JP7634930B2 - 銅配線のためのシード層 - Google Patents

銅配線のためのシード層 Download PDF

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Publication number
JP7634930B2
JP7634930B2 JP2018154364A JP2018154364A JP7634930B2 JP 7634930 B2 JP7634930 B2 JP 7634930B2 JP 2018154364 A JP2018154364 A JP 2018154364A JP 2018154364 A JP2018154364 A JP 2018154364A JP 7634930 B2 JP7634930 B2 JP 7634930B2
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layer
copper
ruthenium
processing chamber
forming
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Japanese (ja)
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JP2019062190A5 (https=
JP2019062190A (ja
Inventor
チーユアン ウー，
モン チュー ツェン，
メフル ビー． ナイク，
ペンリー シュー，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
JP2018154364A 2017-08-22 2018-08-21 銅配線のためのシード層 Active JP7634930B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023159999A JP2023182638A (ja) 2017-08-22 2023-09-25 銅配線のためのシード層

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762548604P 2017-08-22 2017-08-22
US62/548,604 2017-08-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023159999A Division JP2023182638A (ja) 2017-08-22 2023-09-25 銅配線のためのシード層

Publications (3)

Publication Number Publication Date
JP2019062190A JP2019062190A (ja) 2019-04-18
JP2019062190A5 JP2019062190A5 (https=) 2021-09-30
JP7634930B2 true JP7634930B2 (ja) 2025-02-25

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JP2018154364A Active JP7634930B2 (ja) 2017-08-22 2018-08-21 銅配線のためのシード層
JP2023159999A Pending JP2023182638A (ja) 2017-08-22 2023-09-25 銅配線のためのシード層

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Country Status (6)

Country Link
US (1) US10847463B2 (https=)
EP (1) EP3447793B1 (https=)
JP (2) JP7634930B2 (https=)
KR (1) KR20190021184A (https=)
CN (1) CN109461698B (https=)
TW (1) TWI803510B (https=)

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US11177162B2 (en) * 2019-09-17 2021-11-16 International Business Machines Corporation Trapezoidal interconnect at tight BEOL pitch
CN114664656A (zh) * 2020-05-22 2022-06-24 北京屹唐半导体科技股份有限公司 使用臭氧气体和氢自由基的工件加工
US11410881B2 (en) 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride
US11764157B2 (en) * 2020-07-23 2023-09-19 Applied Materials, Inc. Ruthenium liner and cap for back-end-of-line applications
WO2025005521A1 (ko) * 2023-06-30 2025-01-02 주성엔지니어링(주) 전극 형성 방법

Citations (6)

* Cited by examiner, † Cited by third party
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JP2008514812A (ja) 2004-09-28 2008-05-08 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜形成のための前駆体およびルテニウム含有膜を形成するための方法
JP2010215982A (ja) 2009-03-18 2010-09-30 Tosoh Corp ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜
US20130292806A1 (en) 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20140327141A1 (en) 2012-04-13 2014-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Copper interconnect structure and method for forming the same
JP2015218117A (ja) 2014-05-14 2015-12-07 株式会社Adeka 銅化合物、薄膜形成用原料及び薄膜の製造方法
WO2016144433A1 (en) 2015-03-11 2016-09-15 Applied Materials, Inc. Method and apparatus for protecting metal interconnect from halogen based precursors

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US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
JP2008098449A (ja) * 2006-10-12 2008-04-24 Ebara Corp 基板処理装置及び基板処理方法
US20080164613A1 (en) 2007-01-10 2008-07-10 International Business Machines Corporation ULTRA-THIN Cu ALLOY SEED FOR INTERCONNECT APPLICATION
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008514812A (ja) 2004-09-28 2008-05-08 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜形成のための前駆体およびルテニウム含有膜を形成するための方法
JP2010215982A (ja) 2009-03-18 2010-09-30 Tosoh Corp ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜
US20130292806A1 (en) 2012-04-13 2013-11-07 Paul F. Ma Methods For Manganese Nitride Integration
US20140327141A1 (en) 2012-04-13 2014-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Copper interconnect structure and method for forming the same
JP2015218117A (ja) 2014-05-14 2015-12-07 株式会社Adeka 銅化合物、薄膜形成用原料及び薄膜の製造方法
WO2016144433A1 (en) 2015-03-11 2016-09-15 Applied Materials, Inc. Method and apparatus for protecting metal interconnect from halogen based precursors

Also Published As

Publication number Publication date
JP2023182638A (ja) 2023-12-26
JP2019062190A (ja) 2019-04-18
EP3447793A1 (en) 2019-02-27
TW201920735A (zh) 2019-06-01
EP3447793B1 (en) 2021-01-06
US10847463B2 (en) 2020-11-24
KR20190021184A (ko) 2019-03-05
TWI803510B (zh) 2023-06-01
US20190067201A1 (en) 2019-02-28
CN109461698A (zh) 2019-03-12
CN109461698B (zh) 2024-04-12

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