。
[5c]如上述[1]~[5b]中任一項所記載之水性組成物,其係用以防止係成為清洗對象之電子器件的配線材料(例如:鈷或鈷合金等)腐蝕之組成物。
[5d]如上述[1]~[5c]中任一項所記載之水性組成物,其係自前述烷基膦酸排除十二烷基膦酸。
[5e]如上述[1]~[5d]中任一項所記載之組成物,其中,
從氟化物離子供給源供給的氟化物離子之濃度在組成物中為0.05~30mmol/L(宜為0.25~20mmol/L,為0.5~5mmol/L更佳),
從陽離子供給源供給的陽離子含量為使得以陽離子相對於氟化物離子之莫耳比計係成為0.3~20之量。
[6]一種電子器件之清洗方法,包含下列步驟:
使如上述[1]~[5e]中任一項所記載之水性組成物與電子器件接觸。
[7]一種電子器件之製造方法,包含下列步驟:
使如上述[1]~[5e]中任一項所記載之組成物與電子器件接觸。
[8]一種蝕刻液,包含如上述[1]~[5e]中任一項所記載之組成物。
[9]一種清洗液,包含如上述[1]~[5e]中任一項所記載之組成物。
[發明之效果]
有關本發明之理想態樣之水性組成物,可防止氮化矽等蝕刻阻擋膜、層間絕緣膜、鈷或鈷合金等配線金屬材料等腐蝕,同時有效率地去除乾蝕刻殘渣(例如:鋯系蝕刻殘渣、鈦系蝕刻殘渣、聚合物系蝕刻殘渣等)。
根據有關本發明之理想態樣之清洗方法,由於對氮化矽等蝕刻阻擋膜、層間絕緣膜、鈷或鈷合金等配線金屬材料等之抗腐蝕效果、蝕刻殘渣去除性良好,故能在半導體元件等電子器件之製造步驟中,以良好產率製造高精度、高品質的電子器件。
本發明中的水性組成物包含:
(A)含量為使得組成物中之氟化物離子濃度成為0.05~30mmol/L之量之氟化物離子供給源,
(B)含量為使得組成物中之陽離子相對於氟化物離子之莫耳比成為0.3~20之量之陽離子供給源,及
(C)以組成物之總量為基準計為0.0001~10質量%之選自於C4-13
烷基膦酸、C4-13
烷基膦酸酯、C4-13
烷基磷酸、及它們的鹽中之1種以上之化合物;
且pH落在2~6之範圍內。
以下,針對有關本發明之水性組成物進行詳細地說明。
[(A)成分:氟化物離子供給源]
本發明所使用的氟化物離子供給源,若為可供給氟化物離子者,則無特別限制。就此處所使用的氟化物離子供給源而言,可列舉例如:氟化氫、氟化銨、酸式氟化銨、四甲基氟化銨、四乙基氟化銨、四丙基氟化銨、四丁基氟化銨、氟化鋰、氟化鈉、氟化鉀、酸式氟化鉀、氟化銣、氟化銫、氟化鈹、氟化鎂、氟化鍶、氟化鋇、或它們的混合物。它們之中,為氟化氫、氟化銨、酸式氟化銨、四甲基氟化銨、氟化鉀、酸式氟化鉀特佳。
在使用作為清洗液等時,氟化物離子供給源係以水性組成物中之氟化物離子濃度成為0.05~30mmol/L的方式進行摻合。組成物中理想的氟化物離子濃度為0.25~20mmol/L,為0.5~5mmol/L更佳,為1.0~2.5mmol/L再更佳。例如就氟化物離子供給源的摻合量而言,在組成物中通常以氟化氫進行換算而為0.001~0.6質量%,宜為0.005~0.5質量%,為0.02~0.4質量%更佳。
[(B)成分:陽離子供給源]
本發明所使用的陽離子供給源並無特別限制,可列舉例如:鋰化合物、鈉化合物、鉀化合物、銣化合物、銫化合物、鈹化合物、鎂化合物、鍶化合物、鋇化合物、銨化合物、四甲基銨化合物、四乙基銨化合物、四丙基銨化合物、四丁基銨化合物、或它們的混合物。
就理想的鋰化合物而言,可列舉例如:氫氧化鋰、硝酸鋰、硫酸鋰、氯化鋰、四氟磷酸鋰、磷酸鋰、乙酸鋰等。
就理想的鈉化合物而言,可列舉例如:氫氧化鈉、硝酸鈉、硫酸鈉、氯化鈉、四氟磷酸鈉、磷酸鈉、乙酸鈉等。
就理想的鉀化合物而言,可列舉例如:氫氧化鉀、硝酸鉀、硫酸鉀、氯化鉀、四氟磷酸鉀、六氟磷酸鉀、磷酸鉀、乙酸鉀等。
就理想的銣化合物而言,可列舉例如:氫氧化銣、硝酸銣、硫酸銣、氯化銣、四氟磷酸銣、磷酸銣、乙酸銣等。
就理想的銫化合物而言,可列舉例如:氫氧化銫、硝酸銫、硫酸銫、氯化銫、四氟磷酸銫、磷酸銫、乙酸銫等。
就理想的鈹化合物而言,可列舉例如:氫氧化鈹、硝酸鈹、硫酸鈹、氯化鈹、四氟磷酸鈹、磷酸鈹、乙酸鈹等。
就理想的鎂化合物而言,可列舉例如:氫氧化鎂、硝酸鎂、硫酸鎂、氯化鎂、四氟磷酸鎂、磷酸鎂、乙酸鎂等。
就理想的鍶化合物而言,可列舉例如:氫氧化鍶、硝酸鍶、硫酸鍶、氯化鍶、四氟磷酸鍶、磷酸鍶、乙酸鍶等。
就理想的鋇化合物而言,可列舉例如:氫氧化鋇、硝酸鋇、硫酸鋇、氯化鋇、四氟磷酸鋇、磷酸鋇、乙酸鋇等。
就理想的銨化合物而言,可列舉例如:氨、硝酸銨、硫酸銨、氯化銨、四氟磷酸銨、磷酸銨、乙酸銨等。
就理想的四甲基銨化合物而言,可列舉例如:氫氧化四甲基銨、硝酸四甲基銨、硫酸四甲基銨、氯化四甲基銨、四氟磷酸四甲基銨、磷酸四甲基銨、乙酸四甲基銨等。
就理想的四乙基銨化合物而言,可列舉例如:氫氧化四乙基銨、硝酸四乙基銨、硫酸四乙基銨、氯化四乙基銨、四氟磷酸四乙基銨、磷酸四乙基銨、乙酸四乙基銨等。
就理想的四丙基銨化合物而言,可列舉例如:氫氧化四丙基銨、硝酸四丙基銨、硫酸四丙基銨、氯化四丙基銨、四氟磷酸四丙基銨、磷酸四丙基銨、乙酸四丙基銨等。
就理想的四丁基銨化合物而言,可列舉例如:氫氧化四丁基銨、硝酸四丁基銨、硫酸四丁基銨、氯化四丁基銨、四氟磷酸四丁基銨、磷酸四丁基銨、乙酸四丁基銨等。
它們之中,為硝酸銨、硝酸鉀、硫酸鉀、六氟磷酸鉀、硝酸四甲基銨、硫酸鋰、硫酸銣、氫氧化鉀特佳。
在使用作為清洗液等時,陽離子供給源係以水性組成物中之陽離子相對於氟化物離子之莫耳比(陽離子之莫耳濃度/氟化物離子之莫耳濃度)成為0.3~20,宜成為0.4~20,成為0.5~10更佳,成為0.6~8再更佳的方式進行摻合。本發明之另一實施態樣中,上述莫耳比的下限值為0.1或0.2。例如,陽離子供給源之摻合量通常係以組成物之總量為基準計為0.020~2.00質量%之範圍內,宜為0.025~1.50質量%,為0.05~1.0質量%更佳。
在此,上述陽離子相對於氟化物離子之莫耳比(陽離子之莫耳濃度/氟化物離子之莫耳濃度)的計算中,「陽離子之莫耳濃度」不包含來自(A)成分之質子。另一方面,使用氟化氫(HF)以外之化合物作為(A)成分時,係以來自(A)成分之陽離子的莫耳濃度與來自(B)成分之陽離子的莫耳濃度之合計作為上述「陽離子之莫耳濃度」來進行計算。
[(C)成分:烷基膦酸、烷基膦酸酯、烷基磷酸或它們的鹽]
(C1)烷基膦酸、烷基膦酸酯、或其鹽
本發明所使用的烷基膦酸係具有4~13個碳原子之C4-13
烷基膦酸(具有4~13個碳原子之烷基膦酸)。如此的烷基膦酸係為公知,且能於商業上取得(例如能從東京化成工業公司取得)。烷基膦酸宜為C5-11
烷基膦酸,為C5-9
烷基膦酸更佳,為C6-8
烷基膦酸再更佳。烷基膦酸的烷基部分可為直鏈,也可分支,但直鏈較佳。烷基膦酸的烷基部分若分支時,支鏈的數量宜為5以下,為3以下更佳,為1特佳。
本發明之水性組成物中也可使用上述烷基膦酸的酯。亦即,也可使用上述C4-13
烷基膦酸(具有4~13個碳原子之烷基膦酸)之烷基酯。
若烷基膦酸通常以通式R1
P(=O)(OH)2
(R1
為烷基)表示時,通式R1
P(=O)(OR2
)2
(R1
為烷基,R2
為烷基或氫原子:惟,2個R2
中之至少一個為烷基)表示之烷基膦酸酯也能使用於水性組成物中。
又,本說明書所記載之烷基膦酸酯也包含亞磷酸之烷基酯(亞磷酸酯)。亦即,通式R1
P(=O)(OR2
)2
(R1
為氫原子,R2
為烷基或氫原子:惟,2個R2
中之至少一個為烷基)表示之亞磷酸酯也能在本說明書中作為烷基膦酸酯而使用於水性組成物中。
由上可知,水性組成物中可使用如下通式(A)表示之化合物作為烷基膦酸或烷基膦酸酯。
R1
P(=O)(OR2
)2
・・・(A)
通式(A)中,R1
以及R2
分別獨立地為烷基或氫原子:惟,R1
及2個R2
之中,至少一個為烷基。
本發明所使用的烷基膦酸酯係合計具有4~13個碳原子之C4-13
烷基膦酸酯(合計具有4~13個碳原子之烷基膦酸酯)。烷基膦酸酯宜為C5-11
烷基膦酸酯,為C5-9
烷基膦酸酯更佳,為C6-8
烷基膦酸酯再更佳。又,上述通式(A)中的R1
及R2
之烷基鏈分別獨立地具有4~12個碳原子為佳,具有6~11個碳原子更佳,具有8~10個碳原子再更佳。
烷基膦酸酯之烷基,亦即上述通式(A)之R1
及R2
可為直鏈,也可分支,但宜包含直鏈狀之烷基。
又,上述通式(A)中的烷基鏈之數量,亦即R1
及R2
之烷基鏈的合計數量宜為2以下。亦即,就烷基膦酸酯而言,可使用上述通式(A)之R1
P(=O)(OR2
)2
之中,R1
及R2
均為烷基者,可使用R1
為烷基且R2
中之一個以下為烷基者、或R1
為氫原子,且R2
中之二個以下為烷基者等。再更佳為僅具有單一烷基鏈之烷基膦酸,亦即,使用上述通式(A)之R1
P(=O)(OR2
)2
之R1
及2個R2
之中,僅任一個為烷基者較理想。使用上述通式(A)之僅R1
為烷基者特佳。
本發明所使用的烷基膦酸的鹽為上述烷基膦酸的鹽,可列舉例如:銨鹽、四甲基銨鹽、四乙基銨鹽、四丙基銨鹽、四丁基銨鹽、鋰鹽、鈉鹽、鉀鹽、銣鹽、銫鹽、鈹鹽、鎂鹽、鈣鹽、鍶鹽、鋇鹽等。
就本發明所使用的烷基膦酸或其鹽而言,理想可列舉:正丁基膦酸、正戊基膦酸、正己基膦酸、正庚基膦酸、正辛基膦酸、正壬基膦酸、正癸基膦酸、正十一烷基膦酸、正十二烷基膦酸、正十三烷基膦酸、它們的鹽或它們的混合物。
就更理想使用的烷基膦酸或其鹽而言,係正戊基膦酸、正己基膦酸、正庚基膦酸、正辛基膦酸、正壬基膦酸、正癸基膦酸、正十一烷基膦酸、它們的鹽或它們的混合物。
又,本發明之水性組成物中也可使用上述烷基膦酸酯的鹽。例如可列舉對應於上述烷基膦酸的鹽者作為烷基膦酸酯的鹽。
烷基膦酸、烷基膦酸酯、或其鹽在水性組成物中的濃度可考慮為蝕刻或清洗對象之電子器件的配線材料之種類、蝕刻步驟所使用的遮蔽材料之種類等而適當地變更。理想的烷基膦酸、烷基膦酸酯、或其鹽之濃度以組成物之總量為基準計為0.0003~5質量%,為0.0004~1質量%更佳,為0.0005~0.1質量%再更佳,為0.001~0.1質量%特佳。
(C2)烷基磷酸或其鹽
本發明所使用的烷基磷酸係具有4~13個碳原子之C4-13
烷基磷酸(具有4~13個碳原子之烷基磷酸)。如此的烷基磷酸係為公知,且能於商業上取得(例如能從東京化成工業公司取得)。烷基磷酸宜為C5-11
烷基磷酸,為C5-9
烷基磷酸更佳,為C6-8
烷基磷酸再更佳。烷基磷酸的烷基部分可為直鏈,也可分支,但直鏈較佳。烷基磷酸的烷基部分若分支時,支鏈的數量宜為5以下,為3以下更佳,為1特佳。
本發明之水性組成物中,就烷基磷酸而言,除可使用磷酸之單烷基酯以外,還可使用二烷基酯及三烷基酯。亦即,不僅可使用通式P(=O)(OR3
)3
(R3
均為氫原子)表示之磷酸之R3
之中僅1個被取代為烷基而成的磷酸之單烷基酯,也可將R3
之中2個被取代為烷基而成的二烷基酯以及R3
均被取代為烷基而成的三烷基酯使用於本發明之水性組成物中。惟,就烷基磷酸而言,烷基鏈之數為2以下之二烷基酯(上述通式P(=O)(OR3
)3
之R3
中的2個為烷基者)及單烷基酯(上述通式P(=O)(OR3
)3
之R3
中僅1個為烷基者)較理想,烷基鏈之數為1之單烷基酯更佳。亦即,烷基磷酸宜僅具有單個烷基鏈(以上述R3
表示之烷基)。
烷基磷酸不考慮酯鍵之數量,合計具有4~13個碳原子。烷基磷酸不考慮酯鍵之數量,宜使用C5-11
烷基磷酸,使用C5-9
烷基磷酸更佳,使用C6-8
烷基磷酸再更佳。
又,上述通式P(=O)(OR3
)3
之R3
之烷基鏈宜具有4~12個碳原子,具有6~11個碳原子更佳,具有8~10個碳原子再更佳。烷基磷酸之烷基,亦即,上述通式P(=O)(OR3
)3
之R3
可為直鏈,也可分支,但宜包含直鏈狀之烷基。
本發明所使用的烷基磷酸的鹽係上述磷酸之單烷基酯或二烷基酯的鹽,可列舉例如:銨鹽、四甲基銨鹽、四乙基銨鹽、四丙基銨鹽、四丁基銨鹽、鋰鹽、鈉鹽、鉀鹽、銣鹽、銫鹽、鈹鹽、鎂鹽、鈣鹽、鍶鹽、鋇鹽等。
就本發明所使用的烷基磷酸或其鹽而言,理想可列舉:正丁基磷酸、正戊基磷酸、正己基磷酸、正庚基磷酸、正辛基磷酸、正壬基磷酸、正癸基磷酸、正十一烷基磷酸、正十二烷基磷酸、正十三烷基磷酸、磷酸-2-乙基己酯、磷酸異癸酯、它們的鹽或它們的混合物。
就更理想使用的烷基磷酸或其鹽而言,係正戊基磷酸、正己基磷酸、正庚基磷酸、正辛基磷酸、正壬基磷酸、正癸基磷酸、正十一烷基磷酸、磷酸-2-乙基己酯、磷酸異癸酯、它們的鹽或它們的混合物。
烷基磷酸或其鹽在水性組成物中的濃度可考慮為蝕刻或清洗對象之電子器件的配線材料之種類、蝕刻步驟所使用的遮蔽材料之種類等而適當地變更。理想的烷基磷酸或其鹽之濃度以組成物之總量為基準計為0.0003~5質量%,為0.0004~1質量%更佳,為0.0005~0.1質量%再更佳,為0.001~0.1質量%特佳。
[(D)成分:水]
本發明之組成物為水性,包含水作為稀釋劑。本發明所使用的水並無特別限制,宜為利用蒸餾、離子交換處理、過濾器處理、各種吸附處理等已將金屬離子、有機雜質、微粒粒子等予以去除而得者,為純水或超純水特佳。
本組成物中之水的含量通常為40~99.9998質量%,宜為89.5~99.998質量%。
[其他成分]
本發明之水性組成物中,也可依期望在不損及本發明之目的的範圍內摻合以往使用於半導體用水性組成物中之添加劑。
例如可添加酸、鹼、螯合劑、界面活性劑、消泡劑、氧化劑、還原劑、金屬抗腐蝕劑、水溶性有機溶劑等作為添加劑。這些添加劑係為公知,例如記載於日本特表2013-533631號公報中。
[水性組成物(液狀組成物)之調製方法]
本發明之水性組成物(液狀組成物)係藉由將上述(A)成分、上述(B)成分、上述(C)成分、水、所添加的必要之其他成分予以攪拌直到均勻而製得。
水性組成物之pH的範圍為2~6,宜為2~5,為2~4更佳,為2~3再更佳。
根據有關理想態樣之本發明之水性組成物,可防止氮化矽等蝕刻阻擋層、層間絕緣膜、鈷或鈷合金等配線金屬材料等腐蝕,同時有效率地去除乾蝕刻殘渣(例如:鋯系蝕刻殘渣、鈦系蝕刻殘渣、聚合物系蝕刻殘渣等)。
[水性組成物之使用方法:電子器件之清洗/製造方法]
有關本發明之水性組成物係藉由以清洗用水性組成物(以下也稱為「清洗液」)之形式,於濕式蝕刻步驟(或其前後之步驟)中,與電子器件(例如半導體基體)接觸,而可將乾蝕刻殘渣予以去除。就接觸的方法而言,例如藉由將清洗液容納於清洗用容器中,並將係成為清洗對象之電子器件浸漬於清洗液,可去除乾蝕刻殘渣,清洗電子器件。或藉由利用單片清洗方式處理電子器件,可去除乾蝕刻殘渣,清洗電子器件。清洗用水性組成物除可使用作為乾蝕刻殘渣去除液(清洗液)以外,也適合使用作為蝕刻液。又,也可將水性組成物使用作為化學機械研磨(CMP)步驟後用來清洗電子器件之清洗液。
如上所述,有關本發明之水性組成物能適於使用在具有清洗電子器件之步驟的清洗方法以及包含如此步驟之電子器件之製造方法中。
使用本發明之清洗液的溫度通常為10~80℃,宜為15~70℃,為20℃~65℃再更佳,為20℃~60℃特佳。溫度可依蝕刻的條件、所使用的電子器件(例如半導體元件)而適當地選擇。
使用本發明之清洗液的時間通常為0.2~60分鐘。時間可依清洗的條件、所使用的電子器件(例如半導體元件)而適當地選擇。可使用有機溶劑、或水、碳酸水、氨水作為使用本發明之清洗液後的淋洗液。
[成為清洗/製造對象之電子器件]
就作為本發明可適合使用的清洗對象以及製造對象之電子器件而言,例如係半導體元件及顯示元件,通常,乾蝕刻步驟後的中間產品係成為清洗的對象。半導體元件及顯示元件為:矽、非晶矽、多晶矽、玻璃等基板材料;氧化矽、氮化矽、碳化矽及它們的衍生物等絕緣材料;鈷、鈷合金、鎢、鈦-鎢等材料;鎵-砷、鎵-磷、銦-磷、銦-鎵-砷、銦-鋁-砷等化合物半導體及氧化鉻等氧化物半導體。就作為本發明之清洗對象之電子器件而言,特佳可列舉:使用有鈷或鈷合金配線材料、氧化鋯系硬遮罩、低介電常數層間絕緣膜之元件。
在本發明中,成為對象之乾蝕刻殘渣例如係將氧化鋯系之硬遮罩作為遮罩,並利用乾蝕刻在低介電常數層間絕緣膜上形成導孔、或溝時所產生者。乾蝕刻殘渣有部分係由於蝕刻氣體與氧化鋯系硬遮罩接觸而產生。因此,此時對象之乾蝕刻殘渣包含鋯。
[實施例]
以下,利用實施例具體地說明本發明,但只要能發揮本發明的效果,則可將實施形態適當地予以變化。
另外,若無特別指定,則%意指質量%。
[評價用晶圓]
>評價晶圓A>:用以評價乾蝕刻殘渣的去除狀態
從下層開始將氮化矽、層間絕緣膜、氮化矽、氧化鋯(硬遮罩)、進一步將光阻進行製膜,然後使光阻圖案化。
以光阻作為遮罩,利用乾蝕刻去除硬遮罩之預定的位置,並利用氧電漿所為之灰化將光阻去除。再以硬遮罩作為遮罩,利用乾蝕刻於氮化矽、層間絕緣膜上形成導孔。
>設有膜之晶圓>:用以評價使用了氧化鋯之殘渣去除性,及用以評價氮化矽、鈷的損壞
分別以如下的製膜條件製得分別將氧化鋯、氮化矽、及鈷之材料製膜而得的設有膜之晶圓。
(1) 氧化鋯:利用物理性氣相沉積法進行製膜,以1000Å之厚度於Si上進行製膜。
(2) 氮化矽(SiN):利用電漿化學氣相沉積法,以1000Å之厚度於Si上進行製膜。
(3) 鈷:利用物理氣相沉積法進行製膜,以2000Å之厚度於Si上進行製膜。
[評價方法]
>膜厚>
使用SII NanoTechnology股份有限公司製之螢光X射線裝置SEA1200VX(膜厚測定裝置A)、或n&k Technology公司製光學式膜厚計n&k1280(膜厚測定裝置B)測定設有膜之晶圓之膜厚。設有氧化鋯膜之晶圓、設有鈷膜之晶圓係使用膜厚測定裝置A測定膜厚,設有氮化矽膜之晶圓係使用膜厚測定裝置B測定膜厚。
>殘渣之去除評價>
係依照比表1之處理溫度高20℃之溫度的氧化鋯之E.R來進行判定。
判定方法:
A:0.5Å/min以上且未達2.0Å/min
B:2.0Å/min以上
C:未達0.5Å/min
A、B判定為合格。
>抗腐蝕材料之抗腐蝕評價>
係依照比表1之處理溫度高20℃之溫度的氧化鋯之E.R.來進行判定。
判定方法:
超過4Å/min者評價為不合格。(因為對氧化鋯硬遮罩造成損壞)
SiN:係依照比表1之處理溫度高20℃之溫度的氧化鋯之E.R.除以表1之處理溫度的SiN之E.R.而得的值來進行判定。
判定方法:
A:2以上
B:1以上且未達2
B’:0.8以上且未達1
C:未達0.8
A、B、B’判定為合格。
Co:係依照比表1之處理溫度高20℃之溫度的氧化鋯之E.R.除以表1之處理溫度的鈷之E.R.而得的值來進行判定。
判定方法:
A:1以上
B:0.1以上且未達1
C:未達0.1
A、B判定為合格。
>pH值之測定>
各實施例及比較例之水性組成物的pH值,係於25℃使用pH計(堀場製作所股份有限公司製之pH計F-52)進行測定。
[實施例1~21及比較例1~7]
試驗中使用設有氧化鋯膜之晶圓、設有氮化矽膜之晶圓、設有鈷膜之晶圓。將前述晶圓以表1、表2所記載之處理溫度或比該溫度高20℃之溫度浸漬於表1、表2所記載之水性組成物中,其後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。
設有氧化鋯膜之晶圓、設有氮化矽膜之晶圓、設有鈷膜之晶圓係實施30分鐘之浸漬處理,並從處理前後之膜厚算出E.R.。
由實施例1~21中可得知防止了氮化矽及鈷的損壞,同時可去除乾蝕刻殘渣。
另一方面,由表2之比較例1~7中可得知有時會有無法抑制鈷的損壞之情況、或雖可充分防止氮化矽的損壞但無法去除乾蝕刻殘渣之情況。
[表1]
[表2]
[產業上利用性]
有關本發明之理想態樣之水性組成物,可防止氮化矽等蝕刻阻擋層、層間絕緣膜、鈷或鈷合金等配線金屬材料等腐蝕,同時有效率地去除乾蝕刻殘渣。
根據有關本發明之理想態樣之蝕刻液、清洗液、及清洗方法,由於對氮化矽等蝕刻阻擋層、層間絕緣膜、鈷或鈷合金等配線金屬材料等之抗腐蝕效果、乾蝕刻殘渣去除性良好,故能在半導體元件等電子器件之製造步驟中,以良好產率製造高精度、高品質的電子器件。
1‧‧‧氧化鋯系乾蝕刻殘渣
2‧‧‧氧化鋯系硬遮罩
3‧‧‧鈷或鈷合金
5‧‧‧低介電常數層間絕緣膜
6‧‧‧氮化矽(SiN)
[圖1]係去除乾蝕刻殘渣1前的半導體元件之具有氧化鋯系硬遮罩2、鈷或鈷合金3、低介電常數層間絕緣膜5、氮化矽6之結構之半導體元件之一形態之剖面圖之示意圖。
Claims (8)
- 一種水性組成物,包含:(A)含量為使得該組成物中之氟化物離子濃度成為0.05~30mmol/L之量之氟化物離子供給源,(B)含量為使得該組成物中之陽離子相對於氟化物離子之莫耳比成為0.3~20之量之陽離子供給源,及(C)以該組成物之總量為基準計為0.0001~10質量%之選自於C4-13烷基膦酸、C4-13烷基膦酸酯、C4-13烷基磷酸、及它們的鹽中之1種以上之化合物;該陽離子供給源係選自由硝酸銨、硫酸鈉、硝酸鉀、硫酸鉀、六氟磷酸鉀、硝酸四甲基銨、硫酸鋰、硫酸銣、及氫氧化鉀構成之群組;且pH落在2~6之範圍內。
- 如申請專利範圍第1項之水性組成物,其中,該(A)成分之氟化物離子供給源係氟化氫、氟化銨、酸式氟化銨、四甲基氟化銨、四乙基氟化銨、四丙基氟化銨、四丁基氟化銨、氟化鋰、氟化鈉、氟化鉀、酸式氟化鉀、氟化銣、氟化銫、氟化鈹、氟化鎂、氟化鍶、氟化鋇、或它們的混合物。
- 如申請專利範圍第1或2項之水性組成物,其中,該水性組成物包含選自於下列中之至少任一者:作為該烷基膦酸之正丁基膦酸、正戊基膦酸、正己基膦酸、正庚基膦酸、正辛基膦酸、正壬基膦酸、正癸基膦酸、正十一烷基膦酸、正十二烷基膦酸、正十三烷基膦酸、或它們的混合物, 作為該烷基膦酸酯之膦酸正丁酯、膦酸正戊酯、膦酸正己酯、膦酸正庚酯、膦酸正辛酯、膦酸正壬酯、膦酸正癸酯、膦酸正十一酯、膦酸正十二酯、膦酸正十三酯、或它們的混合物,以及該烷基膦酸及該烷基膦酸酯的鹽。
- 如申請專利範圍第1或2項之水性組成物,其中,該水性組成物包含選自於下列中之至少任一者:作為該烷基磷酸之正丁基磷酸、正戊基磷酸、正己基磷酸、正庚基磷酸、正辛基磷酸、正壬基磷酸、正癸基磷酸、正十一烷基磷酸、正十二烷基磷酸、正十三烷基磷酸、磷酸-2-乙基己酯、磷酸異癸酯、或它們的混合物,以及該烷基磷酸的鹽。
- 一種電子器件之清洗方法,包含下列步驟:使如申請專利範圍第1至4項中任一項之水性組成物與電子器件接觸。
- 一種電子器件之製造方法,包含下列步驟:使如申請專利範圍第1至4項中任一項之水性組成物與電子器件接觸。
- 一種蝕刻液,包含如申請專利範圍第1至4項中任一項之水性組成物。
- 一種清洗液,包含如申請專利範圍第1至4項中任一項之水性組成物。
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