TWI805606B - 引線框架及其製造方法 - Google Patents

引線框架及其製造方法 Download PDF

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TWI805606B
TWI805606B TW107129577A TW107129577A TWI805606B TW I805606 B TWI805606 B TW I805606B TW 107129577 A TW107129577 A TW 107129577A TW 107129577 A TW107129577 A TW 107129577A TW I805606 B TWI805606 B TW I805606B
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Taiwan
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plate
lead frame
work
metal film
layer
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TW107129577A
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TW201912838A (zh
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渡邊孝治
金子健太郎
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日商新光電氣工業股份有限公司
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Abstract

提供一種引線框架，其包括：具有第1表面及與該第1表面為相反面的第2表面的板狀部；及，與該板狀部一體形成，並從該板狀部的該第1表面突起的突起部。該引線框架的表面包含形成有加工變質層的加工變質層形成區域、及未形成加工變質層的加工變質層非形成區域，該突起部的頂端面是該加工變質層形成區域，該第1表面的未形成該突起部的區域是該加工變質層非形成區域，該板狀部的該第2表面包含該加工變質層非形成區域。

Description

引線框架及其製造方法
本發明係關於一種引線框架及其製造方法。
軋延合金銅等軋延金屬材中，藉由在其加工工序中由軋延輥向其表面施加強應力，於其表層形成加工變質層（金屬結晶粒比內部細微化的層），而內部應力所致變形其大部分會作為殘留應力蓄積於該加工變質層。
蓄積有殘留應力的加工變質層同等存在於金屬材之兩面時，可保持作為板材料的平坦性，然而，對單側加工變質層實施了局部性或全面性除去加工之情形下，因殘留應力失衡，而導致金屬材發生翹曲，製造引線框架時會形成障礙。 ＜先前技術文獻＞ ＜專利文獻＞
專利文獻1:（日本）特開2007－039804號公報 專利文獻2:（日本）特開平7－176669號公報
＜發明所欲解決之問題＞
鑒於上述問題開發了本發明，其目的在於抑制引線框架的翹曲。 ＜用於解決問題之手段＞
本發明的一形態的引線框架包括：板狀部，具有第1表面及與該第1表面為相反面的第2表面；及，突起部，與該板狀部一體形成，並從該板狀部的該第1表面突起。該引線框架的表面包含形成有加工變質層的加工變質層形成區域、及未形成加工變質層的加工變質層非形成區域，該突起部的頂端面是該加工變質層形成區域，該第1表面的未形成該突起部的區域是該加工變質層非形成區域，該板狀部的該第2表面包含該加工變質層非形成區域。 ＜發明之功效＞
根據本發明的技術，能夠抑制引線框架的翹曲。
以下，參照附圖來說明用於實施本發明之形態。且，各附圖中，對相同構成部分採用相同符號，重覆之處省略說明。 ＜第1實施方式＞
[引線框架的構造]
圖1是例示第1實施方式的引線框架1的平面圖。參照圖1，引線框架1的包括俯視時呈大致矩形的基板框架10，及彼此分離地排列在基板框架10上的複數個單位引線框架群20。
在圖1的例中，3個單位引線框架群20排列成1列，然而單位引線框架群20可設定為任意數。且，也可以將單位引線框架群20排列成複數列。此外，圖1的例中，在鄰接的單位引線框架群20之間設有槽10x，但並非是必要構造。
作為引線框架1的材料，例如可以使用銅（Cu）、Cu基合金、鐵－鎳（Fe－Ni）、Fe－Ni基合金或不鏽鋼等。
各單位引線框架群20包含被排列成矩陣狀的複數個單位引線框架30。單位引線框架30是最終載置半導體晶片，並在切割位置Ｃ進行切割後形成各個半導體裝置的一部分的區域。在此，圖1例示的單位引線框架群20由排列成6行6列的單位引線框架30構成，此外，可將構成單位引線框架群20的單位引線框架30設定成任意數。
圖2A及圖2B是例示構成第1實施方式的引線框架1的單位引線框架30的圖，圖2A是平面圖，圖2B是沿著圖2A的A－A線的剖面圖。
參照圖2A及圖2B，單位引線框架30具有板狀部31及與板狀部31一體形成的突起部32。板狀部31包括晶片載置部311，在單位引線框架30上載置半導體晶片後進行單片化的半導體裝置中，該晶片載置部311構成用於載置半導體晶片的晶片墊。板狀部31的厚度例如可設定為20～60μｍ程度。另外，突起部32的高度（自板狀部31的上面的突出量）例如可設為60～90μｍ程度。單位引線框架30是具有柱狀的連接端子的單面半蝕刻型的引線框架。
另外，在本實施方式中，為了便於說明，將單位引線框架30的形成有突起部32的側稱為上側或一側，將未形成突起部32的側稱為下側或另一側。此外，將各部位的位於突起部32形成側的面稱為一面或上面，將位於未形成突起部32的側的面稱為另一面或下面。然而，單位引線框架30在上下逆轉的狀態下也能夠使用，或者能夠配置成任意角度。另外，俯視是指沿著板狀部31的一面的法線方向觀視對象物的情形，平面狀態是指沿著板狀部31的一面的法線方向觀視對象物時的形狀。
突起部32形成在板狀部31的上面，例如為突起的圓柱狀。此外，突起部32也可以是四角柱或六角柱。例如在俯視情形下，複數個突起部32按規定間距被設置在晶片載置部311的周圍。在圖2A所示的例子中，沿著晶片載置部311的各邊分別配置有2列突起部32。然而，突起部32並非一定是以2列設置在晶片載置部311周圍，也可以配置1列或3列以上的突起部32。此外，也可以僅在晶片載置部311的4個側邊中的彼此相對的兩側設置突起部32。
突起部32及俯視時與突起部32重疊的部分板狀部31構成連接端子321。在單位引線框架30上載置半導體晶片後進行單片化的半導體裝置中，連接端子321是與晶片載置部311電性獨立，但與半導體晶片電連接，並能夠與半導體裝置的外部進行連接的部分。
在晶片載置部311的下面形成有金屬膜33。在連接端子321的上面形成有金屬膜34，下面形成有金屬膜35。即，金屬膜35被形成在板狀部31下面的、俯視時與金屬膜34重疊的區域。
可將金屬膜35的下面與金屬膜33的下面設成大致同一平面。作為金屬膜33、34及35，例如能夠使用Ag膜、Au膜、Ni/Au膜（依序疊層Ni膜與Au膜而成的金屬膜）、Ni/Pd/Au膜（依序疊層Ni膜、Pd膜與Au膜而成的金屬膜）等。
圖3A及圖3B是說明加工變質層200的圖，圖3A是表示本實施方式的引線框架1的圖，圖3B是表示比較例的引線框架1X的圖。
藉由適宜組合鑄造、熱軋延、冷軋延、拋光處理、退火等工序的製造過程，對引線框架製造工序中使用的板材進行各種塑性加工的結果，獲得如圖3A及圖3B所示之加工變質層200，其為形成在板材兩面側表層的層。加工變質層200包括拜耳比層（Beilby layer）210（上層）及微細結晶層220（下層）。拜耳比層210由非結晶組織構成，微細結晶層220由極微細的結晶集合組織構成。如上所述，金加工變質層200是一個金屬晶粒比金屬內晶粒更細緻化的層。
圖3A所示的引線框架1，在其製造工序（後述）中除去一部分加工變質層200，其結果獲得表層形成有加工變質層200的加工變質層形成區域、及表層未形成加工變質層200的加工變質層非形成區域。引線框架1中，在突起部32的頂端面側（上端面側）的表層形成有加工變質層200，而在板狀部31的上面的未形成突起部32的區域的表層未形成加工變質層200。即，突起部32的頂端面是加工變質層形成區域，板狀部31的上面的未形成突起部32區域是加工變質層非形成區域。此外，引線框架1中，板狀部31的下面整面是表層未形成加工變質層200的加工變質層非形成區域。
另一方面，圖3B所示的比較例的引線框架1X也具有加工變質層形成區域及加工變質層非形成區域。引線框架1X中，與引線框架1同樣，在突起部32的頂端面側（上端面側）的表層形成有加工變質層200，在板狀部31的上面的未形成突起部32的區域的表層未形成加工變質層200。即，突起部32的頂端面是加工變質層形成區域，板狀部31的上面的未形成突起部32的區域是加工變質層非形成區域。此外，引線框架1X與引線框架1不同，其板狀部31的下面整面是表層形成有加工變質層200的加工變質層形成區域。
如上所述，引線框架1X中，板狀部31的上面側及下面側的加工變質層形成區域的面積相差較大，位於板狀部31的上面側及下面側的加工變質層200的殘留應力失衡，而發生翹曲。相對而言，引線框架1中，板狀部31的上面側及下面側的加工變質層形成區域的面積相近。或者可以說，板狀部31的上面側及下面側的加工變質層非形成區域的面積相近。因此，可保持加工變質層200的殘留應力的平衡，與引線框架1X相比，能夠抑制翹曲。 [引線框架的製造方法]
以下，關於第1實施方式的引線框架的製造方法，參照單位引線框架30的圖示進行說明，圖4A至圖6D是例示第1實施方式的引線框架1的製造工序的圖，是與圖2B對應的剖面圖。
首先，在圖4A所示的工序中，準備與圖1所示的基板框架10同形狀的金屬製板材10A（金屬板）。作為板材10A的材料，例如可以使用銅（Cu）、Cu基合金、鐵－鎳（Fe－Ni）、Fe－Ni基合金或不鏽鋼等。板材10A的厚度例如可以設為100～200μｍ程度。在板材10A的上面整面及下面整面設有加工變質層200。加工變質層200的厚度例如為數μｍ程度。
然後，在圖4B所示的工序中，在板材10A的上面整面形成感光性的抗蝕劑300，在板材10A的下面整面形成感光性的抗蝕劑310。作為抗蝕劑300及310，例如可以使用乾膜抗蝕劑或電著抗蝕劑等。並且，對抗蝕劑300進行曝光及顯影，以形成如圖4C所示的圖案。以僅覆蓋欲形成突起部32的部分的方式，形成抗蝕劑300的圖案。另外，抗蝕劑310依舊覆蓋板材10A的下面整面。
接下來，在圖4D所示的工序中，以抗蝕劑300及310作為蝕刻掩膜，對板材10A進行半蝕刻。未被抗蝕劑300覆蓋的區域，自板材10A的上面側被進行半蝕刻，形成板狀部31及突起部32。板材10A為銅的情形下，例如，藉由使用氯化銅（II）水溶液進行濕式蝕刻，能夠形成具有晶片載置部311的板狀部31及突起部32。突起部32及俯視時與突起部32重疊的部分板狀部31，構成連接端子321。半蝕刻的區域成為加工變質層200被除去的加工變質層非形成區域。即，板狀部31的上面的未形成突起部32的區域成為加工變質層非形成區域。
然後，在圖5A所示的工序中，除去圖4D所示的抗蝕劑300及310。接下來，在圖5B所示的工序中，形成覆蓋板狀部31的上面側的抗蝕劑320。作為抗蝕劑320，例如可以使用乾膜抗蝕劑或電著抗蝕劑等。然後，在圖5C所示的工序中，對板狀部31的下面進行軟蝕刻，除去形成在板狀部31的下面側的表層的加工變質層200。例如，可以自板狀部31的下面蝕刻1～2μｍ程度。在此，軟蝕刻是指採用電氣化學性的方法，以除去加工變質層200為準，對板狀部31的下面進行數μｍ程度的均勻蝕刻。例如，藉由使用氯化銅（II）水溶液進行濕式蝕刻，能夠進行軟蝕刻。接下來，在圖5D所示的工序中，除去圖5C所示的抗蝕劑320。
在此，還可以考慮，例如，在圖4A之前的階段對板材10A的上面及下面進行軟蝕刻，除去位於板材10A的上面及下面的加工變質層200的方法。然而，加工變質層200具有保護板材10A的表面品質的功能。因此，從保護板材10A的表面品質的觀點而言，不宜在過早階段除去加工變質層200，而優選在引線框架1的製造工序中除去加工變質層200。
然後，在圖6A所示的工序中，在板狀部31的上面與突起部32的上面及側面形成感光性的抗蝕劑330，在板狀部31的下面形成感光性的抗蝕劑340。作為抗蝕劑330及340，能夠使用例如乾膜抗蝕劑或電著抗蝕劑等。然後，在圖6B所示的工序中，對抗蝕劑330及340進行曝光及顯影，形成開口部330x、340x及340y。以露出突起部32的上面（連接端子321的上面）的方式形成開口部330x。且，以露出連接端子321的下面的方式形成開口部340x。以露出晶片載置部311的下面的方式形成開口部340y。
接下來，在圖6C所示的工序中，在開口部330x內露出的突起部32的上面（連接端子321的上面）形成金屬膜34，在開口部340x內露出的連接端子321的下面形成金屬膜35。金屬膜35被形成在板狀部31的下面的、俯視時與金屬膜34重疊的區域。此外，在開口部340y內露出的晶片載置部311的下面形成金屬膜33。
金屬膜33、34及35的材料如上所述。例如，能夠以板狀部31作為供電路徑，採用電鍍法形成金屬膜33、34及35。在此，板狀部31的下面是無加工變質層200存在的加工變質層非形成區域，因此能夠形成良好的電鍍膜。
然後，在圖6D所示的工序中，除去圖6C所示的抗蝕劑330及340。至此，完成單位引線框架30被配置成行列狀的引線框架1（參照圖1）。
接下來，關於在單位引線框架30上載置半導體晶片40來製作半導體裝置的工序進行說明。首先，在圖7A所示的工序中，在各單位引線框架30的晶片載置部311的上面，以面朝上的方式載置半導體晶片40。例如，能夠使用黏晶膠材（die attach flim）等黏著材50，在晶片載置部311的上面載置（晶片接合）半導體晶片40。在此情形下，以規定溫度進行加熱，使黏晶膠材硬化。作為黏著材50，還可以由膏體狀的黏著材，取代黏晶膠材等薄膜狀的黏著材。然後，利用金線或銅線等的金屬線60，使形成於半導體晶片40的電路形成面側的電極端子41與金屬膜34電連接。金屬線60例如能夠藉由引線接合法，連接半導體晶片40的電極端子41及金屬膜34。
在此，具有加工變質層200的加工變質層形成區域的硬度高於不具備加工變質層200的加工變質層非形成區域。因此，在引線接合的金屬膜34的下層具有加工變質層200的情形下，突起部32的頂端側的硬度會提高。如第1實施方式中突起部32的頂端面形成有加工變質層200的情形下，因形成有工變質層200，更有利於進行金屬線60與金屬膜34的引線接合。
然後，在圖7B所示的工序中，形成用於封裝各單位引線框架30、半導體晶片40及金屬線60的樹脂部70。作為樹脂部70，例如可以使用、環氧樹脂中包含充填材料的所謂的鑄模樹脂（mold resin）等。例如，能夠採用轉注成型（transfer molding）法或壓縮成型（compression molding）法等，形成樹脂部70。
然後，在圖7C所示的工序中，從下面側對各單位引線框架30進行蝕刻（例如，濕式蝕刻）。此時，藉由對金屬膜33及35（Ni/Pd/Au鍍膜等）選用可選擇性地除去板狀部31（Cu等）的蝕刻液，金屬膜33及35可發揮蝕刻掩膜的功能。由此，可僅對未形成金屬膜33及35的區域的板狀部31進行蝕刻，而使複數個連接端子321（引線）獨立於晶片載置部311（晶片墊），複數個連接端子321（引線）與晶片載置部311（晶片墊）從樹脂部70的下面突出（回蝕工序，etch back）。
接下來，在圖7D所示的工序中，在圖7C所示的構造體的切割位置Ｃ對其進行切割實現單片化，從而完成複數個半導體裝置2。例如能夠使用切片機等進行切割。
在此，可以將半導體裝置2作為1種產品出貨，也可以將圖1、圖2A及圖2B所示的單片化之前的引線框架1作為1種產品出貨。後者之情形，作為產品購入引線框架1者，能夠藉由實行圖7A至圖7D所示的各工序，製作成複數個半導體裝置2。 〈第1實施方式的變形例1〉
在第1實施方式的變形例1中，例示金屬膜的形成區域與上述第1實施方式不同的引線框架。
圖8A及圖8B是例示構成第1實施方式的變形例1的引線框架的單位引線框架30A的圖。圖8A是平面圖，圖8B是沿著圖8A的Ａ－Ａ線的剖面圖。
參照圖8B，相比單位引線框架30（參照圖2），單位引線框架30A的不同之處在於其晶片載置部311的下面未形成金屬膜33。
圖9A至圖9C是例示第1實施方式的變形例1的引線框架的製造工序的圖，是與圖8B對應的剖面圖。為了製作單位引線框架30A被配置成行列狀的引線框架1，首先進行與第1實施方式的圖4A至圖6A相同的工序。
然後，在圖9A所示的工序中，對抗蝕劑330及340進行曝光及顯影，形成開口部330x及340x（不形成圖6B所示的開口部340y）。以露出突起部32的上面（連接端子321的上面）的方式，形成開口部330x。且，以露出連接端子321的下面的方式形成開口部340x。
接下來，在圖9B所示的工序中，在開口部330x內露出的突起部32的上面（連接端子321的上面）形成的金屬膜34，並在開口部340x內露出的連接端子321的下面形成的金屬膜35。金屬膜34及35的材料及形成方法，例如可與第1實施方式相同。
然後，在圖9C所示的工序中，除去圖9B所示的抗蝕劑330及340。至此，完成單位引線框架30A被配置成行列狀的引線框架1（參照圖1）。
接下來，關於在單位引線框架30A載置半導體晶片40來製作半導體裝置的工序進行說明。首先，實行與第1實施方式的圖7A相同的工序之後，在圖10A所示的工序中形成樹脂部70，其用於封裝各單位引線框架30A、半導體晶片40及金屬線60。作為樹脂部70，例如能夠使用環氧樹脂中包含充填材料的所謂鑄模樹脂等。樹脂部70例如能夠採用轉注成型法或壓縮成型法等。
然後，在圖10B所示的工序中，自下面側對各單位引線框架30A進行蝕刻（例如，濕式蝕刻）。此時，藉由對金屬膜35（Ni/Pd/Au鍍膜等）選用可選擇性地除去板狀部31（Cu等）的蝕刻液，金屬膜35可發揮蝕刻掩膜的功能。由此，僅對未形成金屬膜35的區域的板狀部31進行蝕刻，而使複數個連接端子321（引線）獨立，且複數個連接端子321（引線）從樹脂部70的下面突出（回蝕工序）。並且，在晶片載置部311的下面未形成金屬膜33，因此，藉由蝕刻還可除去晶片載置部311，使黏著材50的下面從樹脂部70露出。黏著材50的下面與樹脂部70的下面，例如可以是同一平面。
然後，在圖10C所示的工序中，藉由在圖10B所示的構造體的切割位置Ｃ對其進行切割，實現單片化，完成複數個半導體裝置2A。例如能夠使用切片機等進行切割。
另外，也可以在單位引線框架30A上載置半導體晶片，依照下述方式製作半導體裝置。
首先，在圖11A所示的工序中，以面朝下的狀態將半導體晶片40載置於各單位引線框架30A上。具體而言，利用焊料凸塊80，使形成在半導體晶片40的電路形成面側的電極端子41電連接於形成在連接端子321的上面的金屬膜34。
然後，在圖11B所示的工序中，形成用於封裝各單位引線框架30A、半導體晶片40及焊料凸塊80的樹脂部70。作為樹脂部70，例如能夠使用環氧樹脂中包含充填材料的所謂鑄模樹脂等。例如能夠採用轉注成型法或壓縮成型法等形成樹脂部70。並且，能夠以露出半導體晶片40的背面整面的方式形成樹脂部70，還能夠以覆蓋半導體晶片40的一部分或背面整面的方式形成樹脂部70。
然後，在圖11C所示的工序中，自下面側對各單位引線框架30A進行蝕刻（例如，濕式蝕刻）。此時，藉由對金屬膜35（Ni/Pd/Au鍍膜等）選用可選擇性地除去板狀部31（Cu等）的蝕刻液，金屬膜35可發揮蝕刻掩膜的功能。由此，僅對未形成金屬膜35的區域的板狀部31進行蝕刻，而使複數個連接端子321（引線）獨立並從樹脂部70的下面突出（回蝕工序）。並且，在晶片載置部311的下面並未形成金屬膜33，因此，藉由蝕刻還可除去晶片載置部311。
接下來，在圖11D所示的工序中，在圖11C所示的構造體的切割位置Ｃ對其進行切割實現單片化，由此完成複數個半導體裝置2B。例如能夠使用切片機等進行切割。
如上所述，能夠製成在單位引線框架30A上倒裝半導體晶片40的半導體裝置2B。 〈第1實施方式的變形例2〉
在第1實施方式的變形例2中，例示對第1實施方式的變形例1的製造步驟順序加以變更的例子。
圖12A至圖13D是例示第1實施方式的變形例2的引線框架1的製造工序的圖，是與圖8B對應的剖面圖。
首先，在圖12A所示的工序中，與圖5A所示的工序同樣，除去圖4D所示的抗蝕劑300及310。然後，在圖12B所示的工序中，與圖6A所示的工序同樣，在板狀部31的上面、突起部32的上面及側面形成感光性的抗蝕劑330，在板狀部31的下面形成感光性的抗蝕劑340。作為抗蝕劑330及340，可以使用例如乾膜抗蝕劑或電著抗蝕劑等。
其次，在圖12C所示的工序中，與圖9A所示的工序同樣，對抗蝕劑330及340進行曝光及顯影，形成開口部330x及340x（不形成圖6B所示的開口部340y）。以露出突起部32的上面（連接端子321的上面）的方式形成開口部330x。另外，以露出連接端子321的下面的方式形成開口部340x。
然後，在圖12D所示的工序中，與圖9B所示的工序同樣，在開口部330x內露出的突起部32的上面（連接端子321的上面）形成金屬膜34，在開口部340x內露出的連接端子321的下面形成金屬膜35。金屬膜34及35的材料及形成方法，例如可與第1實施方式相同。然後，在圖13A所示的工序中，與圖9C所示的工序同樣，除去圖12D所示的抗蝕劑330及340。
然後，在圖13B所示的工序中，與圖5B所示的工序同樣，形成覆蓋板狀部31的上面側的抗蝕劑320。作為抗蝕劑320，例如能夠使用乾膜抗蝕劑或電著抗蝕劑等。然後，在圖13C所示的工序中，與圖5C所示的工序同樣，對板狀部31的下面進行軟蝕刻，除去位於板狀部31的下面的未被金屬膜35覆蓋的區域的加工變質層200。然後，在圖13D所示的工序中，除去抗蝕劑320。如上所述，完成單位引線框架30A被配置成行列狀的引線框架1（參照圖1）。
如上所述，可以在形成金屬膜34及35的工序之後，進行除去加工變質層200的工序，以除去板狀部31的下面的未形成金屬膜35的區域的加工變質層200。如此，藉由變更除去加工變質層200的工序的順序，能夠擴大製造工序的選擇範圍。在採用上述步驟順序的情形下，板狀部31的上面側及下面側的加工變質層形成區域的面積也相近，因此，能夠維持加工變質層200的殘留應力平衡，而能夠抑制引線框架1的翹曲。 〈第2實施方式〉
第2實施方式中例示與第1實施方式不同形態的引線框架。並且，在第2實施方式中，關於與上述實施方式相同的構成部，重覆之處省略說明。
圖14A至圖16E是例示構成第2實施方式的引線框架的單位引線框架的圖，圖14A是平面圖，圖14B是底面圖。並且，圖15A是圖14A的X1－X1剖面圖，圖15B是圖14A的X2－X2剖面圖。此外，圖16A是圖14A的Y1－Y1剖面圖，圖16B是圖14A的Y2－Y2剖面圖，圖16C是圖14A的Y3－Y3剖面圖，圖16D是圖14A的Y4－Y4剖面圖，圖16E是圖14A的Y5－Y5剖面圖。並且，引線框架的整體構造與圖1相同，因此省略圖示。
參照圖14A至圖16E，單位引線框架90包括框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95。單位引線框架90是所謂的DR－QFN（Dual Raw Quad Flat Non-leaded Package），是連接端子被排列成2列以對應多腳化（multi-pin）的封裝體。並且，第1引線92及第2引線94是本發明的板狀部的代表性的一例，第1連接端子93及第2連接端子95是本發明的突起部的代表性的一例。
框部91例如被設成畫框狀，俯視時，從框部91內側的規定區域向框部91的中心部，細長狀的第1引線92及第2引線94交替設置。並且，在半導體裝置（後述）的製造工序中，在接近框部91的側對鄰接的第1引線92與第2引線94進行切割，使之彼此電氣絕緣。
對第1引線92及第2引線94的下面側的規定區域進行半蝕刻（圖14B的緞紋花樣所示區域）。換言之，在第1引線92的下面的未經半蝕刻的區域，有第1連接端子93突起，在第2引線94的下面的未經半蝕刻的區域有第2連接端子95突出。第1連接端子93與第2連接端子95，以位於框部91的近側及遠側的方式，遍佈其全周呈鋸齒狀配置。
參照圖15A及圖15B，在第1引線92及第2引線94的上面的頂端側形成有金屬膜96。金屬膜96在半導體裝置的製造工序中成為與接合線連接的區域，或與倒裝晶片連接的區域。在第1連接端子93與第2連接端子95的下面形成金屬膜97。作為金屬膜96及97，例如能夠使用作為金屬膜33～35例示的膜。
第1引線92及第2引線94的上面整面及第1引線92及第2引線94的下面的被進行半蝕刻的區域，是表層未形成加工變質層200的加工變質層非形成區域。另一方面，框部91的下面、第1連接端子93的下面及第2連接端子95的下面是表層形成有加工變質層200的加工變質層形成區域。
單位引線框架90中，框部91、第1引線92及第2引線94、第1連接端子93及第2連接端子95的上面側與下面側的加工變質層形成區域的面積近似，因此，能夠保持加工變質層200的殘留應力平衡，抑制單位引線框架90的翹曲。 ［引線框架的製造方法］
以下，關於第2實施方式的引線框架1的製造方法，參照單位引線框架90的圖示進行說明。圖17A至圖22D是例示第2實施方式的引線框架的製造工序的圖。
在此，圖17A及圖17B、圖17C及圖17D、圖19A及圖19B、圖19C及圖19D、圖20A及圖20B、圖20C及圖20D、圖21A及圖21B、圖22C及圖22D是與圖15A及圖15B對應的剖面圖。此外，圖18A至圖18E是與圖16A至圖16E對應的剖面圖。
首先，在圖17A及圖17B所示的工序中，準備規定形狀的金屬製板材10B。作為板材10B的材料，例如能夠使用銅（Cu）、Cu基合金、鐵-鎳（Fe-Ni）、Fe-Ni基合金或不鏽鋼等。板材10Ｂ的厚度例如可設為100～200μｍ程度。在板材10B的上面整面及下面整面設有加工變質層200。加工變質層200的厚度例如可設為數μｍ程度。
並且，在板材10B的上面整面形成感光性的抗蝕劑350，在板材10B的下面整面形成感光性的抗蝕劑360，並對抗蝕劑350及360進行曝光及顯影，形成圖17A及圖17B所示的圖案。作為抗蝕劑350及360，例如能夠使用乾膜抗蝕劑或電著抗蝕劑等。Ｈ表示被進行半蝕刻的區域。F表示從上面側及下面側的兩側被進行半蝕刻而最終被全部移除的區域。
其次，在圖17C及圖17D、圖18A至圖18E所示的工序中，以抗蝕劑350及360作為蝕刻掩膜，從板材10B的兩面側進行半蝕刻。抗蝕劑350及360皆無的區域（圖17A及圖17B中的F所示的區域），藉由從兩面側進行半蝕刻而被完全移除。另外，被抗蝕劑350覆蓋而未被抗蝕劑360覆蓋的區域（H所示區域）從板材10B的下面側被進行半蝕刻，形成框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95。
然後，在圖19A及圖19B所示的工序中，除去圖17C、圖17D及圖18A至圖18E中所示的抗蝕劑350及360。然後，在圖19C及圖19D所示的工序中，形成抗蝕劑370，其覆蓋框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95的下面側。作為抗蝕劑370，例如能夠使用乾膜抗蝕劑或電著抗蝕劑等。
接下來，在圖20A及圖20B所示的工序中，對框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95的上面進行軟蝕刻，以除去位於框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95的上面的加工變質層200。例如藉由使用氯化銅（II）水溶液的濕式蝕刻，能夠進行軟蝕刻。然後，在圖20C及圖20D中，除去圖20A及圖20B所示的抗蝕劑370。
接下來，在圖21A及圖21B所示的工序中，在框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95的表面（上面、側面及下面）形成感光性的抗蝕劑380。作為抗蝕劑380，例如能夠使用乾膜抗蝕劑或電著抗蝕劑等。並且，在圖21C及圖21D所示的工序中，對抗蝕劑380進行曝光及顯影，形成開口部380x及380y。以露出第1引線92及第2引線94的上面的形成金屬膜96的區域的方式，形成開口部380x。另外，以露出第1連接端子93及第2連接端子95的下面的形成金屬膜97的區域的方式，形成開口部380y。
然後，在圖22A及圖22B所示的工序中，在開口部380x內露出的第1引線92及第2引線94的上面形成金屬膜96，在開口部380y內露出的第1連接端子93及第2連接端子95的下面形成金屬膜97。作為金屬膜96及97，例如能夠使用作為金屬膜33～35例示的膜。採用例如以框部91、第1引線92、第1連接端子93、第2引線94及第2連接端子95作為供電路徑的電鍍法，能夠形成金屬膜96及97。
然後，在圖22C及圖22D所示的工序中，除去圖22A及圖22B所示的抗蝕劑380。至此，完成單位引線框架90被配置成行列狀的引線框架1。
接下來，關於在單位引線框架90上載置半導體晶片40來製作半導體裝置的工序進行說明。在此，圖23A至圖23C表示與圖15A對應的剖面圖，圖23D表示與圖15B對應的剖面圖。
首先，在圖23A所示的工序中，以面朝下的狀態將半導體晶片40載置在各單位引線框架90上。具體而言，藉由焊料凸塊80，使形成在半導體晶片40的電路形成面側的電極端子41電連接於形成在第1引線92及第2引線94的上面的金屬膜96。
其次，在圖23B所示的工序中，形成用於封裝各單位引線框架90、半導體晶片40及焊料凸塊80的樹脂部70。作為樹脂部70，例如能夠使用環氧樹脂中含有充填材料的所謂鑄模樹脂等。例如能夠採用轉注成型法或壓縮成型法等形成樹脂部70。並且，能夠以露出半導體晶片40的背面整面的方式形成樹脂部70，還能夠以覆蓋半導體晶片40的背面的一部分或全部的方式形成樹脂部70。
然後，在圖23C及圖23D所示的工序中，藉由在圖23B所示的構造體的切割位置Ｃ對其進行切割實現單片化，完成複數個半導體裝置2C。例如能夠使用切片機等進行切割。
如上所述，能夠實現在單位引線框架90上以倒裝晶片的方式設置有半導體晶片40的半導體裝置2C。如圖24所示，在半導體裝置2C的下面，形成在第1連接端子93及第2連接端子95的下面的金屬膜97，從樹脂部70的下面露出。金屬膜97可用為外部連接端子。
〈第2實施方式的變形例〉
在第2實施方式的變形例中，說明對框部91的下面側進行半蝕刻的引線框架的例子。並且，在第2實施方式的變形例，關於與上述實施方式相同的構成部，重覆之處省略說明。
圖25A及圖25B是例示構成第2實施方式的變形例的引線框架的單位引線框架90A的圖，表示與圖15A及圖15B分別對應的剖面圖。在此，單位引線框架90A的平面圖與圖14A及圖14B同樣，Y1－Y1至Y5－Y5的剖面圖與圖16A至圖16E同樣，因此省略圖示。
參照圖25A及圖25B，相比單位引線框架90（參照圖15A及圖15B等），單位引線框架90A的不同之處在於其框部91的下面側被進行半蝕刻。
能夠對框部91的下面側，在圖17A及圖17B所示的工序中，以框部91的下面側也被露出的方式，在抗蝕劑360形成圖案，藉由圖17C、圖17D及圖18A至圖18E所示的工序，進行半蝕刻。
在單位引線框架90A中，藉由對框部91的下面側進行半蝕刻，減薄框部91，並能除去形成在框部91的下面的加工變質層200（參照圖15A、圖15B等）。因此，在框部91、第1引線92及第2引線94、第1連接端子93及第2連接端子95的上面側與下面側，加工變質層形成區域的面積會更為接近，因此更利於保持加工變質層200的殘留應力的平衡，進一步抑制單位引線框架90的翹曲。 ［實施例］
準備由C194材製作成的長80mm×寬250mm×厚0.127mm之板材，並進行第1實施方式的圖4A至圖5B的工序。然後，作為圖5C的工序，將圖5B所示的構造體，在常溫下在由氯化銅（II）水溶液構成的化學研磨液中浸漬20秒鐘，除去形成在板狀部31的下面側的表層的加工變質層200。然後，實施演算洗淨及水洗，剝離抗蝕劑320。然後，實施硫酸洗淨及水洗後進行乾燥，獲得圖5D所示的構造體。在此，製作了6個如圖5D所示的構造體。
另外，作為比較例，製作了6個樣品。製作比較例的各樣品時，除了未實施圖5C的工序（除去板狀部31下面側的加工變質層200）之外，其他工序與實施例同樣。
將實施例及比較例的各樣品以凸側朝下的方式依序配置在平台上，使用非接觸階差測定器（光學式焦點位置檢測方式的顯微鏡）對端部的翹曲量（相對平台的浮起量）進行測定。其結果如表1所示。
[表1]
Figure 02_image001
如表1所示，實施例的6個樣品中，翹曲量的最大值為1.0mm、最小值為0mm、平均值為0.25mm。相對於此，比較例的6個樣品中、翹曲量的最大值為3.5mm、最小值1.0mm、平均值為1.75mm。
關於上述實施例的結果，分析認為，藉由除去板狀部31下面側的加工變質層200，使板狀部31的上面側與下面側的加工變質層形成區域的面積近似，從而可保持加工變質層200的殘留應力的平衡，與比較例相比，可進一步抑制反翹。
根據本發明，可抑制引線框架的翹曲。
此外，以上例示說明了引線框架及引線框架製造方法的優選實施方式等，在不脫離申請專利範圍的記載範圍的前提下，可對其進行細微修飾。
本發明並不限於上述的實施方式等，可對本發明進行各種變形及置換。
1‧‧‧引線框架2、2A、2B、2C‧‧‧半導體裝置10‧‧‧基板框架10x‧‧‧槽20‧‧‧單位引線框架群30、30A、90、90Ａ‧‧‧單位引線框架31‧‧‧板狀部32‧‧‧突起部33、34、35、96、97‧‧‧金屬膜40‧‧‧半導體晶片41‧‧‧電極端子50‧‧‧黏著材60‧‧‧金屬線70‧‧‧樹脂部80‧‧‧焊料凸塊91‧‧‧框部92‧‧‧第1引線93‧‧‧第1連接端子94‧‧‧第2引線95‧‧‧第2連接端子200‧‧‧加工變質層210‧‧‧拜耳比層220‧‧‧微細結晶層311‧‧‧晶片載置部321‧‧‧連接端子C‧‧‧切割位置
圖1是例示第1實施方式的引線框架的平面圖。 圖2A及圖2B是例示構成第1實施方式的引線框架的單位引線框架的圖。 圖3A及圖3B是說明加工變質層的圖。 圖4A至圖4D是例示第1實施方式的引線框架的製造工序的圖。 圖5A至圖5D是例示第1實施方式的引線框架的製造工序的圖。 圖6A至圖6D是例示第1實施方式的引線框架的製造工序的圖。 圖7A至圖7D是例示第1實施方式的半導體裝置的製造工序的圖。 圖8A及圖8B是例示構成第1實施方式的變形例1的引線框架的單位引線框架的圖。 圖9A至圖9C是例示第1實施方式的變形例1的引線框架的製造工序的圖。 圖10A至圖10C是例示第1實施方式的變形例1的半導體裝置的製造工序的圖。 圖11A至圖11D是例示第1實施方式的變形例1的半導體裝置的製造工序的圖。 圖12A至圖12D是例示第1實施方式的變形例2的引線框架的製造工序的圖。 圖13A至圖13D是例示第1實施方式的變形例2的引線框架的製造工序的圖。 圖14A及圖14B是例示構成第2實施方式的引線框架的單位引線框架的圖。 圖15A及圖15B是例示構成第2實施方式的引線框架的單位引線框架的圖。 圖16A至圖16E是例示構成第2實施方式的引線框架的單位引線框架的圖。 圖17A至圖17D是例示第2實施方式的引線框架的製造工序的圖。 圖18A至圖18E是例示第2實施方式的引線框架的製造工序的圖。 圖19A至圖19D是例示第2實施方式的引線框架的製造工序的圖。 圖20A至圖20D是例示第2實施方式的引線框架的製造工序的圖。 圖21A至圖21D是例示第2實施方式的引線框架的製造工序的圖。 圖22A至圖22D是例示第2實施方式的引線框架的製造工序的圖。 圖23A至圖23D是例示第2實施方式的半導體裝置的製造工序的圖。 圖24是例示第2實施方式的半導體裝置的製造工序的圖。 圖25A及圖25B是例示構成第2實施方式的變形例的引線框架的單位引線框架圖。
30‧‧‧單位引線框架
31‧‧‧板狀部
32‧‧‧突起部
33、34、35‧‧‧金屬膜
311‧‧‧晶片載置部
321‧‧‧連接端子
200‧‧‧加工變質層
C‧‧‧切割位置

Claims (10)

  1. 一種引線框架，其包括：板狀部，具有第1表面及與該第1表面為相反面的第2表面；及突起部，與該板狀部一體形成，並從該板狀部的該第1表面突起，該引線框架的表面包含形成有加工變質層的加工變質層形成區域、及未形成加工變質層的加工變質層非形成區域，該突起部的頂端面是該加工變質層形成區域，該第1表面的未形成該突起部的區域是該加工變質層非形成區域，該板狀部的該第2表面包含該加工變質層非形成區域；還包括：第1金屬膜，形成在該突起部的該頂端面的該加工變質層形成區域；及第2金屬膜，形成在該板狀部的該第2表面。
  2. 根據申請專利範圍第1項之引線框架，其中，該第2金屬膜形成在該板狀部的該第2表面的、俯視時與該第1金屬膜重疊的區域。
  3. 根據申請專利範圍第1項之引線框架，其中，該板狀部的該第2表面整面是該加工變質層非形成區域。
  4. 根據申請專利範圍第1項之引線框架，其中，該板狀部的該第2表面包含該加工變質層形成區域，該第2金屬膜形成在該第2表面的該加工變質層形成區域。
  5. 根據申請專利範圍第4項之引線框架，其中，該第2表面的未形成該第2金屬膜的區域是該加工變質層非形成區域。
  6. 一種引線框架的製造方法，其包括：藉由對兩側表面形成有加工變質層的金屬板進行蝕刻，形成板狀部及突起部的工序，其中，該板狀部具有第1表面及與該第1表面為相反面的第2表面，該突起部從該板狀部的該第1表面突起；對該板狀部的該第2表面進行蝕刻，以除去該板狀部的該第2表面上形成的至少一部分該加工變質層的工序；在該突起部的頂端面留有該加工變質層，且在該頂端面的該加工變質層形成第1金屬膜的工序；在該板狀部的該第2表面形成第2金屬膜的工序；及除去該板狀部的該第1表面的未形成該突起部的區域的該加工變質層的工序。
  7. 根據申請專利範圍第6項之引線框架的製造方法，其中，在除去該板狀部的該第2表面上形成的至少一部分該加工變質層的工序中，除去形成在該板狀部的該第2表面的全部該加工變質層，在除去該板狀部的該第2表面上形成的至少一部分該加工變質層的工序之後，該製造方法還包括：在該突起部的該頂端面上形成的該加工變質層上形成第1金屬膜的工序；及在該板狀部的該第2表面的未形成該加工變質層的區域形成第2金屬膜的工序。
  8. 根據申請專利範圍第6項之引線框架的製造方法，其中，在除去該板狀部的該第2表面上形成的至少一部分該加工變質層的工序之前，該製造方法還包括： 在該突起部的該頂端面上形成的該加工變質層上形成第1金屬膜的工序；及在該板狀部的該第2表面上形成的該加工變質層上形成第2金屬膜的工序，在除去該板狀部的該第2表面上形成的至少一部分該加工變質層的工序中，除去該板狀部的該第2表面的未形成該第2金屬膜的區域的該加工變質層。
  9. 根據申請專利範圍第7項之引線框架的製造方法，其中，該第2金屬膜形成在該板狀部的該第2表面的、俯視時與該第1金屬膜重疊的區域。
  10. 根據申請專利範圍第8項之引線框架的製造方法，其中，該第2金屬膜形成在該板狀部的該第2表面的、俯視時與該第1金屬膜重疊的區域。
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