TWI803510B - 用於銅互連件之晶種層 - Google Patents

用於銅互連件之晶種層 Download PDF

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Publication number
TWI803510B
TWI803510B TW107129279A TW107129279A TWI803510B TW I803510 B TWI803510 B TW I803510B TW 107129279 A TW107129279 A TW 107129279A TW 107129279 A TW107129279 A TW 107129279A TW I803510 B TWI803510 B TW I803510B
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Taiwan
Prior art keywords
layer
copper
ruthenium
substrate
processing chamber
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TW107129279A
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English (en)
Chinese (zh)
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TW201920735A (zh
Inventor
吳智遠
萌區 蕭
美荷Ｂ 那克
本立 許
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
TW107129279A 2017-08-22 2018-08-22 用於銅互連件之晶種層 TWI803510B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762548604P 2017-08-22 2017-08-22
US62/548,604 2017-08-22

Publications (2)

Publication Number Publication Date
TW201920735A TW201920735A (zh) 2019-06-01
TWI803510B true TWI803510B (zh) 2023-06-01

Family

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Family Applications (1)

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TW107129279A TWI803510B (zh) 2017-08-22 2018-08-22 用於銅互連件之晶種層

Country Status (6)

Country Link
US (1) US10847463B2 (https=)
EP (1) EP3447793B1 (https=)
JP (2) JP7634930B2 (https=)
KR (1) KR20190021184A (https=)
CN (1) CN109461698B (https=)
TW (1) TWI803510B (https=)

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US11177162B2 (en) * 2019-09-17 2021-11-16 International Business Machines Corporation Trapezoidal interconnect at tight BEOL pitch
CN114664656A (zh) * 2020-05-22 2022-06-24 北京屹唐半导体科技股份有限公司 使用臭氧气体和氢自由基的工件加工
US11410881B2 (en) 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride
US11764157B2 (en) * 2020-07-23 2023-09-19 Applied Materials, Inc. Ruthenium liner and cap for back-end-of-line applications
WO2025005521A1 (ko) * 2023-06-30 2025-01-02 주성엔지니어링(주) 전극 형성 방법

Citations (5)

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US20060199372A1 (en) * 2005-03-01 2006-09-07 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20100200991A1 (en) * 2007-03-15 2010-08-12 Rohan Akolkar Dopant Enhanced Interconnect
US20130292806A1 (en) * 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20150262938A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier Structure for Copper Interconnect

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US20060199372A1 (en) * 2005-03-01 2006-09-07 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20100200991A1 (en) * 2007-03-15 2010-08-12 Rohan Akolkar Dopant Enhanced Interconnect
US20130292806A1 (en) * 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20150262938A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier Structure for Copper Interconnect

Also Published As

Publication number Publication date
JP7634930B2 (ja) 2025-02-25
JP2023182638A (ja) 2023-12-26
JP2019062190A (ja) 2019-04-18
EP3447793A1 (en) 2019-02-27
TW201920735A (zh) 2019-06-01
EP3447793B1 (en) 2021-01-06
US10847463B2 (en) 2020-11-24
KR20190021184A (ko) 2019-03-05
US20190067201A1 (en) 2019-02-28
CN109461698A (zh) 2019-03-12
CN109461698B (zh) 2024-04-12

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